Sun-Ho Park's research while affiliated with Kyung Hee University and other places
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Publication (1)
Interfacial phase-change memory (iPCM), comprising alternating layers of two chalcogenide-based phase-change materials—Sb2Te3 (ST) and GeTe (GT)—has demonstrated outstanding performance in resistive memories. However, its comprehensive understanding is controversial. Herein, the phase-change characteristic of iPCM is identified using atomic scale i...
Citations
... In GST alloy, phase change occurs with reversible switching between octahedral and tetrahedral motifs of Ge atom. Similar phase change process with Ge atoms have been reported for GT/ST SL. 28 The difference is that the phase change process in the superlattice structure is limited to the area near interface (vdW gap), hence reducing entropic loss compared to GST alloy. 7 To investigate the change in the local structure of Ge atoms at the vdW interface using DFT calculations, unit cells of GT/(Ti)-ST SL were constructed using Ferro structure taking Ge/Sb intermixing 17 into account to reflect the experimental environment. ...
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