Silicon - Science topic

I was reviewing recent results on Bruker D8 XRD with rotated in-plane stage.

Below is the XRD spectra measured in orthogonal stage rotation angles:

"zero" (as mounted on stage) - blue color and 90-degree rotation- red color:

(see attached figure)

Here the blue line demonstrates the large peak in 28.48 deg. It is a Silicon (111) peak, and we anticipate seeing this peak. However, this peak looks either to completely disappear after 90 deg rotation of stage. Peak at 22.2 deg, that apperent in red line belong to organic thin film on top and unrelated to substrate.

This does not really make sense as Silicon peak appearance (or shift) should not be dependent on stage rotation. For me it looks like that upon stage rotation of 90 degrees, the substrate somehow loose the diffraction condition. I suspect that something is wrong with these measurements, or I missing something in crystallography.

Did anyone got across the same problem with rotation stage? (I can test the bare Silicone substrate and record a Body plot for pure silicon substrate, 111 and 100)

Thank you

Vlad-

In this picture I cut 2 lines the middle picture's values are accurate, but the right picture give a wrong value, I think it's a bug cause when I move my cursor to the right picture, it gives a correct data. But when I try to save the cutline as " .dat" file, the data all equal to the y axis of the cutline picture.

It's a simple simulation of TRAP Assist tunnelling. Wish to get any help. Thanks!

Here is the code:

go atlas

mesh width=1.0e4

x.m loc=0.0 spac=0.5

x.m loc=1.0 spac=0.5

y.m loc=-0.005 spac=0.0005

y.m loc=0.0 spac=0.0005

y.m loc=0.01 spac=0.001

y.m loc=0.1 spac=0.01

y.m loc=1.0 spac=0.1

region number=1 y.min=0.0 silicon

region number=2 y.max=0.0 y.min=-0.005 oxide

electrode name=gate y.max=-0.005 material=aluminium

electrode name=substrate bottom

doping region=1 uniform n.type conc=5.0e17

doping region=2 uniform tat.trap conc=1.0e19 acceptor sign=1.0e-13 sigp=1.0e-13 e.level=3

material material=oxide mc=0.5 mv=0.5 affinity=1.07

material material=silicon nc300=2.73e19 nv300=1.02e19

output con.band val.band traps.ft

models srh fermi ni.fermi itat.sc.el tat.slicepts=51

### SOLVE ###

solve vgate=1

save outf=e3_vg1.str

solve vgate=5

save outf=e3_vg5.str

solve vgate=10

save outf=e3_vg10.str

solve vgate=20

save outf=e3_vg20.str

tonyplot -overlay e1_vg1.str e1_vg5.str e1_vg10.str e1_vg20.str

tonyplot

Traditionally, we use silicon grease or gel, however, they are not available in my area.

I found silicon sealer.

Is it possible to be used as couplant for AE sensor?

I am doing a project related to simulation crack propagation of silicon material using XFEM method on abaqus software and encountered an error. I hope you can help me.

I followed a similar video of yours to do this project. Link: https://youtu.be/RXz1-WiPn10?si=mVLzzuyoFExA1l9K

I don't know where I'm going wrong. Is the material specification wrong or generated mesh is wrong?

Thank you very much

I am working on a project using Sentaurus TCAD to design a Silicon and Silicon-Germanium quantum well structure. Below is the physics configuration I have implemented:

Physics(Region = "R.emitterl1") {

HeteroInterface

}

physics(Region = "R.qbl1") {

HeteroInterface

Active(Type=QuantumWell)

QWLocal(

eDensityCorrection

hDensityCorrection

)

}

Physics(Region = "R.emitterl2") {

HeteroInterface

}

physics(Region = "R.qbl2") {

HeteroInterface

Active(Type=QuantumWell)

QWLocal(

eDensityCorrection

hDensityCorrection

)

}

Physics(Region = "R.emitterl3") {

HeteroInterface

}

I encounter the following error when selecting materials via the "include material" function:

Could you please assist me in resolving this issue? Specifically, I need guidance on:

Thank you in advance for your support. I appreciate any insights or documentation references that can help address this problem.

Best regards,

Yuan

Wet isotropic etching of silicon

Kindly share the ASTM or EN, DIN, JIS standard for Ferro Silicon Rare Earth for my research purpose.

I want to know more about silicon formation.

The silicon wafers (100) we bought came with no flat edge allowing to determine the crystalline orientation. Do you know a quick method that could allow us to know the orientation ? We cannot perform Laue backscattering on every single one.

The cleaving process is quite random and 1/3 of the time the wafer just explodes...

Thanks

During an adsorption kinetics experiment, I observed that silicon adsorption in the soil started to decrease sharply after the first 30 minutes. I applied a 0.05 M NaCl solution containing 60 mg L⁻¹ of silicon to 1 g of soil, using sodium silicate and adjusting the pH to 5.5.

Does someone have an explanation for the time shift observed (approx. 20-25 min) on the graph below between (5 minute-average data):

- blue line = global horizontal irradiance (GHI) measured with the pyranometer of a CNR1 radiometer from Kipp and Zonen (thermopile type),

- yellow line = GHI measured with the pyranometer of a SP-110 pyranometer from Apogee (silicon cell type).

The two pyranometers are next to each other and log their data on different loggers.

It is not a problem of a clock shift because the variations in GHI between the two instruments match.

I also observe this shift on other clear sky days.

Hello!

I am trying to cure a large amount of PDMS in a platinum silicon mold. How long should I cure it for? It is a cone shape and has a thick base of about 8 mm and the end (top) portion is really thin: about 1 mm or a little less. I degassed it for about 3 hrs. I know the suggested is 30 mins but it wasnt ready until much later.

my plan was let it sit for 24 hrs at room temp then put In drying over at 60 degrees for a couple hours.

thoughts?

go atlas simflags="-p 4"

mesh three.d

#

x.m l=-0.2 spac=0.02

x.m l=-0.02 spac=0.005

x.m l=0.02 spac=0.005

x.m l=0.2 spac=0.02

#

y.m l=-0.275 spac=0.02

y.m l=-0.135 spac=0.04

y.m l=-0.045 spac=0.005

y.m l=0.045 spac=0.005

y.m l=0.135 spac=0.04

y.m l=0.275 spac=0.02

#

#

z.m l=-0.1 spac=0.03

z.m l=-0.005 spac=0.001

z.m l=0.06 spac=0.005

z.m l=0.21 spac=0.2

z.m l=0.5 spac=0.2

#

region num=1 material= silicon x.min=-0.2 x.max=0.2 y.min=-0.275 y.max=0.275 \

z.min=0.21 z.max=0.5

region num=2 material= sio2 x.min=-0.2 x.max=0.2 y.min=-0.275 y.max=0.275 \

z.min=0.06 z.max=0.21

region num=3 material= poly x.min=-0.2 x.max=0.2 y.min=-0.045 y.max=0.045 \

z.min=-0.1 z.max=0.06

region num=4 material= hfo2 x.min=-0.025 x.max=0.025 y.min=-0.045 y.max=0.045 \

z.min=-0.005 z.max=0.06

region num=5 material= silicon x.min=-0.02 x.max=0.02 y.min=-0.135 y.max=0.135 \

z.min=0 z.max=0.06

region num=6 material= silicon x.min=-0.02 x.max=0.02 y.min=-0.275 y.max=-0.135 \

z.min=0 z.max=0.06

region num=7 material= silicon x.min=-0.02 x.max=0.02 y.min=0.135 y.max=0.275 \

z.min=0 z.max=0.06

#

elec num=1 x.min=-0.2 x.max=0.2 y.min=-0.045 y.max=0.045 z.min=-0.1 z.max=-0.1 name=gate

elec num=2 x.min=-0.02 x.max=0.02 y.min=-0.275 y.max=-0.045 z.min=0 z.max=0 name=source

elec num=3 x.min=-0.02 x.max=0.02 y.min=0.045 y.max=0.275 z.min=0 z.max=0 name=drain

#

doping uniform p.type conc=1.e17 x.min=-0.2 x.max=0.2 y.min=-0.275 y.max=0.275 z.min=0.21 z.max=0.5

doping uniform p.type conc=1.e17 x.min=-0.02 x.max=0.02 y.min=-0.135 y.max=0.135 z.min=0 z.max=0.06

doping uniform n.type conc=3.e22 x.min=-0.02 x.max=0.02 y.min=-0.275 y.max=-0.135 z.min=0 z.max=0.06

doping uniform n.type conc=3.e22 x.min=-0.02 x.max=0.02 y.min=0.135 y.max=0.275 z.min=0 z.max=0.06

save outf=fin_0.str

interface qf=3e10

contact name=gate n.poly

models conmob srh auger bgn fldmob print

solve init

method newton trap

solve vdrain=0.05

log outf=fin_0.log

solve vgate=0 vstep=0.05 vfinal=0.8 name=gate

extract name="vt" xintercept(maxslope(curve(v."gate",i."drain"))) \

- ave(v."drain")/2.0

quit

Hello everyone, I am simulating reflectance spectra (lambda range 400 nm to 1100 nm) of a periodic structure of dielectric spheres (triangular lattice of a monolayer) on a silicon substrate in "The COMSOL multiphysics wave optics module." The periodicity of the unit cell is around 400nm. I included diffraction orders and implemented PML. Instead of using silicon as a domain, I used impedance boundary conditions at the bottom with silicon material assigned to the boundary(exit). I am getting unphysical reflections at oblique incidence (not in normal incidence). But if I replace the sphere with the flat dielectric layer, those artifacts will not arise even at oblique incidence. It happened when I placed a sphere in the periodic structure.

Moreover, the sharp dips are red-shifting if the angle changes from 45 to 75 deg. Here, the impedance boundary is not the problem; when I simulated with a flat, thin film, I used the impedance boundary instead of the silicon domain. The results of the thin film matched the experimental data (I verified by implementing the silicon boundary; the results are the same in the case of thin film). The problem appears only for the sphere. Is there any way to solve this problem?

Thank you.

I conducted an adsorption experiment of arsenic on soil in the presence of different doses of silicon as competing ions to see the effect of silicon on arsenic adsorption and desorption. I took 5 concentrations of silicon, namely 0, 1, 10, 100 and 1000 ppm. Although adsorption behaviour was correct and in line with what I expected to be in the presence of 0 to 100 ppm of silicon, I was shocked to see that in the presence of VERY high concentration of silicon i.e. 1000 ppm, the adsorption isotherms are showing opposite trends, the Langmuir bonding energy coefficient (Kl) shows the impossible negative value and the Freundlich exponential coefficient too showing values (more than 1). Why is this happening in the presence of a very high concentration of silicon as competing ion?

Hello all,

I am trying to determine the dependence of the energy gap of silicon as a function of temperature. In the literature, it is stated that the decrease in the energy gap of silicon with increasing temperature can be explained by thermal expansion and electron-phonon interaction.

First, I used the thermo_pw library (which uses the QHA approximation) to determine the lattice parameter of silicon as a function of temperature. Then, I ran the following calculations: SCF, NSCF, DOS, band, and finally plotband. I performed these calculations using the lattice parameters of Si corresponding to temperatures in a range from 4K to 800K. For this simulation, I am using PBE pseudopotentials, an ecutwfc of 25 Ry, and a unit cell with 2 atoms.

The problem is that the gap increases with temperature instead of decreasing. I obtained a gap of 0.6187 eV at 4K and 0.6315 eV at 800K.

I also tried calculating the band structure considering electron-phonon coupling using the EPW library, but the gap still increases with temperature.

Has anyone already tried to calculate the silicon gap as a function of temperature? What am I doing wrong?

I need to measure carrier concentration profile in phosphorus doped poly-crystalline silicon thin film. Is there any group who has the facility to perform ECV ( electrochemical capacitance voltage) profiling measurement, preferably in Florida or nearby?

I need some help to solve this exercise, if possible.

we consider an n-doped amorphous silicon layer (silicon atomic density of 5e22/cm3) which displays a doping efficiency versus relative dopant concentration curve as displayed below. relative dopant concentration is given as the ratio of dopant atom density over silicon atomic density. the doping efficiency is the average number of charge carriers provided by one dopant atom at room temperature. this material has a dopant atom density of 5e19 /cm3, and an electron mobility of 0.5 cm2/vs.

what is the sheet resistance (rsheet, defined by resistivity divided by thickness) of a film of this material with a thickness of 100 nm?

I have a CVD-prepared material. The problem is that the LASER covers a smaller area than the islands, so I see localized effects. Sometimes, the intensity of the silicon peak is larger than the sample, and sometimes, it is otherwise. How do I deal with this?

I really appreciate any help you can provide.

How can we simulate TSV in the Silvaco example?

Exactly, I need the instructions for the attachments file.

Best regards.

I am using 20 mg of WO₃, 800 mg of Sulphur, 925 ^oc growth temp, 280 ^oc S temp, and a 20 sccm gas flow rate.

Seeking to procure pure silicon powder within the 20-75 range or comparable specifications. Where might one find such a product available for purchase?

I want to add silicon diooxide layer in my solar cell Struture as passivation layer. I am using Silvaco Tcad Softwere.

code that I write as follow

Region num = 7 x.min=0 x.max=1 y.min=0.5 y.max=0.6 mat=Sio2

material mat= Sio2 sopra=Sio2.nk mc=0.42 mv=0.16

Only adding this layer cel desnot show any output.

I dont know what to do next?

Dear scientists, we are currently conducting a mouse model for wound healing. The process is as follows: make the wound, apply and suture the silicone splint, apply the tegaderm and apply the treatment topically every two days. Our problem is that after 6 days, the mice start removing the silicone. Is it common for silicone to be removed? Would it be possible to put it back on or put another one on? What could we do to avoid this? Thank you so much!

Kindly assist with my challenge. I used stress/atom commands in LAMMPS to calculate Von miss stress and hydrostatic stress of a silicon nanometric cutting. Unfortunately or fortunately I got hydrostatic stress of maximum -3GPa and 1GPa which is low compared to 11GPa - 14GPa for Si and diamond tool with 204241 atoms. Note, the hydrostatic stress is for tool atoms group. I attached the stress part of the script. If there is a need to attach the entire script, I will.

I have used Keller's reagent till now but I am not able to see silicon network in SEM. I am also facing problem in etching. Some times I can see the microstructure in Optical Microscope but not able to see silicon network in SEM in same sample.

Kindly guide me please.

I am analyzing some transient absorption data for hydrogenated amorphous silicon. Its seems that the banggap is around 1.7 eV i.e. 730nm. The pump is at 350nm and the probe from 500-900nm. I have gone through number of literature, but havenot seen ground bleach signal. The data that I have also show no ground bleach, as per my understanding, there would be ground bleach around the band gap.

Is it normal, please if someone did it guide me, or give me a link

Dear reader:

Thank you very much for looking into this question!

I am testing a dry etching process that transfers the photoresist profile into silicon. The target is using O2/SF6 reactive ion etching (RIE) to achieve a 1:1 selectivity (Si etching rate: photoresist etching rate 1:1). But when I am close to the 1:1 selectivity by: changing O2/SF6 ratio; changing the power; changing the pressure, I always see a dark, rough surface.

I notice that this phenomenon might be due to the SiO2 mask layer forming on the wafer surface, so I am adding CHF3 for Si etching, but similar things happen when selectivity is close to 1:1. So would there be any other reasons for this phenomenon? How can I improve the roughness? I can only tune the power, pressure, and gas mixture, without control for temperature and DC bias.

Thank you very much if you can give me any clue!

Hi,

In my FDTD simulation result of transmission intensity for IR source (12 µm) over thin film ( thickneess 4µm) at different angles, I found that the intensity is maximum when theta angle is 30.

may i know what could explain this and is there any experiment result to verify?

thanks

What reaction(s) can be expected between Si and ethylene glycol when mechanical energy is added? T < 70°C, fractured Si surface of many orientations, not oxidized, not passified. Inert gas atmosphere. Little, but some, O2 (g) is present except for what is dissolved in the alcohol. It is not degassed.

I am a undergraduate student new in the research of brain-mapping. I am currently switching from FreeSurfer to FastSurfer to speed up the brain-mapping process.

I am using a MacBook with Apple Silicon. When I tried to run FastSurfer with Docker, the speed was really slow. When I tried to run it natively, run_fastsurfer.sh didn't seem to be running properly. However, it seems that running FastSurfer natively on Apple Silicon should be feasible based on my online research.

Could anyone familiar with this topic give me any suggestions?

Thank you so much for your time in advance.

Is it possible to build two or more kinds of doped silicon on each other? For example, building a 1 um p-doped silicon on 1um n-doped one? while they have been separated by an insulation layer?

The picture shows a GITT diagram of a graphite and silicon composite half cell. Why does it indicate a reversible to higher voltage in the circles shown? Is it due of the electrode's high resistivity, or is there another reason?

I am using FDTD method for the simualtion.

If I want syntheses the EGFET, using n or p type but if using silicon substrate,

My microparticles turn to white when they are in contact with pbs or water. This occur with no reason and i would like to know why and if this would affect their capacity to load antigens and their adjuvant effect

Dear community,

I am working on X-ray photoelectron spectroscopy (XPS) on amorphous silicon carbonitride thin films. My material mostly exists in mixed environments, i.e., silicon bonded to carbon and nitrogen in its local chemical environment as SiC3N. I assume XPS gives only one Si 2p signal from the mixed environment. In a situation like this, is it appropriate to deconvolute the silicon spectra into two peaks corresponding to the Si-C and Si-N bond environment?

If I fit one peak, the residual STD is greater than 1.5. Or should I fit two peaks for Si2p 3/2 and Si2p 1/2 with a spint-orbit splitting energy of 0.6 eV?

Hi everyone, just I said above Does anyone know a supplier of PDMS (silicone) Hollow fiber membrane?. I need to buy per meter of this product

go atlas

mesh space.mult=1.0

#

x.mesh loc=0.00 spac=0.01

x.mesh loc=0.20 spac=0.0001

x.mesh loc=0.25 spac=0.01

x.mesh loc=0.30 spac=0.0001

x.mesh loc=0.40 spac=0.01

x.mesh loc=0.5 spac=0.01

#

y.mesh loc=0.00 spac=0.001

y.mesh loc=0.002 spac=0.001

y.mesh loc=0.005 spac=0.001

y.mesh loc=0.035 spac=0.01

y.mesh loc=0.065 spac=0.15

#

region num=1 material= Air x.min=0 y.min=0

region num=2 material= SiO2 x.min=0.2 x.max=0.3 y.min = 0.002 y.max=0.005

region num=3 material= silicon x.min=0 x.max=0.2 y.min =0.005 y.max=0.035

region num=4 material= silicon x.min=0.2 x.max=0.3 y.min =0.005 y.max=0.035

region num=5 material= silicon x.min=0.3 x.max=0.5 y.min =0.005 y.max=0.035

region num=6 material= silicon x.min=0 x.max=0.5 y.min =0.035 y.max=0.065

#

electrode name= gate x.min=0.2 x.max=0.3 y.min =0.0 y.max=0.002

electrode name= source x.min=0 x.max=0.1 y.min =0.002 y.max=0.005

electrode name= drain x.min=0.4 x.max=0.5 y.min =0.002 y.max=0.005

#

doping uniform concentration= 1E13 p.type region=6

doping uniform concentration= 1E20 n.type region=3

doping uniform concentration=1E13 p.type region=4

doping uniform concentration=1E20 n.type region=5

#

contact name= gate n.poly

inter qf=3e10 y.max=0.005

contact name= source

contact name= drain

#

models cvt srh print

#

#output val.band con.band qfn qfp e.field j.electron j.hole j.conduction j.total ex.field ey.field flowline e.mobility h.mobility qss e.temp h.temp j.disp band.param charge

#

Method gummel newton

Solve init

#Solve prev

#Solve vdrain=0

#Solve vdrain=0.1

#Solve vdrain=0.5

Solve vdrain=1.5

#Solve vdrain=2

#Ramp the gate

#

Log outf=100nm_Vt_output.log master

Solve vgate=0 vstep=0.25 vfinal=3 name=gate

save outf=100nm_Vt_output.str

#plot result

tonyplot 100nm_Vt_output.log

#tonyplot 100nm_Vt_output.str

#extract device parameter

extract name="vt"(xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \

- abs(ave(v."drain"))/2.0)

#

quit

I had a quick question about tape casting/slurry coating films in general, and was hoping for some insights on getting a freestanding tape of Silicon or Carbon/Alumina. I'm trying to get freestanding tapes that are 100 - 300 um thick to cut to size for a subsequent heat treatment process.

I'm having difficulty in getting the dried film to release and have no idea why. My substrate is silicone coated mylar (release film), binder is Polypropylene carbonate, and solvent is DMC (Dimethyl Carbonate). Solid weight loading is around 30 - 35 wt%, binder is 5 - 10 wt %, and solvent is the rest. Does anyone have experience with the same?

There are many problem in thermal evaporating SiO material.

Have you ever experience the similar problem?

I would like to buy an automatic spinner system for Si wafer etch with KOH by using spinning method at 85 C temperature. The KOH must be collected then will be reused. Is there a system like this?

which "study", from comsol, to use to calculate the transmission spectrum of 2D photonic crystal device? And how to configure it? Basically the device is a crystaline network of silicon rods immersed in air with defects that form 4 channels. I used Domain wavelength, but my results weren't very good.

Dear All

I would like to coat silicon tubings (Tygon) with 1% Pluronic F127 to prevent cell attachment inside the tubing. Can I use the coated tubings 1 day after I coated or should I use immediately after the coating? Thank you very much!

Best

Su

I've been researching about SHJ structure and couldn't find the reason. Is someone know?

How does it sound if the enhanced content of pentavalent impurity, such as Phosphorus, exhibits a greater affinity for Silicon? Could this parallel the integration scenario of DNA with Silicon?

Diving into to the basic concept of semiconductors, we know the Base-Emitter voltage for a typical silicon based transistor is 0.7 Volts when both p type and n type are doped with silicon.

What if we could dope the either type with both extrinsic silicon material and germanium material? What theory would explain the experimental effects of doing so? If precisely, also the nearest values?

I am simulating a particular waveguide using COMSOL Multiphysics software, for that I have to use the in-direct bandgap property of Silicon in y structure. So, how to assign the in-direct bandgap parameter of the Silicon in COMSOL.

Atoms of SiC material, one silicon atom will connect four carbon atoms, is the bonding energy between this silicon atom and four carbon atoms the same?

If XPS measurements are performed on silicon wafer and gold with a thin silicon IV oxide deposited on top of the two sample?

I have multicrystalline silicon wafers (mc-Si), and I do not know their grade. Is there a simple method that can be used to classify this material? The minority carrier lifetime measurement, is it sufficient to make this classification, or I have to make further characterization such as the determination of their impurities contamination level ?

I am depositing Silicon using RF magnetron sputtering onto glass/CaF2 substrates for my research.

My standard process parameters are:

Power: 400W

Pressure: 0.24Pa

Base pressure: 3.35e-4 Pa

Target to substrate distance is about 6cm

Reflected power: 9W

Vbias: 360V

I have ran this process in the past and it has worked fine to produce a film of about 1µm thickness for about 100 minutes deposition time. But since last week when I try to run this process, there is no material on the substrates at all and there is also some amount of dust accumulated on top of the target after the process.

I thought this issue could be from the dark shield being placed incorrectly but I checked different position and it did not change anything. My other thought is that the substrate holder is somehow not grounded properly anymore and the material atoms are no longer being accelerated towards the substrate. I have no checked this as I am not sure how to check the bias between the target/magnetron source and the substrate holder safely.

Any advice/suggestions on what the issue could be or how to fix this would be appreciated. Thanks.

For example, the primary region of Silicon element is 2p, why not 1s or 2s?

Hi, I wanted to do mode analysis of two coupled silicon waveguide separated with 200 nm with the dimension of 400 nm and thickness 0.215 nm. What should be the height and width of cladding? I also have prepared file for it, but results is not getting as expected.

When I do the PPC-PC reverse dry transfer method, PPC and the sample fall on the PC, and then I melt the PC/ sample /PC onto the silicon chip, how do I remove both PPC and PC to get the sample?

I am trying to deposit a thin film of hydrogenated amorphous silicon by RF magnetron sputtering.

silicon half cell testing

I want to design a silicon metasurface (SIO2 substrate and single Si nanofin) to operate in Near Infrared Region in CST. What parameters (values) i need to accurately model Si/SiO2?

Among the various factors of technological and developmental advantage of individual countries in terms of international comparisons, the possession of advanced technologies, including biotechnology, green energy technologies but also new ICT information technologies and technologies typical of the current fourth technological revolution, Industry 4.0 technologies, stands out. The possession of these technologies determines the possibilities for the development of many industries, including the manufacture of products that are increasingly produced as highly technological products equipped with, for example, microchips.

Microchips are no longer used only in computers, laptops, PDAs, tablets, smartphones, supercomputers built in research centres and further types of highly technological products, but also in white goods, consumer electronics, TV, motor vehicles, including cars, aircraft, military equipment, etc. and, more recently, in systems based on artificial intelligence being built and developed. Microchip production is associated with certain determinants for the development of other economic sectors as well. The production of microchips is a highly energy-intensive process. Therefore, it is also necessary to develop new, renewable and emission-free energy sources to supply electricity to, among other things, microchip production processes.

Currently, there are aspirations and research in many countries to identify opportunities for the development of advanced ICT and/or to create the conditions for the creation of a kind of next "Silicon Valley", including microchip manufacturing companies. As in the case of other industries, so in the case of new ICT information technologies and Industry 4.0, the key factors determining the possibility of building new companies producing advanced microchips include such basic categories of capital as financial capital, possession of research and development centres, science centres generating also the intellectual capital of the staff of employees, possession of modern lines and machine parks produced mainly by domestic industries, generating technological and production capital, with which industrial plants and companies included in technological sectors are equipped. However, this is not all that is required to build a thriving sort of new, next "Silicon Valley" and to be able to be at the forefront of the new ICT information technologies, Prezmysł 4.0, including the production of highly technological microchips. Perhaps among the mentioned key determinants of the development of technology companies are new specific business models, new styles of management, personnel management and motivation to create technological innovations. In addition, perhaps the key factors determining the development of technology companies should also include a highly economically efficient mix of flexible pro-development economic policies, including policies to support the development of science, scientific research, the development of research and development centres, policies to develop innovation; systemically developed highly efficient corruption-free financial support programmes from the state's public finance system; a friendly economic policy for the development of innovative startups; modern ownership models and shareholding structures of technology companies, research institutes and research and development centres, etc.

In view of the above, I address the following question to the esteemed community of scientists and researchers:

What do you think about this topic?

What is your opinion on this subject?

Please respond,

I invite you all to discuss,

Thank you very much,

The above text is entirely my own work written by me on the basis of my research.

I have not used other sources or automatic text generation systems such as ChatGPT in writing this text.

Copyright by Dariusz Prokopowicz

Best regards,

Dariusz Prokopowicz

In some cases of MoS2 thin film fabrication, the methods usually used are CVD, spin coating and dip coating. In the three methods mentioned, usually the deposited film is heated at high temperatures above 800C. Because the substrate used is Silicon, it will be fine.

What if the substrate we use is not silicon, for example BK7 glass? Some papers transfer MoS2 from a silicon substrate to the desired substrate, but I'm not sure the MoS2 layer will bond tightly with the substrate I use.

I was trying to use antechamber to obtain the mol2 file for a silicon containing molecule. But GAFF2 force field does not have the parameters for silicon and that's why antechamber could not recognize the 'si' atom. Can anyone kindly help me regarding this issue?

Ultrafiltration or Centrifuge? I am a little bit confused with these two methods. please Give me some suggestions.

If possible, attach literature.

Thank you in advance.

We have created several variations of our MEMS gyroscope, out of highly p-doped silicon. The natural frequencies are off by +7% compared with our simulations, and we don't know why. Is it the material properties, i.e. Young's Modulus + Poisson ratio? We tried looking in the literature for these values, but they don't explain our frequency differences. We also measured the geometry of our devices, but everything is within tolerance.

If possible, It would be great if you recommend some literature as well.

Thank you in advance.

Hello colleagues,

I have been facing a DRIE (Deep Reactive Ion Etching) problem lately. I start with a silicon wafer, and deposit a 50 nm Al2O3 film as a hard mask. Then, I use photolithography to create a pattern and etch away part of the Al2O3 mask using BCl3/Ar dry etching. Next, I strip the resist, leaving only Al2O3 on silicon as a hard mask. Before DRIE, I conduct one more cleaning step of 5 min oxygen plasma and 30 s silicon oxide etching. The DRIE tool we use in our facility is Unaxis 770. However, after 50-100 loops, sometimes the etched area becomes very rough with many small holes. Can anyone give me some hints about why the etching is not uniform and what causes the holes on the silicon surface? I would really appreciate any suggestions. Thank you!

Graphite is an allotropic modification of carbon, therefore it is a non-metal. In general, non-metals do not conduct electricity. Carbon is from the same group as silicon and germanium. It can be assumed that it is rather a semiconductor.

For changing the material concentration, where and how can we make changes.? I want to change the silicon concentration in the SiGe material but I don't know how to do it.

Eventhough LPCVD SiN is etched by KOH in a very less amount, whenever a long duration(~5 hour) 30% KOH ethcing is done, SiN also gets affected. Is there any methods to prevent it?

What are the alternatives and options.

I need to refine metallurgical silicon to poly crystalline silicon but the source contain 60 ppmw P and 40 ppmw B

I'm working on a Cleaning Validation by TOC on 5 differents MOC:

- Stainless steel

-Glass

-PTFE (Téflon)

- Silicone

-PU (polyurethane)

I'm expériencing problem to obtain proper Blank coupons especially with the silicone.

I'm looking for any tips to clean my coupons properly.

thanks in advance

At the start of the week, Fed Chair Jerome Powell made clear that the Fed would continue rate hikes as year over year inflation, although down from its 9.1% peak remained stubbornly high at 6%. This is 4% above the Fed's target of 2%. The odds of a 50 basis point hike in the federal funds rate target seemed likely at the fed's next policy meeting. However, the collapse of SVB, the biggest bank failure in the U.S. since the 2008 financial crisis and concern about contagion to other banks, has raised the question of whether the Fed will revise its future rate increases downward in coming months in 2023. It also raises the question of whether a Recession in 2023 and 2024 has now become more likely.

I think the best way to stop the collapse of this bank is to ban a run on the bank and not allow all depositors to withdraw money at the same time. In my theory, "forbid all depositors from withdrawing money at the same time" is a program, and economic activity is a procedure, and the government, as the brain of the country, has the right to establish such a procedure. Of course, what if someone is in urgent need of money? This can be reviewed, by the relevant person to check if he really need the money, this practice is also a program.

I need adavice regarding application of Silicon Heating Element which is a contact based heating method. I wish to heat such an arrangement heating plate with pin ( a concept as of now) this wold indeed heat my impeller. I need to heat it only till 80 degrees. Later I want to fit the impeller on to a shaft. Please let me know what kind of arrangement/set up would be needed for such a system. Looking forward to your inputs