Quanyong Lu’s scientific contributions

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Publications (1)

(a) Schematic of a topological micropillar cavity formed by interfacing two 1D photonic crystals (PC1 and PC2) composed of GaAs/AlAs. (b) Schematic energy level diagram of a CQED system for topological micropillar cavity QD surface emitting single photon generation. (c) Schematic of a topological micropillar cavity formed by interfacing two 1D photonic crystals (PC1 and PC2) composed of GaAs/AlAs.
(a)-(b) The band structure of the PC1 and PC2 with parameters given by nGaAs = 3.404, nAlAs = 2.908, dGaAs = 0.4Λ, and dAlAs = 0.6Λ, where Λ = 210 nm is the lattice constant of the unit cell. The band structures of PC1 and PC2 are identical but have distinct Zak phases. (c) The band structure of the topological interface state. (d) The transmission spectra for PC1 and PC2 near their common stopband.
(a) The resonant peaks of the topological interface states for different period numbers of both PC1 and PC2, the transmission spectra for PC1 and PC2 near their common stopband. (b) The quality factor (Q) of the topological interface states for different period numbers of both PC1 and PC2. (c) The transmission spectrum of the 1D PC heterostructure around the common stopband of the two separate PCs. (d) The intensity of electric field within the topological micropillar cavity along z direction at x = 0, y = 0. (e) Electric field distribution (|E|) of the topological interface state of the topological micropillar cavity. (f) The far field distribution of the topological interface state of the topological micropillar cavity.
(a) The evolution process between PC1 and PC2. (b) The topological phase transition diagram of the energy bands for PC1 and PC2. (c) The transmission spectra of three different topological micropillar cavities, each composed of 25 periods from supercells ① and ⑤, ② and ④, and ⑥ and ⑧, respectively.
Robustness of interface state in the topological micropillar. (a) Calculated the peak transmittance of the proposed topological micropillar cavity upon varying the interface layer thickness by 0 nm ≤ d ≤ 15 nm. (b) Calculated the peak transmittance of the regular defective micropillar cavity upon varying the cavity length by 0 nm ≤ d ≤ 15 nm. (c) Electric field distributions of the topological interface state, Tamm states, and fundamental mode inside the cavities for d = 5 nm, and (d) for d = 10 nm. (e) Electric field distributions of the topological interface states and Tamm states inside the cavity when the refractive index of GaAs is changed by δn = −0.2.

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Design of topological micropillar cavities for Purcell enhanced single photon emission from semiconductor quantum dots
  • Article
  • Full-text available

December 2024

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21 Reads

Rusong Li

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Jianjun Zhang

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Quanyong Lu

Semiconductor self-assembled quantum dots offer distinct advantages in generating near-optimal single photons, which have important applications in quantum communication and linear optical quantum computation. Semiconductor quantum dot single-photon sources in the telecommunication band are garnering significant attention due to their considerable advantages in low-loss long-distance fiber transmission. In this paper, we propose and design a topological micropillar cavity based on the interface states between two one-dimensional photonic crystals with distinct Zak phases, achieving a high-quality factor exceeding 15,000 and a significant Purcell factor of up to 606 in the 1.31-µm band. We have computed the emission efficiency by an InAs/GaAs quantum dot coupled to an arbitrarily detuned single-mode topological micropillar cavity, taking into account pure dephasing processes and the ratio of external-to-internal cavity losses. Our results demonstrate that the designed topologically protected micropillar single-photon sources exhibit robust single-photon emission with high efficiency of over 90% even in the highly dephasing and detuning conditions, which is in striking contrast to the conventional micropillar single-photon sources. Our study provides theoretical guidance for the development of a new type of surface-emitting single-photon source with high performance.

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