Cross‐sectional view of (a) Conventional TFET, (b) proposed device TFET I, (c) proposed device TFET II; TFET, tunnel field‐effect transistor. TFET, Tunnel field‐effect transistor

Cross‐sectional view of (a) Conventional TFET, (b) proposed device TFET I, (c) proposed device TFET II; TFET, tunnel field‐effect transistor. TFET, Tunnel field‐effect transistor

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Article
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In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double gate TFET and dual metal TFET device. An analytical model is formulated to study the performance of...

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We report on four-input NAND and NOR gates using only two 7nm Schottky-Barrier (SB) independent-gate FinFETs transistors that take advantage of gate workfunction engineering (WFE). Careful optimization of workfunctions at the source/drain contacts as well as two independent gates of the SB-FinFETs provide unprecedented control of the threshold in...

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Article
This research article unveils a novel approach to boost the sensing ability of a biosensor by incorporating a pocket of indium gallium arsenide (InGaAs) at the source-channel junction of a tunnel field-effect transistor (TFET). The InGaAs pocket acts as a source of electrons, improving the sensitivity of the biosensor. In addition to the above, this research article also presents a comparative assessment of the proposed charge plasma-based doping less heterostructure (InGaAs pocket) TFET-based biosensor (CPDLHTFET) with a proposed (CPDLTFET) through simulations. The comparison is made based on their respective sensitivity and steric hindrance performances. Additionally, the effects of varying the pocket length and cavity length on the performance of both devices are studied and compared. The outcomes demonstrate that optimizing the InGaAs pocket and cavity length can improve sensitivity. The study also addresses the steric hindrance issue (restriction caused by the already hybridized biomolecules) and the impact on sensitivity due to probe position. The study highlights the potential of TFET-based biosensors for various biotechnology and medical diagnosis applications. Overall, this research presents a promising InGaAs pocket TFET-based design for improved performance.