Tuğçe Ataşer’s research while affiliated with Gazi University and other places

Nb 2 O 5 thin films were deposited through sol-gel technique and then the films were annealed at temperature 300, 400, 500 and 600°C. The effect of annealing temperatures on the physical properties of the films was analyzed by several characterization techniques. Secondary ion mass spectroscopy analysis results indicated that uniform Nb and O distribution have formed throughout depth of the films deposited on substrates. The Atomic Force Microscope results observed that the increased temperature has resulted in increasing the surface roughness from 1.07 to 4.58 nm. The energy band gap (3.67–3.51 eV) was determined to be decrease with increase the annealing temperature. Therefore, considering the results of the both as-deposited at 150 ˚C and annealed films, it is clearly seen that as-deposited at 150 ˚C film has most uniform depth, a homogeneous surface and the highest optical band gap (at UV-A region). Therefore, the Al/Nb 2 O 5 Schottky diode was fabricated based on the as-deposited film. The current-voltage (I-V) characteristics of the diode were measured at room temperature and detail discussed. It has been observed that the diode has exhibited good rectifying behavior. The obtained experimental results showed that the as deposited Nb 2 O 5 thin film can be used in UV-A electro-optical applications.

The marketing of perovskite solar cells (PSCs) as an eco-friendly energy source can help with carbon footprint lowering. However, the traditional lead cation-based perovskites represent a concern to the environment due to the inclusion of lead. Life forms that are physically close to lead sources face a wide range of harmful effects. Owing to its excellent electrical arrangement and non-toxic quality, antimony (Sb) is frequently regarded as one of the potential lead substitutes. Herein, using SCAPS-1D software, we investigated the photovoltaic performance of Cs3Sb2I9-based solar cells employing Nb2O5 and CuI as efficient charge transport layers (CTLs). Thickness, doping, and band alignment of the absorber and both CTLs are thoroughly investigated. Besides, it has been studied how defects at the ETL/absorber and absorber/HTL interfaces as well as defects in the absorber's bulk might affect photovoltaic performance. In Addition, back contact properties are optimized to gain the best ohmic configuration to improve the collection mechanism. The optimized device presents an efficiency of 12.03% with a short-circuit current density of 10.57 mA/cm2, an open-circuit voltage of 1.37 V, and a fill factor of 82.63%. This simulation's results will facilitate the researchers to choose the appropriate CTLs for solar cells, which will demonstrate increased tolerance against interface defects by achieving optimal interface band alignment. These results will also be useful for determining the ideal values for defect parameters in a variety of real PSCs.