Semiconductor - Science topic

This paper details the design and development of an immersive and self-guided Virtual Reality training system (iSGVRTS) for learning cleanroom microfabrication operations, with a specific emphasis on the photolithography process, within a college-level semiconductor laboratory curriculum. It presents the thorough construction of the iSGVRTS environ...

GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we...

We present a comprehensive first-principles study of Ru-doped Li2MnO3 cathode material for lithium-ion batteries, utilising hybrid density functional calculations. Ru was chosen due to its ability to enhance cycling stability and structural integrity. The investigated structures, adapted from a previous study and generated through cluster expansion...

Power semiconductor modules are increasingly applied in the electrical power conversion system, whose development has been characterized by increasing power density and higher operation (or junction) temperature. However, this development presents additional challenges for the packaging assembly of power modules, especially for the packaging materi...

Amorphous oxide semiconductors (AOS) are pivotal for next‐generation electronics due to their high electron mobility and excellent optical properties. However, In2O3, a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high e...

InSb nanoflags, due to their intrinsic spin–orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high transparency of the superconductor/semiconductor interfaces, is reported to lead to interesting phenomena such as the Josephson diode effect. The versatility offered by the p...

For many years, high-power laser technology has been divided between industrial applications, which prioritize higher average powers and repetition rates, and academic research, which focuses on achieving higher peak powers and ultrashort pulse durations. The introduction of Yb-doped crystals in laser technology has paved the way for a new generati...

The presence of pharmaceuticals in aquatic ecosystems is an issue of increasing concern. Regardless of the low concentration of pharmaceuticals in water, they can have a toxic effect on both humans and aquatic organisms. Advanced oxidation processes (AOPs) have been described as a promising technique for eliminating pharmaceuticals due to their hig...

Rational interface engineering via regulating the anchoring groups between molecular catalysts and light‐absorbing semiconductors is essential and emergent to stabilize the semiconductor/molecular complex interaction and facilitate the photocarriers transport, thus realizing highly active and stable photoelectrochemical (PEC) water splitting. In th...

Neural network (NN)-based compact modeling methodologies are gaining attention due to the challenges of device complexity, narrow model coverage, and SPICE simulation speed in advanced semiconductor technology nodes. As device complexity increases, the number of process and structural variables also increases, which significantly increases the amou...

Ultra-low temperature chillers have seen increasing demand with the advancement of semiconductor technology. Mixed refrigerant (MR) cascade refrigeration systems (CRSs) are widely utilized for their stability and high cooling performance at low temperatures. Extensive research has been conducted on optimizing MR, which has a significant impact on C...

Precise deposition of materials on surfaces is among crucial steps in broad range of applications and functional device fabrication at both micro- and nanoscale. Semiconductor quantum dots (QDs) with their...

Accurate determination of charge carrier mobility is a critical aspect in an organic field-effect transistor (OFET) as it is tightly correlated to the development of new materials, better device designs and improved fabrication methods. The presence of high contact resistance at the metal–organic semiconductor interface introduces an intrinsic erro...

We systematically study the transport properties of arsenene nanoribbon tunneling field-effect transistors (TFETs) along the armchair directions using first-principles calculations based on density functional theory combined with the non-equilibrium Green’s function approach. The pristine nanoribbon TFET devices with and without underlap (UL) exhib...

O-band intensity modulation and direct detection (IM/DD) transmission offers a promising solution for high-speed data center interconnects (DCIs). Additionally, the introduction of bismuth-doped fiber amplifiers (BDFAs) results in less nonlinear impact and a higher link budget compared with semiconductor optical amplifiers (SOAs). However, with the...

Gallium oxide (Ga₂O₃), a semiconductor, has recently attracted the attention of many researchers and specialists due to its large band gap and thermal stability, which has made it widely used in several fields, including modern electronics and optoelectronics. In this paper, the many forms and properties of gallium oxide materials will be highlight...

SrNbO2N is a promising narrow‐bandgap semiconductor for sunlight‐driven water splitting but is generally subject to insufficient photocarrier separation and severe photocorrosion. Here, the targeted single‐crystalline SrNbO2N nanobelts are passivated by consecutive annealing in O2 and N2/NH4F to approach the right N/O ratio (1/2) and anion content...

The design of metallic contact grids on the front side of thermophotovoltaic cells is critical since it can cause significant optical and electrical resistive losses, particularly in the near field. However, from the theoretical point of view, this effect has been either discarded or studied by means of extremely simplified models like the shadowin...

Detailed simulations have been undertaken of the dynamical response of linear and triangular arrays of nano-lasers to external optical feedback from a common external mirror. Careful attention is given to forms of dynamics that arise in such devices when experimentally accessible parameters such as the optical feedback strength, laser bias current,...

In recent years, chiral semiconductor nanocrystals (NCs) have attracted extensive interest from researchers and significant research progress has been made. In order to provide researchers with a comprehensive and in-depth perspective in this topic, this review will summarize the recent research progress in the chiral semiconductor NCs, including s...

Topological materials attract a considerable research interest because of their characteristic band structure giving rise to various new phenomena in quantum physics. Beside this, they are tempting from a functional materials point of view: Topological materials bear potential for an enhanced thermoelectric efficiency because they possess the requi...

The fundamental tradeoff has made it difficult to enhance the low permittivity of wide bandgap semiconductors without sacrificing the bandgap. In this work we demonstrate that high-concentration substitutional Be doping can enhance NiO’s dielectric properties and simultaneously widen the bandgap. Up to 5 at% of Ni in NiO could be substituted by Be...

The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the W...

In-memory sensing and computing devices integrate the functionalities of sensors, memory, and processors, offering advantages such as low power consumption, high bandwidth, and zero latency, making them particularly suitable for simulating synaptic behavior in biological neural networks. As the pace of digital transformation accelerates, the demand...

Predicting spectra and related properties such as the dielectric function of crystalline materials based on machine learning has a huge, hitherto unexplored, technological potential. For this reason, we create an database of 9915 dielectric tensors of semiconductors and insulators calculated in the independent-particle approximation (IPA). In addit...

A mediados del siglo XIX, Dmitri Mendeleev publicó la primera tabla periódica de los elementos. Esa tabla es un instrumento fundamental para los estudios de química. Hoy queremos presentarte una tabla periódica interactiva de los elementos adaptada al siglo XXI. Es una creación gratuita de la empresa Fisher Scientific, que adapta al ambiente digita...

Amid growing geopolitical tensions and supply chain fragilities, many countries adopt new industrial policies aimed at reshoring strategic industries. Simultaneously, rising awareness of the link between feelings of disenfranchisement and regional development levels underscores the strategic importance of intra-national industrial location. Within...

In this article, a novel gallium oxide metal semiconductor field effect transistor (MESFET) is presented. This device is designed for high-power and high-frequency usage and features embedded potential barrier layers on each side of the gate metal within the channel. The gallium oxide semiconductor (Ga2O3) is highly valued in semiconductor technolo...

To investigate the relationship between microstructure, chemical composition, and thermoelectric properties, we have applied graded temperature heat treatments to recently developed τ1-Al2Fe3Si3-based thermoelectric (FAST) materials formed by a peritectic reaction. We investigated microstructures, chemical compositions, and Seebeck coefficients as...

Graphene, a two-dimensional material with exceptional electrical, optical, and mechanical properties, have positioned it as a promising material for photodiode applications. This review delves into the development of graphene materials, emphasizing synthesis, deposition techniques, and characterization. Deposition methods, including spin-coating an...

The application of a material is determined by the energy barrier for charge transport between the insulator and semiconductor. For instance, a thin-film transistor (TFT) requires a large energy barrier to prohibit charge transport across the insulator–semiconductor interface, i.e., the insulator is at charge block status. Besides, there have been...

The growing demand for solid‐state magnetic cooling, leveraging the magnetocaloric effect requires the discovery of high‐performing magnetocaloric materials (MCMs). Herein, a family of Gd‐containing MCMs is provided, specifically the Gd4.5A0.5Si3O13 (A = K, Na, and Li) oxides, which demonstratse exceptional low‐temperature magnetocaloric performanc...

We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in terms of atomic layer deposition (ALD) material engineering, high-field transport, and statistical variability. We have developed and systematically compared InGaO (IGO), InZnO (IZO), and InGaZnO (IGZO) FETs by ALD....

This study applies the generalized photo-thermoelasticity theory to investigate thermo-hydro-mechanical interactions in a poroelastic half-space elastic semiconductor material with variable properties. The model represents a novel approach, treating the material as a uniform, fully saturated, poroelastic semiconductor half-space in alignment with t...

The unique and interesting physical and chemical properties of metal–organic framework (MOF) materials have recently attracted extensive attention in a new generation of photoelectric applications. In this review, we summarized and discussed the research progress on MOF-based photodetectors. The methods of preparing MOF-based photodetectors and var...

Network reconfiguration is a very economical technique that can improve electrical system performance. The development of semiconductor electrical equipment technology to meet human needs and work, known as nonlinear loads, has had a negative impact in the form of the spread of harmonic distortion which can accelerate the aging process and even dam...

The IV–VI semiconducting chalcogenides are a large material family with distinct physical behavior. Here, we systematically investigate the effect of pressure on the electronic and crystal structures of PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction (XRD) measurements. The resistivity of PbSe and PbT...

Leakage current flow is an important issue of transformerless (TL) inverters due to the absence of galvanic isolation between the source and grid sides in grid-connected solar photovoltaic (PV) systems. This article proposes a five-level (5L) TL direct ground point (DGP) type inverter employing two switched capacitors (SCs). The DGP configuration s...

The Efros–Shklovskii (ES) Coulomb gap in the one-electron density of localized states and the ES law of the variable range hopping conductivity were coined 50 years ago. The theory and its first confirmations were reviewed in the Shklovskii–Efros (SE) monograph published 40-years ago. This paper reviews the subsequent experimental evidence, theoret...

In this study, the Destruction or Removal Efficiency (DRE) of 10 types of F-gases used in the semiconductor and display industries in South Korea was measured. These industries use a large volume of F-gases with high Global Warming Potential (GWP), significantly contributing to national greenhouse gas emissions. Therefore, accurately calculating th...

The electronic and optical properties of a mesoscopic heterostructure of a two-dimensional quantum ring composed of Gallium Arsenide (GaAs) semiconductors are investigated. Using the confinement potential proposed by Tan and Inkson to describe the system under analysis, we conducted a numerical study of the photoionization cross-section for a 2D qu...

Single-photon emission computed tomography (SPECT) is an important nuclear medicine imaging tool for diagnosis and drug research. The gamma-ray detector is the core component of the SPECT system and influences the overall system performance. The detector crystals, which can be divided into scintillation crystals and semiconductor crystals, are amon...

Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This...

A nanostructured metamaterial absorber composed of alternating semiconductor and dielectric layers is presented and numerically analyzed in this article. The development of a semiconductor adjustable absorber in the THz will open up new possibilities for quantum information science, imaging, health, and sensing applications, particularly those that...

We show that electron crystals compete closely with non-Abelian fractional Chern insulators in the half-full second moir\'e band of twisted bilayer MoTe$_2$. Depending on the twist angle and microscopic model, these crystals can have non-zero or zero Chern numbers. The latter relies on cancellation between contributions from the full first miniband...

Resumo No presente trabalho foram investigadas as propriedades elétricas da hexaferrita do tipo M BaFe12O19 (BaM) no regime de baixas temperaturas, algo novo na literatura deste material. A técnica utilizada foi a espectroscopia de impedância, sendo as medidas realizadas no intervalo de temperatura de 300 a 50 K, com a frequência do campo elétrico...

Traditional power devices packaging have been low package ratio, and difficult highly about the characteristic of the integrated, can't to adapt to the high integration and high density development trend in the semiconductor packaging industry; In this paper, a new design of Al wire cleaver face, can form a plane on the surface of Al wire or ribbon...

Understanding phonon behavior in semiconductors from a topological physics perspective offers opportunities to uncover extraordinary phenomena related to phonon transport and electron–phonon interactions. While various types of topological phonons have been reported in different crystalline solids, their microscopic origins remain quantitatively un...

The experimental and theoretical bandgap reported for stoichiometric V2O5, a layered semiconductor of great technological importance, spans a wide range of 1.7–4.8 eV. Using combined photoemission, absorption, and photoluminescence measurements, we show that the fundamental electronic gap of V2O5 is 1.85 eV, which is in close agreement with the val...

Aiming at exploring whether the Janus structure is beneficial to improving the thermoelectric (TE) performance, we systematically study the TE properties of the α-Se-monolayer-based Janus structures including α- SSe 2 and α- TeSe 2 monolayers. In comparison with the semiconducting α-Se monolayer, the Janus α- SSe 2 and α- TeSe 2 monolayers are stil...

Interband and intraband transitions are fundamental concepts in the study of electronic properties of materials, particularly semiconductors and nanomaterials. These transitions involve the movement of electrons between distinct energy states or bands within a material. In addition, charge mobility is also a critical parameter in materials science...

We investigate the flat band voltage (VFB) of silicon (Si) surfaces functionalized with methyl (Me), 9‐anthracene (Anth), 1,8‐anthracene (DiAnth; two attachment points), and 9‐bianthracene (BiAnth) on n‐type and p‐type Si substrates. Flat band potential (EFB, by Mott‐Schottky) provided VFB (or VBI) dependent on the contacted redox couple (ERedox)....

The field of semiconductor research is experiencing a paradigm shift as the boundaries of Moore’s Law are being approached [...]

Ultra-fast photoelectric conversion devices are a crucial element in photonics applications and are the subject of intense research and development. In conventional high-speed photo detectors, photoelectric charge generation in semiconductors is rooted in a mechanism that directly outputs current. Owing to the dilemma of the amount of generated cha...

Year by year, the demand for recycling energy is raising up. As a result, the usage of solar panels have been growing up. In this presentation, we will create model of solar photoelectric module with program MATLAB. We have started to program model of solar panels' main aspects and qualities of photovoltaic effects of progress modeling physics of s...

In this work, the patterns of changes in concentration, density of thermodynamic states, thermodynamic potential, entropy and heat capacity of electron gas under the influence of hydrostatic pressure and temperature were studied in nanowires in the form of a rectangular potential well, obtained on the basis of semiconductors with narrow bandgaps. T...

Recent advances in neural network‐based computing have enabled human‐like information processing in areas such as image classification and voice recognition. However, many neural networks run on conventional computers that operate at GHz clock frequency and consume considerable power compared to biological neural networks, such as human brains, whi...

The large variety of structures of Zintl phases are generally well understood since their anionic substructures follow bonding rules according to the valence concept. But there are also exceptions, which make the semiconductors especially interesting in terms of structure‐property relationships. Although several Na‐Sn‐Pnictides with a variety of st...

The spectral response of Ga2O3 almost perfectly covers the 200–280 nm solar-blind ultraviolet wavelength range, making it an ideal semiconductor material for fabricating solar-blind ultraviolet photodetectors. However, due to the considerably deep valence band energy of Ga2O3 the construction of heterojunctions typically induces a significant valen...