Figure 6 - uploaded by Rahis Kumar Yadav
Content may be subject to copyright.
S-parameters (S11, S12, S21 and S22) plot on smith chart, simulated (dashed blue lines) measured (solid red lines) at bias Vds=24V and Vgs= -1V, frequency fstart=1GHz and fstop=200 GHz (b) Gains versus frequency plot for Vds=24V and Vgs= -1V.
Source publication
This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to...
Contexts in source publication
Context 1
... device stability analysis has been done with the help of Smith plots. Figure 6(a) shows model and measured s-parameters [29]. Smith plots analysis reveals that proposed device capacitance increases with frequency. ...
Context 2
... also depicts that with rise in frequency, both the transmission coefficients (S21) and (S12) move towards clockwise direction in the circle of inductances assuring good performance of device at microwave frequency range. The device simulation and measured gains [19], [30] are plotted as a function of frequency at a gate bias of V gs =-1V in Figure 6(b). On comparison the results and found to be within close conformity thus validating device performance in microwave frequency range. ...
Similar publications
This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to...
Low-cost flexible microwave circuits with compact size and light weight are highly desirable for flexible wireless communication and other miniaturized microwave systems. However, the prevalent studies on flexible microwave electronics have only focused on individual flexible microwave elements such as transistors, inductors, capacitors, and transm...
This article proposes noise parameter extraction and simulation for enhanced field plated Dual Material Gate AlGaN/GaN MODFET first time in order to characterize the device for its noise performance in the microwave range of frequencies. Noise equivalent circuit model based on small signal model of the proposed device structure is developed for par...
Citations
... It is therefore possible to calibrate the HEMT model using simplified device geometry, so care should be taken to find initial values as close as possible to the optimal calibration point. From the score the optimizer generates a new set of model parameters which are then used for the next simulation run [21]. ...
We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.
The effects of the parasitic gate capacitance and gate resistance ( R g ) on the radiofrequency (RF) performance are investigated in L G = 0.15 μm GaN high‐electron‐mobility transistors with T‐gate head size ranging from 0.83 to 1.08 μm. When the device characteristics are compared, the difference in DC characteristics is negligible. The RF performance in terms of the current‐gain cut‐off frequency ( f T ) and maximum oscillation frequency ( f max ) substantially depend on the T‐gate head size. For clarifying the T‐gate head size dependence, small‐signal modeling is conducted to extract the parasitic gate capacitance and R g . When the T‐gate head size is reduced from 1.08 to 0.83 μm, R g increases by 82%, while f T and f max improve by 27% and 26%, respectively, because the parasitic gate–source and gate–drain capacitances reduce by 19% and 43%, respectively. Therefore, minimizing the parasitic gate capacitance is more effective that reducing R g in our transistor design and fabrication, leading to improved RF performance when reducing the T‐gate head size.
We have developed an analytical model of channel potential and threshold voltage of a gate‐engineered heterostructure transistor, triple material gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistor (HEMT). Two steps in channel potential profile lead to suppression of short channel effects. For accurate modeling of the device, spontaneous and piezoelectric polarization‐induced charges at the AlGaN/GaN interface and temperature and mole fraction dependence of device parameters are considered. The impact of trapped charges formed because of process defects during device growth is also analyzed. The device performance is studied with the variation in device parameters, and superior performance of triple material gate HEMT over other HEMT structures is observed in terms of reduced short channel effects and enhanced carrier velocity. Results from the proposed analytical model are validated against the data obtained from a commercially available numerical device simulator.
