Masahiro KobayashiCanon Inc. · Device Technology Development Headquarters
Masahiro Kobayashi
Doctor of Engineering
About
7
Publications
883
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
113
Citations
Introduction
Publications
Publications (7)
In this paper, we describe a newly developed 3.4 μ m pixel pitch global shutter CMOS image sensor (CIS) with dual in-pixel charge domain memories (CDMEMs) has about 5.3 M effective pixels and achieves 19 ke ⁻ full well capacity, 30 ke ⁻ /lx•s sensitivity, 2.8 temporal noise, and -83 dB parasitic light sensitivity. In particular, we describe the sen...
In this paper, we describe an overview of autofocus (AF) technology for digital still cameras, video camcorders, and smartphones. Subsequently, we propose a CMOS image sensor (CIS) with all-pixel image plane phase-difference detection AF (PDAF) and describe a device structure and an optical design for fast and high-quality AF and low-noise imaging....
CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS...
A 1.8e
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub>
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup>
temporal noise over 110 dB dynamic range 3.4 μm pixel pitch global shutter (GS) CMOS image sensor (C'S) single-slope analog digital con...
A low noise and high dynamic range global shutter (GS) CMOS image sensor (CIS) with multiple accumulation shutter technology is described. The pixel having a 6.4μm pitch, achieved 1.8e − temporal noise and full well capacity of 70,000e − with charge domain memory, corresponding to 92dB dynamic range in 30fps operation. In the signal readout procedu...
In this paper, we describe a device structure and optical design for a CMOS image sensor with phase-difference detection photodiodes (PD) for autofocus (AF) function. The individual pixel of this image sensor is composed of two horizontally displaced PDs separated by a PN junction. All the effective pixels function as both the imaging and the phase...
