Science topic

Electronics Design - Science topic

Explore the latest questions and answers in Electronics Design, and find Electronics Design experts.
Questions related to Electronics Design
  • asked a question related to Electronics Design
Question
13 answers
Hi Everyone,
Can you give me a solution about how to export high quality figures from MATLAB Simulink for inserting in MS Word. The generated circuit line in Simulink needs to be clear and bold that preferable for publication. After Drawing the circuit by default setting seems lines are very thin after COPY.
Looking forward to hearing from you.
Thanks
Relevant answer
Answer
ModelName % to open the model
print('-sModelName','-dpng','model.png')
This is a way to save ModelName.mdl in png format. Image name will be modemodel.png
  • asked a question related to Electronics Design
Question
19 answers
Hello,
I have been trying to research to develop a cascade CS CS Low noise amplifier on keysight ADS. I haven't been able to find a direct reference for such LNA.
I would appreciate your assistance
Thank you
Relevant answer
Answer
See this paper in MTT Transactions:
A Graphic Design Method for Matched Low-Noise Amplifiers, Feb 1990
  • asked a question related to Electronics Design
Question
9 answers
If you refer to the images attached of opamp, one is open loop config of opamp and the other is the closed loop config of opamp. In both of these equations, the formula to obtain output voltage remains the same including the common mode signal affects. However, the Adm term, called as the differential gain of opamp or the circuit, in open loop config refers to the open loop gain of opamp while the Adm term in the second circuit refers to the closed loop gain of opamp. The books I have referred are: Microelectronic Circuits (Seventh Edition) by Sedra Smith, and Op-Amps and Linear Integrated Circuits (Fourth Edition) by Ramakant A. Gayakwad.
Is the reason because the Adm and the Acm in the first circuit refer to the differential gain and the common mode gain of the circuit and the circuit is opamp itself so Adm and Acm are the differential gain and the common mode gain of the opamp itself? While in the second circuit, the Adm and the Acm are the differential mode gain and the common mode gain of the whole circuit? But I saw in Sedma Smith that for the second circuit, output voltage formula of opamp being used in terms of open loop gain without including the affect of internal common mode gain of opamp.
Relevant answer
Answer
There are some good answers by esteemed colleagues but I want to refer to very basic concepts which are the configurations of both amplifiers: the op amp and the differential and difference amplifier based on a circuit of the op amp.
As both amplifiers has a differential input then both have a differential gain and a common mode gain. In every configuration, there are two input voltages and one output terminal.
The two amplifiers have the same terminology as they have similar configuration but the values of the values of Ad and Ac are surely different.
So, the matter is definition of the performance parameters.
Best wishes
  • asked a question related to Electronics Design
Question
4 answers
Hi! I am trying to convert a fully-positive 50Hz square wave into a flat signal using a low-pass filter. However, I can't find any reference to identify the minimum cut-off frequency. How can I do this?
Relevant answer
Answer
The explanations made by other researchers must be helpful.
Nevertheless, I want to make some other comments. I will try my best not to make repetitions but to provide better understanding.
The cut-off frequency of your low-pass filter should definitely be lower than 50Hz (fundamental freq. of your square-wave signal). However, keep in mind that the filter will not be an ideal filter; that is, the AC components of your signal (50Hz and its harmonics) cannot be suppressed by your filter completely. For a filter with a gradual transition after cut-off frequency, the cut-off frequency should be chosen very small (Joerg Fricke already provided an example for a 1st-order low-pass filter, with a monotonic transition of roughly -20dB/dec above cut-off frequency).
If you don't want to set the cut-off frequency to a very low value (There may several reasons for this), then, by using a higher-order filter you can obtain sharper transitions after cut-off frequency. Active filters can provide such behavior more effectively, with which you can also prefer to use Chebyshev, elliptical, etc. types of filter transfer functions to obtain a sharper transition band (compared to Butterworth) with the same filter order.
I don't know for which application you need the filter, so I am not sure whether you need a very sharp filter or whether active filters are suitable for your application. So, I cannot provide further suggestions.
Best regards...
  • asked a question related to Electronics Design
Question
3 answers
I have designed a bilayered structure on CST which is having copper patches as upper and bottom layers and a substrate sandwiched in between but I want LC equivalent circuit for the whole structure.
Relevant answer
Answer
Dear Asfandiyar Khan thanks for asking this very interesting technical question on RG. As an inorganic chemist I'm absolutely not a proven expert in this field. However, I know that it often pays off to search the "Questions" and "Publications" sections of RG directly for helpful hints. In this context please have a look at the following closely related technical questions which have been posted earlier on RG. It might help you in your analysis when you check the answers given to those questions:
How can extract antenna equivalent circuit from CST microwave studio?
(9 answers)
and
How to draw equivalent circuit model for antennas?
(28 answers)
I hope this information is useful. Good luck with your work and best wishes!
  • asked a question related to Electronics Design
Question
5 answers
RRAM device consists M-I-M (Metal - Insulator - Metal) structure and in most of the RRAM device insulating layer plays important role in resistive switching between HRS (High Resistance state) and LRS (Low Resistance State).
Thanks
Relevant answer
Answer
Hope you are well.
There comparison criteria between the different oxides are:
The ratio of the Ion/Ioff. As this ratio increases the device is better.
The value of the on current must be small for smaller power consumption.
The speed of transition from the on off to on state and vice versa.
The stability of device among the cycling among the sates.
The turn on voltage voltage called also set voltage must be small to reduce the switching power of the memory.
Ease of manufacturing.
please see the paper in the link:
Best wishes
  • asked a question related to Electronics Design
Question
3 answers
Can someone help me to solve this task below.
Relevant answer
Answer
What i can’t understundom you Kenechukwu Emmanuel Umeh
  • asked a question related to Electronics Design
Question
16 answers
I have a high aspect flexible aircraft wing of 2 meters in which I want to place 6 gyroscopes along it to measure its deflection for research purposes. I want to be able to collect all the data effectively at 100Hz frequency from all the gyroscopes ( at the same time) to feed an estimator . It is not an easy task to do because I need communication protocol to be fast, robust to noise generated from BLDC motor, works for long distances and cheap.
Please see specs below :
- The longest distance between the control unit and any IMU will not exceed 2 meters.
- The Data collected from all the IMU’s should be relatively at the same time.
- The communication protocol that to be used should be highly robust to noise.
- The protocol to be used can be adapted with available microcontrollers.
- Data should be collected at 100 Hz frequency in control unit (T sampling = 10 ms).
There are alot of IMU sensors which can be used from adafruit, sparkfun or silicon labs. Currently i have two candidates thunderboard sense 2 and Razor sparkfun IMU in which both can be used as a sensor and a microcontroller at same time since they have arm processor and can be programmed.
Any one can suggest a suitable way to connect and interface with these sensors?
Any one can suggest a cyber physical system in which we can connect these sensors in a specific architecture in which we can gather data with interrupts respecting the above specs?
Thank You.
Relevant answer
Answer
Ali Srour I guess it must be ok for moderate clock. E.g. if you are using 5MHz the length of signal in cable will be 30 meter (half speed of light in the cable) and considering back and forth delay the clock domain has radius of 15 meters . One can use e.g. 1 or 2 MHz for peace of mind, should still be OK for 100Hz (one can transfer almost 1e6/100 = 1e4 bits at 1MHz/100Hz). Alternatively, you can poll sensor sequentially but it complicates things e.g. as adding the time shift between them. For sequential polling however i2c would be easier at that (rather low still) sample rate (there are nice i2c isolators too considering EMI hardening).
  • asked a question related to Electronics Design
Question
10 answers
Many groups are building actuators and exoskeletons without considering the safety standards as from prospective commercially approved products.
The question is: what standards have to be followed for mechanical and electronics design of actuators and respectively exoskeletons ?
Which ones do you use?
For ex: max torque, voltage, current, weight, bending angles, gaps (between the cover and moving parts) and so on.
Relevant answer
Answer
Hello everyone and thanks again for your inputs to this question. We are getting closer to put our actuator to the market. Here you can find some preliminary pics and tests http://www.smarcos.eu/products/
  • asked a question related to Electronics Design
Question
8 answers
I am tasked with building a low cost back scattering probe that can be used for fluorescence or Raman alike. My expertise lies in front end electronics design and I haven't had a lot of exposure to optics and optical instrument design. My setup right now looks like this as shown in "Setup.jpg". I am using a free space 784nm laser with ~2nm FWHM and about 2mm beam diameter. I am feeding this to a cube beamsplitter (https://www.thorlabs.com/thorproduct.cfm?partnumber=CCM1-BS014). The beam exiting is fed through a long pass filter @800nm cut on (https://www.thorlabs.com/thorproduct.cfm?partnumber=FELH0800). The output beam is then fed to a spectrometer using a focusing optic. With this setup, the spectrum collected looks as shown in "784nm_Spectrum.png". I don't know what to make of this spectrum. There is the peak @784nm due to laser but I would have expected there to be a "flat" spectrum after 800nm. Instead I see this weird "decaying" pattern. The spectrometer has been calibrated and should not cause any error. Please have a look and let me know if you have run into something similar or what you think it could be. I am a bit clueless at this point.
Relevant answer
Answer
After some thoughts, I think the tail you are measuring is just the remaining of your laser peak. Even though it is a laser, it still has a linewidth which can be several nm wide (cheap lasers anyway, 2 nm in your case). What you are measuring is the convolution of the laser output spectrum and your filter.
If you remove your filter and replace it with a neutral density (otherwise you might burn your spectrometer) you should measure a nice lorentzian shape peak.
at 10 times your linewidth you still have around 0.1 % of the peak power.
The filter you are using is OD4 so it means that the peak is attenuated by 10000.
So basically the fact that you still see your peak means that your measuring signal attenuated by 10000 and then around 800 nm this attenuation jumps to almost 0. Since the power you receive from the tail is of the order of your attenuated peak you measure this strange looking spectrum.
  • asked a question related to Electronics Design
Question
3 answers
Nutrition related diseases are nowadays a main threat to human health and pose great challenges to medical care . A crucial step to solve the problems is to monitor a daily food intake of a person precisely and conveniently . Can use a wearable device to monitor and recognize food intakes in daily life ?
Relevant answer
Answer
As for as my personal experience is concerned, couldn't benefited by this technique.
  • asked a question related to Electronics Design
Question
8 answers
I have a modulator that through an inductive link, I send my ASK modulated data to the secondary coil and on the secondary part, with some circuit I detect my data, now I want to compare two transmitted data and received data together and calculate bit error rate, as a transmitted data I put an LFSR circuit in the transmitter circuit and use PBRS5 (a pattern of random data producer) .I think that I need some digital electronics information that determine to me how to get data and compare it to the transmitted data. I used serial port for example RS232 to get data. but because of start and stop bit of serial port it was not true(because my random data is not in serial format, it is millions bits of random). so what port should I use and how calculate the bit error rate. I want a true and simple method to calculate this parameter practically.
Relevant answer
Answer
Hi,
if I understand your experiment, you want to send the generated data using a serial port. The RS232 mentioned by you has its own protocol. The start and stop bit do not the transmitted data. The workflow of the RS232 port generates these bits themselves and, on the receiving side, the receiver protocol again removes the start and stop bits from the transmitted data.
The problem may be the speed of data generation and RS232 bandwidth (limited speed).
You can compare the input and output data of your experiment with the XOR circuit. If the coincident input and output bits are different, the XOR circuit will generate logic output 1. If you divide the number of logic 1 at the XOR output by the number of tranferred bits, you get the percentage of error tranferred bits.
  • asked a question related to Electronics Design
Question
19 answers
Hello:
 I´m working on an analog active crossver in the audio range and need to achieve zero phase (or close to it) in the pass band. I have tried several prototypes but now I discover several differences between the real components (opamps) and the simulations (i tried a 5532 from internet and the 741 from Texas and both showed differences, one in amplitude and the other in phase).
I´m a bit stuck and don´t know how to face this challenge. I already asked in facebook groups, linekdin and here at university, but I´m not clear about how to fix simulation issues and how to organize the design process. This is my first electronics design job, so any help will be appreciated.
Relevant answer
Answer
In the beginning let us confine our study on the simplest op amp circuit, which is an inverting op amp amplifier with resistive feed back.The phase shift of such amplifiers has single pole with a phase shift of -45 degrees at the - 3dB point. So in order to limit the phase shift you have to operate your amplifier in the region of the flat frequency response.
The gain can be expressed by A= A0/ (1+ jw/wc),
Where Ao is the gain at zero frequency, w is the frequency of the applied signal and wc is the cut off frequency. The phase of the gain A, phi= - tan^-1 w/wc, for w/wc=1, phi will be -45, phase lag by 45 degrees.
If we want to limit the phase delay of the amplifier to a specific value say phil: phi limit, then as phil is very small, one can approximate the phse relation ship as:
phil= - wl/wc,
Then one can gat wl= phil x wc, and fl= phil fc
fl will be the maximum input frequency, phil is the allowed phas delay, and fc is the required cut off frequency of the amplifier.  If phil= 5 degrees= .0 8726 rad, fl= 10 kHz,
Then fc= 114.6 kHz.
This example shows how far cut off frequency is much greater than the audio signal frequency. 
The question now what is the required gain of the amplifier A0 of the amplifier,
Say A0=10,
Then the minimum required gain bandwidth product of the op amp FT= greater than 114.6x10= 1146 kHz= 1.1 Mhz.So, the op amp 741 can just provide the required function with upper bound given above, that the gain of the amplifier must not be greater than 10.
Till now it is okay? not just so, because the amplifier has this bandwidth for small signals in the millivolt range. As at large signal the op amp speed is limited by its slow rate.  Since your signal is large then you have to use op amps with very high slew rate dV/dt, 
For a sinusoidal wave with  max dV/dt= Vsm wl= 1Vx 2 pi 114.6 k=720 k V/s, So you an amplifier with a slew rate not less than 1 V/us if your amplitude is limited to 1V.  If you want to amplify signals with higher amplitude you have to scale your slew rate.
Please you can build your circuit on the light of my analysis in this post. You problem will be solved.
Best wishes
  • asked a question related to Electronics Design
Question
1 answer
Generally in pollution induced flashover of porcelain insulators, if the bottom is more polluted compared to the top, then the movement of arc starts from pin towards cap. Under such nonuniform cases, why with increase in the  ratio of ESDD at top to ESDD at bottom does the pollution flashover voltage also increase?
Relevant answer
Answer
Generally, Bottom ESDD will be higher than Top surface. Initiation arc need not be from bottom alone. Probability of initiation is more from bottom.. Many times T/B ratios will be specified in certain pollution conditions. This is required especially, in DC pollution tests, as the bottom surface behaviour is critical in DC.
Generally take the performance of Different ESDD on top and bottom of the insulator. This performance will be and must be same if insulator is coated with Average ESDD. Therefore, uniform pollution has been suggested in standards.
Hope this will clarify your doubt.
  • asked a question related to Electronics Design
Question
3 answers
Hello Everyone,
I want to do the performance analysis of flip-flop with different data activity i.e at 0%,25%,50% and 100%. what should be the data input and clock input for flip-flop. I am little bit confused regarding this. Need Clarification. Thanks
Relevant answer
Answer
sir, I have designed the D flip flop
  • asked a question related to Electronics Design
Question
6 answers
what is the difference between static and high frequency dielectric constant. What role these constants play in the electronic devices?
Relevant answer
Answer
 First of all let's make clear that these so-called constants are in fact functions of temperature and frequency but for simplicity of calculation one can consider they remain approximately constant for a given (and limited) temperature and frequency domain.As you know the dielectric constant is related to a material's capacity of modifying electrical flux density by phenomena such as polarization -a mere orientation of molecules - or dissipation losses as heat, etc.  So the dielectric "constant" is just the ratio of the capacitance value for ideal capacitors one having the material as dielectric and the other one void between their identical plates. 
These phenomena are material-dependent because the forces necessary to orient molecules at the expense of the electrical field passing through the material have to overcome different structural cohesion electrostatic, van der Waals forces, etc caused by different "layouts" of different materials. These phenomena are also frequency dependent because all of these electric dipoles created by the electrical field in the material have various oscillation frequencies, and as they are brought closer to resonance the polarization phenomena takes precedence over dissipation phenomena so the so-called "constant" appears to increase slightly while at high frequencies the opposite is true.
The "static" dielectric constant is simply the dielectric constant related to the material behavior in low frequency or constant  electric fields, while high frequency "constant" should be by now self-explanatory. The difference is ..well- the material behavior, hence the numeric value... So to sum up: at high frequencies, you may encounter some insulators that start acting up strange, such as increasing losses in signal by  heating and "stealing"/flattening-distorting your signals ,because of the mechanisms discussed above,  and some insulators that for example do not distort or attenuate significantly; you may find unacceptable losses in some capacitors with dielectrics not suited for high frequencies and not so serious ones in high frequency capacitors..and so on.The phenomenon is extensively used in power supply filtering when naturally occurring high frequency rectifier noise is passed through large electrolytic caps that are not suitable to pass high frequencies, so they dissipate- and thus eliminate- the noise by heating up ...
So on the basis of these high frequency behaviors materials are used in various applications and avoided in others. Same precautions with temperature- some materials change dielectric behavior when heated or cooled.
  • asked a question related to Electronics Design
Question
5 answers
Hi All,
Could you please explain me how to measure the Early Voltage of a BJT experimentally in lab (Undergraduate Electronic Devices Lab)?
I am also interested to know the different parameters of a BJT (in addition to Early Voltage) that can be measured experimentally. The typical input and output characteristic curves are common experiments, but what additional measurements / observations can be added to these experiments with BJT?
Regards,
Raghu
Relevant answer
Answer
 The slope of the curve is not constant. Experimentally the slope of IC versus VCE in the active region increases linearly with the ICSAT. This is proved also by direct measure of the small signal parameters of the transistor including hoe which is 1/ rCE. To this fact please see the link:http://www.zen22142.zen.co.uk/Theory/tr_model.htm
So, VA is constant with ICSAT and the and the parameter which changes is the rCE. such that rCE =VA/ ICSAT.
There is also a theoretical proof of this relation
In the active region we can express the collector current by:
IC= qDdelta n/ wb with q the electronic charge, d the diffusion coefficient of the minority carriers in the base delta n is the excess minority electrons at the edge of the base region adjacent to the emitter. and Wb is is the neutral base width.
If VCE increases Wb decreases and the slope of the excess minority carrier increases causing the early effect by increasing the collector current above its maturation value
Accordingly one can express IC as
IC= ICSAT( 1 + VCE/VA), DIFFERENTIATING THIS RELATION WE GET tCE= VA/ ICSAT.
wish you success. If you wish we can discuss the other spice parameters of the BJT.
  • asked a question related to Electronics Design
Question
3 answers
In differential LVDS clock, signals on output pins are equal and opposite in polarity and hence get added at the receiver end. but when I add a AC coupling capacitor to each pin of driver IC  to shift the switching threshold at receiver, then one signal at receiver side changes its polarity, hence no more a differential pair. I don't figure it out that how signal polarity get changes with deploying a capacitor. A capacitor is only suppose to change the dc level of  signal.
Relevant answer
Answer
Hello,
if your intention is to isolate transmitter and receiver (my best guess) you need capacitors of the appropriate value in BOTH lines. This works - it has been done before - but requires a DC balanced signal line (meaning your clock may not stop at any time). And it may take a bit of time after power-on to settle.
Real-world capacitors are far from ideal and any capacitor does interact with line capacitance, inductance and resistance - being much more than a simple, ideal isolator.
  • asked a question related to Electronics Design
Question
14 answers
Because I am not a native english speaker I am not quite sure about the difference (if any) between those two terms. Can anybody explain the difference in usage?
Relevant answer
As stated by earlier responders, I too feel that Current Starving means just barest minimum current possible.
I agree with Prof. Flavio Bettti's agreement with Mr. Marek's analogy for 'starvation': "just enough food to survive", where 'food' can be either current or voltage being fed to the device. The term was coined during the hey days of valves (vacuum tubes)
The following two articles are in support.
1.  International Journal on Cybernetics & Informatics ( IJCI) Vol.2, No.1, February 2013
.   DESIGN OF A LINEAR AND WIDE RANGE CURRENT STARVED VOLTAGE CONTROLLED OSCILLATOR FOR PLL
Mr. Madhusudan Kulkarni  and Mr. Kalmeshwar N Hosur
2.3. Current Starved Ring VCO
These VCOs are made by using ring oscillator. The ring oscillator works by controlling the
charging and discharging of the gate capacitance of the next inverter. Decreasing the peak available charging current increases the time to charge and discharge the gate capacitance; consequently, the frequency is decreased Ring oscillators generate
high frequency up to 10 GHz.
2.   WSEAS TRANSACTIONS on CIRCUITS AND SYSTEMS
         Current-Starved Pseudo-Floating Gate Amplifier
MEHDI AZADMEHR                                          YNGVAR BERG
                        Institute for Microsystems Technology
                                  Vestfold University College
                                   Raveien 197, 3184 Horten
                                                NORWAY
Abstract:
In this paper we present Current-Starved Pseudo-Floating Gate (CSPFG) inverters with capacitive feed-back. The analog CSPFG inverter suppresses low frequencies due to the active, local feedback. This inverter can be used in designing circuits and amplifiers where high frequency signal processing is the main goal. One good area of use is in filter design where a narrow band pass or reject filter is to be designed. Typical applications are detection of high frequency components in sensor signals, i.e. airbag sensors. AC simulation of the inverter is presented to show that the circuit is suited for high performance filter design. Linearity simulations of the analog
CSPFG inverters shows the good transient properties suited for amplifier design.
Key–Words:
Analog, CMOS, Floating gate, Inverter, Amplifier, Filter.
P.S.
  • asked a question related to Electronics Design
Question
3 answers
The careful selection of coatings and substrate materials based on the service exposure of electrical equipment and controls can improve the reliability and cost effectiveness of the entire system.
Relevant answer
Answer
How is Controlling Corrosion in Electronic Devices?
  1. Corrosion takes place in the final metalization layer of electronic devices such as ICs, and transistors.
  2. This is due to oxidation of metal layer. A cheaper solution is to use Nickel or chromium to minimize this effect. The best solution is to use gold or silver.
  3. Gold plating is used in high reliable products.
  • asked a question related to Electronics Design
Question
1 answer
I wish to know how we could place a pointer.
Relevant answer
Answer
Very Interesting question, similar to my case. Could you check one of the spesial journal in .... (lets me check first....)
  • asked a question related to Electronics Design
Question
10 answers
Since sometimes we don't have layout drawing tool for the given technology node (say 22 nm or 16 nm) .
And also it is very difficult to draw layout to determine these capacitance especially when we only concentrate on spice simulation of the circuit. Is there any analytical method  
Relevant answer
Answer
I would think that if you know the array size, you can do an estimate of the bit line and word line lengths. You can assume minimum width.
  • asked a question related to Electronics Design
Question
6 answers
I have a cantilever steel beam of 1m length. I want to determine the strain near fixation due to the bending moment of a dead weight on the tip of the beam. 
I plan to place 3 strain gauges near fixation and close to each other on the same line level.
I have some doubts about managing the data. Shall I take the average reading and consider it representative of the strain on the beam? 
I believe that each strain gauge measures the strain in the zone it is placed on.
Any ideas?
Relevant answer
Answer
Actually a strain gage gathers data about the exact place that you attached it on. So the data of a certain strain gage is the strain of that exact point. Even a strain gage also averages the strain over a finite length due to its own dimensions. So averaging three results might not be a good choice, maybe you can use results seperately and then you can have a strain distribution over the axis of your beam. Sincerely.
  • asked a question related to Electronics Design
Question
4 answers
How can I simulate a critical path with input pattern (how can I know the input pattern which simulate the critical path and)? 
Relevant answer
Answer
Dear Lan
Thank you!
I will try to learn the firmware.
Happy new year! 
  • asked a question related to Electronics Design
Question
1 answer
I am new on KiCad. I want to import libraries of AD8221, AD630AR, OP1177 in KiCad how can i do it?
Relevant answer
Answer
Find where the libs are installed in your package, typically it is
/usr/local/kicad/share/
Under windows it will be program files/kicad...
In the share directory there are a couple of directories
library = this is where the eeschema parts live
modules = this is where the PCBnew component outlines live
Now a word of warning, if you reinstall kicad, these directories will get
overwritten, so DO NOT store additional libs and modules directly in
them.
Create a couple of sub directories, mylibs and mymodules and put your
extra stuff in there.
Alternatively you can create these in your home directory and work from
there.
What you do next will depend on how you get the new packages. If they are
already in the form of a library then just put the libs and mods into the
correct folder and that's it.
If they are individual parts then you need to create a library and
import the part into it. Don't forget to save the lib.
You do the same thing with the modules.
Once that is done you then have to add the library to the project with
preference > library > add , you then select your new lib and it will then
become available to the project. You do the same thing with the modules
by using the same sequence when using PCBnew.
There is a section in the tutorial that describes the use of the libs and
modules. It is worth working through that a couple of times just to get
the hang of it.
  • asked a question related to Electronics Design
Question
5 answers
I am supposed to excite the bridge circuit with 1 kHz of frequency in order to get data from it. The variable part of it would be strain gauge. Can you suggest me which oscillator circuit I should use?
Relevant answer
Answer
Hello Mohammed,
It looks you are busy in finding solution for your multi- strain-gauge system. Use temperature stabilized FET based Wien-Bridge Oscillator. It would be much economical.
The DDS based solution as proposed by Tomasz is highly stable and accurate but will prove expensive. Besides the DDS circuit, you will have to add driver circuit for your 30 gauges after that.
So you have to think of the TRADE-OFF between stability and economy. Another aspect you need to consider is that if you drive from DDS, if that fails all your gauges are DOWN. Whereas with WB, you can easily make modules to replace in emergency.
Please do remain in touch in case you need any further help.
OR Contact me at prasanna(dot)waichal(@)fnu(dot)ac(dot(fj)
Best Luck!
-Prasanna Waichal
  • asked a question related to Electronics Design
Question
2 answers
Since few years the work on Fully Depleted SOI (FDSOI) device technology have been interestingly increased due to few Semiconductor Companies believed to have a reliable and cost-effective production with FDSOI in compare with FinFETs/bulk-CMOS (e.g. ST-Mircoelectronics co. in conjunction with CMP is already in production phase of FDSOI tech.).
1. So, if anyone could suggest the freely available predictive technology model (PTM) and/or Product Design Kit (PDK) either charge or surface potential based ; will be highly appreciable.
2. Is it even possible to have "charge-based" SOI/PD-SOI/FD-SOI technology models. Or all the companies are using "surface potential - based" such as PSP based models.
Thanks.
Relevant answer
Answer
Hi laurent, Thanks for your reply.
However, PTM(s) by Arizona state univ. with above links only provides MOSFETs and FinFETs but not FDSOI PTM/PDK. Anyways, I have done some research on finding FDSOI PTMs and would like to share here which probably be beneficial for others as well who are looking for it.
There are three PTMs available for FDSOI:
1) BSIM-IMG (University of California at Berkeley):
Comments:
a). Believed to have FDSOI PTM models based on BSIM group latest publications.
b). Not sure if it is Charge based or Surface-potential based
2) HiSIM (Hiroshima University)
Comments:
a) FDSOI and is PSP based model
3) PSP-SOI (Arizona State University)
Comments:
a) FDSOI and is PSP based model
--
Usman
  • asked a question related to Electronics Design
Question
8 answers
I need it for designing a low noise amplifier for it.
Relevant answer
Answer
hi, i am sending you paper that will solve all you issues regarding IR photo diode
  • asked a question related to Electronics Design
Question
3 answers
I want to work on Power Delivery Network of an electronic device (microprocessor/silicon chip). Please share your valuable suggestion and guidance to work on this field.
Thanks in advance for helping me.
Relevant answer
The following References may give an idea of Resarch Areas in Power Delivery Networks.
1. Challenges and Recent Research in On -Chip Power Delivery
By Eby G. Friedman
2. PDN in 3d Stacked Memory Devices
By Manjunath Shevgoor et al
3. Simulation and Optimization of On-Chip Power Delivery Networks and Clock Networks
By Dr. Sheldon Tan and his team
4. Understanding Voltage variations in Chip Multiprocessors using a Distributed Power Delivery Network
By Meeta S. Gupta et al.
5. High Performance Power Distribution Networks with On-Chip Decoupling Capacitors For Nano Scale Integrated Circuits.
Ph.D. Thesis of Mikhail Popovich.
1. Challenges and Recent Research in On -Chip Power Delivery
By Eby G. Friedman
2. PDN in 3d Stacked Memory Devices
By Manjunath Shevgoor et al
3. Simulation and Optimization of On-Chip Power Delivery Networks and Clock Networks
By Dr. Sheldon Tan and his team
4. Understanding Voltage variations in Chip Multiprocessors using a Distributed Power Delivery Network
By Meeta S. Gupta et al.
5. High Performance Power Distribution Networks with On-Chip Decoupling Capacitors For Nano Scale Integrated Circuits.
Ph.D. Thesis of Mikhail Popovich.
1. Challenges and Recent Research in On -Chip Power Delivery
By Eby G. Friedman
2. PDN in 3d Stacked Memory Devices
By Manjunath Shevgoor et al
3. Simulation and Optimization of On-Chip Power Delivery Networks and Clock Networks
By Dr. Sheldon Tan and his team
4. Understanding Voltage variations in Chip Multiprocessors using a Distributed Power Delivery Network
By Meeta S. Gupta et al.
5. High Performance Power Distribution Networks with On-Chip Decoupling Capacitors For Nano Scale Integrated Circuits.
Ph.D. Thesis of Mikhail Popovich.
P.S.
  • asked a question related to Electronics Design
Question
5 answers
.
Relevant answer
Answer
Ohh - I think, LT stands for "Linear Technology", does it not?