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Schematic diagram of the radio frequency micro-electro-mechanical systems (RF-MEMS) switch using laterally movable triple electrodes actuator: (a) overview; (b) cross-sectional view along A-A'; and (c) equivalent circuit.
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A novel actuator toward a low voltage actuation and fast response in RF-MEMS (radio frequency micro-electro-mechanical systems) switches is reported in this paper. The switch is comprised of laterally movable triple electrodes, which are bistable by electrostatic forces applied for not only the on-state, but also the off-state. The bistable triple...
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Citations
... To address this, researchers have proposed various approaches. In [20], a design and testing methodology for a laterally movable electrostatic actuator, specifically aimed at RF MEMS switches, was proposed. This actuator was developed to operate efficiently at a low voltage level. ...
MEMS electrostatic actuators can suffer from a high control voltage and a limited displacement range, which are made more prevalent by the pull-in effect. This study explores a tri-electrode topology to enable a reduction in the control voltage and explores the effect of various solid materials forming the space between the two underlying stationary electrodes. Employing solid dielectric material simplifies fabrication and can reduce the bottom primary electrode’s fixed voltage. Through numerical analysis, different materials were examined to assess their impact. The results indicate that the primary electrode’s fixed voltage can be reduced with an increase in the dielectric constant, however, with the consequence of reduced benefit to control voltage reduction. Additionally, charge analysis was conducted to compare the actuator’s performance using air as the gap-spacing material versus solid materials, from the perspective of energy conservation. It was found that solid materials result in a higher accumulated charge, reducing the need for a high fixed voltage.
... Hidden Layer Output Layer Fig. 1 Basic ANN architecture potential research challenges in the design of future communication applications [2] ( Fig. 1). Now, the wireless communication application demands study RF MEMS switches, with performance optimization. ...
This paper presents optimization of cantilever-based radio frequency (RF) micro-electro-mechanical system (MEMS) technology switches using artificial neural network (ANN)-based prediction algorithms, i.e., linear vector quantization network. We have created a literature survey-based train dataset and finite element method (FEM) simulation-based test datasets for cantilever structure-based RF MEMS switches. The dataset training is done with different algorithms, i.e., Bayesian regularization and extracted performance indices.KeywordsRF MEMSANNDatasetsTraining algorithms
... The radio frequency (RF) signal goes from the input port to the output port. The center and right electrodes come into contact, and the RF signal goes to the ground in the off state [113]. Part (c) of the figure shows an equivalent circuit. ...
... RF-MEMS switch with side movable triple electrodes actuator. (a) Overview; (b) crosssectional view between A to A'; (c) an equivalent circuit[113]. ...
The implementation of electrostatic microactuators is one of the most popular technical solutions in the field of micropositioning due to their versatility and variety of possible operation modes and methods. Nevertheless, such uncertainty in existing possibilities creates the problem of choosing suitable methods. This paper provides an effort to classify electrostatic actuators and create a system in the variety of existing devices. Here is overviewed and classified a wide spectrum of electrostatic actuators developed in the last 5 years, including modeling of different designs, and their application in various devices. The paper provides examples of possible implementations, conclusions, and an extensive list of references.
... The MSS isolation was 30 dB at 20 GHz. Naito et al. [13] utilized surface micromachining to make a MSS with an actuator, and the actuator was composed of triple movable electrodes. The triple movable electrodes that actuated by electrostatic force controlled the MSS in "on" state or "off" state. ...
... A MSS in this study was made using the CMOS-MEMS technology. The MSS fabricated by this technology is simpler than these MSSs [7][8][9][10][11][12][13][14][15] fabricated by surface micromachining. The isolation of the MSS is higher than that of Lin et al. [16] and Yang et al. [17], and the AV of the MSS is lower than that of Lin et al. [16] and Yang et al. [17]. ...
... The etching time for the post-process was 27 min. The post-process was without any mask and was compatible with the CMOS process, so that the fabrication for the MSS was simpler than that of these sensors [7][8][9][10][11][12][13][14][15] made by surface micromachining. The electrical properties for the MSS were simulated by the Agilent ADS tool. ...
A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs. The membrane locates over the CPW lines. The surface of signal line for the CPW has a silicon dioxide dielectric layer. The fabrication of the MSS contains a CMOS process and a post-process. The MSS has a sacrificial oxide layer after the CMOS process. In the post-processing, a wet etching of buffer oxide etch (BOE) etchant is employed to etch the sacrificial oxide layer, so that the membrane is released. Actuation voltage for the MSS is simulated using the CoventorWare software. The springs have a low stiffness, so that the actuation voltage reduces. The measured results reveal that actuation voltage for the MSS is 10 V. Insertion loss for the MSS is 0.9 dB at 41 GHz and isolation for the MSS is 30 dB at 41 GHz.
... The optimization of electrostatic MEMS switches is mainly achieved by reducing its actuation voltage [110]. Current methods include shape optimization of comb fingers [111], reduction of the driven gap [112] and reduction of the spring constant [102]. Park et al. [113] proposed a laterally capacitive shunt MEMS switch fabricated on an SOI (silicon-on-insulator) wafer. ...
... In recent years, it has been found that dynamic snap-back can be used to release a latched beam with a single electrode [120], The optimization of electrostatic MEMS switches is mainly achieved by reducing its actuation voltage [110]. Current methods include shape optimization of comb fingers [111], reduction of the driven gap [112] and reduction of the spring constant [102]. Park et al. [113] proposed a laterally capacitive shunt MEMS switch fabricated on an SOI (silicon-on-insulator) wafer. ...
MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.
This communication discusses the role of nonlinear algorithms in training the neural network, which predicts the optimized RF MEMS switch dimensions. A dedicated dataset, i.e., DrTLN-RF-MEMS-SWITCH-DATASET-v1, was created by considering the most appropriate input and output variable suitable to predict the cantilever dimensions, crab leg and serpentine structure-based RF MEMS switches. The distinct artificial neural networks (ANN) performance is analysed using various training methods. The hardware implementation possible neural network algorithms, i.e., Fitting and Cascade Feed Forward Network, are considered for learning and prediction. The ANN algorithm's performance in predicting and optimizing RF MEMS switch is analysed using nonlinear training methods like Levenberg–Marquardt (LM) and Scaled Conjugate Gradient (SCG). The cascaded forward network with LM training combination offers the best performance compared with other varieties. A comprehensive study is performed using neural networks and finite element simulation results. The study revealed that the error percentage is below 15.08% for most of the parameters.
A continuously reconfigurable metasurface reflector based on unit cell mushroom geometry that was integrated with a varactor diode is presented in this paper. The unit cell of the metasurface was designed and optimized to operate in the X-band and Ku-band, improving satellite communication’s quality of service. The losses mechanisms of continuous control over the unit cell phase reflection in beam steering resolution are considered and the analysis results are presented. The unit cell design parameters were analyzed with an emphasis on losses and dynamic reflection phase range. The unit cell magnitude and phase reflection are shown in the wide frequency bandwidth and showed a good agreement between all the measurements and the simulations. This metasurface enabled a high dynamic range in the unit cell resonant frequency range from 7.8 to 15 GHz. In addition, the reflection phase and absorption calibration are demonstrated for multiple operating frequencies, namely, 11 GHz, 12 GHz, and 13.5 GHz. Furthermore, design trade-offs and manufacturing limitations were considered. Finally, a beam-steering simulation using the designed metasurface is shown and discussed.
A vertical RF-MEMS (Radio Frequency Micro ElectroMechanical Switch) switch design is proposed in this work that features a shunt capacitive configuration and can operate at a very low actuation voltage. Besides operating on a low switching voltage, the switch behold a small value of insertion loss in Up (ON) state and offers a towering isolation factor in Down (OFF) state. A horizontal structure of bridge membrane is used in the proposed design and the switch function (with ON and OFF operating states) is provided by the vertical movement of this membrane structure that is controlled by the electrostatic actuation technique. The actuation pad is centrally fed by a Coplanar Waveguide structure. The switch performance has been analysed over a wide frequency range from 1 to 40 GHz. For obtaining a 1.5 μm vertical displacement of the bridge membrane, a sheer 3.0 Volts of pull-in voltage (VPI) is required. CoventorWare and HFSSv13 tools are used in this work for designing and analysing the proposed switch. The use of fixed-fixed flexure beam configuration is chosen for switch design. Simulation results showcase excellent RF characteristics with isolation factor of −47 dB (at 32.5 GHz) and insertion loss in range of −0.01 to −1.10 dB (for 1−40 GHz frequency).
