Science topic

# Ferroelectrics - Science topic

Explore the latest publications in Ferroelectrics, and find Ferroelectrics experts.
Filters
All publications are displayed by default. Use this filter to view only publications with full-texts.
Publications related to Ferroelectrics (10,000)
Sorted by most recent
Poster
Full-text available
Dear Colleagues, Today's computing is not limited to designing an application graph of the desired work for available hardware and then starting the execution; it is more application-specific and data-centric. The processor should be able to predict future machine cycles and improve performance through data-centric learning. This type of architect...
Article
Full-text available
Stem cells from human exfoliated deciduous teeth (SHED) uniquely exhibit high proliferative and neurogenic potential. Charged biomaterials have been demonstrated to promote neural differentiation of stem cells, but the dose-response effect of electrical stimuli from these materials on neural differentiation of SHED remains to be elucidated. Here, b...
Article
Full-text available
BiFeO3 (BFO), as a kind of narrow band-gap semiconductor material, has gradually emerged advantages in the application of photocatalysis. In this paper, Ca doped BFO nanoparticles Bi0.9Ca0.1FeO3 (BCFO) were prepared by sol-gel method. And BCFO and CdS nanocomposites with two morphologies were obtained by controlling the time of loading CdS under a...
Article
Full-text available
In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (about 33% improvement) and the off-state current decre...
Article
Full-text available
Antiferromagnetic (AFM) spintronic devices play a vital role in the development of novel spintronic devices due to their attractive features. Herein, the interfacial state manipulation of the AFM IrMn material is investigated by combining a ferroelectric single crystal Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) with an electric field (E-field)-controlled ma...
Article
Full-text available
It is well known that stacking domains form in moiré superlattices due to the competition between the interlayer van der Waals forces and intralayer elastic forces, which can be recognized as polar domains due to the local spontaneous polarization in bilayers without centrosymmetry. We propose a theoretical model which captures the effect of an app...
Article
Full-text available
Two-dimensional (2D) magnets have broad application prospects in the spintronics, but how to effectively control them with a small electric field is still an issue. Here we propose that 2D magnets can be efficiently controlled in a multiferroic heterostructure composed of 2D magnetic material and perovskite oxide ferroelectric (POF) whose dielectri...
Article
Full-text available
Charge carrier modulation of graphene using the ferroelectricity of a nearby dielectric can be useful for controlling the electronic properties of graphene. However, when graphene is located on ferroelectric oxides, their electrical coupling frequently shows abnormal behaviors, such as anti-hysteresis, in field-effect transistor operation. From the...
Article
Full-text available
In this work a ferroelectric liquid crystal (FLC) modulator with a non-standard large switching rotation angle, close to 90∘, is fabricated and characterized. The modulator acts as a switchable wave-plate with an in-plane rotation of the principal axis under the action of a bipolar voltage. In the ideal situation of half-wave retardance, the device...
Article
Full-text available
Magnetoelectric phenomena are intimately linked to relativistic effects and also require the material to break spatial inversion symmetry and time-reversal invariance. Magnetoelectric coupling can substantially affect light–matter interaction and lead to non-reciprocal light propagation. Here, we confirm on a fully experimental basis, without invok...
Article
Full-text available
2D spontaneous valley polarization attracts great interest both for its fundamental physics and for its potential applications in advanced information technology, but it can only be obtained from inversion asymmetric single-layer crystals, while the possibility to create 2D spontaneous valley polarization from inversion symmetric single-layer latti...
Article
Full-text available
Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium titanate (STO) substrates by molecular beam epitaxy. The electric field due to the cone of the atomic force microscope tip is demonstrated as the dominant electric field for domain ex...
Article
Full-text available
We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band. Using first-principles calculations and a quantum-mechanical tunneling model, we studied an asymmetric FTJ SrRuO 3 /BaTiO 3 /SrTiO 3 /SrRuO 3 . The resonant...
Article
Full-text available
Undoped and RE 3+ (RE: Pr; Nd; Dy; Ho; Tm) doped 0.925Na 0.5 Bi 0.5 TiO 3-0.075K 0.5 Na 0.5 NbO 3 (NBTKN0.075/NBTKN0.075-RE) ceramics were synthesized using the solid-state synthesis method. X-ray diffraction analysis revealed a pure perovskite structure without secondary phases. The Ho, Dy and Tm ions revealed a dielectric curve with a more diffus...
Article
Full-text available
Piezo-/ferroelectric materials with high Curie temperature (TC) are widely needed in sensors, actuators and transducers which can be used for high-temperature (HT) electromechanical transduction applications. In recent years, remarkable progress has been made in bismuth-based piezo-/ferroelectric perovskite materials (BPPs). In this article, recent...
Article
Full-text available
We propose a nonlinear thermoelectric framework adequate for capturing the phenomenon of electrical hysteresis in ferroelectric materials. We call this formulation rate-independent ferroelectricity, because the rate of polarisation is linear in the rate of the electric field, so that the process is independent of the time scale. This is inspired by...
Preprint
Full-text available
Embedded Artificial Intelligence (EAI) – Devices, Systems, and Industrial Applications, European Solid-state Devices and Circuits Conference 2022
Article
Full-text available
(Na0.5Bi0.5)TiO3 lead free ceramics have been synthesised by conventional sol-gel reaction method. The crystalline phase of calcined ceramics was studied at room temperature using X-ray diffraction. Rietveld refinement of the XRD measurements by FullProf showed that the samples have a rhombohedral structure with a space group R3c. In this study, NB...
Article
Full-text available
Yttrium manganite, YMnO3, was doped with different concentrations of titanium (x = 0, 0.04, 0.08, 0.10, 0.15, 0.20) in order to improve the microstructural and multiferroic properties. The powders were prepared using sol-gel polymerization complex method from citrate precursors. Depending on the titanium concentration, the hexagonal structure and/o...
Article
Full-text available
In this work, heteroepitaxial Bi0.90La0.10Fe0.95Mn0.05O3 (BLFMO) thin films have been grown on Si (100) substrate using LaNiO3/CeO2/Y0.08Zr0.92O3 buffer layers and on SrTiO3 (STO) substrate using pulsed laser deposition. SrRuO3 (SRO) has been used as a bottom electrode in both cases. AC conductivity analysis reveals that BLFMO films deposited on Sr...
Conference Paper
Full-text available
PAPER ID: 3750604; PAPER TITLE: “Morphology, spectral and electrical properties of porphyrin-doped ferroelectric polymer films”; DIV.: PMSE / SESSION TYPE: Poster.
Conference Paper
Full-text available
CMOS compatibility and the low process temperature of hafnium oxide (HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of using hafnium oxide-based ferroelectric memory for in-memory-computing applications. Finally, we try to draw the...
Article
Full-text available
The device’s integration of molecular electronics is limited regarding the large-scale fabrication of gap electrodes on a molecular scale. The van der Waals integration (vdWI) of a vertically aligned molecular layer (0D) with 2D or 3D electrodes indicates the possibility of device’s integration; however, the active junction area of 0D-2D and 0D-3D...
Article
Full-text available
The effects of sintering temperature on the dielectric, ferroelectric, and magnetic performance of Co0.8Cu0.2Fe2O4@(Pb0.95La0.05)(Zr0.86Ti0.14)O3 (CCFO@PLZT) composite ceramics with core–shell structure were investigated. The X-ray diffraction results confirmed the bi-phase structure of the composites, with insufficient sintering temperature and in...
Article
Full-text available
Ferroelectric semiconductors represent an exciting branch of new‐generation optoelectronic devices. However, regarding severe polarization deterioration caused by leakage current, it is challenging to couple ferroelectricity and semiconductive properties in a single‐phase material. The first quadrilayered ferroelectric semiconductor of 2D homologou...
Article
Full-text available
Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO2), a representative correlated material, we develop an approach to control a metal‐insulator transition (MIT) behavior by empl...
Article
Full-text available
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications. However, due to the polycrystalline nature of these hafnium oxide films, highly scaled devices face variability concerns. In order to enable smaller grains to...
Article
Full-text available
Recently, electrically conducting heterointerfaces between dissimilar band‐insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually muc...
Article
Full-text available
Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism....
Article
Full-text available
Methylammonium lead iodide, as related organometal halide perovskites, emerged recently as a particularly attractive material for photovoltaic applications. The origin of its appealing properties is sometimes assigned to its potential ferroelectric character, which remains however a topic of intense debate. Here, we rationalize from first-principle...
Article
Full-text available
In this work, pure Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) and CoFe2O4 (CFO) ceramics were prepared by the sol–gel and co-precipitation method, respectively. Then, the BCZT and CFO were joined to prepare the two-layer CFO/BCZT and three-layer BCZT/CFO/BCZT composite ceramics with the silver epoxy. The influence of the number of layers on the dielectric, re...
Article
Full-text available
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concentration range, Si:HfO2 layers based on thermal ato...
Article
Full-text available
In this work, the authors have demonstrated and differentiated between various analog/RF and linearity performances of a lattice-matched normally off dual-gate ferroelectric metal oxide semiconductor-high electron mobility transistor (DG Fe-MOSHEMT) and dual gate dual metal ferroelectric metal oxide semiconductor-high electron mobility transistor (...
Article
Full-text available
The admittance characterizations of the ferroelectric Perovskite Materials 1% Osmium (Os)-doped YMnO3 and p-Si contacts were conducted by capacitance–voltage (C–V) and conductance–voltage (G–V) curves at various frequencies. In measurements performed in this study, it was seen that the device behaves like a metal/oxide layer/semiconductor (MOS) or...
Article
Full-text available
Bismuth sodium titanate (BNT)‐based lead‐free piezoceramics are promising for replacing lead‐based piezoceramics in piezoelectric actuators due to their large strains. However, achieving low‐hysteresis large‐strain BNT‐based ceramics over a broad temperature range is challenging, owing to the complexity of the composition design and phase transform...
Article
Full-text available
The electronic and magnetic properties of the BaTiO3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_{3}$$\end{document}/LaMnO3\documentclass[12pt]{minimal} \usepackage...
Article
Full-text available
This paper deals the hybridization of tunnel FET with the memristor for better execution of combinational and sequential circuits. Here, device structure of vertical tunnel FET and memristor are designed and their performance parameters are investigated. For transistor designing, we have introduced a 40 nm PIN Vertical Tunnel Field effect transisto...
Article
Full-text available
Ferroelectric solid solutions with composition near the morphotropic phase boundary (MPB) have gained extensive attention recently due to their excellent ferroelectric and piezoelectric properties. Here, we have demonstrated a strategy to realize the controllable preparation of BiFeO3-BaTiO3 (BF-BT) epitaxial films near the MPB. A series of high-qu...
Article
Full-text available
The domain orientations’ distributions in the unpoled lanthanum and niobium-doped lead zirconate titanate (La,Nb-doped PZT) ceramics after the application of different poling electric fields (EPn\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs...
Article
Full-text available
Reservoir computing offers efficient processing of time-series data with exceptionally low training cost for real-time computing in edge devices where energy and hardware resources are limited. Here, we report reservoir computing hardware based on a ferroelectric field-effect transistor (FeFET) consisting of silicon and ferroelectric hafnium zircon...
Article
Full-text available
Ferroelectric domain walls are quasi‐2D systems that show great promise for the development of non‐volatile memory, memristor technology and electronic components with ultra‐small feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive st...
Article
Full-text available
Polymorphism allows one to design symmetry of the lattice and spatial charge distributions of atomically thin materials. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, we report the atomi...
Article
Full-text available
Ferroelectric ceramics BaTiO3:x%Eu (x = 0, 0.1, 1, 2, 3) were synthesized by a conventional method. Structural investigation confirmed that all ceramics possessed tetragonal (P4mm) symmetries at room temperature for the undoped ceramics as well as for the doped ceramics. Furthermore, a slight downshifting of the Curie temperature (TC) with an incre...
Article
Full-text available
Sliding ferroelectricity is a recently observed polarity existing in two-dimensional materials. However, due to the weak polarization and poor electrical insulation in these materials, existing experimental evidences are indirect and mostly based on nanoscale transport properties or piezoresponse force microscopy. We report the direct observation o...
Article
Full-text available
Self-powered, highly unobtrusive, low-cost and accurate arterial pulse wave monitoring devices need to be developed to enable cost-efficient monitoring of entire cardiovascular disease risk groups. We report the development of a scalable fabrication process for a highly unobtrusive piezoelectric ultra-thin (t ~ 4,2 µm) e-tattoo arterial pulse wave...
Article
Full-text available
2D hybrid halide double perovskites (HHDPs) have been demonstrated to be a promising alternative to conventional lead‐based halide perovskites as a new system of photoferroelectrics, due to their unique characteristics of environmental friendliness, favorable stability, and fascinating optoelectronic properties. Herein, for the first time, a 2D iod...
Article
Full-text available
Er-doped 0.98(K0.5Na0.5)NbO3-0.02Ba(Bi0.5Nb0.5)O3 transparent fluorescent ceramics were prepared using traditional solid-phase method. The (K0.5Na0.5)NbO3 (KNN) ceramics were modified by introducing the second group elements Ba(Bi0.5Nb0.5)O3 and rare earth ions Er³⁺. The effects of Er³⁺ on the structure, optical and electrical properties of transpa...
Article
Full-text available
Resonant tunnelling is a quantum‐mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum well (QW) structure. A ferroelectric resonant tunnelling diode exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, we report the discovery of robust room‐t...
Article
Full-text available
Layered 2D crystals have unique properties and rich chemical and electronic diversity, with over 6000 2D crystals known and, in principle, millions of different stacked hybrid 2D crystals accessible. This diversity provides unique combinations of properties that can profoundly affect the future of energy conversion and harvesting devices. Notably,...
Conference Paper
Full-text available
Matrix toughening is one of the most popular approaches to improve the overall fracture toughness of polymer composite materials. The most widely known approach for matrix toughening is the addition of a second phase such as rigid or/and rubber particles to dissipate the fracture energy, and vessels that containing healing agents that prevent furth...
Article
Full-text available
This paper basically proposes and compares three different configurations of ferroelectric oxide material on silicon body of vertical tunnel field-effect transistor. The charge plasma-ferro-VTFET (Ferro-CP-VTFET), junctionless ferro-VTFET (Ferro-JL-VTFET), and Ferro-PIN-VTFET device design are compared with different simulation characteristics to v...
Article
Full-text available
Lead magnesium niobate (PMN)-based relaxor ferroelectrics are very versatile and have emerged as highly promising materials for research in various fields. Hence, an investigation of the structural and electrical properties exhibited by the PMN-based ternary system is carried out. The magnetic element-doped ternary composition (1 − x)(0.67PMN-0.33P...
Article
Full-text available
Single-phase Bi0.5(Na0.82K0.18)0.5Ti1-xMxO3–0.01LiSbO3 (BNKT–LS-xM) (M=Ta, Nb or Zr, 0 ≤ x ≤ 0.05) lead-free ceramics are prepared by solid-state reaction method. The influences of Ta ⁵⁺ , Zr ⁴⁺ or Nb ⁵⁺ doping at B-site of perovskite structures on the crystal structure, chemical structure, ferroelectric and energy-storage properties of BNKT–LS cer...
Article
Full-text available
(Ba0.955Ca0.045)(Zr0.17Ti0.83)O3 [BCZT] epitaxial were grown on La0.67Sr0.33MnO3 (LSMO) coated (100)‐oriented MgO single crystal substrates by pulsed laser deposition (PLD) technique. Herein, we report crystal structure, ferroelectric, piezoresponse force microscopy (PFM) and energy storage properties near the morphotropic phase boundary (MPB) comp...