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Thin Film Fabrication - Science topic
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Questions related to Thin Film Fabrication
In some cases of MoS2 thin film fabrication, the methods usually used are CVD, spin coating and dip coating. In the three methods mentioned, usually the deposited film is heated at high temperatures above 800C. Because the substrate used is Silicon, it will be fine.
What if the substrate we use is not silicon, for example BK7 glass? Some papers transfer MoS2 from a silicon substrate to the desired substrate, but I'm not sure the MoS2 layer will bond tightly with the substrate I use.
I'm looking for a rubber-like material with low permeation to water vapor. Rubber itself doesn't work for my application because it is very permeable to water vapor. Thanks.
I am looking for a substrate layer(/adhesive inhibitor) to which a sputtered deposited thin gold layer will have the lowers possible adhesion. General knowledge is that oxides (e.g. SiO2, Al2O3, TiO2) show bad adhesion. Thus I was wondering which one is the worst (best for me).
Also, the material should withstand 400°C and should be deposited as a thin (<10nm) conformal layer (e.g. ALD).
Hello, I will try to produce Sb2S3 films with thermal evaporation technique using Sb2S3 pellets or Sb pieces. Then I will complete the production with thermal annealing. Could you please give information about the risks of Sb2S3 pellets or Sb pieces and the precautions I should take?
m-Phenylenediamine [1,3-diaminobenzene] solution I make for reverse osmosis membrane synthesis keeps changing colour, I suspect that some sort of reaction is happening that could affect the quality of the membranes. Is there something like an additive that can be done to mitigate this?
I aim to deposit Sno2 thin film on ITO substrate using spray pyrolysis. What are the vital points I should take into consideration?
The possibility of semiconducting BaSi2 films for potential application in thin-film solar cells has already been explored by several research groups. Literature review reveals that to grow thin-films of BaSi2, techniques including molecular beam epitaxy (MBE), vacuum evaporation, solid phase epitaxy (SPE), RF magnetron sputtering, etc., have been reported by this time.
Is it possible to fabricate a BaSi2 film on the SLG substrate using chemical deposition process, in particular, using the sol-gel spin-coating method?
Thanks in advance.
Hello,
I am making a graphene oxide/polymer composite membrane using spin-coating. When the precursor solution is made (blending and sonication of polymer with graphene oxide, followed by centrifugation), I get a clear solution that is stable for over a week. However, when spin-coated, the graphene oxide agglomerates, and I end up with poor membrane performance. I tried different spin coating techniques, precursor solution ratios, and many other ways but I seem to face the same problem. Any idea what is causing this?
I gave several attempts to deposit MAPbl3 film over FTO substrate. Every time I got light yellow non uniform film. Was that because of the fact I didn't deposited electron transport layer before it or it is due to precursor solution???
I am working on CZTS thin film solar cell fabrication.I am confused why the CZTS solar cell synthesized from hydrazine could get a PCE more than 11%. However, up to now, based on other solutions, such as oleylamine, the performance is lower than 10%.
Dear all:
I am looking for the data of the Vapor Pressure for these substances :
- Bismuth
- Tellurium
(for both of these elements I found a few data, but for points of temperature above 650 °C)
- And Bi2Te3;
after have searched for the Vapor Pressure of Bi2Te3 in literature, I found any data, as if the Vapor Pressure for Bi2Te3 coudn't be possible to be measured.
Does anyone know why is this ?
Or, Is it that I need to search for longer ?
Even in some data sheets there is a empty space for the Bi2Te3's Vapor Pressure.
Hope someone can help me with this.
Thank You !
Regards, !
I have tried at 25 mTorr Ar, 50-75 watt with commercially bought porous Si target. But I have not got any deposition. I have not found any reason for this failure also.
I'm trying to fabricate a zinc-carbon bipolar battery and I need to make bipolar electrodes with thin film techniques, especially by employing binder (resins) and carbon (graphene, graphite or MWCNT) composites.
Is there any better technique relative to one reported by Kwon and co-workers, The interfacial segregation growth technique using Graphite powder coating on a poly-crystalline Ni layer (deposited on the glass substrate) yields High crystalline quality of single- layer graphene synthesized at low temperatures? Since in this case, the problem lies in the deposition of Ni on the glass and then it's removal after the growth.
Hello everyone, I want to do surface treatment for my sol-gel synthesized BiFeO3. For this purpose if anyone have a kind suggestions regarding methodology that how to do and which way is better and convenient then please let me know. This treatment could be acid, base, polishing, finishing, smoothing or any other method that could make a positive impact. I wonder that if anyone could share one's knowledge, personal experience or some reference data. Thanking you all in advance.
Post annealing is an important parameter in thin film fabrication, which can help to enhance the physical, optical and electrical properties of the thin film by changing the microstructure and phases. I have read a lot of publication reporting about this, but most of them could not explain clearly the effect of annealing on film thickness. Would you please recommend some books or publications which talks about this process?
Hello, i have a question regarding on surface fabrication technique, since i am not familiar with this work before. I am going to try to fabricate a thin boron nitride (BN) film on the bare glass by using spin coating methods. Beforehand, i increase the hydrophilicity of glass surface through oxygen plasma treatment. Is there anyone who could share the way to achieve a homogeneous BN film on the glass? Thank you.
Please specify both organic and Inorganic materials for ETL and HTL.
Hi, I'm working on a microwave PECVD coater, that we refurbished. It has an Astex MW source. Should I turn "off" the magnetron filament after each coated article , or just leave it "on" ready for the next coating article? What is best to extend the life of the filament?
Thanks.
The value of current increases rapidly at the starting voltages due to which the value of fill factor and efficiency is very low. The only common layer between Dye and Perovskite Solar Cell is compact titania layer (in my case). Is this behavior due to the above said layer?
Trying PECVD Plasma polymerization with a shower-head reactor
Hello everyone, I want to grow thin film on FTO using hydrothermal but the medium is highly basic so FTO looses even its own stability and tore down into small pieces. Now my question ' is there any most stable substrate that could even stable in highly basic conditions? because my sample with specific morphology could be obtained hydrothermally in highly basic medium like 16M KOH solution. If anyone could give some suggestions will be highly appreciated. Thank you
I need to wafer-bond a Carbon thin-film to a metal-coated wafer (which I can also coat with Carbon to aid in the bonding). How can I bond Carbon to Carbon?
The melting point of Carbon is so high that I suspect direct wafer-bonding (pressure/temperature) will not work, or would require extremely high temperatures (the metal probably can't go above ~700°C).
I'm thinking there must be some organic process for bonding carbon to other carbons, but looking at the long list of Carbon-Carbon chemical reactions I have no idea where to start.
Is there some chemical I can apply to one surface that would cause it to bond to the other surface? Plasma treatments do appear to make the surface hydrophilic somewhat, so direct wafer bonding might work - any suggestions on bonding temperatures would be appreciated.
Thanks!
-- Demis
I have a A-cut single crystal sapphire which I want to etch. Based on literature, I tried using KoH (W/o heat and with heat). But both of these did not work. Does anybody have experience with this?
Hello
When it comes to thin-film which one is more desirable? (Particularly, where the thin film is used as the first layer of a multi-layer thin films fabrication)
1- a film with a higher internal tress and higher Tensile
Strength?
or
2-a film with a lower internal tress and lower Tensile
Strength?
Thank you for your time and help.
Best Regards
Ali
I want to produce PLA blends by using solution casting method. I am using chloroform as a solvent. The steps are conducted in fume chamber. I have precondition the PLA in an oven at 70 deg around 2 hrs to avoid moisture. the sample was left overnight. However, there is something wrong with the film, it have white spot which is not transparent. Can anyone suggest any to avoid this problem? Here I attached the image of 100%PLA . Thank you
I prepared MWCNTs/Ag doped ZnO,but I face a problem of separation of MWCNTs from nanocomposites after sonication .What is a better way to enhance MWCNTs loading?
I'm trying to make a sacrificial layer on a glass substrate. I'll deposit gold on top of it and do lithography on it to write some structures. I have other plans with it afterwards. I'm facing difficulties during removal of the resists I use for lithography.
I used PVA and PMMA so far for the sacrificial layer. For e-beam resist I used ANR7520. PVA can't be used with RIE so I did KI/I2 etching but it reacts with PVA so I dropped the idea. While using PMMA I did Ar plasma etching and O2 for removing gold and 7520 respectively. But it also removes PMMA too. Please help.
I am testing the thermal behavior of a thin polymer film (PVA film prepared by hot water solution. thickness from 0.3 to 0.8mm) from the first heating (25 to 250 degree,10K/min, nitrogen atmosphere) by using the DSC. However, the DSC curve for the 1st heating is very noise. My colleague told me that was probably due to the change of the contact surface between the film and the DSC aluminum pans. During the 1st heating, the thin film huddled and resulting in the jump of DSC curves (I opened the pans after the DSC tests, I found the film became spheral sample). I tried to compress the DSC lips to have less space between the lips and the pans for the film. However, it dose not work. Could you suggest me a better way to test such type materials during the 1st heating using DSC?
Hello, I am working with AFM and I need to deposit different polymers on ultra flat stripped gold chips on silicon wafer. I would like to purchase the ultra flat stripped gold from platypus
I know these chips are meant for one use only, but there is someone aware of a good cleaning procedure I could use to remove the polymer and the possible contaminations and reuse the chip more than once?
Thank you very much for your help.
I make thin films and I use glasses as substrate. A single grid's dimension in my evaporation system is 16mm x 6mm. I work in 10-6 Torr vacuum.
How can I cut my glasses with rectangular geometry?
But you can do this easily by a glass cutter http://www.zh-kv.com/Kaivo_En/ProductView.asp?ID=29&SortID=128
I have been looking for the conductivity of Cu2O and CuO thin film where thickness ranging between 100-200nm and the minimum sheet resistance is something around 7.2Kohm/cm which means electrical resistivity of the film for a 200nm film will be around 1.44x10-3(ohm-cm) which is way too low when compared with other techniques.
Also, I could not find people showing this much low resistive in the past (or maybe I could not find a relevant paper). I wonder If someone could tell me what could be the possible reason for the decrease in the resistivity and also if someone could share some relevant paper with similar low resistivity then that would be great!
Thanks
I have fabricated Ag/p a-Si:H/i a-Si:H/p-c-Si/i a-Si:H/n a-Si:H/ITO/Ag solar cell by PECVD, i a-SI:H layer thickness iis about 5 nm, p,n a-Si:H thickness is about 10nm, ITO (by sputtering)is 80nm and Ag is 100nm (backside, thermal evaporation/sputtering), front Ag contact is Ag paste about 1micron thick. First I have dipped p type c-Si substrate in HF for 1min, then rinsed in Deionised water, sonicated for 30 min in iso propanol, sonicated for 30 min in ethanol and after that sonicated in iso propanol for 30 min and dried with N2 gas. Then loaded in PECVD multi chamber. First I deposited front side i, n a-Si:H layer then sample taken outside(air atmosphere) and flip the sample and deposited back side i, p a-Si:H layer. After that ITO sputtered and Ag thermal evaporation. finally Ag front electrode was made by Ag paste by hand. Series and Shunt resistance are influencing very much on the i-v curve and I'm unable improve the efficiency. What could be the problem? Please help me on how to improve efficiency. I have attached image file of cell I-V curve, please look at it. How to improve FF and Voc? Is my cleaning process sufficient? What are the processing steps for c-Si/a-Si:H based hetero junction solar cells?
The refractive index of ZnO/Glass thin film shows anomalous dispersion in the high frequency region as shown in the attached figure. How to analyze and extract optical parameters out of this region (300 nm - 1100 nm)? I've read that it may be done by applying the Multiple Oscillator Model. If so, then what is that Multiple Oscillator Model and how to apply it?
Thank you all.
We have CuS thin film with (Cu:S) molar ratio (1:1), and we got nanoplates and very distinct and clear particles on the surface. But when increase S concentration (1:2) and (1:3) for (0.1 M, 0.2 M and 0.4 M), the film surface became non-specified aggregated particles (actually there is no particles just aggregations) with porosity. Any explanation for this significant change in surface morphology?
Many thanks in advance for your help and your time
Best regards
Fayroz
Materials I have chosen are Glyceryl monostearate, Pluronics and PEG. Once I do the water titration it solidifies. Could anyone advice where am I going wrong and what needs to be done. Or could someone help me with a simple protocol if they have?
I am trying to treat zinc particles with Trichloro(1H,1H,2H,2H-perfluorooctyl)silane to obtain higher loading within acrylonitrile butadiene styrene for FDM filament fabrication. The size of the zinc particles is -100 mesh. I've read that generally organosilanes are applied to fillers in an alcohol or water solution. Any insight on amount of Trichloro(1H,1H,2H,2H-perfluorooctyl)silane compared to filler weight, and reaction times would be helpful. Additionally, I have 3-(2-Aminoethylamino)propyl dimethoxy-methylsilane that could be used instead. Thank you for your time.
I am preparing ZnO thin film following the recipe reported in this paper: 10.1002/adma.201004301. The precursor solution was filtered using 0.45 micrometer PTFE membrane filter prior to spin coating in ambient at 3000 rpm. The film was annealed at 140 oC for 1 hour in ambient. Inverted solar cells were fabricated using both polymeric and organic small molecule semiconductors (ITO|ZnO|Photoactive layer|MoO3|Au). But, the diode characteristics were not satisfactory. I am suspecting problem with one of the interracial layer. I have queries related to ZnO thin film preparation.
a) Where should the precursor solution be prepared and what should be stirring condition (Heating and stirring speed)?
b) Is filtration required before thin film preparation?
c) Will the pre-treatment of ITO substrate under ozone ambient affect the film quality as well as device characteristics?
I am depositing indium oxide thin film (30 nano meter) and nano wire (200 nano meter) on p-type Si substrate using E-beam evaporator.I want to known whether oxygen vacancies play any major in indium oxide, and how it can alternate the optical, structural and electrical properties of indium oxide.
With PLD we are trying to deposit thin films on STO(100), thin film with some phase is forming at low pressure we tried changing the temperature and laser energy, but still no change, my bulk is of multiple phase, do I have to redo the bulk or annealing or is there any other process which could help me get a single phase film
I have NiAl2O4 Powder with me and I am willing to coat with on glass substrate please help me with the procedure and materials to be used
I have prepared ZnO based thin films by sol gel dip coating method. First sol was prepared by following process. Zinc acetate dihydrate (Zn(COOCH3)2.2H2O) is used as precursor and aluminium nitrate nonahydrate (Al(NO3)3.9H2O) as a dopant source. 2-methoxyethanol (C3H8O2) and monoethanolamine (MEA, C2H7NO) are used as solvent and stabilizer respectively. ZnO sol was prepared first by dissolving Zinc acetate dihydrate in mixture of 2-methoxyethanol and MEA solution. The molar ratio of zinc acetate and MEA was kept 1:1 and concentration of zinc acetate was 0.4 M. For doping of aluminium, aluminium nitrate nonahydrate was added along zinc acetate. The mixture was stirred at 80°C on magnetic stirrer for 3 hours the solutions were allowed to age at room temperature by varying ageing time (24 and 48 hours) before the deposition process. Dip coating method was used to fabricate the films under ambient conditions. And after dipping it in sol glass substrate was heated at 250 degree celcius for 5 minutes and cycles were repeated. Now there is difference in properties in films prepared by sol aged at 24 hours and 48 hours. Now I know this difference in properties is due to ageing and science behind it is hidden in guiding reaction of my sol. please enlighten me if anyone can?
I fabricated SiO2 Microcantilevers of varied dimensions (from 50um to 100um) using wet chemical etching methods and I observe that they all are either bent up/down. I know that there could be some bending due to thermal mismatch between Si and SiO2, but I also want to know is there any way to release the excess residual stress other than the intrinsic residual stress (due to thermal mismatch).
What could be the reason for the pin holes on thin film ? The roughness of the film is around 0.40 nm
I want to coat lithium as a very thin layer over a steel wire. i would like to know the best method to do it.
The deposition rate from the 2 Ti targets in the reactive magnetron sputtering system has dropped significantly(depositing TiO2), from 30 nm/min to ~0.5 nm/min. What can be the reason of that?
Hi Everyone-
1. I am trying to make a thin (say, 60 nm) roughened gold film with as many nano-sized gaps as possible; has anyone got any fabrication advice to achieve this end?
2. A follow-up question regards the characterisation of such a film: what roughness parameter (if any) is useful to quantify the number of nano-sized spaces on the film? I believe Ra and RRMS are commonly used but that they do not indicate the density of ‘nano-gaps’ as such.
In advance, thank you for any help; it is much appreciated
Mike
Notes.
Ra is the arithmetic average of absolute values: R_a = 1/n ∑_(i=1)^n▒|y_i |
RRMS is the root mean square value: √(R_RMS = 1/n ∑_(i=1)^n▒y_i^2 )
Hello
I am making model HDPE and LDPE thin films ( 20nm) on silicon wafers and gold carriers for analysis and further adsorption tests. I am using thin L/HDPE sheets dissolved in Toulene at 72 degrees and then dip coating the carriers. The goal is to create model layers that mimic the inner surface of HDPE containers. I have analysed the composition and morphology of my samples to that of the HDPe containers.
Which properties ( roughness, composition, wettability, stability during dynamic stress?) would have to be comparable between the 'real' sample and my model thin films, for me to conclude that my model samples are representative of the 'real life' material.
What is a acceptable deviation (of characteristics) from the real model to make the same conclusion...
Would it be possible to dissolve the piece cut out of the container in Toulene, make thin films with that and then put through the analysis. ( My gut tells me this may not be that easy)...
Thanks !
I am synthesizing Cr2MnO4 TCO film by spin-coating on silicon(100) substrate using Cr(III) acetate hydroxide and Mn(II) acetate as precursor, disolved in methanol. I have tried to anneal at different temperatures from 600 to 800 but Cr2O3 is always there. When I decrease the addition of Cr(III) acetate hydroxide, Cr2O3 can be eliminated but the phase left there is Cr1.5Mn1.5O4 instead of Cr2MnO4! I have also tried Nitrates precursor chelated by citric acid but still get lots of Cr2O3. It seems that with the increase of temperature, Cr2O3 is depleted but when the temperature is above 850C, SiO2 appears. Can someone tell me how to deal with Cr2O3? I think I need to prevent the nucleation of it under low temperature but dont know what to do,
We run 3 cycles of TMA/H2O ALD on SiO2 materials to expect the coating of a thin layer of Al2O3 (about 0.3 nm thickness). However, based on the SEM EDS testing the weight percent ratio of Al/Si is ~0.4, which is pretty high indicating the CVD process happening. How to avoid this CVD to happen? Is this related to the surface properties of the SiO2 materials we used? Thanks.
We are making Si solar cells (n-type emitter, p-type base), where the rear contact (with base) is made by depositing Aluminum. The purpose is to create a p+ BSF layer and the rear contact altogether by depositing 800 nm Aluminum. To ensure that Al diffuses to the bottom of the base and creates a BSF layer, the samples are put in furnace (1000 degC for 10 min) after Al deposition, and then cooled down. Front contact is 500 nm Ag. The resulting cells give good Voc and Jsc, but the fill factor is consistently low (<50%). Is it because the rear contact thickness is too low to create BSF and contact altogether? Or, is there anything about the furnace temp/time?
I have prepare nanoparticles using laser ablation in liquid media.Varied energy from 60 to 180 mJ.I have actually randomly selected a sample prepared at 180mJ and than check the absorbance after 15 days....The absorbance increased but band gap decreased. What does It show??? the decay in band gap surely means agglomeration of particles but how the absorbance increased
Please help me with this.....
I need to make a thin film of RGO. I have tried it by dispersing RGO in DI water or Ethylene Glycol and spin coat it on substrate but film is not continuous and hence not useful for Electrical characterisation. Please let me know if other method is available.
I want to measure the resistance of the thin film and when I measure resistance difference between leads (1, 2, 3 and 4) using an ordinary handheld multimeter I get a value of 1-2 = 20 Ohm, 1-3 = 15 Ohm, 1-4 = 21 Ohm between the leads. Should the resistance increase linearly with the contact distance for good contacts. When I reverse the current I get the same value of the resistance. I have made contacts on the thin film using epoxy silver paste.
I want to etch my FTO substrate to fabricate multiple photovoltaic cell on single substrate. I want to know the best possible procedure for the controlled etching of FTO.
I have been exploring possible ways to release thin films off bulk silicon wafers. I have been using a sacrificial layer of Cr/Al but in order take that layer off it takes 1-2 days in salt water. I am looking for something that needs little or no exposure to water during release
PLA (Ingeo 2003D Nature Works) was solved in chloroform , the solution was cast on glass and dried in room temperature. The film was then pilled off the glass .the fabricated film is stretchable.What could be the reason of this observation?
I fabricate TiO2 nanotube on Ti substrate by anodic anodization.
After finishing anodization and rinsing, TiO2 nanotube is naturally peeled off
from the Ti substrate.
I've tried several liquid such as water, IPA, cyclohexane and ethylene glycol, but the adhesion between TiO2/Ti was very poor at every case.
Can anyone help me with this situation?
Actually I have prepared some thin film on glass substrate. to use these as electrode in liquid junction solar cells I am interested to immersed the substrate in electrolyte.
I am trying to make CZTS thin film using solgel method. Salts that I am using are Copper acetate monohydrate , zinc acetate dihydrate and tin chloride dihydrate with thiourea as a sulphur source.
As I increase the number coating beyond 5 layers, cracks start to develop in the precursor film.
Thank you
Jitendra Kumar
PHA of they type PHB and PHV are generated from microbial source, when we tried making molds it remains very flexibly and thin films made gets torn out between glass slides. Any idea on how to make it by simple techniques
Which kind of hood is better to use - with a horizontal or vertical stream? And I am worrying about possibility of vibration from air pumping motor. Could it be a problem for the film deposition?
Thanks
How organic compounds are used to fabricate quantum mechanically confined structures, there efficiency, cost of production and how productive they are?
After thermal deposition of Indium , how we convert it Indium oxide with the help of sintering?..
why nickel is deposited before aluminum deposition in making contact on solar cell.What is the thickness ratio for nickel and aluminum for good contact?
I am willing to form CdO thin film on glass substrate using CBD method. Can anybody please help me?
Does it matter whether someone uses wire or plate or mesh in electrodeposition of thin films and in Linear sweep voltammetry. Does a platinum coil, plate or a gauze electrode platinum influence the surface morphology of the thin film deposition.
I try to make metal oxide nanostructures on TCO
I have try to prepare Ni doped ZnO thin film by sol-gel spin coating method. In this work, dopant concentration increased from 0 to 0.6, intensity of diffraction peak increases and well crystalline nature was observed. But 0.8 concentration, the film fully amorphous state, and again increases the concentration to 1.0, the diffraction pattern become crystalline nature. So what is the main thing behind this crystalline changes while increasing the concentration. Any body suggest this question.
I fabricated a coaxial needle with gauge 22 and gauge 16 and tried to make hollow nanofibers from PAN solution in DMac (10%) using mineral oil as sheath fluid.
However, when I manipulated the flow, distance and voltage, instead of making a jet, small drops were ejected from the tip of needle and I could not adjust it to obtain a taylor cone. I know that it is due to high surface tension of big drops. But I have no choice of smaller needle.
Is there any idea how to overcome this problem?
Hi,
After doing experiments and depositing 4 different kinds of metals respectively on SiO2 mainly Cr, Al, Cu and Ag. I realize that each of the minimum thickness i can achieve is different. Can someone kindly explain why is this so especially for Cr i can achieve very low thickness as compared to other metal films
I want to make nice markers for my samples, using photolithography and metal sputtering.
When I do the lift-off the metal do not lift nicely and I have very bad defined markers...
I tried to reduce the exposure time to have sharper walls after resist development, but this did not help... furthermore I saw that the resist I use has a very large window for the exposure time.
I thought of using a thinner layer, but I am unsure that this could be a good solution.
Thanks in advance for your help :)
Is it right to use solution processed Tips pentacene as a semiconductor with cross-linked PVP as a dielectric with silver nanoparticles as gate/source/drain electrodes?
or i should use some organic conductive materials like PEDOT:PSS?
I am new to PC1D, trying to model a PERL solar cell with the input parameters taken from the paper which is attached here. I don't know how to put a surface passivation layer and ARC on the cell.
Temperature is around 180 degC. and spin coated @ 4000 RPM for 45 s.
In this case, thin films fabricated using DC magnetron sputtering method on Si substrate.
