Science topic

Semiconductor Devices - Science topic

Explore the latest publications in Semiconductor Devices, and find Semiconductor Devices experts.
Filters
All publications are displayed by default. Use this filter to view only publications with full-texts.
Publications related to Semiconductor Devices (10,000)
Sorted by most recent
Book
Full-text available
The requirement of small, portable and cheap electronic equipment is increasing day by day. Consequently, new semiconductor devices are explored by the researchers incessantly to fulfill the consumer demand. This book will give an insight to the emerging semiconductor devices from their applications in electronic circuits which are the backbone of...
Article
Full-text available
In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a...
Article
Full-text available
As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and...
Article
Full-text available
The minimum spatial resolution of typical optical inspection systems used in the microelectronics industry is generally governed by the classical relations of Ernst Abbe. Kwon et al. show in a new Light: Science and Applications article that using an additional glass microsphere in the optical path can improve the resolution significantly. Artist’s...
Article
Full-text available
A voltage gain interleaved soft switched DC-DC Boost converter without auxiliary switch is proposed in this paper. Step-up characteristics are achieved without using any transformer, coupled inductor, voltage multiplier cell, switched inductor/switched capacitor in the proposed topology. All semiconductor devices operate under soft-switching condit...
Poster
Full-text available
Due to decreasing fossil resources and environmental friendliness, innovative methods in renewable energy generation and utilization are rapidly becoming attractive. Electrical drives and power electronics are one of the most critical components of modern applications of renewable energy systems. The robustness of machines and the increased efficie...
Article
Full-text available
Passivation of semiconductor surfaces is crucial to reduce carrier recombination losses and thereby enhance the device performance of solar cells and other semiconductor devices. Thin-film stacks of phosphorus oxide (POx) and aluminum oxide (Al2O3) have recently been shown to provide excellent passivation of semiconductor surfaces, including crysta...
Article
Full-text available
We propose and experimentally demonstrate a dual-mode silicon ring resonator which could process TE<sub>0</sub> and TE<sub>1</sub> modes simultaneously. By introducing subwavelength grating into the coupling region, compact footprint of ∼90 µm × 20 µm is achieved. The proposed device is fabricated on the standard silicon-on-insulator platform. The...
Conference Paper
Full-text available
Semiconductor devices are integrated from a limited number of fundamental building blocks. Important structures like ohmic contacts, band-to-band tunneling barriers or quantum wells are derived from metal-semiconductor interfaces, doping transitions or heterojunctions. Current injection across these material intersections is reduced due to a change...
Article
Full-text available
-High-quality electrical energy is the most needed thing for standard living. We use power electronics converters for the conversion of different forms of electrical energy and we use them for producing quality power output. We use semiconductor devices as switches in the process of conversion of DC-DC, AC-DC, AC-AC, and DC-AC according to the requ...
Article
Full-text available
The characterization of the carriers' multiplication factor is a key issue for the design of robust and reliable power semiconductor devices and for the assessment of their susceptibility to terrestrial cosmic radiation induced failures. A cryostatic setup is presented to extend the applicability of non-invasive charge spectroscopy techniques using...
Article
Full-text available
The design-rule shrinkage in semiconductor devices is a challenge at every step of the integration process. In the gap-fill process for isolation, the seam and void formation cannot be suppressed by using a deposition process, which even has excellent step coverage. To achieve seamless gap fill in the high-aspect-ratio structure, which has a non-id...
Article
Full-text available
Better electrical insulation and thermal management are both urgently required in integrated power semiconductors. Electrical insulation epoxy encapsulation suffers from poor heat conduction, which has increasingly become a bottleneck of power semiconductors integration. Although incorporating high thermal conductivity ceramic, such as hexagonal bo...
Article
Full-text available
The ever‐increasing power density is a major trend for electronics applications from dense computing to 5G/6G networks. Joule heating and resulting high temperature in the device channel due to the increased power density results in performance degradation and premature failure. Diamond integration near the hot spot can spread the heat by increasin...
Article
Full-text available
Cd and Co metal centered nicotinamide/nicotinic acid complexes were synthesized by chemical reactions. The complexes were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT‐IR), powder x‐ray diffractometer (P‐XRD), ultraviolet‐visible (UV‐Vis) spectrometer and scanning electron microscopy (SEM) with energ...
Article
Full-text available
Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for (100) Ga2O3. This is lower than the widely-used temperature of 470 °C for (010)-oriented Ga2O3. However, dras...
Article
Full-text available
There is currently a growing interest in efficient power generation and transformation without increasing the cost and complexity of a system. One type of transformation is the conversion of energy from a direct current to an alternating current, which is used in various applications, for example, in photovoltaic systems. One of the elementary comp...
Article
Full-text available
Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong band bending, an experiment that directly measures the contact resistance has not yet been demonstrated. In th...
Article
Full-text available
The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omnipresent in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we c...
Article
Full-text available
This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO3 and SiO dopants were chosen because their properties, including their insulating characteristics, make it...
Article
Full-text available
The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy γ-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of V o γ H 2 ) in the oxide layer seriously exacerbates the TID effect. Therefore, we developed a dynami...
Preprint
Full-text available
Scientists have perennially adopted “An analogy of the times.” Lieberman has described this procedure succinctly, “”Throughout history, the most complicated piece of current technology was often used as an analogy for the human body or brain. For example, in the eighteenth and nineteenth centuries the brain was often thought of as a clock or a time...
Preprint
Full-text available
The Electrolytic Theory of the Neuron replaces the chemical theory of the 20th Century. In doing so, it provides a framework for understanding the entire Neural System to a comprehensive and contiguous level not available previously. The Theory exposes the internal workings of the individual neurons to an unprecedented level of detail; including de...
Article
Full-text available
At present various oxide of metal semiconductors play a significant role in the field of electronics. Most of the semiconductor devices exploit the special characteristics of the junction between a p-type and n-type semiconductor. These devices can be made extremely small in size and they are incredibly fast in their response. Generally metal have...
Presentation
Full-text available
We review the origins, evolution and present status of MOSFETs, which has been the dominant semiconductor device in electronics applications for more than 4 decades. The conceptual invention of MOSFET, by Lilienfeld in 1928, and the end of World War II, in 1945, inspired Bell Labs to research into semiconductors. Bardeen and Brattain, who were work...
Preprint
Full-text available
Power loss estimation is an indispensable procedure to conduct lifetime prediction for power semiconductor device. The previous studies successfully perform steady-state power loss estimation for different applications, but which may be limited for the electric vehicles (EVs) with high dynamics. Based on two EV standard driving cycle profiles, this...
Article
Full-text available
Single-phase AC-AC converters with a direct power conversion approach are receiving rapid development as they have the ability to produce the regulated non-inverting and inverting form of the input voltage at the output. This feature enables them to correct the line voltage profile once they are used as dynamic voltage restorers if there is an issu...
Article
Full-text available
This paper investigates the effect of voltage sensors on the measurement of transient voltages for power semiconductors in a Double Pulse Test (DPT) environment. We adapt previously published models that were developed for current sensors and apply them to voltage sensors to evaluate their suitability for DPT applications. Similarities and differen...
Article
Full-text available
Ultrathin two‐dimensional (2D) semiconductor devices are considered with beyond‐silicon potential but are severely troubled by high Schottky barriers of metal‐semiconductor contacts, especially for p‐type semiconductors. Since the severe Fermi‐level pinning effect and the lack of conventional semimetals with high work functions, their Schottky hole...
Article
Full-text available
Compact and efficient power converter solutions are seen to be the backbone of future transportation systems in order to cope with the ongoing transition towards greener systems. Such systems usually comprise a main load section, in which one or more propulsion or traction motors are connected, in addition to an auxiliary load, which might comprise...
Preprint
Full-text available
Ultrawide bandgap gallium oxide (Ga2O3) is a promising material for power semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. Understanding the properties of point defects in Ga2O3 is necessary to realize better-performing devices. A comprehensive study based on density functional theory (DFT), using the generalized gradient...
Preprint
Full-text available
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking faults (1SSFs) fro...
Article
Full-text available
With the wide application of organic semiconductors (OSCs), researchers are now grappling with a new challenge: design and synthesize OSCs materials with specific functions to satisfy the requirements of high-performance semiconductor devices. Strain engineering is an effective method to improve the semiconductor material’s carrier mobility, which...
Article
Full-text available
In addition to electrical, optical, and magnetic fields, mechanical forces have demonstrated a strong ability to modulate semiconductor devices. With the rapid development of piezotronics and flexotronics, force regulation has been widely used in field‐effect transistors (FETs), human–machine interfaces, light‐emitting diodes (LEDs), solar cells, e...
Book
Full-text available
This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and...
Article
Full-text available
We study interactions between mechanical loads and distributions of charge carriers as well as current densities in the bending of a sandwich plate with a piezoelectric dielectric layer between two nonpiezoelectric semiconductor layers. A set of two-dimensional plate equations is derived from the underlying three-dimensional macroscopic theory of p...
Article
Full-text available
Real-time measurement of the thickness and group refractive index is crucial for semiconductor devices. In this paper, we proposed a fast synchronous method for measuring the thickness and group refractive index distribution of solid plates based on line-field dispersive interferometry. The proposed method measured the line-field distribution in an...
Article
Full-text available
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficienci...
Article
Full-text available
The performance improvement of advanced electronic packaging material is an important topic to meet the stringent demands of modern semiconductor devices. This paper studies the incorporation of nano-alumina powder and thermoplastic elastomer (TPE) into thermoplastic polystyrene matrix to tune the thermal and mechanical properties after injection m...
Article
Full-text available
The development of a high-voltage power semiconductor device puts forward higher requirements for its electrical insulation materials. In this paper, an epoxy/SiC nonlinear field-dependent conductivity (FDC) coating material was reported to relieve its thermo-mechanical stresses during device operation. It was exciting that the coating could improv...
Chapter
Full-text available
The article surveys the most recent achievements starting with the boron doping mechanism, mainly focused on doping in semiconductor materials such as Si, Ge, graphene, carbon nanotube, or other 2D materials. Frequently used doping methodologies are discussed, including ion implantation and solid-phase doping, mainly focused on recent developing te...
Article
Full-text available
In the field of materials research, scanning microwave microscopy imaging has already become a vital research tool due to its high sensitivity and nondestructive testing of samples. In this article, we review the main theoretical and fundamental components of microwave imaging, in addition to the wide range of applications of microwave imaging. Rat...
Article
Full-text available
Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, and doping-concentration data already reported in th...
Article
Full-text available
The article is devoted to the study of steady-state conditions of a distribution network containing a thyristor voltage regulator. The thyristor voltage regulator (TVR) is a new controlled semiconductor device developed at Nizhny Novgorod State Technical University n.a. R.E. Alekseev (NNSTU). The TVR allows the optimization of the parameters of 6–2...
Article
Full-text available
Organic semiconductors are disordered molecular solids, and as a result, their internal charge generation dynamics, charge transport dynamics, and ultimately, the performance of the optoelectronic devices they constitute, are governed by energetic disorder. This is particularly pertinent for emerging photovoltaic technology where the extractable po...
Article
Full-text available
In this paper, the structure and phase transition temperature of bulk silicate materials are studied by simulation method (SM) of molecular dynamics (MD). In this research, all samples are prepared on the same nanoscale material model with the atomic number of 3000 atoms, for which the SM of MD is performed with Beest-Kramer-van Santen and van Sant...
Article
Full-text available
This paper deals the hybridization of tunnel FET with the memristor for better execution of combinational and sequential circuits. Here, device structure of vertical tunnel FET and memristor are designed and their performance parameters are investigated. For transistor designing, we have introduced a 40 nm PIN Vertical Tunnel Field effect transisto...
Article
Full-text available
Voltage lift is a well‐known technique to improve the voltage gain of the converter. A combination of switched inductor and the conventional voltage lift technique can be used to achieve high gain, but the semiconductor's stress is still high. An improved voltage lift technique by employing an extra diode and capacitor and a switched inductor is pr...
Article
Full-text available
This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lower residual oxygen, coloration, and optical absor...
Article
Full-text available
A novel study on harmonic frequency combs emitted by quantum cascade lasers (QCLs) is presented here, demonstrating the presence of intensity correlations between twin modes characterizing the emission spectra. These originate from a four‐wave mixing process driven by the active medium's third‐order nonlinearity. The study of such correlations is e...
Article
Full-text available
Semiconductor device technology has greatly developed in complexity since discovering the bipolar transistor. In this work, we developed a computational pipeline to discover stable semiconductors by combining generative adversarial networks (GAN), classifiers, and high-throughput first-principles calculations. We used CubicGAN, a GAN-based algorith...
Article
Full-text available
The relentless scaling of semiconductor devices pushes the doping level far above the equilibrium solubility, yet the doped material must be sufficiently stable for subsequent device fabrication and operation. For example, in epitaxial silicon doped above the solubility of phosphorus, most phosphorus dopants are compensated by vacancies, and some o...
Article
Full-text available
This paper presents the effect of high energy irradiation expose on metal-semiconductor-metal (MSM) photodetectors device. High energy radiation may impact to lattice structure of semiconductor device. The most impact of radiation on MSM device had been studied base on polycrystalline silicon. Based on our research in SRFE process exposed on P-N po...
Article
Full-text available
Object detection is one of the most challenging tasks in computer vision. With the advances in semiconductor devices and chip technology, hardware accelerators have been widely used. Field-programmable gate arrays (FPGAs) are a highly flexible hardware platform that allows customized reconfiguration of the integrated circuit, which has the potentia...
Preprint
Full-text available
Directed self-assembly (DSA) of block-copolymers (BCPs) is one of the most promising developments in the cost-effective production of nanoscale devices. The process makes use of the natural tendency for BCP mixtures to form nanoscale structures upon phase separation. The phase separation can be directed through the use of chemically patterned subst...
Preprint
Full-text available
This Chapter introduces the three-terminal Neuron based on “The Electrolytic Theory of the Neuron.” It overcomes the many short-comings of two-terminal neuron based on the chemical theory of the neuron; specifically, it provides a differential input structure that provides new interpretations of old signal processing concepts. The Electrolytic Theo...
Article
Full-text available
Common Mode Voltage (CMV) reduction in a traditional H6 (six switch) 3- inverter usually demands additional power semiconductors to avoid poor harmonic performance. However, apart from tending to the CMV related issues, these extra switches do not add any other capability to the inverter. To address this limitation, in this paper a novel H8 invert...
Conference Paper
Full-text available
Abstrak Pembelajaran Berasaskan Masalah (PBM) dilaksanakan dalam bidang pendidikan sejak tahun 1980-an dan merupakan satu kaedah pembelajaran berpusatkan pelajar yang semakin diberi perhatian kini dan ia menjurus kepada Pembelajaran Berasaskan Hasil (Outcome Based Education). Dunia pendidikan khususnya pendidikan Technical and Vocational Education...
Preprint
Full-text available
Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is promising to address such a challenge. We demo...