Steven L. Prins's research while affiliated with University of New Mexico and other places

Publications (12)

Article
Scatterometry, the analysis of light diffraction from periodic structures, is shown to be a versatile metrology technique applicable to a number of processes involved in the production of microelectronic devices. We have demonstrated that the scatterometer measurement technique is robust to changes in the thickness of underlying films. Indeed, ther...
Article
Scatterometry, the characterization of periodic structures via diffracted light analysis, is shown to be a versatile metrology technique applicable to several processes involved in microlithography. Unlike contemporary inspection technologies, such as scanning force microscopy (SFM) and scanning electron microscopy (SEM), scatterometry is rapid, no...
Article
Scatterometry, defined as the angle resolved characterization of light scattered from a surface, is an attractive tool for the metrology of semiconductor devices. It is simple, rapid, non destructive, relatively inexpensive and can be used in-situ. This paper illustrates the use of scatterometry to characterize fine pitch gratings having linewidths...
Article
A scatterometric sensor measures the intensity of light diffracted from a periodic structure. When applied in-situ to the post exposure bake (PEB) process for chemically amplified resists, a scatterometric sensor can monitor the formation of a latent image. Sturtevant, et al and Miller, et al have shown that this application of scatterometry is via...
Article
Scatterometry, the characterization of periodic structures via diffracted light analysis, is shown to be a versatile metrology technique applicable to several processes involved in microlithography. Unlike contemporary inspection technologies, such as scanning force microscopy (SFM) and scanning electron microscopy (SEM), scatterometry is rapid, no...
Article
Scatterometry, the analysis of light scaattered by diffraction from periodic structures, is shown to be a versatile metrology technique applicable to a number of processes involved in microelectronic manufacturing. Contemporary inspection technologies such as scanning force microscopy (SFM) and scanning electron microscopy (SEM), apart from being s...
Article
Scatterometry, the analysis of light scaattered by diffraction from periodic structures, is shown to be a versatile metrology technique applicable to a number of processes involved in microelectronic manufacturing. Contemporary inspection technologies such as scanning force microscopy (SFM) and scanning electron microscopy (SEM), apart from being s...
Article
Scatterometry, the characterization of periodic structures via diffracted light analysis, is shown to be a viable and versatile metrology for critical dimensions as small as 0.24 micrometers . Scatterometry is rapid, nondestructive, inexpensive, and potentially useful for on- line control during several microlithographic processing steps. This pape...
Article
Increased level of integration on dynamic random access memory (DRAM) devices has been achieved by augmenting the number of vertical memory cells used for energy storage. Current methods of implementation include reducing the cell's thickness, while increasing its depth in order to maintain the same capacitance of stored electrical charges. We disc...
Article
We have initiated an effort to develop metrology tools that isolate the effect of each process step. Light scattered from diffracting structures is analyzed to determine characteristics of the structure. The technique is rapid, non-destructive, and extremely sensitive to variations in the samples that were examined. Through our technical collaborat...
Article
Quantitative methods are developed to use optical scatter to measure the critical dimensions of gratings etched into bulk Si and developed photoresist patterns on silicon substrates. Previous work either classified microstructures qualitatively or employed a 'chi-by-eye' method to find that structures were similar or dissimilar. A single detector s...
Article
Quantitative methods are developed to use optical scatter to measure the critical dimensions of gratings etched into bulk Si and developed photoresist patterns on silicon substrates. Previous work either classified microstructures qualitatively or employed a 'chi-by-eye' method to find that structures were similar or dissimilar. A single detector s...

Citations

... In contrast, an adequate metrology technique for the aforementioned task is optical scatterometry because it allows the characterization of periodic structures via analysis of the light diffracted from illuminated samples. 5 The unknown structure parameters are reconstructed by the comparison of intensity measurements and simulations of the diffraction process with the samples. Reconstructed values can be geometrical dimensions as well as intrinsic functions like the refractive index dispersion, for example. ...
... Scatterometry is an attractive inline metrology approach due to the measurement speed and precision [12,13]. ...
... Nous détaillerons plus loin le principe de fonctionnement de ces méthodes dans le paragraphe I.2.4.2.Les méthodes de régression quant à elles se basent sur un nombre fixé d'exemples connus pour retrouver les paramètres géométriques de la structure à tester. Les premières méthodes à être utilisées furent les méthodes de régression linéaire[21] [26]. Ensuite des méthodes de régression non linéaire ont vu le jour[27] [13]. ...
... The term scatterometry summarizes a rather great variety of techniques, all of which have in common that they investigate the diffraction spectrum from a periodic array of nanostructures. Different methods are applied such as spectroscopic ellipsometry [1,2], normal incidence reflectometry [3], 2-9-scatterometry [4] or angular resolved Fourier scatterometry [5]. A quite comprehensive overview about different techniques is given by Raymond [6,7]. ...
... Scatterometry has the advantages of being noncontact, nondestructive, and it does not require special environmental conditions such as a vacuum. Conventional scatterometry 6,8,9 is limited to only specific values of the experimental parameters illustrated in Fig. 1: the azimuth of the sample , the polarizer angle P, and the analyzer angle A. For this reason, important information that can be extracted from the sample remains ignored. Another consequence is that there is little room for optimization of the sensitivity of the experimental arrangement. ...
... For gratings with a pitch comparable to the wavelength of the incoming light, it can be observed from equation (5) that at most a few diffraction orders exist. Instead, by only studying the specular reflection as a function of the angle of incidence, it is possible to measure sub-wavelength gratings [54][55][56][57][58]. In the measurements of the specular reflection, the detector is always positioned symmetrically at the normal of the substrate with respect to the incoming light, see figure 4(B), and hence the name 2-theta (2θ). ...
... Famous examples are optical scatterometry, a.k.a. optical critical dimension (OCD), where electromagnetic modeling paved the way for the fast and non-destructive measurement of technical structures in the nanometer range [10]. However, OCD is just the tip of the iceberg. ...