Wencheng Fang's research while affiliated with Chinese Academy of Sciences and other places
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Publications (9)
High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the lithography process and the micro-loading effect in the...
Long‐term plasticity of bio‐synapses modulates the stable synaptic transmission that is quite related to the encoding of information and its emulation using electronic hardware is one of important targets for neuromorphic computing. Ge2Sb2Te5 (GST) based phase change random access memory (PCRAM) has become a strong candidate for complementary‐metal...
For improving the three-dimensional structure of phase-change memory devices, Ovonic threshold switch devices have received renewed attention as selectors owing to a simple production process, good scalability, and excellent performance. These can replace transistors and diodes in the available technology. Here, we have studied the GeSe-based chemi...
Pulse programming engineered phase change random access memories (PCRAM) as electronic synapses are attractive for high-performance neuromorphic computing. Pulse programming plays a key role to affect the synaptic plasticity of PCRAM electronic synapses. However, its principles and implementations are rarely reported. This work interprets the imple...
In this paper, GaGST films with different Ga contents were prepared by co-sputtering of Ge3.4Sb2.3Te5 target and Ga2Ge3.8Sb2.3Te5 target to obtain a high-speed and low-power phase change material. The present data emphasize that compared with Ge2Sb2Te5, Ga0.4Ge3.5Sb2.3Te5 exhibits a higher crystallization temperature(193°C) and better data retentio...
Chemical mechanical planarization (CMP) is receiving a growing interest in the fabrication of phase change memory in order to achieve a highly scaled confine cell structure and global planarization within...
Compared to the conventional phase change materials, the new phase change material Ta-Sb 2 Te 3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb 2 Te 3 were studied by using CF 4 /Ar. The results showed that when CF 4 /Ar = 25/25, the etching power was 600 W and the etc...
Citations
... In the past decade, researchers have made great efforts to "slow down" the crystallization, and doping is one of the most effective approaches. For example, the introduction of Ga effectively improves the thermal stability of the PCM glass [33,34], and the optimization of GST stoichiometry, such as Gerich GST material, could also enhance the amorphous phase [35][36][37][38]. ...
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