This paper presents experimental results of the onset of SiO2 growth at high temperatures ranging from 800 to 1000°C, and reviews observations made on the intitial stages of silicon oxidation at low temperatures ranging from 300 to 700°C, and native-oxide growth at room temperature. An incubation period of duration TD, during which the oxide does not grow at the onset of oxidation at all
... [Show full abstract] temperatures, is observed. The dependence of the delay TD on substrate orientation, doping, and oxidation temperature is summarized. A model exploring the influence of SiO formation at the onset of the thermal oxidation of silicon at high temperatures in dry oxygen on the passive-to-active oxidation transition is presented.