Shangzhi Song’s research while affiliated with Huazhong University of Science and Technology and other places

Accurate thermal property measurements of multilayer heterostructures, especially in wide-bandgap semiconductor devices, are essential for optimizing device performance. While traditional methods, such as Time-Domain Thermoreflectance (TDTR) and Frequency-Domain Thermoreflectance (FDTR), are effective for thin films and interfaces, they encounter challenges with complex multilayer heterostructures. This paper presents an optical Square-Pulsed Source (SPS) method for comprehensive thermal property measurements of heterostructures. By combining the advantages of TDTR and FDTR, the SPS technique enables time-resolved signal observation and offers an adjustable heating frequency range from 1 Hz to 10 MHz. This allows for the simultaneous determination of multiple parameters, including the thermal conductivity and the heat capacity of each layer and the substrate, and interfacial thermal conductance between layers. Applied to epitaxially grown GaN/Si and ɛ-Ga2O3/SiC heterostructures, the SPS method demonstrates its simplicity, robustness, and precision for comprehensive thermal property analysis, essential for effective thermal management in advanced electronic devices.

Accurately measuring the three-dimensional thermal conductivity tensor is essential for understanding and engineering the thermal behavior of anisotropic materials. Existing methods often struggle to isolate individual tensor elements, leading to large measurement uncertainties and time-consuming iterative fitting procedures. In this study, we introduce the Beam-Offset Square-Pulsed Source (BO-SPS) method for comprehensive measurements of three-dimensional anisotropic thermal conductivity tensors. This method uses square-pulsed heating and precise temperature rise measurements to achieve high signal-to-noise ratios, even with large beam offsets and low modulation frequencies, enabling the isolation of thermal conductivity tensor elements. We demonstrate and validate the BO-SPS method by measuring X-cut and AT-cut quartz samples. For X-cut quartz, with a known relationship between in-plane and cross-plane thermal conductivities, we can determine the full thermal conductivity tensor and heat capacity simultaneously. For AT-cut quartz, assuming a known heat capacity, we can determine the entire anisotropic thermal conductivity tensor, even with finite off-diagonal terms. Our results yield consistent principal thermal conductivity values for both quartz types, demonstrating the method's reliability and accuracy. This research highlights the BO-SPS method's potential to advance the understanding of thermal behavior in complex materials.

State-of-the-art techniques like dual-frequency Time-Domain Thermoreflectance (TDTR) and Frequency-Domain Thermoreflectance (FDTR) offer superb capability for simultaneous measurements of thermal conductivity and heat capacity with a spatial resolution on the order of 10 {\mu}m. However, their applicability is limited to highly conductive materials with an in-plane thermal conductivity exceeding 10 W/(m*K). In this paper, we introduce the Square-Pulsed Source (SPS) technique, offering a novel approach to concurrently measure thermal conductivity and heat capacity with a 10 {\mu}m spatial resolution, while significantly extending the measurable thermal conductivity range to an unprecedented low of 0.1 W/(m*K), offering enhanced versatility. To demonstrate and validate its efficacy, we conducted measurements on various standard materials--PMMA, silica, sapphire, silicon, and diamond--spanning a wide thermal conductivity range from 0.1 to 2000 W/(m*K). The obtained results exhibit remarkable agreement with literature values, with a typical measurement uncertainty of less than 10% across the entire thermal conductivity range. By providing a unique capability to characterize both highly and lowly conductive materials with micron-scale spatial resolution, the SPS method opens new avenues for understanding and engineering thermal properties across diverse applications.

Thermal management has become a crucial issue for the rapid development of electronic devices, and thermal interface materials (TIMs) play an important role in improving heat dissipation. Recently, carbon−based TIMs, including graphene, reduced graphene oxide, and carbon nanotubes (CNTs) with high thermal conductivity, have attracted great attention. In this work, we provide graphene−carbon nanotube composite films with improved electrical and thermal conductivities. The composite films were prepared from mixed graphene oxide (GO) and CNT solutions and then were thermally reduced at a temperature greater than 2000 K to form a reduced graphene oxide (rGO)/CNT composite film. The added CNTs connect adjacent graphene layers, increase the interlayer interaction, and block the interlayer slipping of graphene layers, thereby improving the electrical conductivity, through−plane thermal conductivity, and mechanical properties of the rGO/CNT composite film at an appropriate CNT concentration. The rGO/CNT(4:1) composite film has the most desired properties with an electrical conductivity of ~2827 S/cm and an in−plane thermal conductivity of ~627 W/(m·K). The produced rGO/CNT composite film as a TIM will significantly improve the heat dissipation capability and has potential applications in thermal management of electronics.