Sunil Suresh’s research while affiliated with University of British Columbia and other places

A N, N‐dimethylformamide and thiourea‐based route is developed to fabricate submicron (0.55 and 0.75 µm) thick CuIn(S,Se)2 (CISSe) thin films for photovoltaic applications, addressing challenges of material usage, throughput, and manufacturing costs. However, reducing the absorber film thickness below 1 µm in a regular CISSe solar cell decreases the device efficiency due to losses at the highly‐recombinative, and mediocre‐reflective Mo/CISSe rear interface. For the first time, to mitigate the rear recombination losses, a novel rear contacting structure involving a surface passivation layer and point contact openings is developed for solution processed CISSe films and demonstrated in tangible devices. An atomic layer deposited Al2O3 film is employed to passivate the Mo/CISSe rear surface while precipitates formed via chemical bath deposition of CdS are used to generate nanosized point openings. Consequently, Al2O3 passivated CISSe solar cells show an increase in the open‐circuit voltage (VOC) and short‐circuit current density when compared to reference cells with equivalent absorber thicknesses. Notably, a VOC increase of 59 mV contributes to active area efficiencies of 14.2% for rear passivated devices with 0.75 µm thick absorber layers, the highest reported value for submicron‐based solution processed, low bandgap CISSe solar cells.

This study investigates the incorporation of Ba2+ at a low concentration into CsPbI2Br, resulting in the formation of mixed CsPb1-xBaxI2Br perovskite films. Photovoltaic devices utilizing these Ba-doped CsPbI2Br (Ba-CsPbI2Br) perovskite films achieved a higher stabilized power conversion efficiency of 14.07% compared to 11.60% for pure CsPbI2Br films. First-principles density functional theory calculations indicate that the improved device performance can be attributed to the efficient transport of conduction electrons across the interface between Ba-CsPbI2Br and the TiO2 electron transporting layer (ETL). The Ba-CsPbI2Br/TiO2 interface exhibits a type-II staggered band alignment with a smaller conduction band offset (CBO) of 0.25 eV, in contrast to the CsPbI2Br/TiO2 interface with a CBO of 0.48 eV. The reduced CBO at the Ba-CsPbI2Br/TiO2 interface diminishes the barrier for conduction electrons to transfer from the Ba-CsPbI2Br layer to the TiO2 layer, facilitating efficient charge transport.

A dimethylformamide (DMF) and thiourea (TU)‐based ink deposition route is used to fabricate narrow bandgap (≈1.0 eV) CuIn(S,Se)2 (CISSe) films with Cu‐poor ([Cu]/[In] = 0.85), stoichiometric ([Cu]/[In] = 1.0), and Cu‐rich ([Cu]/[In] = 1.15) compositions for photovoltaic applications. Characterization of KCN‐ or (NH4)2S‐treated Cu‐rich absorber films using X‐ray diffraction and scanning electron microscopy confirms the removal of copper‐selenide phases from the film surface, while electron backscatter diffraction measurements and depth‐dependent energy‐dispersive X‐ray spectroscopy indicate remnant copper‐selenides in the absorber layer bulk. Contrary to best practice for vacuum‐processed cells, optimum [Cu]/[In] ratios appear to be stoichiometric, rather than Cu‐poor, in DMF–TU‐based CISSe devices. Accordingly, stoichiometric film compositions yield large‐grained (≈2 μm) absorber layers with smooth absorber surfaces (root mean square roughness <20 nm) and active area device efficiencies of 13.2% (without antireflective coating). Notably, these devices reach 70.0% of the Shockley–Queisser limit open‐circuit voltage (i.e., 526 mV at Eg of 1.01 eV), which is among the highest for ink‐based CISSe devices.

Impedance spectroscopy (IS) is an effective characterization technique used to probe and distinguish charge dynamics occurring at different timescales in optoelectronic and electric devices. With the rapid rise of research being conducted on perovskite solar cells (PSCs), IS has significantly contributed to the understanding of their device performance and degradation mechanisms, including metastable effects such as current–voltage hysteresis. The ionic–electronic behavior of PSCs and the presence of a wide variety of perovskite compositions and cell architectures add complexity to the accurate interpretation of the physical processes occurring in these devices. In this review, the most common IS protocols are explained to help perform accurate impedance measurements on PSC devices. It critically reviews the most commonly used equivalent circuits alongside drift‐diffusion modeling as a complementary technique to analyze the impedance response of PSCs. As an emerging method for characterizing the interfacial recombination between the perovskite layer and selective contacts, light intensity modulated impedance spectroscopy technique is further discussed. Lastly, important works on the application of IS measurement protocols for PSCs are summarized followed by a detailed discussion, providing a critical perspective and outlook on the growing topic of IS on PSCs.