Nanowires - Science topic

You are right — ZnO is rarely used in MEMS actuators because of its relatively high electrical conductivity, especially compared to materials like AlN or PZT.

Higher conductivity in ZnO leads to leakage currents, which degrade the piezoelectric actuation performance (inverse effect).

Also, ZnO tends to be less stable in humid environments, causing degradation over time, while MEMS devices often require long-term reliability.

AlN and PZT offer higher piezoelectric coefficients (PZT) or better stability and process compatibility (AlN) for MEMS fabrication.

As for ZnO nanowires:

They are excellent for energy harvesting (direct piezoelectric effect) because they can generate voltage under mechanical deformation.

However, for inverse piezoelectric applications (actuation), the conductivity, mechanical softness, and difficulty in creating dense aligned arrays limit their practical use.

Thanks a lot

Brilliant Prabowo Thank you for the answer

Dear friend Aayushi R Raut

Ah, the world of graphene nanostructures, where engineering meets marvel. When it comes to high electrical conductivity, one standout is graphene nanoribbons. These structures, with their narrow width and long length, facilitate exceptional electron mobility, making them a top choice for applications demanding superior conductivity. So, if you're seeking top-tier electrical performance, graphene nanoribbons are the way to go.

An interesting article to read is:

Hello,

your TIF files contain some information in tag 270 (see below).

(To read the tags you can use the ImageJ plugin here:

http://rsbweb.nih.gov/ij/plugins/tiff-tags.html)

It seems the calibration data are identical for both images:

XpixCal=233.059 YpixCal=233.059 Unit=A (The unit should read 1/A).

Using this information you can try to figure out the calibration in both images and see if the results for Al fit the published patterns for Al.

AlStandard_005_D.txt

TagNo (Tag Name) (Count TYPE ) Value

======================================================================

270 (ImageDescription) ( 108 ASCII ) I.M.A.G.E. 10/28/10 9:31 0.1 51 60 HC-DIFF 12.8 -15.2 -0. XpixCal=233.059 YpixCal=233.059 Unit=A ##fv3

Nanowire.txt

TagNo (Tag Name) (Count TYPE ) Value

======================================================================

270 (ImageDescription) ( 112 ASCII ) I.M.A.G.E. 10/27/10 11:55 0.1 51 60 HC-DIFF 748.7 333.4 -0. XpixCal=233.059 YpixCal=233.059 Unit=A ##fv3

Let me know what source you are planning to use and how to set up the grid. Usually a uniform plane wave illuminates small periodic objects, the intensity on the object's surface will be uneven. There can be anything that disturbs the plane wave nature, for example, inhomogeneous materials will cause wavefront distortion.

I suggest reviewing the following paper:

Confinement in nanowires leads to quantum size effects, causing the energy levels to become quantized. As the diameter of the nanowire decreases, the available energy states become quantized, leading to an increase in the bandgap. This is because the confinement restricts the motion of electrons and holes, causing their energy levels to become discrete. The increase in bandgap is a result of the quantization of energy levels, which in turn affects the electronic properties and optical characteristics of nanowires.

Yes, absolutely. Confinement occurs when the dimensions of the nanowire (esp. its radius) are reduced to ~10 nm, restricting the motion of electrons and holes to dimensions that are on the order of their de Broglie wavelength.

Regarding electronic phenomena, this can have implications on the band gap, and carrier mobility. Pragmatically, enhanced sensitivity in devices is a useful feature that can be exploited from these effects.

If the broad peak observed in the XRD pattern does not arise from impurities but instead signifies a lower product quality, several solutions can be pursued:

Hi Ajai;

I can recommend products of my company Mechion. You can purchase every separate module you need for your electrospinning research. Don't hesitate to get in touch with sales@mechionlab.net.

The growth direction of nanowires on a substrate is a complex phenomenon influenced by many factors, such as lattice matching between the nanowire material and substrate, surface energy, epitaxial strain, growth conditions, and more. It's challenging to provide a definitive explanation without specific details about the growing conditions and methods, but I can provide some general insights that might help.

In your case, with iron (Fe) nanowires growing on a strontium titanate (SrTiO3) substrate, it's plausible that the nanowires preferentially grow perpendicularly due to a combination of factors, which could indeed include interfacial energy.

In your specific case, you might need to consider the detailed experimental conditions and materials' properties to get more insight into why the Fe nanowires are growing perpendicularly. Collaborating with a materials scientist or physicist specializing in nanowire growth could be valuable to understand the exact reasons behind the observed growth direction.

Thank you for your help can you please share with my the link that you used for this information as you know in the assignment I have to cite the name of author's and the date . One more things If you have another information about the topic please share Kaushik Shandilya

I think it is Yes, there is a chance that a shell-like structure could form over the V2O5 nanowire if you disperse it in the Mo-doped V2O5 precursor solution and do a hydrothermal reaction. The formation of the shell-like structure will depend on various factors such as the concentration of the precursor solution, reaction temperature, and time. If the conditions are favorable, the Mo-doped V2O5 could nucleate and grow around the V2O5 nanowire, forming a shell-like structure.

The possibility is that the Mo-doped V2O5 could form microspheres and stick to the surface of the V2O5 nanowire instead of forming a shell-like structure will be potential. This could happen if the concentration of the precursor solution is too high, or if the reaction temperature and time are not optimized for the formation of the shell-like structure.

In summary, it is possible to form a core-shell structure with a V2O5 nanowire as the core and Mo-doped V2O5 as the shell by dispersing the V2O5 nanowire in the Mo-doped V2O5 precursor solution and doing a hydrothermal reaction. However, the conditions need to be optimized to ensure the formation of the desired shell-like structure.

Hi Faris,

Yes, you can. But is more expensive than typical TCOs.

If the sensing depends upon the surface area then chose such morphology which has more surface area.

Best wishes

@Dmitry Milovzorov

Thank you for your help.

I applied different voltages, but each time the absorption peak corresponding to silver nanoparticles gradually decreased with increasing voltage and increasing time.

Electronic measurements of entropy in meso- and nanoscale systems

Once you make nanowires, you should keep in a solvent, never leave the solid state. It is impossible to redisperse the solid aggregated nanowires as your original nanowires formed.

Dear Kayode Babagbale,

Francisco Jose Cabrera España

Respected Sir,

Thankyou so much sir for your valuable time and help. I will have a look at it

Hello Bert,

many thanks for sharing this very interesting technical question with the RG community. Personally I'm not a proven expert in this field. However, my suggestion would be to avoid buying the copper nanowires from commercial suppliers because you never really know how pure and homogeneous they are. It is quite seasy to prepare copper wires following the straightforward protocol described in the following useful literature reference:

Luckily this paper has been posted by the authors as public full text on RG so that you can download it as pdf file. In this article not only a simple synthesis of copper nanowires is described in detail, but also the reparation of flexible transparent electrodes.

I hope this helps. Good luck with your work!

Cellulose nano-fillers are biodegradable, light weight and recyclables. They exhibit exceptional mechanical, optical and barrier properties and these properties made them to be used in food packaging applications

Pierluigi Traverso Leshan Usgodaarachchi Thank you for your kindly suggestions!!

yes this Understanding the tensile behaviors of ultra-thin ZnO nanowi

Dear Assa Aravindh ,

Recently I recalculated the ELF for the same system with NCORE = 4 tag in INCAR file, this time I didn't get any unwanted electron densities in the unit cell. So you can try with this tag (NCORE = 4) and confirm it.

Best wishes,

Subhadeep

Hi there,

We provide researchers with low-cost mild- and hard- anodized AAO templates, having different pore lengths and diameters. Contact: amirh.montazer@gmail.com

We provide researchers with low-cost mild- and hard- anodized AAO templates, having different pore lengths and diameters. Contact: amirh.montazer@gmail.com

There are multiple ways to decorate the nanowires, the most easily and accesible method is in-situ decoaration of nanorods. Kindly look for the literature related to q-dots decoration of nanorods.

Hi Ritik,

Recently, we performed creep and stress relaxation tests on collagen fibrils (diameter ~100 nm and length ~30 μm), using MEMS devices, a real time edge detection algorithm, and a closed-loop PID controller. The work can be found in the following link:

We also performed cyclic loading of collagen fibrils with similar dimensions:

Additionally, work on fatigue and creep of metal nanowires from other groups can be found in the following articles:

The diameter of your nanowires are an order of magnitude smaller, and therefore, will be harder to manipulate. However, MEMS based techniques with feedback control is definitely a way to perform these tests.

It will be easier If you provide the error code. There are various reasons for a Code not to respond as expected.

for the Temperature try using temp### in the model section

Hopefully, it will help.

Dear Asep Bustanil Aripin I fully agree with the previous answers in that silver provides the best conductivity. In this context please have a look at the following potentially useful article which month help you in your analysis:

Fortunately the paper has been posted as public full text on RG. Thus you can freely download it as pdf file.

Good luck with your work!

Sir i have tried to run the code regarding the tfet nanowire in Silvaco Example section.

But for some reason when I was changing the Temperature, the threshold voltage is not changing. it has been stuck to a particular value 0.69....

the code that i am using for extracting the threshold voltage is

extract name="vt" x.val from curve ((v."GATE"),log10(abs(i."DRAIN"))) where y.val=-7

can you please tell me if i am using the correct equation?

Sir i have tried to run the code regarding the tfet nanowire in Silvaco Example section.

But for some reason when I was changing the Temperature, the threshold voltage is not changing. it has been stuck to a particular value 0.69....

the code that i am using for extracting the threshold voltage is

extract name="vt" x.val from curve ((v."GATE"),log10(abs(i."DRAIN"))) where y.val=-7

can you please tell me if i am using the correct equation?

This article might be useful

Dear Francisco Manuel Marquez ,

welcome,

I propose that you can use a scaffold of TiO2 or you can produce a porous surface at a Silicon substrate and then deposit on a thin film of Sn. This will have the same effect of nanowires. In the end effect it will enlarge the contact surface with the electrolyte.

Best wishes

Dear Sunny,

Dear Shivansh Awasthi ,

Please the display the waveform of the time domain. and then display the the FFT which you get. In this way one can put a specific reply.

The DC component is the average value of the waveform.

It will be seen as a discrete value at the zero frequency.

Best wishes

However, in clay composites, the heterogenicity is more and likely less compatibility with the matrix materials. This causes agglomerations which act as impurity and thus cause failure.

In such an electromagnetic radiation nanowire detector device, use Sentaurus ATLAS with a suitable photonic module like Blaze

Tin powder is manufactured usually by gas atomization. Also it can be done by the ultrasonic atomization like ATO Plus from 3D Lab.

http://additiveplus.com/ato/

Shahid Ali Thank you for your detailed answer to my question. Much appreciated.

The “Self-heating effect” Self-heating refers to the thermal energy originating at a current-carrying element. The local temperature rise depends upon the thermal dissipation path(s) away from the element

The self-heating error is usually determined with Equation 4 by calculation of R0(t). The zero current resistance value is calculated by extrapolating, to zero current, resistance values measured with different electrical currents in the sensing element, with the thermometer at a stable temperature.

Dear Zhou Qian thanks for asking this very interesting technical question. According to some leading references in this field, both ZnO nanowires and nanorods can be employed for the fabrication of ultraviolet (UV) photosensors. For example, please have a look at the following highly useful articles:

This paper has been posted as public full rext on RG and can be freely downloaded as pdf file.

and

These papers have been published Open Access and are also freely available as public full texts (see attached pdf's).

Good luck with your research and best wishes, Frank Edelmann

The structural and optical properties of ZnO nanorods are investigated as a function of growth temperature of the seed layer. The seed layer comprising of ZnO nanocrystallites is grown on ITO substrates at five different temperatures (150–550 °C) and the nanorods are grown on the seed layer by the facile hydrothermal method. The seed layer grown at 350 °C is observed to be uniformly textured with c-axis orientation leading to the synthesis of vertically aligned nanorods with smaller diameter. The HR-TEM analysis and the intense peak along (002) direction in the XRD spectra of this sample implied that the nanorods possess c-axis orientation. An enhanced UV emission is also observed in the photoluminescence spectra of this sample. The diversity in the morphology and orientation of the seeds at different temperatures has been explained by the growth kinetics of the ZnO nanocrystallites.

Agreed with Hadi Jabbar Alagealy sir.

Xuan Wu , you may want to review the following:

Dear Ashish Thakur,

It's probably due to the

1. high surface to volume ratio offered by nanowire FET sensors

2. size compatibility of the biomolecules and nanowire FET sensors

For nanowire electronic devices for cell network mapping and brain mapping, you can follow the links below

1.

2. https://www.pnas.org/content/107/5/1882

3. https://www.pnas.org/content/107/10/4489

Pallavi Rana The Williamson-Hall Plot. W-H plot is used to calculate the crystallite size and microstrain from complex XRD data. That's when both the crystallite size and microstrain vary as a function of the Bragg's angle, we can only calculate these parameters from XRD data using W-H plot. I have provided the practice file (Origin file) as well as the calculation file (Excel file) in the video description. Thanks

Dear Anming Hu,

These publications mentioned the applications of single nanowire devices

1.https://pubs.acs.org/doi/abs/10.1021/acsami.8b19410#:~:text=Abstract,connections%20in%20a%20scalable%20fashion.

2.

3. https://ieeexplore.ieee.org/document/7066814

4.

Dear Saif Ahmed,

if you have access to it, Comsol should be able to offer you tools to simulate the optical properties of nanowires.

Best regards.

Dear Tasnim Kamal Mouri,

Please check the answers below

· Diameter ≤ 100 nm

· Aspect Ratio >1000

· 1000 times longer than its diameter

Further Readings:

1. https://www.azonano.com/article.aspx?ArticleID=1735

2. https://www.nature.com/subjects/nanowires

· Width: 1-100 nm

· Aspect Ratio: 3-5

· Typical Length: 10-120 nm

Further Readings:

1. https://www.intechopen.com/books/nanorods-and-nanocomposites/nanomaterials-an-overview-of-nanorods-synthesis-and-optimization

2. https://www.sciencedirect.com/topics/engineering/nanorods

3.https://www.sciencedirect.com/topics/engineering/nanorods#:~:text=Nanorods%20(NRs)%20are%20the%20materials,aspect%20ratios%20to%20separate%20them.

· Width < 100 nm

· Length < 1 µm

Further Readings:

1. https://www.sciencedirect.com/topics/materials-science/nanoribbons#:~:text=The%20nanoribbons%20obtained%20by%20these,that%20affects%20the%20electronic%20properties.

2. https://aip.scitation.org/doi/10.1063/1.4966963

3. https://www.ucl.ac.uk/mathematical-physical-sciences/news/2019/apr/wonder-material-individual-2d-phosphorene-nanoribbons-made-first-time

4. https://en.wikipedia.org/wiki/Graphene_nanoribbon

Dear Indrajit Mondal,

You should consider some surfants to add into your dispersed solutions either using water as a solvent or ethanol to make homogenous and stable solutions.

Dear Muhammad Usman Khalid ,

Hope you are well.

The doping affects the morphology of deposited film as it can affect the process of seed formation and the further growth of the seeds. Most probably is that it enhances the seeding process and therefore the crystallographic structure will be in form of grains. To form fibers one must reduce the tendency to seed formation.

This will lead to smaller number of seeds and their subsequent growth inform of wires.

So, the pictures shows that the presence of impurities will enhance the formation of seeds and retard their further growth as a wire.

You study further the effect of varying the doping concentration on morphology.

I do no how much is your doping concertation.

If my interpretation is valid you may find a change in the density of the wires with concentration.

Best wishes

And https://link.springer.com/article/10.1007/s12668-019-00708-x

check the IV

The pA level current indicates you may have a poor conductivity somewhere between your working electrode lead and the electrolyte. Most likely it is related to the template you are using. If this is AAO film on Al, then the barrier layer would contribute to high resistance. For free-standing AAO with pores open on both sides, poor contact to the pore bottoms could be due a number of reasons. If you could share more information on the template, I'd be glad to follow up with additional comments.

Dear Madhukar Baburao Deshmukh,

Thanks for the insight. But I actually try to use the hydrothermal method which excels in terms of simplicity and low-cost method. Is it possible to grow ZnO nanowire in a substrate without any ZnO seed at all and using Au Nano-particle instead?@

Dear Anafi Nuraini , may be the following paper could help you. In this case the authors used a nanoporous alumina template to obtain 60:40% platinum-iridium alloy nanowires of about 200nm diameter and controllable length (it will depend on the depth of alumina pores). As seed layer they deposited Ti/Au thin films by sputtering. I know it is not exactly what you was asking for, but may be you can adapt the method to your experiments.

May be another option would be to deposit some seed nanoparticles, say Ti/Au like in this case, or may be replicating the first stage of your Pd deposition, and then shifting to an Ir salt, probably if you obtain some kind of distribution of NP´s on your HOPG, Ir could grown from them up, forming the Nanowires instead of thin layer.

Hope it helps.

Dear Sambuddha Majumder ,

The concept of the stacking of the solar cell layers is that the top layer facing the solar radiation is the window layer with the higher energy gap while the bottom layer is major absorber layer having the lower bandgap.

Accordingly, the outer laying facing the sun must be of higher energy gap while the core is the lower bandgap.

Best wishes

Dear all, additional information may be found at the following links and the attached files. My Regards

https://www.researchgate.net/post/What_is_the_correct_volume_of_HAuCl4_solution_and_trisodium_citrate_solution_for_the_preparation_of_gold_nanoparticles_in_these_papers#:~:text=Just%20before%20your%20experiment%20prepare,into%2020%20ml%20of%20water.

It's depend on ion energy and ion current density. If you have a few keV ions with high enough ion fluence you should observe the ion sputtering effect - removing of atoms from the surface of the wires. The sputter yield of ZnO is quit high and can reach 10 atoms per ion. You can use SRIM for simulation of the sputter yield for your experimental conditions (www.srim.org).

Brilliant!

Thank you and Atef F. Qasrawi

Dear Rohit Nimje

welcome!

This question is very generic and to answer it one needs to study all other substrate materials for FETS.

I think from the principle point of view there is no universal material that can be used to produce all field effect transistors. It is so there is no ideal material but their are alternative materials which can be used as substrate with one or more merits than the others.

One can answer this question by determining the most appropriate material properties and the material which satisfy the most requested properties will be

most suitable one.

The properties of the substrate materials:

- High mobility of electrons or holes

- High field effect sensitivity for field effect conduction control

The material must be easy to accumulate with majority carriers, or deplete or inverse.

- Low interface states with the oxide or the insulating material of the MOS or the MIS capacitor.

- Low static charges at the interface

- Builds ohmic contacts with the source and drain metallic electrodes.

- In junction less MOSFETS which i think you intend here the substrate material must be semi insulating to affect very low off current. Then by the field effect its carrier concentration will easily modified by bate electric field.

- The material must be stable

- The material must be easily fabricated

- It must be easily available.

-It must be reproducible

I think the nanosheet will be materials with the more merits.

It is also suitable for large area display applications and or flexible electronics.

Best wishes

Alexander Frolov:

Сам я не занимаюсь подобными структурами, но знаю, что есть исследователи, которые создают металлические нанопровода различного состава в матрицах Al и различных полимеров. Т.е. это не столбчатые структуры на поверхности пластины, а прорастающие внутрь матрицы. Они могут быть как сплошными, так и полыми - в виде нанотрубок, в т.ч. и многослойными или многослойными по длине. Размеры могут быть более кв. см.

Также известны работы, где на поверхности подложки выращен лес углеродных нанотрубок вроде показанных на ваших снимках полупроводниковых структур. Думаю, что существуют коммерческие предложения по их продаже.

Если говорить о проводах, то работы по ним, в которых мне приходится участвовать, связаны с микропроводами в стеклянной оболочке или без оной. Соответствующие публикации можно найти в моем профиле. Однако мы их не используем в виде структур, выстроенных перпендикулярно пластине.

Поэтому не думаю, что смогу быть вам чем-н. еще полезен и откликнулся лишь с целью сподвигнуть Вас на более развернутое пояснение для аудитории RG Ваших потребностей.

I always prefer to use just the real part. The notion of a complex-valued permittivity is only really valid in a CW regime, but even then is merely a calculational convenience rather than an accurate model of the physics. The underlying physics, of course, might be modelled as e.g. a Drude model or Lorentz oscillator, which is an explicitly time-dependent response.

An imaginary part of the permittivity (or similarly the permeability) follows from the EM fields driving microscopic currents or atomic states , and it is the loss in these currents (or states) that means that their back-action of on the EM fields is reduced. Thus the "imaginary part" notion is removed from even simple models of material response in two important respects: it is implicitly frequency domain rather than time domain, and it is unrelated to any actual microscopic physics.

See also (arxiv & PRA versions)

Dear Robb Engle

Thanks for your recommendation.It seems like that it's not what I want,but I am so happy that you are willing to spend your valuable time finding this paper.If you need some help oneday,please tell me!

ear DDzetty soraya abdul aziz

The colleagues brought some explanations of the metal semiconductor contacts.

When you form metal -ZnO contact only by bringing the metal to the top of the nanowire are you sure that they are intimately atom to atom contacted?

It is the device construction method that brings such big difference. You must build a real M-S contact on the atomic level. I think in your device you still have only very small contacted area compared to the whole area of the cross section of the nano wire. I would advise you to estimate the current density. Then you plot the current density versus the voltage. You can measure the capacitance of the device it will give you an estimation about the contact area with in fact much smaller than real cross section of the wire.

The barrier height can never be 10 times the theoretical value calculated from the energy level diagram.

The changes in the barrier height is caused by the interface sates or the inclusion of some insulating thin layers between metal and the semicondcutor.

Best wishes

Doufnoune RACHIDA Rachida

Thank you for taking the time and replying to my message. Also, I am grateful for the documents you shared.

I think these attachments will be very useful for you

Dear Smruti,

welcome!

Hope you are well!

HF does not dissolve silicon. It dissolves silicon dioxide.

So it could etch the SiO2 on the wire if it is coated with SiO2.

If it is pure silicon it will not be affected by HF.

Best wishes

Dear Smruti,

Welcome,

Hope you are well!

Thank you for inviting me to reply this question.

You have to repeat this experiment to be sure that your results are reliable.

I think the difference in the three cases may be due to the size of the nanowires.

As the size increases the Bandgap decreases.

But one has to verify this hypnosis by measuring the thickness of the wires.

Other effect may be due to the passivation of the surface states.

This leads to the reduction of the electronic states in the bandgap which leads to reducing the bandgap.

Please advice you to read in the energy band structure of fine grained and amorphous silicon.

Best wishes

Hi Kamal,

It is tough to conclude anything important without seeing the actual spectra. If you attach the spectra here, that would be better to conclude something important. But remember, you are using 532 nm laser, which is not good for collecting publishable Raman spectra of the CsPbBr3 samples that give fluorescence at this excitation wavelength.

Best,

Aslam