Xin Guo’s research while affiliated with South China Normal University and other places

What is this page?


This page lists works of an author who doesn't have a ResearchGate profile or hasn't added the works to their profile yet. It is automatically generated from public (personal) data to further our legitimate goal of comprehensive and accurate scientific recordkeeping. If you are this author and want this page removed, please let us know.

Publications (77)


In 0.5 Ga 0.5 N Nanowires with Surface Adsorbed Nonmetallic Atoms for Photoelectric Devices: A First-Principles Investigation
  • Article

November 2024

·

12 Reads

ACS Applied Nano Materials

·

Lei Liu

·

Zhidong Wang

·

[...]

·

Xin Guo


The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System
  • Article
  • Full-text available

October 2024

·

2 Reads

Photonics

Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein, the influence factors of the time-resolved characteristics of the AlGaN photocathode are researched by solving the photoelectron continuity equation and photoelectron flow density equation, such as the AlN/AlGaN interface recombination rate, AlGaN electron diffusion coefficient, and AlGaN activation layer thickness. The results show that the response time of the AlGaN photocathode decreases gradually with the increase in AlGaN photoelectron diffusion coefficient and AlN/AlGaN interface recombination rate, but the response time of the AlGaN photocathode gradually becomes saturated with the further increase in AlN/AlGaN interface recombination rate. When the thickness of the AlGaN photocathode is reduced from 250 nm to 50 nm, the response time of the AlGaN photocathode decreases from 63.28 ps to 9.91 ps, and the response time of AlGaN photocathode greatly improves. This study provides theoretical guidance for the development of a fast response UV detector.

Download








Citations (27)


... It can be seen that with increasing electric field intensity, the quantum efficiency of the nanopillars initially increases and then decreases. The inflection points for the three types of nanopillars differ due to the presence of built-in electric fields in heterojunction nanopillars [22,34]. Furthermore, S2 NPAs exhibit the highest QE, while S3 has the lowest QE. ...

Reference:

Photoelectric response of the variable component GaxIn1−xAsySb1−y nanopillar arrays under the gradient electric field
High light utilization of double-layer InxGa1−xN heterojunction nanowire array photocathodes
  • Citing Article
  • May 2024

Solar Energy

... As major semiconductor materials used in photoelectric devices, the calculation of the photoelectric properties is the next focus on research which is the key to improve the character of devices (Alonso-Orts et al. 2023;Cao et al. 2024). For the optical conductivity, the bandgap exhibits a strong relationship to the mole fraction of each metal component as shown in Fig. 3a (Sakalauskas et al. 2011;Liu et al. 2014). ...

Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays
  • Citing Article
  • January 2024

Optical Materials

... The core photodetector of the sun-blind UV missile alarm system mostly uses the solar-blind UV image intensifier [1,2], and the photocathodes for solar-blind UV signal detection are mainly Cs 2 Te photocathodes and AlGaN photocathodes. Compared with Cs 2 Te photocathodes, AlGaN photocathodes have the advantages of high quantum efficiency, good solar-blind characteristics, and adjustable response spectrum design [3][4][5] and are considered to be the most promising III-V group semiconductor photocathodes for realizing solar-blind UV signal photoelectric conversion [6][7][8][9][10][11]. ...

Enhanced photoemission performance of an AlGaN photocathode by a superlattice emission layer

... They incorporated gold splitring resonators embedded within the GaAs layer. Under plane wave excitation with polarization perpendicular to the split-ring resonators' opening direction, absorption exceeded 99% at 1360 nm [15]. Murata et al. utilized rhenium(I) complexes to explore and develop stable absorbers for the NIR region [16]. ...

Numerical study of a near-infrared to mid-infrared perfect absorber based on tunable GaAs metamaterial

... Therefore, it is necessary to utilize a detector with high sensitivity response that can be matched with a blue-green laser. Low-light-level vacuum detectors have the capability of enhancing extremely weak light and possess a series of advantages such as high resolution, high sensitivity and low noise [7][8][9][10]. As the core component of the vacuum detectors, the spectral response range and quantum efficiency of photocathodes directly affect the detection effect. ...

Modelling the Light Scattering Behavior of Transmission-Mode GaAs Photocathode Under the AlGaAs Window Layer Rough Surface

IEEE Photonics Journal

... There are rarely studied about relatively thick single-phase In x Ga 1-x N films [5,6]. In x Ga 1-x N alloys have garnered significant interest for their potential utilization in solar cells, nanowire array photocathodes, and high-efficiency light-emitting diodes (LEDs) [7][8][9][10][11][12]. In addition, In x Ga 1-x N LEDs can be combined with perovskites for white LED [13][14][15]. ...

InGaN nanowire array photocathode with high electron harvesting capability
  • Citing Article
  • March 2023

Optical Materials

... The core photodetector of the sun-blind UV missile alarm system mostly uses the solar-blind UV image intensifier [1,2], and the photocathodes for solar-blind UV signal detection are mainly Cs 2 Te photocathodes and AlGaN photocathodes. Compared with Cs 2 Te photocathodes, AlGaN photocathodes have the advantages of high quantum efficiency, good solar-blind characteristics, and adjustable response spectrum design [3][4][5] and are considered to be the most promising III-V group semiconductor photocathodes for realizing solar-blind UV signal photoelectric conversion [6][7][8][9][10][11]. ...

Surface plasmon-enhanced AlGaN heterojunction nanorod array photocathode
  • Citing Article
  • March 2023

Materials Science and Engineering B

... [6] Substantial efforts have been committed to improving the gas-sensitive properties, which mainly include element doping, modification of surface precious metals, construction of heterostructures, and ultraviolet (UV)/visible light excitation. [7][8][9][10][11][12] For instance, Molavi and Sheikhi synthesized Al-doped CuO nanostructures and obtained highly sensitive carbon monoxide gas sensors. [13] Wei et al. prepared Fe 2 O 3 /ZnFe 2 O 4 heterojunction porous nanocomposites that can detect 200 ppb triethylamine with better sensing performance than pure Fe 2 O 3 spindles. ...

A Plant‐inspired Light Transducer for High‐performance Near‐infrared Light Mediated Gas Sensing

... Based on this fundamental model, researchers have developed theoretical models applicable to different systems. Zhang et al. utilized a two-dimensional photoemission model and derived a tilted heterojunction nanowire array photocathode with a quantum efficiency of 81.2% at the critical incidence angle [27,28]. Similarly, Xia et al. investigated the quantum efficiency of a nano-array photocathode when exposed to varying incident photon energies by combining the two-dimensional continuity equation for semiconductors with the finite difference method. ...

NEA Surface AlGaN Heterojunction Tilted Nanowire Array Photocathode for Vacuum Electron Sources
  • Citing Article
  • March 2023

Journal of Materials Research and Technology

... The nanoarray structure has been prepared on the surface of GaAs photocathode, which effectively improved the light absorption of specific wavelength [28], but there are few researches on enhancing blue-green response of AlGaAs photocathode through nanostructure. In our previous work [29], the quadrangular prism or cylinder nanostructured surface of AlGaAs photocathode was designed for improving the optical absorption at 532 nm. The effects of the height of nanostructure and the angle of incident light on optical absorption were simulated. ...

Reflection-mode nanostructured GaAlAs photocathode with narrow-band response to 532 nm
  • Citing Article
  • January 2023

Modern Physics Letters B