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Optical microscope pictures of 2D photonic crystals that was fabricated by using reflow method. Blue arrow point to SiN micro-domes.
Source publication
In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes (LEDs) was studied. First, sapphire side of the top emitting LEDs, which is the bottom surface of the LEDs, is coated with silver (Ag). Light emitted towards the s...
Citations
... Among mentioned methods, RFMS and MOCVD growth methods are probably the only methods which are currently and effectively used in industry. Especially, MOCVD holds its 7 position on all of the epitaxial growth of LEDs and laser diodes in all colors (blue, green, red) [14][15][16] and high power infrared laser diode industry [17]. On the other hand, RFMS growth methods is also leading many important coating industries. ...
Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS2 , WS2 , MoSe2 and WSe2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.
Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.
