Atsushi Murakoshi's research while affiliated with Tesco and other places

... Major requirements of anneal processing are high temperature and very short time [62]. During the last decade two new sub-millisecond annealing technologies have been available to semiconductor industry that provide both the high temperatures ranging from 1,200 to 1,350°C, and the short times ranging from seconds to milliseconds required by devices with gate length under 50 nm: laser spike anneal (LSA) [63] and flash lamp anneal (FLA) [64]. ...

... Diode leakage studies for As and B implanted junctions showed consistently lower leakage current for cryo-implants (Fig. 2.28) compared to room temperature process [Suguro01]. The effects increased with ion dose used to form the diodes and were substantially larger for As implants at high doping levels. ...

... In view of the shrinkage of semiconductor electronic devices, accurate control of the distribution of dopant atoms in semiconductors and the variation of their electrical properties have become increasingly important. [1][2][3][4][5][6][7][8] Ion implantation has been commonly used in device manufacture for several decades due to precisely control of dopant distribution by choosing appropriate implantation doses and energies. Rapid thermal annealing (RTA) can restore the damages caused by ion implantation while substantially suppressing the diffusion of dopant atoms. ...

... However, a basic elemental analysis of irradiated fibers was not performed, and the boron concentration estimated using the elemental analysis of the irradiated composite remains lower (two times lower) in the reference state (~ 1400 ppm). To confirm the GDMS results, NRA (Nuclear Reaction Analysis) analyses, using the 11 B(p,α) 8 Be nuclear reaction described in the literature[74], were therefore performed to verify the boron content in the TSA3 fibers. The results revealed a concentration of 2400 ± 400 ppm. ...

... Thus, the charge carriers can easily "tunnel" through the narrow SBW into the channel resulting in Ohmic contacts. Conceptually, this approach is similar to that used in conventional Si CMOS technology where the S/D regions are degenerately doped by donor (e.g., P and As) or acceptor (e.g., B) species to facilitate carrier tunneling and low R C for n-and p-type contacts, respectively, at the metal-semiconductor contact interface [206][207][208]. ...

... Among various means proposed for thermal stabilization (such as interlayer formation with Ir and Co or Pt/Ni alloying, for which, however, procedural complications, process stability, and Pt removability are great concerns), 9,10) one of the most practical and convenient options is pre-SALICIDE ion implantation (PSII) prior to silicidation (e.g., with N, Ge, As, or BF 2 ). [11][12][13][14] In fact, regarding NiSi on Si(100), drastic leakage suppression by F implantation has recently been demonstrated. 15) Nevertheless, with respect to reduction of thermally induced leakage of NiSi on Si(110), a sensitive examination of PSII's efficiency for leakage suppression and a comparative investigation of the influence of crystal orientation have never been conducted. ...

... Therefore, the development of an ellipsoidfitting method for soil particles with complex shapes, such as simple ellipsoids, will be useful for numerical calculations using ellipsoidal particles. In previous studies, the particle length and the direction of soil particles have been evaluated on CT images by direct measurement methods, such as using calipers [27,28], or principal component analysis [17,18,29]. However, these methods have not been evaluated based on the strict definition of the ellipsoid. ...

... Another type of the standard material has a multilayer structure that has delta-doped layers considerably thinner than the other layers [7,[11][12][13][14][15][16][17][18]. The advantage of this structure is that an almost constant sputtering rate can be obtained during the sputtering of the multilayer, and the delta layer can be a depth scale, if the distance between the delta-layers is measured accurately. ...

... Nanoparticle synthesis resulting from the phase separation of impurity atoms from the host medium is a very promising technique. [1][2][3] Such coalescence occurs under high-dose implantation for certain ions, if the concentration of implanted atoms exceeds 1 or 2 at. %. 1) For example, B 12 clusters were observed experimentally in the case of B ion implantation into Si at room temperature. ...

... This depth calibration can avoid the problem of the change of sputtering rate in the transient region. 17 Aligned HR-RBS measurements of the ion-bombarded Si (001) substrate (sample C) were performed using an HRBS500 instrument (Kobe Steel, Ltd.) to evaluate the 20 ...