Peng Xiao’s research while affiliated with South Central College and other places

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Publications (8)


a) Schematic diagram of synthesis process of pSi@void@NFC composites. TEM images of b) Si, c) Si@C, and d,e) pSi@void@NFC composites. f) HRTEM image of pSi@void@NFC composites. g) HAADF‐STEM image, and EDX mapping of Si, O, C, F, and N elements of pSi@void@NFC composites.
Schematic illustration of morphology evolution for an individual Si NP during NF3 etching process.
a) XRD patterns, b) Raman spectrums, c) Thermogravimetric profiles, d) Nitrogen adsorption‐desorption isotherms, e) pore size distribution, and f) BET specific surface area values of Si, Si@C and pSi@void@NFC composites.
a) XPS spectra of Si@C and pSi@void@NFC composites. High‐resolution XPS spectra of the b) Si 2p, c) C 1s, d) F 1s, e) N 1s, and f) O 1s peaks for pSi@void@NFC composites.
a) CV plots of pSi@void@NFC electrode in the potential windows of 0.01–1.0 V (vs Li/Li⁺) at a scan rate of 0.1 mV s⁻¹. b) Rate capability and c) cycle stability at current density of 0.5 A g⁻¹ of Si, Si@C, and pSi@void@NFC electrodes. d) Cycle performances of pSi@void@NFC electrodes at 0.5 mA cm⁻² after the first cycle of 0.2 mA cm⁻² with different Si loadings. e) Long‐term cycle performances of pSi@void@NFC electrodes at different current densities after initial 0.1 A g⁻¹ for the first cycle and 0.4 A g⁻¹ for the succeeding 10 cycles.

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High‐Performance Yolk‐Shell Structured Silicon‐Carbon Composite Anode Preparation via One‐Step Gas‐Phase Deposition and Etching Technique
  • Article
  • Publisher preview available

November 2024

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24 Reads

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1 Citation

Peng Zhou

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Peng Xiao

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Liang Pang

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[...]

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Feixiang Wu

For producing high‐capacity silicon (Si) anodes, a combined gas‐phase deposition and etching technique is developed to construct yolk‐shell structured silicon‐carbon composites. As a novel etching agent in battery field, NF3 is applied to selectively etch Si to tailor the architecture. Si particles as self‐sacrificed precursor have no need to build artificial or complex templates in advance, thereby greatly simplifying fabrication process and showcasing practicality. As a result, yolk‐shell structured silicon‐carbon composites are successfully fabricated in a single step. Sufficient buffer space between Si and carbon layer accommodates the significant expansion of Si during lithiation, preventing fracture of the carbon layer, which greatly improves service life of Si‐based anodes. Moreover, the refined particle size of Si and abundant pores in inner Si cores enhance the lithiation and de‐lithiation kinetic. Even with a high Si loading of 3.9 mg cm⁻², the produced anode exhibits a superior areal capacity of 16.3 mAh cm⁻² at 0.2 mA cm⁻². Furthermore, at a high current density of 4 A g⁻¹, it demonstrates an excellent capacity of 1114 mAh g⁻¹ after 1000 cycles with a capacity retention of 96.3%. Additionally, with pre‐lithiation, it is successfully paired with an iron trifluoride cathode to construct high‐energy lithium‐ion batteries.

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Modified preparation of Si@C@TiO2 porous microspheres as anodes for high-performance lithium-ion batteries

February 2023

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11 Reads

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14 Citations

Dalton Transactions

Microscale porous silicon materials have shown great application potential as anodes for next-generation lithium-ion batteries (LIBs); however, they face significant challenges, including mechanical structure instability, low intrinsic conductivity, and uncontrollable processing. In this study, a modified etching strategy combined with a facile sol-gel method is demonstrated to prepare microscale porous Si microspheres encapsulated by an inner amorphous carbon shell (≈10 nm) and an outer rigid anatase titanium oxide (TiO2) shell (≈20 nm) (PSi@C@TiO2), with the intact porous framework and core-shell-shell spherical structure. The interconnected pores can sufficiently accommodate the expansion of the Si core during lithiation. Moreover, the double shells can not only enhance the kinetic behavior of the PSi@C@TiO2 microspheres, but can act as a compact fence to force the Si core to expand toward the internal pores during lithiation, ensuring the integrity of the porous spherical structure. As a result, the PSi@C@TiO2 anodes show greatly superior high specific capacity, excellent rate capability, stable solid-electrolyte interphase (SEI) films and steady mechanical structure. It delivers a high reversible capacity of 1004 mA h g-1 after 250 cycles at 0.5 A g-1. This study provides a modified method to prepare microscale porous Si anodes with a stable mechanical structure and long cycle life for LIBs.



Facile synthesis of yolk-shell Si@void@C nanoparticles with 3D conducting networks as free-standing anodes in lithium-ion batteries

January 2023

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11 Reads

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35 Citations

Journal of Alloys and Compounds

The low cost and high performance via a simple way of fabrication are considerable challenges for Si-based anode in the application of lithium-ion batteries. In this study, we synthesize a novel free-standing Si/C anode, consisting of yolk (Si)-shell (amorphous carbon) nanoparticles and carbon nanofibers (denoted as [email protected]@C/CNFs), via a facile route of template removal and electrospun. The designed yolk-shell structure help buffer the volume expansion of silicon during the discharge/charge cycles, and the intertwined CNFs are conducive to electron fast transmission and guarantee structural integrity. As expected, with a low Si content (∼23 wt%), the self-supporting electrode of [email protected]@C/CNFs exhibits a high specific capacity of ∼627.5 mAh g⁻¹ as well as 69.3% capacity retention at 0.1 A g⁻¹ after 100 cycles, better than [email protected]/CNFs (20%) and Si/CNFs (9.5%) electrodes. The superior performance of [email protected]@C/CNFs indicates that it is an attractive anode material for the practical application of Lithium-ion batteries.


Increasing of the ON-state current of 5.1 nm MoTe2 in-plane Schottky barrier field-effect transistors by O-passivation and W-doping

Applied Physics A

Through first-principles calculations, we demonstrate that the combined application of tungsten doping (W-doping) and oxygen passivation (O-passivation) can well make the Schottky barrier field-effect transistors (SBFETs) based on MoTe2 with 1 T–2H–1 T structure represent an excellent candidate for application in 5.1 nm SBFETs. Our results show that: W-doping in the channel 2H–MoTe2 near the source of the intrinsic MoTe2–SBFET can make ION increased just slightly as the number of W-doping increases, but the ION is still lower than 900 uA/um (the ON-state currents requirement of ITRS) when the number of W-doping is to 4 periods(4P), so W-doping is not an ideal method to increase ION; the ION of the MoTe2–SBFET can be increased from 642.2 uA/um to 941.7 uA/um by the combined application of W-doping and O-passivation which meet the ON-state currents requirement of ITRS.


Suppression of short channel effects in 5.1 nm WTe2 in-plane Schottky barrier field-effect transistors by Mo-doping

November 2021

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15 Reads

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3 Citations

Materials Science in Semiconductor Processing

Single layer Schottky barrier field-effect transistors (SBFETs) composed of the in-plane (IP) hetero-junctions of 1T-WTe2(metallic phase WTe2) and 2H–WTe2(semiconducting phase WTe2) have been proposed in this paper. However, the transfer characteristic show that the 5.1 nm IP 1T-2H-1T WTe2 SBFET cannot suppress the short channel effect causing the leakage current beyond the OFF current (IOFF) requirement (0.1 μA/μm) of the International Technology Roadmap for Semiconductors (ITRS, 2013 version) for production in 2028. To solve this problem, we replace the W atoms of 2H–WTe2 near the source electrode with Mo atoms to conquer the short channel effect. We found that the leakage currents of the 5.1 nm IP 1T-2H-1T WTe2 SBFETs decrease gradually with the increase of the number of substitution Mo atoms. When the number of substitutions increases to six periods, the leakage drain current of the 5.1 nm IP 1T-2H-1T WTe2 SBFETs is lower than 0.1 μA/μm. Fortunately, the corresponding ON current (ION) is 961 μA/μm which also conforms to the ON current requirement (900 μA/μm) of ITRS (2013 version) for production in 2028. Therefore, the monolayer WTe2 with the Mo atom substitution also can be used as the channel material in future 5 nm transistor.

Citations (5)


... [11][12][13][14][15] To improve the electrochemical performance of Si-based anodes, three main strategies have been proposed to address the above challenges: dimension nanostructuring, alloying with other metals, and controlled surface oxidation. [16,17] The strategy of dimension nanostructuring involves the preparation of silicon-based structures in various dimensional forms, such as 0D (Si nanospheres), [18,19] 1D (Si nanowires), [20][21][22] and 2D (fewlayer silicene) [23,24]. Among these, 2D engineering is regarded as the most promising approach due to the unique structures, which can effectively mitigate volume expansion, shorten the diffusion paths of Li + ion, and enhance ion transport. ...

Reference:

Activating lithium storage in 2D CaSi 2 anode via enhancing pseudocapacitive properties with oxygen modification engineering
High‐Performance Yolk‐Shell Structured Silicon‐Carbon Composite Anode Preparation via One‐Step Gas‐Phase Deposition and Etching Technique

... There are several effective techniques for creating porous silicon, including metalassisted chemical etching [16], reactive ion etching [17], the sulfur-template method [18], metal-assisted electrochemical etching [19], and electroless chemical etching [20]. Most of these methods rely on dry etching or electrochemical processing [1]. ...

Sulphur-template method for facile manufacturing porous silicon electrodes with enhanced electrochemical performance
  • Citing Article
  • August 2024

Chinese Chemical Letters

... However, the use of these nanostructures cannot solve the problem of poor electrical conductivity of silicon. The large surface area of the silicon nanoparticles results in the agglomeration of silicon and side reactions of the electrode, which also leads to rapid battery failure [16,17]. In addition, the preparation of nanostructured Si is complex and costly, making it commercially unfeasible. ...

Modified preparation of Si@C@TiO2 porous microspheres as anodes for high-performance lithium-ion batteries
  • Citing Article
  • February 2023

Dalton Transactions

... Yang et al. designed a novel free-standing Si/C anode consisting of yolk (Si)-shell (amorphous carbon) nanoparticles and carbon nanofibers (Si@void@C/CNFs), via a facile route of template removal and electrospun ( Figure 24). [111] Due to the confinement effect, the yolk-shell structure can effectively buffer large volumetric changes of Si nanoparticles during the discharge/charge process. The N-doped carbon fibers within the composites form a well-connected network, effectively increasing the number of active sites available for Li + storage and promoting rapid electron transfer. ...

Facile synthesis of yolk-shell Si@void@C nanoparticles with 3D conducting networks as free-standing anodes in lithium-ion batteries
  • Citing Article
  • January 2023

Journal of Alloys and Compounds

... In the last couple of decades, the rise of 2D materials, i.e., graphene and beyond, has sparked a surge of innovation in all branches of materials science, including electronic devices and photocatalysts [7][8][9][10][11][12][13]. Due to their high surface-to-volume ratio, mobility, and bandgap tunability, 2D materials-based catalysts have also emerged as promising alternatives in recent years [12,14]. ...

Suppression of short channel effects in 5.1 nm WTe2 in-plane Schottky barrier field-effect transistors by Mo-doping
  • Citing Article
  • November 2021

Materials Science in Semiconductor Processing