I-V - Science method

Actually, I am interested to check the ferroelectric behavior of my non-conducting polymer composite film. Since the electrical resistance is high, how to study the voltage variation with respect to applied current? The freestanding films are of the thickness 300 micrometer.

I would like to design a substrate holder with a 2-probe setup for measuring the I-V characteristics of thin films, including photodiodes, photodetectors, and other devices. Commercially available instruments for such measurements are often expensive, making them inefficient for my budget-specific requirements. Therefore, I want to design one myself. Please help me with this.

I am attempting to calculate the vertical carrier mobility through a semiconductor powder sample coated on FTO using Spin Coating method. The I-V results I recorded using SMU 2401, shows current saturation at very low voltage like 0.3V, 0.4V etc. From Literature I found the saturation Value to be more than 2V. What could be the reason of showing this much low current saturation in my sample. I want know the possible reasons behind such result. whether the device is short? or any other reasons? I am attaching the images of (a) the configuration I chose for coating and I-V measurements (b) Corresponding I-V Graph of my sample (c) reference I-V plot taken from literature .

what is the S shaped I-V curve of solar cell?

i'm processing a MIM capacitance with 50nm TiN/20nm HfO2/50nm TiN, but when i apply cv test to the capacitance it won't show a normal curve, only a line about 100fF, which is far below the theoritical capacitance(about 50pF). but the I-V curve shows that the current is always below 1nA before a clearly breakdown at about 9V. After that i apply Cp-D mode and Cs-Rs mode to the capacitance, and the D(dissipation factor) is about 3 and Rs is about 100kohm(huge!). How is this coming? I'm really confused! Is this show the electrode (TiN) has a really high resistance? How can I improve that?

How to calculate Rsh and Rs using the manufacturer's datasheet and if the I-V curves are not provided? I am unable to find the slope as i do not have enough values.

I want to take measurements for the I-V characteristic in resistivity calculation of metal oxide thin films. Can I do this using a potentiostat, especially in a solution-free environment, with two electrode connections? If possible, which technique should be used (for example, pulse voltametry, etc.). Thanks in advance.

It is common to get resistance value from the I-V curve generated by two-point probe. However, if the two points are taken on the surface of the thin film layer, how can I get the resistivity? According to the resistivity formula expressed with resistance, the area is required. However, in this case, what is the 'area'?

I have conducted research on impedance-based humidity sensors and utilized electrochemical impedance spectroscopy (EIS) to understand their mechanism. However, I have noticed that various research articles utilize a perturbation voltage amplitude ranging from 0.5 V to 1 V in measurement and EIS. I seek clarification on the rationale behind using high voltage for impedance measurement. Kindly provide guidance on this matter."

Extracting the data from the plot and the equation.

I am trying to simulate the PV module model with varying irradiation (after considering the beam, diffuse and reflected). I have modeled the the PV module using the mathematical equations in Simulink and managed to get the P-V & I-V curves for constant values. But I get error when I input a signal. If anyone know how do this to kindly assist.

I need to do an experiment in which I solder a resistor to the backsides of two series-connected cells of a commercial PV module, to simulate shunt resistance, then measure the I-V curve of the module at various shunt resistance levels for that one cell. Once I open the poly backsheet, how can I remove the encapsulant from an area of the cell backside, large enough to solder a wire? I can probably scrape most of the encapsulant away, but getting down to the clean metallization will be the challenge.

Thanks

Photonpal

How to describe the noise rounding in the I-V data or HTS Josephson junction of micron dimensions at a temperature close to its critical temperature? How could we justify the Resistively shunted junction (RSJ) model in the rounding part of the experimental data?

Hello all,

I'm simulating a field-plated-GaN-HEMT device. The IdVd characteristics obtained are fine for lower drain voltages. However, for higher drain voltages, the device doesn't enter breakdown. The I-V characteristic continues linearly for drain voltages till infinity.

I have included all models essential for breakdown analysis such as impact selb, field-dependent mobility model (fldmob), fermi and srh.

Further, I am using gummel method for low voltages(<2V), newton method for medium range voltages (2V-50V) and block method for high voltage analysis (50V-2000V). By doing so, I am not getting any convergence or trap errors- but I am not getting proper voltage breakdown either.

Apart from simple ramp voltage variation, I am also using current boundary conditions and compliance parameters. What can I add or change such that breakdown is analysed properly in my device? (breakdown analysis similar to ganfetex02)

Any help is appreciated.

Cheers.

Hello,

I want to make STM break junction experiment using Gold. So, my setup is made up by a gold tip and a substrate of Gold/SiO2/Si stack lying on a nanopositioner. The substrate is brought in contact with the tip to form gold atomic contacts that can be monitored using I-V curves. So I have to apply a voltage on the substrate. We do this at room temperature

However, the only way I could come up with was to solder a small wire on the substrate. But this method degrades the substrate as it has to be really pure and clean. Also, we have to use a flame to clean it so it will spread the solder everywhere. I tried with several mechanical ways to contact a wire on the substrate but it is hard to form a good connection. Do you know some ways to create a good contact, that would allows us to easily remove the susbtrate and not contaminate it ?

Using MATLAB I first simulated a solar cell and plotted I-V graph, V-T graph and I-T graph. Then I connected 36 simulated solar cells in series and created a solar module in MATLAB. Then I plotted all the above graphs for each cell. The graphs for each cell is same as for one single solar cell when 'insolation' for each cell is equal like 1000Wm^-2 insolation for every cell. But when the insolation varies over one cell to another then the graphs for each cell is showing different pattern. I am now confused whether my graphs are ok or not. I am providing a PDF file to understand my work better. Help me someone please.

I am in search of a low cost, widely used and widely accepted characterization method/test to determine I-V (current-voltage) characteristics of semiconducting thin films. Thank you.

The behavior of (I-V) curve of some Cds sensors takes Ohmic (linear) behavior and schottky behavior, I need to explain when the Ohmic and schottky behavior of sensors appears?

I have fabricated MESFET by depositing GeSe thin film on glass substrate and then deposited silver metal for gate. Now when I record I-V between source and drain at 0 gate voltage it passes from origin, but as I increase of decrease the gate voltage then I-V does not pass from origin, instead I get 0 current when the voltage between source and drain reaches the value of gate voltage. i.e. if I apply gate voltage of 5V then the current value is 0 at drain voltage 5V, if gate voltage is -5V then the current value is 0 at drain voltage -5V.

Can anyone suggest the reason for such behaviour or any literature explaining such behaviour.

Thank you in anticipation.

Regards,

Chaitanya.

Hello,

I want to get a MATLAB code for External Quantum Efficiency (EQE) for solar cells as well as I-V and P-V electrical characteristics.

This will allow me to make an electrical and optical comparison on the coating of anti-reflective layers with GaSb as a substrate.

Hello, I am working with PEMFC, simulation by Ansys Fluent. I simulate a model and it works well, convergence, and gives a good I-V curve. When I change the morphology of flow field only, keep the same boundary conditions, good meshing (I think so), V_cell 0.65, the model was not converged in the simulation. After around 1000 iterations, the current density reached a certain value and then the cell diverged right after that. at this point, I check the H2O contour and temperature contour, images showed that there's no reactions at anode and cathode, although O2 and H2 are plenty in these flow fields. Can anyone explain that and tell me the influence of flow rate (anode and cathode) on current density and the convergence of the cell. (stoichiometry of 1 at all cases).

Thank you so much

# (c) Silvaco Inc., 2015

# CREATE SOLAR CELL IN ATHENA

go atlas simflags="-P 1"

mesh width=1e12

x.mesh loc=0.00 spac=0.5

x.mesh loc=1.00 spac=0.5

y.mesh loc=0.00 spac=0.05

y.mesh loc=12.0 spac=0.05

y.mesh loc=37.0 spac=0.05

#Region

region number=1 x.min=0 x.max=1 y.min=0.1 y.max=18 user.material=TiO2&Dye

region number=2 x.min=0 x.max=1 y.min=18 y.max=36.9 user.material=Electrolyte

#Electrode #1=anode #2=cathode#

electrode name=anode number=1 x.min=0 x.max=1 y.min=0 y.max=0.1

electrode name=cathode number=2 x.min=0 x.max=1 y.min=36.9 y.max=37

#Doping

doping uniform conc=1e+9 p.type x.left=0 x.right=1 y.top=0.1 y.bottom=18 direction=y

#doping uniform conc=1e+12 n.type x.left=0 x.right=1 y.top=18 y.bottom=36.9 direction=y

material material=TiO2&Dye user.default=Silicon user.group=Semiconductor

material material=Electrolyte user.default=Silicon user.group=Semiconductor

material material=TiO2&Dye permi=50 affinity=4.0 eg300=1.5 nc300=2.8e19 nv300=1.9e19

material material=Electrolyte permi=3.5 affinity=3.4 eg300=0.93 nc300=2.8e19 nv300=1.9e19

material material=TiO2&Dye sopra=Tio2.nk

material material=Electrolyte sopra=Lif.nk

material material=Electrolyte qe.exciton=1.0

material material=Electrolyte knrs.exciton=1.82694e6 lds.exciton=0.0 taus.exciton=1.0e20 rst.exciton=1.0

material material=Electrolyte a.singlet=2 s.binding=0.004

material material=TiO2&Dye mun=0.3 mup=3e-4

material material=Electrolyte mun=7.07e-2 mup=7.07e-2

contact name=anode workfunction=4.4

contact name=cathode workfunction=4.4

structure outf=solarex01_0.str

# FIRST ATLAS RUN TO FIND SHORT CIRCUIT CURRENT AND OPEN CIRCUIT VOLTAGE

go atlas

mesh infile=solarex01_0.str

# set contact material to be opaque

material material=Aluminum imag.index=1000

material material=TiO2&Dye user.default=Silicon user.group=Semiconductor

material material=Electrolyte user.default=Silicon user.group=Semiconductor

material material=TiO2&Dye permi=50 affinity=4.0 eg300=1.5 nc300=2.8e19 nv300=1.9e19

material material=Electrolyte permi=3.5 affinity=3.4 eg300=0.93 nc300=2.8e19 nv300=1.9e19

material material=TiO2&Dye sopra=Tio2.nk

material material=Electrolyte sopra=Lif.nk

material material=Electrolyte qe.exciton=1.0

material material=Electrolyte knrs.exciton=1.82694e6 lds.exciton=0.0 taus.exciton=1.0e20 rst.exciton=1.0

material material=Electrolyte a.singlet=2 s.binding=0.004

material material=TiO2&Dye mun=0.3 mup=3e-4

material material=Electrolyte mun=7.07e-2 mup=7.07e-2

material material=TiO2&Dye taun0=1e-6 taup0=1e-6

material material=Electrolyte taun0=1e-6 taup0=1e-6

# set light beam using solar spectrum from external file

beam num=1 x.origin=10.0 y.origin=-2.0 angle=90.0 power.file=solarex01.spec

# saves optical intensity to solution files

output opt.int

models conmob fldmob consrh print

solve init

solve previous

# get short circuit current

log outf=solarex01_0.log

solve b1=1

extract name="short_circuit_current" max(abs(i."cathode"))

save outf=solarex01_1.str

# get open circuit voltage

solve init

solve previous

contact name=cathode current

solve icathode=0 b1=1

extract name="open_circuit_voltage" max(abs(vint."cathode"))

save outf=solarex01_2.str

tonyplot solarex01_2.str -set solarex01_2.set

# SECOND ATLAS RUN FOR SPECTRAL RESPONSE

go atlas

mesh infile=solarex01_0.str

# set contact material to be opaque

material material=Aluminum imag.index=1000

material material=TiO2&Dye user.default=Silicon user.group=Semiconductor

material material=Electrolyte user.default=Silicon user.group=Semiconductor

material material=TiO2&Dye permi=50 affinity=4.0 eg300=1.5 nc300=2.8e19 nv300=1.9e19

material material=Electrolyte permi=3.5 affinity=3.4 eg300=0.93 nc300=2.8e19 nv300=1.9e19

material material=TiO2&Dye sopra=Tio2.nk

material material=Electrolyte sopra=Lif.nk

material material=Electrolyte qe.exciton=1.0

material material=Electrolyte knrs.exciton=1.82694e6 lds.exciton=0.0 taus.exciton=1.0e20 rst.exciton=1.0

material material=Electrolyte a.singlet=2 s.binding=0.004

material material=TiO2&Dye mun=0.3 mup=3e-4

material material=Electrolyte mun=7.07e-2 mup=7.07e-2

material material=TiO2&Dye taun0=1e-6 taup0=1e-6

material material=Electrolyte taun0=1e-6 taup0=1e-6

# set monochromatic light beam for spectral analysis

beam num=1 x.origin=10.0 y.origin=-2.0 angle=90.0

# saves optical intensity to solution files

output opt.int

models conmob fldmob consrh print

# spectral response

solve init

solve previous

solve previous b1=0

log outf=solarex01_2.log

solve b1=1 beam=1 lambda=0.3 wstep=0.025 wfinal=1.0

tonyplot solarex01_2.log -set solarex01_3.set

# The "Available photo current" accounts for absorption in semiconductor regions only.

# Users interested in the overall absorption need to calculate EQE as:

# EQE=I anode / I Source Photo Current * Absorption

extract init inf="solarex01_2.log"

extract name="IQE" curve(elect."optical wavelength", \

-(i."anode")/elect."available photo current") outf="IQE.dat"

extract name="EQE" curve(elect."optical wavelength", \

-(i."anode")/elect."source photo current") outf="EQE.dat"

extract name="EQE2" curve(elect."optical wavelength", \

-(i."anode")/elect."source photo current"*elect."Absorption") outf="EQE2.dat"

tonyplot IQE.dat -overlay EQE2.dat -set solarex01_1.set

# THIRD RUN FOR I-V CHARACTERISTICS

go atlas

mesh infile=solarex01_0.str

# set contact material to be opaque

material material=Aluminum imag.index=1000

material material=TiO2&Dye user.default=Silicon user.group=Semiconductor

material material=Electrolyte user.default=Silicon user.group=Semiconductor

material material=TiO2&Dye permi=50 affinity=4.0 eg300=1.5 nc300=2.8e19 nv300=1.9e19

material material=Electrolyte permi=3.5 affinity=3.4 eg300=0.93 nc300=2.8e19 nv300=1.9e19

material material=TiO2&Dye sopra=Tio2.nk

material material=Electrolyte sopra=Lif.nk

material material=Electrolyte qe.exciton=1.0

material material=Electrolyte knrs.exciton=1.82694e6 lds.exciton=0.0 taus.exciton=1.0e20 rst.exciton=1.0

material material=Electrolyte a.singlet=2 s.binding=0.004

material material=TiO2&Dye mun=0.3 mup=3e-4

material material=Electrolyte mun=7.07e-2 mup=7.07e-2

material material=TiO2&Dye taun0=1e-6 taup0=1e-6

material material=Electrolyte taun0=1e-6 taup0=1e-6

# set light beam using solar spectrum from external file

beam num=1 x.origin=10.0 y.origin=-2.0 angle=90.0 power.file=solarex01.spec

# saves optical intensity to solution files

output opt.int

# saves beam intensity to the log files

probe name=inten beam=1 intensity

models conmob fldmob consrh

solve init

solve previous

log outfile=solarex01_3.log

solve vcathode=-0.01 vstep=-0.01 vfinal=-1*$open_circuit_voltage name=cathode

log off

solve init

solve previous

solve b1=1

log outfile=solarex01_4.log

solve vcathode=-0.01 vstep=-0.01 vfinal=-1*$open_circuit_voltage \

name=cathode b1=1

log off

tonyplot solarex01_3.log -overlay solarex01_4.log -set solarex01_4.set

extract init infile="solarex01_4.log"

extract name="Jsc (mA/cm2)" $short_circuit_current*1e08*1e03/20

extract name="Power" curve(v."cathode", (v."cathode" * i."cathode" *(-1))) \

outf="P.dat"

extract name="Pmax" max(curve(v."cathode", (v."cathode" * i."cathode" *(-1))))

extract name="V_Pmax" x.val from curve(v."cathode", (v."cathode"*i."cathode"))\

where y.val=(-1)*$"Pmax"

extract name="Fill Factor" ($"Pmax"/($"short_circuit_current"*$"open_circuit_voltage"))

extract name="intens" max(probe."inten")

extract name="Eff" ($Pmax/($"intens"*20/1e8))

tonyplot P.dat

quit

I'm searching a few PiN Diode. But the I-V characteristics are quite different. I cannot understand why the photo current's lowest level is not 0V. and the reason of Shift. Thank you for answer

I used osilla I-V solar cell software system to characterize my sample but the graph is straightline with very large fill factors, though it register the PCE, Rsh, Rs, Voc. The graph is uploaded below.

I am simulating the breakdown of a si vdmos, when it reaches the breakdown, the progorm gets Non convergence with the increasing drain voltage, so I try to increase the current of drain useing the following codes, but the progrom gets convergence, but I-V cure goes back with the increasing drain current, I dont know the reason, does anyone have met the similiar issues?

models srh fldmob surfmob auger

impact selb

contact name=gate n.polysilicon

interface qf=3e10

solve init

method newton trap maxtraps=10 climit=1e-4 ir.tol=1e-30 ix.tol=1e-30

log outf=VDMOSFET_BR.log

solve vdrain=0.1

solve vdrain=1

solve vdrain=10

solve name=drain vstep=2 vfinal=52

solve vstep=0.1 vfinal=52.5 name=drain compl=1.e-2 cname=drain

contact name=drain current

solve previous

solve istep=1.2 imult ifinal=1e-03 name=drain previous

I am unable to measure the illuminated I-V characteristics of solar cell using kickstart2 with interfacing with Keithley. Dark characteristic is fine. But when the cell is illuminated, there is noise at low voltage region and also some points are not calculated. I am attaching the image file at one illumination level. We are using 4-wire connections. We are not getting this type of noise in dark I-V characteristics. Not able to understand why we are getting these type of characteristics in illuminated conditions. Would be really thankful for valuable guidance.

I know that at nanoscale conductance is quantized and is determined by transmission probability and number of transmission channels (G value). I know that using uncertainty principle we can derive how I/V becomes 2e^2/h. However, I am a little confused by the zero bias and finite bias conductance. Does zero bias conductance mean that even if we do not apply any voltage, current would still flow?

I am unable to measure the illuminated I-V characteristics of solar cell using kickstart2 with interfacing with Keithley. Dark characteristic is fine. But when the cell is illuminated, there is noise at low voltage region and also some points are not calculated. I am attaching the image file at one illumination level. We are using 4-wire connections. We are not getting this type of noise in dark I-V characteristics. Not able to understand why we are getting these type of characteristics in illuminated conditions. Would be really thankful for valuable guidance.

I have measured the I-V curve of a solar cell, and I got the this curve. Why the I-V present this weird form? What are the possibilities of being at this? Thanks in advance.

Dear colleagues,

I am trying to calculate I-V characteristics for typical (Left electrode) - (Device) – (Right electrode) system. Besides the well-known problem of difficult electronic convergence in NEGF, I notice that final atomic forces along transport direction near the electrode-device region increase largely while increasing bias voltage. Please, see dashed ellipses which denote these “problematic atoms” and Trans.fdf file attached.

For instance,

voltage = 0 V: forces ~ 0.005 eV/Ang

voltage = 0.01 V: forces ~ 2.5 eV/Ang

voltage = 0.04 V: forces ~ 10 eV/Ang

voltage = 0.08 V: forces ~ 22 eV/Ang

Other atoms also possess larger forces while increasing bias voltage, but much less than these two “boarder” atomic layers near the device region. Intuitively I can guess that some of my input parameters lead to a wrong seam (inter-connection) of bulk-like electrode and device region.

Maybe some of the following flags (or related to them) are used wrongly:

TS.Elecs.Bulk true

TS.Elecs.DM.Update cross-terms

Or maybe I should modify some TS contours while changing voltage. Now contour definitions are kept constant for each bias.

To be noticed, for each new bias the previous TSDE file is used to accelerate electronic convergence (DM and H criteria) and for each bias it is succesfully converged. But, again, forces become bigger and bigger.

So, would you mind answering two main questions?

1) Do these large forces are really wrong or it’s some methodological artefact and I should simply ignore it?

2) If such force enlargement is a bad symptom, how to fix it?

Thank you in advance for any suggestion or comment.

four types of switching behaviours are known (1) Binary Switching behaviour (2)multilevel Switching Behaviour (3)unidirectional analog switching behaviour (4) bidirectional analog switching behaviour

in the following IV which one of the behavour is seen ? bidirectional analog switching behaviour ???? What more is it showing

I-V Characterization of thin-film memristor and Interpretation of Pinched Hysteresis Loop

Hello.

I'm trying to measure the rectification behavior with 2 metals, but when two metals are deposited above the semiconductor, the I_V graph does not show a rectification behavior and acts as a resistor. However, with just one metal deposited, the rectification behavior takes place. I'm using the contact type point.

Why does it happen?

Can we learn things from the shape of the IV curve of a diode in order to examine issues and phenomena that exceeds from ideal behavior? Things like the slope of the reverse or forward bias, the knee point s-shape, etc.

What mechanisms, for example, tunneling, SRH, strain in heterojunctions, shunt paths, schottky contacts, too high series resistance, hot carrier effects, panch-throghs, traps, non ideal doping, etc. These are known effects but I'm not sure if and how they reflect in the IV curve or if there are other less known effects that I missing out.

Are there good reviews summarizing different issues and effects in the device (design, process, fabrication) and how they con reflect on the IV curve?

Most material I found talks about these effects but in the context of desired effects on different devices.

Where can I start the learning of issues in PN diodes, or semiconductor structures in general.

Any input on this matter will be highly appreciated.

Thanks

...

Why is I-V characteristic in 10 nm thin film of HfO2 non ohmic/switching type?

I have the short circuit current density calculated from supposed solar cell thin film system

and I want to calculate the short circuit current for a solar cell to plot the I-V & P-V curves

how can we deal with scale up .

any reference please

How to calculate dI/dV/(I/V) in STM? While i calculate it , it also diverges around Ef. How to solve this problem ? Thanks a lot.

I am working with semiconductor devices modeling. At an early stage one need to validate the developed model with data extracted from papers. sometime the reported I-V characteristics is normalized with the channel width. For example what will be the actual value for current in the shown figure?

Hi, I'm studying the electrical properties of amorphous SiC.

I have plotted the I-V curve using data coming from a 4 probe configuration on a TLM structure: the two probes for voltage measurement are in 2 contact pads distant 70micron and the other 2 probes for current injection are in other two external contact pads.

The current used is: from -0.01pA to 0.01pA.

The graphs are more or less straight lines. The strange thing is that at 0 current the voltage is different from zero (around 300 mV).

The idea is that there aren't ohmic contacts , because for ohmic contacts at 0 current the voltage drop should be zero too.

Anyway I don't understand why there is a voltage drop at 0 current.

Hi , while taking repeatedly IV graph from four probe i m getting graph like this , My film is tin selenide . Why am i not getting contact restivity ?

Main goal was to check sheet resistance of the film

using agilant SMU

What is the reason behind a sudden bump near zero ?

what is the reason behind no constant resistance ?

Can we calculate the thick by knowing sheet resistance ??

I am using agilant b 2901a

and "Jandel four probe "

I've recently trying to make Schottky diodes using n-type silicon (waveguide shape, ~10um wide). I used silver for my Omni contact and gold for Schottky contact. These metals are both 20nm thick and the distance between two contacts are about 200~300um.

However, I got an I-V curve just like an normal resistance. Where could it possibly go wrong? Is the material? (Maybe my material is contaminated? Mistaking p type Si as n type?) Or maybe the physical scale of my structure? Or some other reasons?

Hope someone give some advices. Thanks.

I shall prepare semiconductor to use in solar cells

Highly nonlinear bistable current-voltage (I–V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices ( resisitive switching device ) . Kindly explain it .

Hello, I am studying Dram via Sentaurus T-CAD program.

I want to run my device file for I-V or others.

But it sometimes works and I saw some answer and suggestions.

I wonder how i know the mesh size for device?

my device is 3D and 180*34*800 nm

mesh size max: 0.005 0.0025 0.0025/ 0.001, 0.001, 0.001

I just want to know where is it in device manual.

I was studying I-V characteristics of dc plasma and i was confused why voltage decreases after breakdown when current increased. At first i was thinking that till breakdown more electron stuck at the electrode and that increases electric field and that's why voltage increases. When breakdown occurs avalanche of electron pass through electrodes and number of electron around electrode decreases, electric field decreases and that's why voltage should decrease. I don't know whether it is true or not but i assumed it can follow by this.

Hello

Recently, I tried to measure I-V curve of graphene FET device based on ion-gel

The material of ion-gel is P(VDF-HFP) + [EMI][TFSA]

The thickness of ion-gel is roughly 500-800 nm

When I tried to measure I-V curve (I-V for graphene between source and drain, gate voltage is applied to nearby Au pad), I got this weird result... (file is attached

Is there anyone who knows why this thing happen and how to fix it?

Thanks

I have a question. I designed and simulated a tunnel diode using ATLAS with varying the doping concentration of P layer. now, I saved every design with its own .in file and plotted the I-V curve for each then export the data into .dat file (I have 5 .dat file by 5 different doping conc "i.e. 5 different designs"). The question is how to combine these .dat files in one graph to compare among them? (Note: Each design has its own .in file.)

The Suns-Voc method can be used to get the pseudo I-V curve and pseudo FF. But why the validation of Superposition principle necessary to construct the pseudo IV curves ?

When measuring dark J-V of solar cells, why is the minimum current voltage measured for the dark I-V characteristics of the OSCs not at zero?

Dear researchers,

I am currently trying to perform I-V measurements for thin films. Could anybody let me know what is the best way to perform I-V measurements using Keithley 2600. How to make good top contacts for good I-V data. Any kind of suggestion or some discussion would be helpful.

Dear Researchers,

I would like to invent to see film our research group. We present our study and laboratory at University of Rzeszow (Poland).

Our research is focused on the optimization and development of semiconductor devices and especially solar cell structures based on copper oxide and titanium dioxide. TiO2/CuO thin-film heterojunctions have been fabricated by direct current reactive magnetron sputtering using the Modular Platform PREVAC. Initially, the I-V characteristics of our TiO2/CuO solar cells were not shown photosensitive behavior. After 3 years extensive research we successfully obtained TiO2/CuO solar cells.

Architecture : FTO/Cp-TiO2/MAPbI3/Spiro-meotad

This phenomenon is noticeable when only Cp-TiO2 is used without stacking MP TiO2 layer. Also, like the graph, it is a common I-V graph format at first, but when you measure the light multiple times, the graph suddenly becomes strange at a certain voltage.

I want to know the reason.

I want to calculate Jsc from EQE and want to match with Light I-V data. Could you please suggests the method?

Dear colleagues,

The current-voltage measurements (I-V) are performed on Zn(1-x)CaxO/p-Si for different x . I extract the different parameters of the p-n junction, such as the threshold voltage, the IF / IR rectification ratio, the diode ideality factor (n), the saturation reverse current, the potential barrier Fb, and the series resistance (Rs) using the standard I-V method, Nords and Cheung method’s.

I obtain practically the same potential barrier Fb by these 3 methods but the diode ideality factor (n) and the series resistance (Rs) calculated by these methods are different. It's normal? If yes, what has caused this great difference.

Thanks for all in advance.

Have a nice day

I am reading a paper and it mentions that when the applied electric field increases to a threshold value, the screening charges are pulled and begin to move away from the polar surface and as a result band bending occurs. I need some guidance about this screening charges? What are they exactly?

Thanks

I am trying to measure resistance from I-V curve from a chemiresistor/ FET sensor with a keithly sourcemeter. The substrate is soaked/ wet with protein and phosphate buffer only. But the I-V line is not passing through the origin (which probably means it's not showing ohmic characteristics), rather its going through the second quadrant. What could be the possible reason. Picture is attached for reference. Thanks in advance.

I am unable to get a proper I-V characteristic by using silver paste and FTO substrate. As, I do not have any deposition techniques such as sputtering, thermal evaporation for electrode fabrication. Provide some suggestions to have an accurate determination of I-V characteristics of a semiconductor device. The obtained current after light illumination is coming in the range of 10^-11 and 10^-12.

HEK cell is Clamped at different membrane potentials (-100 mV to +90 mV; 10 mv Step with Vh -60 mV) of GluK2 receptor and recorded the current by application of 10 mM L-Glutamate.

Herewith I attached data excel file having individual data points (mV and pA)

Could you please explain how to plot the rectification index curve by using these data points? Just for the example purpose, I have given the N=1 data points.

Thank you.

Hi all,

I am new to electrophysiology, and I have some inqueries about current-voltage relationship.

Why some authors plot both I-V relationship and I/Imax-V relationship. What is the difference between them?? And why they sometimes show some differences in statistical analysis and/or significance at some potentials when comparing the different treated groups ? For example,.there may be sigificance in I-V plot between gpA and B which disappear in I/Imax-V

2. How can I know that a drug has reached its steady-state of action for example; AICAR.

Dear siesta users

I am using transiesta code to get the I-V characteristics of Armchair MoS2 nanoribbon as scattering (with 8 unit cells) and electrode material. All the calculations (electrode, transiesta and tbtrans) run perfectly for the voltage range of 0-2V with good SCF convergence. However, in all voltages I get nearly zero transmission in the bias window and consequently very low current (about 10^-16 A).

Since my armchair MoS2 NR is a semiconductor with the bandgap of about 0.5 eV I expected that current should start to increase exponentially from 0.5 V bias and reach the order of micro Ampere. I have attached .fdf files of my scattering and electrodes.

I would appreciate if someone could help me to find the problem.

Best regards,

Samaneh Soleimani-Amiri

Hi, now I'm graduate student and my research part is perovskite solar cell.

our research teammates started reproducibility experiment at July. and we are still doing it. however, our I-V results have so many noise. and we don't know why.

we use FTO substrate and 4% SnO2 by diluting 15% SnO2. and we use only MAPbI3 and spiro solution without any additives. and we are doing spin coating in glove box, but when we finish coating, there are so many dust on the surface. we also use filter before coating perovskite but not working.

I'll upload our I-V result. please answer it and I hope to find problems.

Dear all,

When using tonyplot, I can get the I-V curve without any problems, but when I try to add small signal analysis after gate voltage sweep (ac freq=1e6) in Silvaco Atlas it shows zero Cgd for all gate voltages. I was wondeing if there is a way to plot the C-V curve correctly.

Thank You in advance.

For a range of concentrations of protein, I am getting the I-V (Current-voltage) data from a Keithley sourcemeter. Accordingly, I am getting the resistance as the response of protein-protein binding on carbon nanotube on my biosensor. What formula should I use to get normalized response versus concentration gradient? Is there any good textbook on this to show the calculations step by step from scratch? Thanks in advance.

I know a rule of thumb is that to avoid any current shielding effects you should not bring the Luggin capillary tip closer to the WE than a diameter length of the capillary. My capillary tip diameter is 1 mm, so I could position the tip 1 mm from my WE. However, my WE is producing hydrogen (I am investigating different cathode materials for an electrolysis cell), and I am wondering if the generated H₂ bubbles will start to affect my measurements (I-V curves, etc.), Gas is non-conductive. Thus, I imagine that I should somehow take into account the increased measured resistance that is caused by the bubbles.

Do the requirements for the distance between the capillary tip and WE change when the WE in producing gas?

Please specify doping values, if any. I mainly want the I-V to show the effect of recombination at low bias and high injection at high bias

Dear all,

I am working on mixed cation and mixed halide perovskite solar cells(PSCs). I have found that the steady state output(SSO) always exceeds the efficiency from I-V measurement, usually 1% absolute difference(e.g. 16% from I-V and 17% from SSO of the same cell). I changed the scan rate from ultra-slow to ultra-fast and this difference remain the same. What are the possible reasons for this phenomenon? Which efficiency is more credible and how can I make them in better accordance?

Thanks in advance！

In four doped samples the series resistance of the samples was increased with the increasing the dopant percentage, but the I-V results show at a particular voltage the current was increased by these percentages of dopant (it means that the sheet resistance was decreased). How to explain this subject.

Hello, im am currently trying to identify possible current conduction mechanisms for graphene schottky diodes by looking at I-V characteristiscs. From reading book "Physics of semiconductor devices" by Sze I know that depending on the strength of applied electric field, electron drift current is expressed by different equations (for mobility regime, velocity saturation regime and ballistic regime J~V^2, J~V and J~V^1.5 respectively). However, double log plotting I-V characteristics gives lines for all of mentioned mechanisms. Is there any experimental or analytical way to distinguish one from another?

In general, ideality factor ''n'' could be calculated by:

n=(V2-V1)/ln(I2/I1)

where voltage and current are taken from the dark I-V curve.

For simple PN Si diode, it is close to 2.

In my case NPNN Si diode and PNN Si diode, however, the ideality factor is less than 1 (0.05-0.2).

I could not find any explanation or research where the ideality factor could be less than 1.

Any suggestions or comments?

Hello!

I am studying temperature- and doping-dependent physical models of semiconductor properties, such as energy gap, intrinsic carrier concentration, carrier mobilities, minority carrier lifetimes. Now I want to understand if I use them correctly. Therefore, I try to apply them to calculate the current-voltage characteristics of p-n junction and compare the calculated curves with published measurements (preferably in a wide range of temperature and doping concentration).

I do not use numerical simulation. I calculate the j(V) using the sequence of equations given in the attached file.

The problem is that the Shockley diode equation requires both N_a and N_d values. I studied a lot of experimental work on the I-V characteristics of diodes, but I did not find any suitable paper in which both values of N_a and N_d were given. The most interesting semiconductor for me is 3C-SiC, but I also checked many papers on 4H-SiC, 6H-SiC, and even Si (without result). This fact makes me think that I am doing something wrong.

Can you please recommend some suitable papers or point out my mistakes, if any?