Nikhil M. Kriplani’s research while affiliated with North Carolina State University and other places

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Publications (19)


Behavioural modelling of amplifier asymmetry in the time domain
  • Article

March 2013

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22 Reads

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2 Citations

International Journal of Numerical Modelling Electronic Networks Devices and Fields

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N. M. Kriplani

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M. B. Steer

SUMMARY Power amplifier asymmetry is captured by a behavioural model that contains multiple slices representing the amplifier's nonlinearity and long-term, that is low frequency, memory. The simulation is performed entirely in the time domain, and the expense associated with performing a purely transient radio frequency (RF) simulation is circumvented by scaling down the carrier frequency by two orders of magnitude. This leads to a manageable transient simulation with results scaling back to the original carrier frequency. The model is empirical and can be easily implemented in any general purpose circuit simulation environment. The baseband portion of the model parameters was extracted and the simulation result was compared with measurement, thereby demonstrating that a nonlinear and accurate transient analysis routine can be effectively employed to capture memory-related RF power amplifier phenomena. Copyright © 2012 John Wiley & Sons, Ltd.


Parallel Transient Simulation of Multiphysics Circuits Using Delay-Based Partitioning

October 2012

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35 Reads

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4 Citations

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

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Nikhil M. Kriplani

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[...]

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Michael B. Steer

A parallel transient simulation technique for multiphysics circuits is presented. The technique develops partitions utilizing the inherent delay present within a circuit and between physical domains. A state-variable-based circuit delay element is presented, which implements the coupling between two spatially or temporally isolated circuit partitions. A parallel delay-based iterative approach for interfacing delay-partitioned subcircuits is applied, which achieves the reasonable accuracy of nonparallel circuit simulation if both incorporate the same interblock delay. The partitioned subcircuits are distributed to different cores of a shared-memory multicore processor and solved in parallel. A multithreaded implementation of the methodology using OpenMP is presented. Examples showing superlinear speedup compared to unpartitioned single-core simulation using the direct method are presented. This paper also discusses the impact of load balancing and absolute delay on simulation speedup.


Why it is so hard to find small radio frequency signals in the presence of large signals

September 2012

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50 Reads

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9 Citations

The essence of radar, radio and wireless sensor engineering is extracting small information-bearing signals. This is notoriously difficult and engineers compensate by transmitting high power signals, reducing range, and spacing wireless systems in frequency and time. New understandings of passive intermodulation distortion, thermal effects, time-frequency effects, and noise are presented. It is seen that the familiar frequency-domain-based abstractions have missed important underlying physics. Through greater understanding, RF engineers can develop microwave systems with far lower levels of distortion and noise.


A Transient Electrothermal Analysis of Three-Dimensional Integrated Circuits

April 2012

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45 Reads

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12 Citations

IEEE Transactions on Components, Packaging, and Manufacturing Technology

A transient electrothermal simulation of a 3-D integrated circuit (3DIC) is reported that uses dynamic modeling of the thermal network and hierarchical electrothermal simulation. This is a practical alternative to full transistor electrothermal simulations that are computationally prohibitive. Simulations are compared to measurements for a token-generating asynchronous 3DIC clocking at a maximum frequency of 1 GHz. The electrical network is based on computationally efficient electrothermal macromodels of standard and custom cells. These are linked in a physically consistent manner with a detailed thermal network extracted from an OpenAccess layout file. Coupled with model-order reduction techniques, hierarchical dynamic electrothermal simulation of large 3DICs is shown to be tractable, yielding spatial and temporal selected transistor-level thermal profiles.


Dynamic electrothermal simulation of three-dimensional integrated circuits using standard cell macromodels

January 2012

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30 Reads

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9 Citations

Physics-based compact electrothermal macromodels of standard cells are developed for fast dynamic simulation of three-dimensional integrated circuits (3DICs). Such circuits can have high thermal densities and thermal effects often limit their performance. The macromodels developed here use fewer state-variables than a discrete transistor-level implementation while retaining transistor-level accuracy. This results in significant speed-up over transistor-level simulation for large-scale circuits. The macromodel-based methodology enables robust and significantly faster dynamic electrothermal simulation over the long times required for thermal transients to subside. Consequently, transient junction temperature can be examined in the design phase. Simulated junction and measured surface thermal transients are compared.


A Transient Electrothermal Analysis of Three-Dimensional Integrated Circuits

January 2012

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28 Reads

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3 Citations

A transient electrothermal simulation of a 3-D integrated circuit (3DIC) is reported that uses dynamic modeling of the thermal network and hierarchical electrothermal simulation. This is a practical alternative to full transistor electrothermal simulations that are computationally prohibitive. Simulations are compared to measurements for a token-generating asynchronous 3DIC clocking at a maximum frequency of 1 GHz. The electrical network is based on computationally efficient electrothermal macromodels of standard and custom cells. These are linked in a physically consistent manner with a detailed thermal network extracted from an OpenAccess layout file. Coupled with model-order reduction techniques, hierarchical dynamic electrothermal simulation of large 3DICs is shown to be tractable, yielding spatial and temporal selected transistor-level thermal profiles.


Transient Simulation Based on State Variables and Waves

May 2011

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85 Reads

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8 Citations

This article reports a new method for transient analysis of nonlinear circuits based on nonlinear device state variables and waves at their ports. The method is based on relaxation and thus does not require large matrix decompositions if time step is constant. The use of waves results in guaranteed convergence for any linear passive circuit and some types of nonlinear circuits. Additionally, the formulation using waves ensures that nonlinear devices are always excited with a physically meaningful input, i.e., the amount of power transmitted to nonlinear devices is bounded. The method was implemented in the fREEDA™ circuit simulator. The formulation, its properties, and a convergence analysis of the proposed method are presented first, followed by case studies. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2011.


Table 1 : Esaki tunnel diode parameter table.
Simulated transient response of oscillator circuit.
Esaki tunnel diode circuit model.
Oscillator circuit used for transient simulation.
Esaki tunnel diode I-V characteristic.

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Modelling of an Esaki Tunnel Diode in a Circuit Simulator
  • Article
  • Full-text available

January 2011

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4,688 Reads

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14 Citations

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.

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Fast dynamic simulation of VLSI circuits using reduced order compact macromodel of standard cells

September 2010

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71 Reads

This paper presents a dynamic simulation methodology using a reduced order compact macromodel of standard cells. The standard cell macromodels are formulated with a smaller number of state variables compared to an equivalent transistor-level implementation. This results in significant speed-ups over transistor-level simulation for large scale circuits. Such reduction in state variables also reduces memory usage. The macromodels are based on transistor equations, and simulation using these models produces results in excellent agreement (delay errors below 1%) with transistor-level simulation results. Various examples showing 1.5x−100x reduction in dynamic simulation time and 1.5x−2.8x reduction in memory usage are presented.


Integration of FDTD EM Analysis and Transient Circuit Simulation of RF Systems

July 2009

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19 Reads

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2 Citations

IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium

A combined transient simulation of a 300 MHz input, 20 MHz output RF radio transceiver system was performed using an industry standard FDTD simulator integrated with an open source state-variable based multi-physics simulator. The two simulators were interfaced at every time step and several nonlinear iterations were performed at each step in order to ensure simulation convergence of the system which contains strong nonlinearities and a wide range of signal strengths at different points in the system.


Citations (11)


... For landmine detection, the major challenge is that the landmine reflection signal is extremely weak due to the small magnitude displacement of landmine vibration. In addition, there exist RF interference signals that can impair Doppler radar performance, i.e. the direct coupling between the transmitter antenna and the receiving antenna, the intrinsic distortion factors in the system, and strong clutter in the sensing environment [12][13][14][15][16]. To achieve meaningful measurements, it is necessary to leverage the Doppler radar dynamic range by alleviating the interference and enhancing the small signal under measurement. ...

Reference:

Adaptive RF interference canceller in high dynamic range Doppler radar for landmine detection
Why it is so hard to find small radio frequency signals in the presence of large signals
  • Citing Conference Paper
  • September 2012

... Observing the procedure of modeling and discretization, some components, such as transmission lines and control systems, have time delays inside or for connecting to external components, which provide the native characteristics to decouple the network based on propagation delay [40]. For example, in ULM of transmission line, the propagation delay τ in (16) is given as ...

Parallel Transient Simulation of Multiphysics Circuits Using Delay-Based Partitioning
  • Citing Article
  • October 2012

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

... In order to compute non-isothermal characteristics of semiconductor devices, an electrothermal analysis should be performed. In the literature many papers, e.g., [11][12][13][14][15][16][17] consider different aspects of electrothermal analyses. The papers [11,12] describe such an analysis performed with the use of compact electrothermal models, which use only one internal device temperature to characterize thermal properties of semiconductor devices. ...

A Transient Electrothermal Analysis of Three-Dimensional Integrated Circuits
  • Citing Article
  • April 2012

IEEE Transactions on Components, Packaging, and Manufacturing Technology

... When the device reaches −1.2 V in the negative voltage sweep part (3rd arrow), it switches to the LRS (109∼) with a sharp current change and this value is the set value of the device. The nonzero current at the 2nd and 3rd parts of the hysteresis curve is due to the tunnelling current [46][47][48][49][50] through the oxide barrier between metal electrodes. Relatively low voltage values of the set and reset states are due to a small thickness (5.6 nm) of the TiO y layer. ...

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

... In this regard, some efforts have been made in order to model molecular electronics [6][7][8][9][10][11]. For electronic devices, in general, there are two major types of models; the physics-based models [10][11][12][13][14], and the nonphysics-based models [15], [16] or behavioral models. Since the underlying physics of molecular electronics have not been yet completely known and also many different kinds of materials are applied in molecular electronics, the behavioral model is more applicable in this field. ...

Physically based molecular device model in a transient circuit simulator
  • Citing Article
  • July 2006

Chemical Physics

... 32 wavelet coefficients are used to capture the power dynamics of 128 samples. Prediction model for these 32 coefficients are constructed using linear, polynomial and RBF based regression techniques (please refer [13] for more details about each technique). The RBF based regression achieves best prediction accuracy among the three regression techniques explored in this work. ...

Dynamic electrothermal simulation of three-dimensional integrated circuits using standard cell macromodels
  • Citing Article
  • January 2012

... Numerous FP [23]- [25] and NR [16], [26] methods have been successfully used in the past for solving circuits with multiple one-port nonlinearities in the WD domain, however a strategy for the optimal selection of the free parameters at the ports of nonlinear elements has been discussed for the first time in [27], where a WD FP method called Scattering Iterative Method (SIM) was presented for the analysis of large photovoltaic arrays, and later generalized to account for the discretetime simulation of dynamic nonlinear audio circuits [11], [28]- [31]. In particular, the optimal choice of the free parameter Z of a one-port element is found to be Z = v (i), i.e., the derivative of the port voltage with respect to the port current. ...

Transient Simulation Based on State Variables and Waves
  • Citing Article
  • May 2011

... The approach in [2] allows nonlinear devices to be modelled using voltages and currents, and thus it is more suitable for implementation in a circuit simulator. In Ref. [1], the method proposed in [2] was further developed with parameterized nonlinear device models, implemented in the fREEDA TM [6] simulator and tested with a wider variety of circuits. This paper proposes for the first time to use a block Newton-Jacobi approach to accelerate the convergence of the nonlinear equations that arise in the transient analysis aimed to microwave circuits presented in [1]. ...

Streamlined Circuit Device Model Development with fREEDA® ãnd ADOL-C
  • Citing Chapter
  • February 2006

Lecture Notes in Computational Science and Engineering