Z. Dibi’s research while affiliated with Larbi Ben M'hidi University of Oum El Bouaghi and other places

In this paper, a new ion selective tunneling field effect transistor (IS TFET) based on double gate (DG) aspect and SiSn-Si-Si heterojunction channel is proposed. The device is numerically modeled based on band-to-band tunneling model (BTBT) using ATLAS 2-D simulator. The effect of SiSn alloy as a source region in DG TFET platform on the pH sensor performance is investigated. It is found that the use of 40% Sn containing in SiSn source region can allow achieving a high sensitivity of 86 mV/pH, far surpassing the Nernst Limit (59 mV/pH). This enhancement can be attributed to the role of the Sn concentration in reducing the tunneling barrier at the source/channel interface, leading to modulate the pH sensitivity characteristics. Furthermore, the impact of various high-k dielectric gate oxides such as Si3N4, Al2O3 and HfO2 on the device sensitivity is analyzed. Our analysis highlights the ability of the proposed pH sensor for offering a high sensitivity of 104.9 mV/pH, while maintaining a very low leakage current. Therefore, we believe that the present work can open up new pathways to develop highly-sensitive pH sensors with low power consumption using CMOS-compatible TFET platform.

In this work, a new high-performance broadband Infrared Optically Controlled Graphene Field-Effect Transistor (IR–OC–GFET) using strained black phosphorus sensing gate is proposed and investigated. The impact of the hydrostatic pressure on the optoelectronic properties of bulk Black Phosphorus (BP) is studied using density functional theory (DFT) calculations, including Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBE-GGA) and the screened hybrid (YS-PBE0) function with van der Waals correction. It is revealed that the electronic and the optical properties of BP were substantially affected by the pressure effects, where the band gap energy decreases with increasing the hydrostatic pressure. The phototransistor drain current is calculated by self-consistently solving the Schrödinger/Poisson equations based on Non-Equilibrium Green's function (NEGF) approach. The impact of strained BP sensing gate material on the device sensing properties is investigated. It is found that the proposed device with strained sensing gate provides enhanced optical performances over the middle infrared (Mid-IR) spectral band, making it a new potential alternative photoreceiver for chip-level optical communications.

Here we present a new broadband mid-Infrared (mid-IR) InGaZnO (IGZO) thin-film phototransistor (TF PT) based on both Black Phosphorus (BP) capping layer incorporating gold (Au) intermediate ultrathin-film. The electronic and optical properties of bulk BP are carried out using density functional theory (DFT) computations, including Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBE-GGA) and the screened hybrid (YS-PBE0) functionals with van der Waals correction. It is found that BP exhibits interesting performances for mid-IR optoelectronic applications, at room temperature. To enhance the absorption of the BP material for broadband mid-IR spectrum, a new strategy is proposed by optimizing the sensitive layer using finite-difference time-domain (FDTD) modeling and particle swarm optimization (PSO) approaches. The photoresponse properties of the optimized broadband mid-IR IGZO TF PT with BP/Au/BP capping layer are carefully analyzed. It is found that the proposed device shows high photodetection performances with a high current ratio exceeding 180 dB over a wide voltage window. Besides, it is revealed that the introduced ultrathin Au layer within BP enhances the absorbance capability over the mid-IR spectrum, which significantly improves the performance of the broadband mid-IR sensor. Therefore, the proposed approach based on combining DFT analysis with FDTD simulation supported by PSO optimization opens up a new strategy for the development of high-performance optoelectronic devices.

Electronic Nose, as an artificial olfaction system, has potential applications in environmental monitoring because of its proven ability to recognize and discriminate between a variety of different gases and odors. In this paper, we used a chemical sensor array to develop an electronic nose to detect and identify seven different gases (H2, C2H2, CH4, CH3OCH3, CO, NO2, and NH3). These gas sensors are chosen because of its hierarchical/doped nanostructure characteristics, which give them a very high sensitivity and low response time; we improve the linearity response and temperature dependence using models based on artificial neural networks. We used in Electronic nose a pattern recognition based on artificial neural network, which discriminates qualitatively and quantitatively seven gases and has a fast response.

Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double gate (DG) dielectric modulated (DM) junctionless (JL) metal oxide semiconductor field effect transistor (MOSFET) with triple material (TM) gate. Based on the dielectric modulation effect, DNA molecules in the nanogap cavity change due to the charge density of biomolecules, producing a change in the threshold voltage of the device. Analytical and numerical analysis was carried out to reveal the impact of physical parameters on the sensitivity of the proposed biosensor. Various characteristics, such as the surface potential, threshold voltage, and drain current were also investigated. The effectiveness of the proposed TM-DG-DM-JL-MOSFET structure with highly doped source/drain extensions is confirmed by comparison of the results with those for a conventional single-materiel (SM) gate DM-JL-MOSFET, revealing a good improvement in sensitivity and making the proposed structure an attractive solution for use in DNA-based sensor applications.