Yaoyao Long’s research while affiliated with Georgia Institute of Technology and other places

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Publications (10)


Fig. 2. (a) SEM image of a fabricated AlN-on-Si annulus resonator (b) 2.5 mm × 2.5 mm AlN gyroscope die was placed next to a US quarter for size comparison [20].
Fig. 3. ADEV plot and pictures of the AlN-on-Si piezoelectric MEMS gyroscopes and the reference IMU at room temperature in ambient air.
Fig. 6. Flowchart of developing ML models for MEMS gyroscope calibration.
Fig. 7. Feature correlation matrix of the gyroscope output signals (features).
Fig. 8. Gyroscope output signals (features) importance and correlation to the rotation rate.

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MEMS Gyroscope Multi-Feature Calibration Using Machine Learning Technique
  • Preprint
  • File available

October 2024

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97 Reads

Yaoyao Long

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Zhenming Liu

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Cong Hao

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Farrokh Ayazi

Gyroscopes are crucial for accurate angular velocity measurements in navigation, stabilization, and control systems. MEMS gyroscopes offer advantages like compact size and low cost but suffer from errors and inaccuracies that are complex and time varying. This study leverages machine learning (ML) and uses multiple signals of the MEMS resonator gyroscope to improve its calibration. XGBoost, known for its high predictive accuracy and ability to handle complex, non-linear relationships, and MLP, recognized for its capability to model intricate patterns through multiple layers and hidden dimensions, are employed to enhance the calibration process. Our findings show that both XGBoost and MLP models significantly reduce noise and enhance accuracy and stability, outperforming the traditional calibration techniques. Despite higher computational costs, DL models are ideal for high-stakes applications, while ML models are efficient for consumer electronics and environmental monitoring. Both ML and DL models demonstrate the potential of advanced calibration techniques in enhancing MEMS gyroscope performance and calibration efficiency.

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A Low Phase Jitter MEMS Oscillator With Centrally Anchored Piezoelectric Resonator for Wide Temperature Range Real-Time Clock Applications

October 2024

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21 Reads

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control

This paper describes prototype temperature compensated piezoelectric MEMS oscillators operating in the wide temperature range of -40 °C to 85 °C for RTC applications. The AlN-on-Si resonator is centrally anchored at one point and designed for low power operation with a wide frequency tuning range of 5000 ppm. The oscillators exhibit a stable sinusoidal output at about 497 kHz frequency for time keeping applications with an integrated phase jitter being 10× better than the best commercially available MEMS RTC oscillators for supplementary use in portable devices for clocking audio circuits. The measured oscillator performance remains relatively unchanged when comparing the wafer level packaged capped MEMS resonator with the uncapped one, showing great potential for a high performance low-power RTC oscillator.


Fig. 1 | Bulk acoustic wave disk gyroscope in 4H-silicon carbide. a Resonant gyroscope design on the silicon carbide-on-insulator platform and b its cross-section illustration with thicknesses of each layer. c The operational mode-shapes, the gyroscopic m = 3 bulk acoustic wave modes are coupled to each other through the Coriolis effect. The electrode layout is designed accordingly, where V drv is the driving electrode; I drv is the drive mode current output electrode; I sns+/− are the sense mode differential current output electrode; T 1/2 and Q a/b are the two frequency tuning and quadrature nulling electrodes, respectively; Vp is the polarization electrode. d The inset shows the deformation in the decoupling folded beam to isolate the acoustic wave from the central anchor. e Optical photograph of the fabricated device wirebonded onto a printed circuit board (reproduced from ref. 16), the silicon carbide resonator is transparent and can be seen through in the optical picture. f The interface electronic architecture for the silicon carbide gyroscope, the abbreviations stand for the following: TIA transimpedance amplifier, LPF low pass filter, PLL phase lock loop, PID Proportional Integral Derivative controller, Diff. differential amplifier, R f feedback resistor.
Fig. 2 | Comparison between silicon and silicon carbide. a The cubic stricture single crystalline silicon (SCS) lattice and hexagonal lattice in 4H-silicon carbide. b The displacement amplitude at the edge of the resonator of the m = 3 mode in single crystalline silicon and 4H-SiC. c The m = 3 mode in (100) silicon and 4H-silicon carbide, with a zoom-in view to show the uniformity difference in the net displacement at the center anchoring point. d The Akhiezer limit in silicon carbide,
Fig. 3 | Processed silicon carbide-on-insulator wafer and devices. Figure reproduced from ref. 16. a A process 4" silicon carbide-on-insulator wafer with various resonator designs, some of them have backside openings in the silicon handle layer, which can be seen through from the transparent silicon carbide device layer on top. b Bird view scanning electron microscopy showing the 3 mm silicon carbide disk resonant gyroscope. c, a Zoomed-in view of the decoupling network at the resonator
Fig. 4 | Frequency response measurement. a The statistical data of the center frequency: f1, f2 of each m = 3 mode, b frequency split Δf, c Q-factor: Q1,Q2 of each mode and d Q-factor split, ΔQ, measured in 10 identical m-3 bulk acoustic wave (BAW) disk gyroscopes randomly selected from two SiCOI wafers. e The detailed frequency response of device #10, using data reproduced from ref. 16, the direct response is the drive mode output, and the indirect response is the differential readout from two sense mode output. the as-born device has a frequency split of 9.3 ppm, and the motional impedance (Ω motional ) was measured to be 216 kΩ, f upon mode matched, the two frequency overlaps and the cross-mode isolation is above 45 dB, with a mode-matched Q (Q matched ) of 1.7 million at room temperature. g The ovenized resonator shows a mode-matched Q of 4.6 million at 80 °C, and cross-
The 4H-silicon carbide bulk acoustic wave disk gyroscope performance matrix
4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation

June 2024

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57 Reads

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3 Citations

Communications Engineering

Zhenming Liu

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Yaoyao Long

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Charlotte Wehner

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[...]

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Farrokh Ayazi

Inertial navigation on a chip has long been constrained by the noise and stability issues of micromechanical Coriolis gyroscopes, as silicon, the dominant material for microelectromechanical system devices, has reached the physical limits of its material properties. To address these challenges, this study explores silicon carbide, specifically its monocrystalline 4H polytype, as a substrate to improve gyroscope performance due to its low phonon Akhiezer dissipation and its isotropic hexagonal crystal lattice. We report on low-noise electrostatic acoustic resonant gyroscopes with mechanical quality factors exceeding several millions, fabricated on bonded 4H silicon carbide-on-insulator wafers. These gyroscopes operate using megahertz frequency bulk acoustic wave modes for large open-loop bandwidth and are tuned electrostatically using capacitive transducers created by wafer-level deep reactive ion etching. Experimental results show these gyroscopes achieve superior performance under various conditions and demonstrate higher quality factors at increased temperatures, enabling enhanced performance in an ovenized or high-temperature stabilized configuration.


Figure 6. Long-term stability of 1100 μm long DC beam resonators with widths of 17 μm, 7 μm, and 37 μm measured in a vacuum chamber over 35 days, with 50 data points collected per day. The standard deviation (σ) for each day's data is less than 0.1 ppm. Resonators with these dimensions were aged at a pre-aged temperature of 100℃ on the same die, with frequency shifts shown in (a) and quality factor changes in (c). In (b), frequency shifts of resonators with the same dimensions were aged at their local zero TCF points (100℃, 85℃, and 55℃) on different dies.
Figure 7. 4H-SiCOI substrate's low-temperature wafer-level fabrication process. (a) In-situ doped polysilicon forms electrode pads on the SiC surface. (b) A Cr/Au seed layer is used to create an electroplated Ni-hard mask for 4H-SiC DRIE. (c) The wafer undergoes PECVD SiO2 patterning followed by standard Bosch-process etching in the Si handle layer. (d) The final cross-sectional view of fabricated 4H-SiCOI substrate. die-level annealing at 1,100°C is performed for oxide densification and the formation of ohmic contacts between polysilicon and SiC.
Stress-Modulated Control of TCF and Frequency Shift in 4H-SiC Beam Resonators for Enhanced Thermal Stability

May 2024

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42 Reads

Precision time and frequency references are critical components in electronic devices, impacting sectors such as wireless communications, global positioning systems, and network synchronization. While quartz-based oscillators have historically dominated the market, micro-electromechanical systems (MEMS) resonators are emerging as potential successors, albeit with challenges related to thermal frequency drifts. This paper presents doubly-clamped beam resonators in monocrystalline 4H-silicon carbide (4H-SiC), showcasing a tunable local zero Temperature Coefficient of Frequency (TCF) across a wide temperature range. Our novel approach employs axial stress to counteract temperature-induced softening in the 4H-SiC beam, leveraging the unique attributes of a 4H-SiC on insulator (SiCOI) substrate with a silicon handle layer. By manipulating the beam’s geometrical dimensions, we demonstrate the capability to define the TCF turnover point from -20°C to 100°C and tailor the overall frequency shift. The fabrication process ensures strong covalent interlayer bonds in the 4H-SiCOI substrate, eliminating frequency hysteresis and enhancing yield and stability metrics. We conducted comprehensive short- and long-term stability tests, showing that our resonators exhibit negligible frequency hysteresis across temperature cycles and exceptional long-term stability. Our findings enrich the current understanding of 4H-SiC MEMS resonator thermal stability and pave the way for future innovations in timekeeping and frequency reference technologies. This study underscores the potential of stress-modulated 4H-SiC resonators as reliable, efficient, and versatile instruments for advanced precision timing applications.





Fig. 2| Comparison between silicon and silicon carbide. a, the cubic stricture single crystalline silicon lattice and hexagonal lattice in 4H-SiC b, the displacement amplitude at the edge of the resonator of the m=3 elliptical mode in single crystalline silicon and 4H-SiC. c, the m=3 elliptical mode in (100) silicon and 4H-SiC, with a zoom-in view to show the uniformity difference in the net displacement at the center anchoring point. d, the Akhiezer limit in silicon, silicon carbide, and other common materials. e, the temperature-dependent specific heat and thermal conductivity value in silicon and silicon carbide from reference [20], [23]. f, with thermal properties from different references [20], [23], [26], [46], the simulated Q TED vs. temperature of the similar design in silicon and 4H-SiC
4H Silicon Carbide Bulk Acoustic Wave MEMS Gyroscope with Ultra-High Q for On-Chip Inertial Navigation

July 2023

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89 Reads

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1 Citation

Inertial navigation on a chip has been an unfulfilled dream limited by the noise and stability of micromechanical Coriolis gyroscopes. While silicon has been the mainstream material for microelectromechanical system (MEMS) devices, the performance of silicon MEMS gyroscope has come near the physical limit of its material properties. To overcome these limitations, we explore the potential of silicon carbide (SiC), specifically 4H-SiC, as a promising substrate for substantially enhancing MEMS gyroscope performance, owing to its small phonon Akhiezer dissipation and in-plane isotropic hexagonal crystal lattice. Here we report on low-noise electrostatic acoustic resonant gyroscopes with mechanical Q factors in excess of a few million fabricated on bonded 4H silicon carbide-on-insulator wafers. The reported gyroscopes use megahertz bulk acoustic wave (BAW) mode for wide open-loop bandwidth. The gyroscopes are actuated and tuned electrostatically using micron gaps defined by wafer-level deep reactive ion etching (DRIE). Experimental results indicated that these batch-fabricated SiC gyroscopes have very minimum inherent imperfections across wafers, and upon tuning, beyond-tactical grade gyroscope performance is achieved under various testing conditions. Moreover, we highlight the higher quality factor of the silicon carbide BAW resonators at higher temperatures, in contrast to conventional silicon devices. This characteristic enables temperature stabilization through ovenization while achieving better gyroscope performance. The 4H-SiC BAW gyroscopes demonstrated here are the first of their kind and pave the way for the use of 4H-SiC as a superior acoustic material for next-generation MEMS positioning, navigation, and timing (PNT) devices.


4H-Silicon Carbide as an Acoustic Material for MEMS

June 2023

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73 Reads

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14 Citations

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control

This article discusses the potential of 4H-silicon carbide (SiC) as a superior acoustic material for microelectromechanical systems (MEMS), particularly for high-performance resonator and extreme environments applications. Through a comparison of the crystalline structure along with the mechanical, acoustic, electrical, and thermal properties of 4H with respect to other SiC polytypes and silicon, it is shown that 4H-SiC possesses salient properties for MEMS applications, including its transverse isotropy and small phonon scattering dissipation. The utility and implementation of bonded SiC on insulator (4H-SiCOI) substrates as an emerging MEMS technology platform are presented. Additionally, this article reports on the temperature-dependent mechanical properties of 4H-SiC, including the temperature coefficient of frequency (TCF) and quality factor ( Q{Q} -factor) for Lamé mode resonators. Finally, the 4H-SiC MEMS fabrication including its deep reactive ion etching is discussed. This article provides valuable insights into the potential of 4H-SiC as a mechanoacoustic material and provides a foundation for future research in the field.


Citations (4)


... Incorporating these features is crucial, as they could provide valuable information about the state of the resonant modes. For instance, the device resonant frequency is able to indicate environment temperature, which alters the scale factor in MEMS gyroscopes [17]; phase error in PLL can reflect signal frequency error [18]; and the quadrature signal signifies bias instability [19]. Therefore, the ability to handle complex and high-dimensional data of ML can offer significant advantages in the MEMS gyroscope calibration area, enhancing performance, reliability, and efficiency. ...

Reference:

MEMS Gyroscope Multi-Feature Calibration Using Machine Learning Technique
4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation

Communications Engineering

... Additionally, geometric modifications offer a means to introduce compensating stresses within the resonator structure to counteract temperature-induced frequency shifts. By strategically designing the shape and dimensions of the resonator, it is possible to create internal stresses that change with temperature in a way that compensates for the temperature-induced frequency drift [6]. ...

4H-SiC Beam Resonators with Tailored Local Zero TCF
  • Citing Conference Paper
  • January 2024

... In 2018, Ko et al achieved the highest reported quality factor for the first disc resonator fabricated on a silicon carbide substrate (Ko et al. 2018). In 2024, Liu et al. fabricated the first silicon carbide body acoustic wave (BAW) gyroscope and achieved a bias instability of 0.34°/h (Liu et al. 2024). This result suggests that silicon carbide material is a reliable choice of gyroscope material. ...

TA 0.34Deg/Hour Bulk Acoustic Wave Gyroscope in 4H Silicon-Carbide with an Elevated-Temperature Enhanced Q-Factor of 4.6 Million
  • Citing Conference Paper
  • January 2024

... The phase velocity, which is the product of wavelength and resonance frequency, demonstrates an increase with wavelength. This phenomenon occurs because at longer wavelengths, the velocity rises due to greater coupling of the surface acoustic Sezawa mode into the SiC substrate, where the sound velocity of 4H-SiC (11,900 m/s) exceeds that of AlScN [33]. As a result, a maximum Sezawa velocity of 7,100 m/s was achieved at wavelength of 3.36 µm. ...

4H-Silicon Carbide as an Acoustic Material for MEMS
  • Citing Article
  • June 2023

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control