Yinong Zhou’s research while affiliated with University of Utah and other places

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Publications (18)


Growth of Mesoscale Ordered Two-Dimensional Hydrogen-Bond Organic Framework with the Observation of Flat Band
  • Article

January 2023

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148 Reads

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30 Citations

Physical Review Letters

Minghu Pan

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Yinong Zhou

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Feng Liu

Flat bands (FBs), presenting a strongly interacting quantum system, have drawn increasing interest recently. However, experimental growth and synthesis of FB materials have been challenging and have remained elusive for the ideal form of monolayer materials where the FB arises from destructive quantum interference as predicted in 2D lattice models. Here, we report surface growth of a self-assembled monolayer of 2D hydrogen-bond (H-bond) organic frameworks (HOFs) of 1,3,5-tris(4-hydroxyphenyl)benzene (THPB) on Au(111) substrate and the observation of FB. High-resolution scanning tunneling microscopy or spectroscopy shows mesoscale, highly ordered, and uniform THPB HOF domains, while angle-resolved photoemission spectroscopy highlights a FB over the whole Brillouin zone. Density-functional-theory calculations and analyses reveal that the observed topological FB arises from a hidden electronic breathing-kagome lattice without atomically breathing bonds. Our findings demonstrate that self-assembly of HOFs provides a viable approach for synthesis of 2D organic topological materials, paving the way to explore many-body quantum states of topological FBs.


Schematic illustration comparing three types of quantized charge and spin Hall effects. The upper panel shows the electronic states associated with each effect: (a) QHE featured with LLs and a chiral edge state (red). Each LL carries a Chern number C = 1. (b) QAHE, a Chern insulator state, featured with a topological gap between a dispersive VB of C = 1 and a dispersive CB of C = 0, and a chiral edge state in the gap (red). (c) QSHE, a topological insulator state, featured with a topological gap between a dispersive VB of spin Chern number C s = 1/2(C ↑ − C ↓) = 1 and a dispersive CB of C s =0, a pair of helical edge states in the gap (red and blue lines). The lower panel illustrates the quantized charge or spin Hall conductivity carried by topological edge states: (a) σ xy = 2 · e ²/h with two filled LLs (see upper panel). (b) σ xy = e ²/h for a Chern insulator with C = 1. (c) σxys=2·e/4π for a topological insulator with C s =1. Note that in (b,c), only bands of interest around Fermi level with their non-zero Chern number are labeled. If all VBs and CBs are present, the sum of their Chern numbers must equal zero.
Schematic illustration of the excited quantum anomalous Hall effect (EQAHE) and quantum spin Hall effect (EQSHE). The upper panel shows the electronic states associated with each effect: (a) ground-state of the system with yin-yang FBs. (b) Singlet excitonic state with a spin-up electron in the conduction FB and a spin-down hole in the valence FB induced by a σ ⁺-CPL. (c) Triplet excitonic state with a spin-up electron in the conduction FB and a spin-up hole in the valence FB. The quasi-Fermi level of electrons (holes) in the conduction (valence) band is labeled as EFc ( EFv ). The red/blue solid/dashed lines indicate the population of the edge states. The lower panel illustrates the quantized charge or spin Hall conductivity carried by topological edge states: (a) no edge states for the intrinsic semiconductor. (b) σ xy = −2 · e ²/h for EQAHE with an opposite-spin electron–hole pair created in yin-yang FBs of the opposite Chern number. (c) σxys=2·e/4π for EQSHE with a same-spin electron–hole pair created in yin-yang FBs of the same Chern number.
Creation of the yin-yang FBs in a diatomic Kagome lattice. (a) The diatomic Kagome lattice with a dumbbell (two atoms) on every Kagome lattice site. The shaded area indicates the unit cell. t 1, t 2, and t 3 represent the NN intra-dumbbell, 2NN inter-dumbbell and 3NN cross-dumbbell hopping, respectively. λ is the SOC strength. (b) The ideal band structure containing yin-yang FBs, obtained with t 1, t 2 = 0, t 3 = 0.3t 1 and λ = 0. The inset shows the first Brillouin zone. (c) Distribution of real-space wavefunction of the valence (yin) FB. Red and blue dots represent positive and negative phases of the wavefunction at the position, respectively. (d) Same as (c) for the conduction (yang) FB.
(a), (b) An sp ² hexagonal lattice (left, the shaded area indicates the unit cell) exhibiting yin-yang FBs (right), calculated with sp σ = −0.8ss σ, pp σ = −0.4ss σ, pp π = 0. The band gap between the two FBs E g = 3pp σ and the band width W = 3∣ss σ − pp σ/2∣. The inset shows the first BZ. (c) Lattice structures for the superatomic graphene lattice with the size of 9 × 9 times of the original graphene unit cell. (d) Typical yin-yang FBs of (c) with the molecular sp ² orbitals in a hexagonal lattice (similar to (a), (b)). The hopping appears to decay slowly due to the special lattice and orbital symmetry so as to meet the condition of t 3 > 0.5t 2 for realizing the yin-yang FBs in the dumbbell Kagome model.
(a) Energy of the CPI-EI state (E) with respect to vac state (E 0) as a function of relative dielectric constant (ϵ r ). Star symbol indicates the values for superatomic graphene lattice. Negative values indicate spontaneous formation of CPI-EI state. (b), (c) schematic comparison between (b) CPI in FB-EI state and (c) excitonic instability in parabolic-band EI state without CPI. In (b), the band width of the conduction FB is zero, all the excitons have a binding energy (E b ) exceeding the band gap (E g ) to allow for CPI. Fermi levels are assumed to be in the gap.
Excited quantum anomalous and spin Hall effect: dissociation of flat-bands-enabled excitonic insulator state
  • Article
  • Publisher preview available

July 2022

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160 Reads

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19 Citations

Quantum anomalous Hall effect (QAHE) and quantum spin Hall effect (QSHE) are two interesting physical manifestations of 2D materials that have an intrinsic nontrivial band topology. In principle, they are ground-state equilibrium properties characterized by Fermi level lying in a topological gap, below which all the occupied bands are summed to a non-zero topological invariant. Here, we propose theoretical concepts and models of “excited” QAHE (EQAHE) and EQSHE generated by dissociation of an excitonic insulator (EI) state with complete population inversion (CPI), a unique many-body ground state enabled by two yin-yang flat bands (FBs) of opposite chirality hosted in a diatomic Kagome lattice. The two FBs have a trivial gap in between, i.e., the system is a trivial insulator in the single-particle ground-state, but nontrivial gaps above and below, so that upon photoexcitation the quasi-Fermi levels of both electrons and holes will lie in a nontrivial gap achieved by the CPI-EI state, as demonstrated by exact diagonalization calculations. Then dissociation of singlet and triplet EI state will lead to EQAHE and EQSHE, respectively. Realization of yin-yang FBs in real materials are also discussed.

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High-temperature fractional quantum Hall state in the Floquet kagome flat band

April 2022

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59 Reads

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19 Citations

Physical review. B, Condensed matter

A fractional quantum Hall effect (FQHE) has been predicted in a topological flat band (FB) by a single-particle band structure combined with phenomenological theory or solution of a many-body lattice Hamiltonian with fuzzy parameters. A long-standing roadblock toward the realization of a FB-FQHE is lacking the many-body solution of specific materials under realistic conditions. We demonstrate a combined study of single-particle Floquet band theory with exact diagonalization (ED) of a many-body Hamiltonian. We show that a time-periodic circularly polarized laser inverts the sign of second-nearest-neighbor hopping in a kagome lattice and enhances spin-orbit coupling in one spin channel to produce a Floquet FB with a high flatness ratio of bandwidth over band gap, as exemplified in monolayer Pt 3 C 36 S 12 H 12. The ED of the resultant Floquet-kagome lattice Hamiltonian gives a one-third-filling ground state with a laser-dependent excitation gap of a FQH state, up to an estimated temperature above 70 K. Our findings pave the way for exploring the alluding high-temperature FB-FQHE.


Figure 2
Synthesis of Mesoscale Ordered Two-dimensional Hydrogen-Bond Organic Framework with the Observation of Flat Band

April 2022

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212 Reads

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1 Citation

Flat bands (FBs), presenting a strongly interacting quantum system have drawn increasing interest recently, as partly reflected by its discovery in twisted bilayer graphene in association with superconductivity. However, experimental realization of topological FBs has been hampered by lacking FB materials, and especially remained elusive in the ideal platform of monolayer materials where they arise from destructive quantum interference as predicted in 2D lattice models. Here, we report experimental synthesis of mesoscale ordered self-assembled monolayer of 2D hydrogen-bond (H-bond) organic frameworks (HOFs) of 1,3,5-tris(4-hydroxyphenyl)benzene (THPB) on Au(111) surface and the observation of related topological FB. Its formation, atomic and electronic structures have been characterized with a suite of experimental and theoretical techniques in excellent agreement. High-resolution scanning tunneling microscopy/spectroscopy (STM/STS) shows mesoscale, highly-ordered and uniform THPB-HOF domains, while angle-resolved photoemission spectroscopy (ARPES) highlights a FB over the whole Brillouin zone (BZ). Density-functional-theory (DFT) calculations and analyses reveal that the observed topological FB arises from a hidden electronic breathing-Kagome lattice without atomically breathing bonds. Our findings demonstrate that self-assembly of HOFs provides a viable approach for synthesis of 2D organic topological materials, paving the way to explore many-body quantum states of topological FBs.


Flat-Band-Enabled Triplet Excitonic Insulator in a Diatomic Kagome Lattice

May 2021

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91 Reads

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77 Citations

Physical Review Letters

The excitonic insulator (EI) state is a strongly correlated many-body ground state, arising from an instability in the band structure toward exciton formation. We show that the flat valence and conduction bands of a semiconducting diatomic Kagome lattice, as exemplified in a superatomic graphene lattice, can possibly conspire to enable an interesting triplet EI state, based on density-functional theory calculations combined with many-body GW and Bethe-Salpeter equation. Our results indicate that massive carriers in flat bands with highly localized electron and hole wave functions significantly reduce the screening and enhance the exchange interaction, leading to an unusually large triplet exciton binding energy (∼1.1 eV) exceeding the GW band gap by ∼0.2 eV and a large singlet-triplet splitting of ∼0.4 eV. Our findings enrich once again the intriguing physics of flat bands and extend the scope of EI materials.


FIG. 1. (a),(b) STM images of typical ST-like Bi islands formed on InSb(111)B substrate at θ ≈ 2 ML. See Sec. S1 for details. (c) Schematic for different island height levels corresponding to the labels in (a),(b). (d),(e),(f) Height profiles for red, blue, and pink lines A, B, and C in (b), respectively.
FIG. 4. DFT chemical potentials μ (the energy per Bi atom relative to gas phase) versus lateral lattice parameter b for freestanding (a) 1-, (b) 2-, (c) 3-, and (4) 4-ML Bi slabs. Interlayer spacings (d 1 , d 2 , and d 3 ) for 2-, 3-, and 4-ML slabs, as well as magnetic moments m for 1 ML in (a) and chain in the inset of (a), are also plotted. For details, see Sec. S3.2.
FIG. S4. STM images showing the surface morphologies with the ST-like Bi islands grown on InSb(111)B surface for different surface regions. Island height levels are labelled (see the main text for explanation). (a) Image size: 50 nm × 50 nm; í µí°¼í µí°¼ = 100 pA and í µí±‰í µí±‰ = +1.10 V; coverage: í µí¼ƒí µí¼ƒ ≈ 1 ML. (b) Image size: 50 nm × 50 nm; coverage: í µí¼ƒí µí¼ƒ ≈ 1 ML; í µí°¼í µí°¼ = 100 pA and í µí±‰í µí±‰ = +1.01 V. Note that there is an InSb step along the diagonal direction from lower left to upper right in this image. (c) Image size: 30 nm × 30 nm; coverage: í µí¼ƒí µí¼ƒ ≈ 2 ML; í µí°¼í µí°¼ = 100 pA, í µí±‰í µí±‰ = +1.10 V. (d) Image size: 28 nm × 28 nm; coverage: í µí¼ƒí µí¼ƒ ≈ 2 ML; í µí°¼í µí°¼ = 100 pA and í µí±‰í µí±‰ = +1.00 V. (e) Image size: 28 nm × 28 nm; coverage: í µí¼ƒí µí¼ƒ ≈ 1 ML; í µí°¼í µí°¼ = 100 pA and í µí±‰í µí±‰ = +1.02 V. (f) Image size: 15 nm × 15 nm; coverage: í µí¼ƒí µí¼ƒ ≈ 2 ML; í µí°¼í µí°¼ = 100 pA and í µí±‰í µí±‰ = +1.00 V. For all these STM images, í µí±‡í µí±‡ dep ≈ 423 K, and í µí±¡í µí±¡ cool ≈ 1 h (see Sec. S1 for explanations).
Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

April 2021

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503 Reads

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37 Citations

Physical Review Letters

Deposition of Bi on InSb(111)B reveals a striking Sierpiński-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30% to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.


FIG. 4. Conduction and valence FBs wavefunction overlap for zero momentum singlet exciton (Q = 0). Right: C and H atoms are indicated by large and small circles respectively. The contributions are only from the C p z orbitals. The overlapped weights of these contributions to flat valence and conduction bands wavefunctions are indicated by the size of red fills on the C atoms. Left: k-points in BZ for which overlaps are calculated.
FIG. 5. Individual excitation contribution to EI o . The band structure in (a) has the valence and conduction bands numbered, according to which we label the excitations. The excitation 1→1 is shown for reference. In (b), (c), (d), (e) and (f) we plot the contribution of excitations corresponding to 1→1 , 2→2 , 3→3 , 1→2 , and 2→1 respectively. There is a complete population inversion between the lower Kagome bands to upper enantiomorphic Kagome bands. At the Γ point in the first BZ, the bands 1 (1 ) and 2 (2 ) are degenerate for conduction (valence) bands, which causes a slight decrease in the contribution of excitations 1→1 and 2→2 at Γ point. This is compensated by the excitations 1→2 and 2→1 which contribute only at Γ point. Contributions from other excitations are negligible and hence not shown here.
FIG. 8. Interband absorbance for first few transitions plotted over the first BZ for transitions labeled according to numbers shown in Fig. 5(a). The dipole matrix element for flat band transitions (1 → 1 ) is negligible.
Flat-Bands-Enabled Triplet Excitonic Insulator in a Di-atomic (Yin-Yang) Kagome Lattice

February 2021

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147 Reads

The excitonic insulator (EI) state is a strongly correlated many-body ground state, arising from an instability in the band structure towards exciton formation. We show that the flat valence and conduction bands of a semiconducting diatomic Kagome lattice, as exemplified in a superatomic graphene lattice, conspire to enable an interesting triplet EI state, based on density functional theory (DFT) calculations combined with many-body GW and Bethe-Salpeter Equation (BSE). As an intrinsic property of topological flat bands, massive carriers with highly localized electron and hole wavefunctions significantly reduce the screening and enhance the exchange interaction, leading to an unusually large triplet exciton binding energy (~1.1 eV) exceeding the GW band-gap by ~0.2 eV and a large singlet-triplet splitting of ~0.4 eV. Our findings enrich once again the intriguing physics of at bands and extend the scope of EI materials.


Realization of an Antiferromagnetic Superatomic Graphene: Dirac Mott Insulator and Circular Dichroism Hall Effect

December 2020

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58 Reads

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27 Citations

Nano Letters

Using first-principles calculations, we investigate the electronic and topological properties of an antiferromagnetic (AFM) superatomic graphene lattice superimposed on a bipartite honeycomb lattice governed by Lieb's theorem of itinerant magnetism. It affords a concrete material realization of the AFM honeycomb model with a Dirac Mott insulating state, characterized by a gap opening at the Dirac point due to inversion symmetry breaking by long-range AFM order. The opposite Berry curvatures of the K and K′ valleys induces a circular dichroism (CD) Hall effect. Different from the valley Hall effect that activates only one valley, the CD Hall effect activates carriers from both K and K′ valleys, generating the opposite directions of transversal Hall currents for the left- and right-handed circularly polarized light, respectively.


π-Orbital Yin–Yang Kagome bands in anilato-based metal–organic frameworks

November 2020

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33 Reads

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18 Citations

Physical Chemistry Chemical Physics

π-Orbital bonding plays an important role not only in traditional molecular science and solid-state chemistry but also in modern quantum physics and materials, such as the relativistic Dirac states formed by bonding and antibonding π-bands in graphene. Here, we disclose an interesting manifestation of π-orbitals in forming the Yin–Yang Kagome bands, which host potentially a range of exotic quantum phenomena. Based on first-principles calculations and tight-binding orbital analyses, we show that the frontier π2- and π3-orbitals in anilato-based metal–organic frameworks form concurrently a conduction and valence set of Kagome bands, respectively, but with opposite signs of lattice hopping to constitute a pair of enantiomorphic Yin and Yang Kagome bands, as recently proposed in a diatomic Kagome lattice. The twisted configuration of neighboring benzene-derived organic ligands bridged by an octahedrally O-coordinated metal ion is found to play a critical role in creating the opposite sign of lattice hopping for the π2- versus π3-orbitals. Our finding affords a new material platform to study π-orbital originated quantum chemistry and physics.


Giant intrinsic circular dichroism of enantiomorphic flat Chern bands and flatband devices

September 2020

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64 Reads

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33 Citations

Circular dichroism (CD) is generally observed in the optically active chiral molecules that originate from macroscopic electric and magnetic dipoles, which is usually quite small. In solid states, the so-called valley CD may arise microscopically from interband transitions between two chiral electronic valley bands of nonzero Berry curvatures at a given k point. However, generally, two sets of K and K′ valleys coexist in the Brillouin zone with opposite chiral selectivities, so that the net CD is zero for the whole material. Here, we demonstrate a giant CD originating from photoexcitation between two chiral Chern flat bands of opposite Chern numbers, namely, the enantiomorphic flat Chern bands. The dissymmetry factor g of such flat CD can reach the theoretical maximum value of 2 with the optimal spin-orbit coupling strength. Based on first-principles calculations, we identify that the Li intercalated bilayer π-conjugated nickel-bis(dithiolene) hosts a set of yin-yang kagome bands with an estimated large g=0.74 under magnetic field. Furthermore, based on the flat-CD mechanism, we propose two flatband devices of topological photodetectors and circularly polarized lasers.


Citations (12)


... When an electronic flat band lies at the Fermi level, it makes the electronic ground state unstable toward ordered phases such as unconventional superconductivity 21 , quantum magnetism, integer 22 and fractional quantum anomalous Hall effect 23 , and anomalous Landau levels 24 . Due to these unique characteristics of electronic flat bands, significant efforts are directed toward realizing flat bands not only in crystalline solids 3,7,8,[25][26][27][28] but also in photonic lattices 29,30 , phononic 31 and magnonic crystals 32 , and metal-organic frameworks 33 . Therefore, exploring new ways to construct electronic flat bands and broadening the materials platform that can host such states is a timely challenge and opportunity for quantum material research. ...

Reference:

Hund flat band in a frustrated spinel oxide
Growth of Mesoscale Ordered Two-Dimensional Hydrogen-Bond Organic Framework with the Observation of Flat Band
  • Citing Article
  • January 2023

Physical Review Letters

... [32][33][34] Giant circular dichroism and excited QAHE are potentially exhibited in Yin-Yang kagome bands. 35,36 Despite the lattice models and the formation mechanisms being proposed, 37 the specific materials capable of realizing Yin-Yang kagome bands and tunable QAHE have been limited. ...

Excited quantum anomalous and spin Hall effect: dissociation of flat-bands-enabled excitonic insulator state

... Whereas it is predicted that reducing the dimensionality of a magnetic kagome metal to monolayer and few-layers yields a non-trivial Chern insulator with a chiral edge state that could support an intrinsic quantum anomalous Hall effect and lossless transport of electrons 22 . Further, the fractional quantum Hall state is also predicted to arise in monolayer and few-layer kagome systems due to the flat band feature 23 . However, whether flat band states persist in ultra-thin kagome metals remains elusive to experimental observation. ...

High-temperature fractional quantum Hall state in the Floquet kagome flat band
  • Citing Article
  • April 2022

Physical review. B, Condensed matter

... The ab initio GW plus Bethe-Salpeter equation (GW-BSE) approach, which is based on manybody perturbation theory, combines the GW self-energy (where G and W denote the one-particle Green's function and the screened Coulomb interaction, respectively) with the resulting electron-hole interaction kernel to solve the BSE 33,34 to describe exciton states. This method has proven accurate in describing excitonic phenomena across various materials and has been applied to study the unusually large binding energies of excitons in some EI candidates 35,36 . In our GW and GW-BSE calculations of the BI phase of monolayer 1 ! ...

Flat-Band-Enabled Triplet Excitonic Insulator in a Diatomic Kagome Lattice
  • Citing Article
  • May 2021

Physical Review Letters

... Fractals are self-similar structures (i.e., next generation of a fractal can be constructed by combining copies of its previous generation) widely represented in universe 1 , whose unusual internal composition finds its manifestation in new physical phenomena observed in solid-state physics, acoustics, and photonics, to mention just a few areas [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] . One of the distinguishing characteristics of a fractal is its fractional dimension, which can be described by the non-integer effective Hausdorff dimension d f ¼ log ' m, where m is the number of previous-generation elements required to construct next-generation fractal, while ℓ is the factor, by which length of the fractal edge would increase in the next generation. ...

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Physical Review Letters

... The tight-binding description based on a single orbital in each of the three lattice points renders two sets of dispersive Dirac bands and a flat band touching the Dirac bands. In real materials, the situation becomes more involved, since long-range interactions, which require inclusion of next-neighbor hoppings, may affect quantum interference and induce dispersion in the flat band [13]. In addition, realistic cases usually correspond to multiorbital systems with multiple hoppings [14]. ...

π-Orbital Yin–Yang Kagome bands in anilato-based metal–organic frameworks
  • Citing Article
  • November 2020

Physical Chemistry Chemical Physics

... The enhancement of the Coulomb repulsion at half filling leads to phase transitions from a semimetal to an AFM Mott insulator. This condition can be achieved in a superatomic honeycomb lattice with each site occupied by a magnetic superatom [39]. The honeycomb lattice achieves perfect AFM alignment and it assumes that spin polarizations are opposite for different sublattices. ...

Realization of an Antiferromagnetic Superatomic Graphene: Dirac Mott Insulator and Circular Dichroism Hall Effect
  • Citing Article
  • December 2020

Nano Letters

... A topological flat band (TFB) refers to dispersionless energy bands spanning the entire Brillouin zone, believed to be crucial for realizing fractional topological states without Landau levels [38][39][40]. Starting with Lieb's work on the Hubbard model [41] and subsequently extended by Mielke [42] and Tasaki [43], research has expanded to include various lattice models based on line-graph construction [42,44,45], such as the kagome [38,45], Lieb [41,46], breathing-kagome [47][48][49], diatomic-kagome [50], coloring-triangle [51], and diamond-octagon lattices [52], as well as more recent studies on square and honeycomb lattices [53][54][55][56]. These advances have established material physics as a promising platform for realizing non-trivial physical phenomena such as excitonic insulator state [57], and the excited quantum anomalous/spin Hall effect [58]. ...

Giant intrinsic circular dichroism of enantiomorphic flat Chern bands and flatband devices
  • Citing Article
  • September 2020

... In a similar manner to Landau levels, the strong electron correlations in flat bands can induce high-temperature superconductivity 8 , the fractional quantum Hall effect 9,10 , unconventional ferromagnetism 11 , and Mott insulator phases 12,13 . Interestingly, constructing a kagome lattice on each face of a polyhedron, such as in a pyrochlore network, can induce three-dimensional (3D) destructive interference of electrons, resulting in 3D flat band states at every out-of-plane (k z ) momentum position [14][15][16] . This could potentially give rise to new higher-order correlated phenomena including fractionalized topological states 17 , but to date, experimental realization of 3D flat bands is limited 14,15 , and whether they can be realized in a quasi-2D kagome material remains elusive. ...

Weyl points created by a three-dimensional flat band
  • Citing Article
  • May 2019

... The signicant attention devoted to the exploration of twodimensional (2D) materials traces its origins to the discovery of hexagonal graphene nanosheets with a few layers. 1 These materials present compelling advantages, including nanoscale structures featuring expansive interlayered void spaces to facile ion transport channels, augmented surface area, and remarkable electrical, optical, mechanical, chemical, and thermal characteristics. [2][3][4][5][6] In recent years, there has been a surge in interest in creating nanocomposites by combining 2D materials with nanostructured metal oxides. [7][8][9] This strategy aims to amplify specic physical or optical properties tailored for particular applications. ...

Band gap reduction in van der Waals layered 2D materials via de-charge transfer mechanism
  • Citing Article
  • August 2018

Nanoscale