Daniel F. O'Kane's research while affiliated with University of Michigan and other places

What is this page?


This page lists the scientific contributions of an author, who either does not have a ResearchGate profile, or has not yet added these contributions to their profile.

It was automatically created by ResearchGate to create a record of this author's body of work. We create such pages to advance our goal of creating and maintaining the most comprehensive scientific repository possible. In doing so, we process publicly available (personal) data relating to the author as a member of the scientific community.

If you're a ResearchGate member, you can follow this page to keep up with this author's work.

If you are this author, and you don't want us to display this page anymore, please let us know.

Publications (3)


Semiconducting Properties of AgIn[sub 3]Te[sub 5]
  • Article

January 1964

·

1 Read

·

10 Citations

Journal of The Electrochemical SocietyJournal of The Electrochemical Society
Daniel F. O'Kane

·

Donald R. Mason
Share

Semiconducting Properties of Peritectic Compounds from the Pseudo-binary System of CdTe-In[sub 2]Te[sub 3]

November 1963

·

5 Reads

·

15 Citations

Single phase polycrystalline samples of three peritectic compounds from the pseudo-binary system of CdTe and In2Te3 were prepared by zone refining and zone leveling techniques. The compounds are 45 mole % CdTe-55 mole % In2Te3 (CdIn2Te4, β-phase), 20 mole % CdTe-80 mole % In2Te3 (CdIn8Te13, γ-phase), and 6 mole % CdTe-94 mole % In2Te3 (CdIn30Te46, δ-phase). The energy gap values obtained from electrical conductivity and Hall effect measurements show that Eg = 1.38 ev for the β-phase; Eg = 1.02 ev for the γ-phase; and Eg = 1.17 ev for the δ-phase. The addition of CdTe to In2Te3 or of In2Te3 to CdTe lowers the energy gaps of the resulting compounds.


The Thermoelectric Properties of Mixed Crystals of Mg2Ge x Si1 − x

February 1963

·

28 Reads

·

165 Citations

The purpose of this work was to determine the thermoelectric properties of the pseudobinary system . The compositions investigated were , , , , , and . X‐ray diffraction lattice parameter measurements and differential thermal analysis measurements established the existence of complete solid solubility between and . Both the lattice parameter and liquidus temperature show almost linear variation with composition in this system. The melting temperature of was found to be , while that of was found to be .

Citations (2)


... To obtain homogeneous and pure Ag 2 Se compounds, the melting temperature needs to exceed 1170 K (the melting point of Ag 2 Se). [172][173][174] Fig. 2(b) is the phase diagram of Ag 2 Se with a near-stoichiometric ratio, 175 in which Ag 2 Se shows the firstorder phase transition from a to b phase at B403 to B406 K. 172 Moreover, a slight deviation of the stoichiometric ratio can induce Ag-rich Ag 2 Se and Se-rich Ag 2 Se, 175 leading to a discrepancy in the electrical transport performance. ...

Reference:

Advances in Ag2Se-based thermoelectrics from materials to applications
Semiconducting Properties of AgIn[sub 3]Te[sub 5]
  • Citing Article
  • January 1964

... Mg 2 Si is one of the candidates for next-generation thermoelectric materials because it consists of less toxic and inexpensive constituent elements existing abundantly in the Earth's crust, and a great thermoelectric performance in the temperature range of 300-600 • C [19][20][21][22][23][24]. However, the figure of merit ZT of Mg 2 Si is significantly reduced owing to its high thermal conductivity in the low-temperature range, and environmentally friendly Mg 2 Si thermoelectric materials have been actively studied. ...

The Thermoelectric Properties of Mixed Crystals of Mg2Ge x Si1 − x
  • Citing Article
  • February 1963