Nazarii Boichuk's research while affiliated with Chinese Academy of Sciences and other places

Publications (15)

Article
High‐quality, liquid‐gated two‐layer (TL) nanowire (NW) field‐effect transistor (FET) structures are fabricated and studied in different operation regimes and with different concentrations of MgCl2 solutions. The space‐charge‐limited current (SCLC) effect is sensitive to surface phenomena and is registered at the drain‐source voltage (VDS) above 0....
Preprint
The lattice dynamics of preferentially aligned nanocrystals formed upon drying of aqueous Ba(NO$_3$)$_2$ solutions in a mesoporous silica glass traversed by tubular pores of approximately 12 nm are explored by Raman scattering. To interpret the experiments on the confined nanocrystals polarized Raman spectra of bulk single crystals and X-ray diffra...
Article
Full-text available
The lattice dynamics of preferentially aligned nanocrystals formed upon drying of aqueous Ba(NO3)2 solutions in a mesoporous silica glass traversed by tubular pores of approximately 12 nm are explored by Raman scattering. To interpret the experiments on the confined nanocrystals polarized Raman spectra of bulk single crystals and X-ray diffraction...
Article
Full-text available
We study the liquid crystalline phase behaviour of the two-component aqueous colloidal suspensions of multiwalled carbon nanotubes (MWCNTs) and rod-like vanadium pentoxide (V2O5) nanoparticles. The phase diagram features a stable nematic phase in a wide range of concentration of solid components. The oriented nematic phase of the two-component susp...
Article
Full-text available
In small‐area transistors, the trapping/detrapping of charge carriers to/from a single trap located in the gate oxide near the Si/SiO2 interface leads to the discrete switching of the transistor drain current, known as single‐trap phenomena (STP), resulting in random telegraph signals. Utilizing the STP‐approach, liquid‐gated (LG) nanowire (NW) fie...
Article
With the fast-shrinking of the transistor dimensions, the low-frequency noise level considerably increases emerging as an important parameter for the design of advanced devices for information technologies. Single-trap phenomena (STP) is a promising approach for the low-frequency noise suppression technique in nanotransistor biosensors by consideri...
Article
Full-text available
Transistor biosensors are mass-fabrication-compatible devices of interest for point of care diagnosis as well as molecular interaction studies. While the actual transistor gates in processors reach the sub-10 nm range for optimum integration and power consumption, studies on design rules for the signal-to-noise ratio (S/N) optimization in transisto...
Article
Full-text available
Numerous sensitive nanobiosensors are reported for various bioassay applications as a result of the development of materials science and nanotechnology. Among these sensors, nanowire (NW) field‐effect transistors (FETs) represent one of the most promising practical biosensors for ultrasensitive clinical diagnostic tools. Most studies mainly focus o...
Article
New highly sensitive direct methods for the early detection of peptides involved in Alzheimer's disease (AD) are required in order to prolong effective and healthy memory and thinking capabilities and also to stop the factors resulting in AD. In this contribution, we report the successful demonstration of a label-free approach for the detection of...
Article
C-reactive protein (CRP) and cardiac troponin I (cTnI) biomolecules represent the earliest enzymes that appear in the blood when a cardiac injury occurs. Real-time and selective detection of these biomarkers is essential for the prediction and detection of cardiovascular diseases at an early stage. Here we report on the label-free specific detectio...
Article
Full-text available
We reveal the comparative relationship between small changes in quantum conductivity behavior for molecular junctions. We clarify the mechanisms of acquiring and losing additional thermal activation energy during average current flow in a gold-1,4 benzenediamine (BDA)-gold molecular junction and explain the quantum conductance modulation process. S...
Article
Silicon two‐layer (TL) nanowire (NW) field‐effect transistors (FETs) are fabricated by applying a CMOS‐compatible top‐down approach to silicon on insulator (SOI) wafers with additionally epitaxially grown silicon layers. Transport and noise properties of fabricated structures with p‐type conductivity are studied in a wide temperature range (100–300...
Article
We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in sev...
Conference Paper
We fabricated new types of nanowires that consist of two silicon layers with different doping concentrations. Fabricated structures demonstrate pronounced random telegraph signal fluctuations as a result of single electron dynamic processes. Liquid-gated nanowire transistor devices show advanced characteristics favorable for a new sensing approach...

Citations

... The segmentation is calibrated for the cubic slice of 300×300×300 voxel at position z = 900 to a relative density of = 45.7%. Moreover, it can be seen in the single segments, that the main pores exhibit interconnections, which would confirm recent results in literature [15,16,57]. The main pores in the tomography are in a range of 7-25 nm, but are not further evaluated here. ...
... Today, applications that utilize liquid crystals have enlarge in different fields of optics, display technology and sensors due to their extra-ordinary physical and optical properties. To improve these properties one step further, liquid crystals can be doped with nanoparticles [34][35][36][37][38][39][40] V 2 O 5 , carbon dots, graphene oxide, zinc oxide nanoparticle dispersed nematic have been investigated before [19,20,[40][41][42][43][44][45]. In this work, it has been aimed to chemically synthesis with optimized method and characterization of GO@Fe 3-O 4 @TiO 2 type organic-inorganic nano-hybrid material and examine the unique photocatalytic activity in the degradation of ciprofloxacin and the effect of it on E7 nematic liquid crystals. ...
... The devices were fabricated using the protocol described above. We introduced a highly doped top epitaxial layer of silicon with advanced properties from the perspective of the singletrap phenomena (Kutovyi et al., 2018b(Kutovyi et al., , 2018a. A schematic illustration of the fabricated nanowire transistor with a single trap in a thin dielectric layer is shown in Fig. 4a. ...
... We have used lightly doped thin device layer SOI wafers to demonstrate their suitability for detecting small changes in charge at the electrolyte-oxide surfaces (i.e., caused by the interaction of the proteins with peptides immobilized on the gate surface, which is the long-term goal of this work). A larger planar surface area allows a better signal-to-noise ratio and also less stringent requirements to counter reliability issues, e.g., from pin-holes, as compared to the nanowire counterparts [21]. Figure 1 shows the schematic of the proposed device design ( Figure 1A) and the cross-sectional view of the device layout ( Figure 1B). ...
... Except for being coupled by effective gate voltage, carries also can be induced directly as the change in bio-molecule concentration, with immobile bioprobes modified at the surface of the active layer. The sensitivity of FET devices, such as the silicon nanowire field-effect transistor (SiNW-FET) and the carbon nanotube field-effect transistor (CNT-FET), can be enhanced with an active layer in nanoscale instead of planar geometry, due to the large surface-tovolume ratio, quantum confinement, etc [111][112][113]. However, the complicated processes of materials or nanoscale structure also lead to challenges with high-throughput manufacture, high costs, and poor device-to-device variations [114,115]. ...
... In a study, the novel strategy for Aβ determination was fabricated using highly selective aptamers conjugated onto the silicon (Si) nanowire (NW) FETs covered by a thin layer of SiO 2 , via 3-glycidyloxypropyltrimethoxysilane (GPTS) (Fig. 10a). The different concentrations of Aβ binding to the sensors surface varied from 0.1 pg/mL to 10 μg/mL [95]. In another study, an ultrasensitive and multiplexed determination of the Aβ42 and t-Tau in biological fluids using a gFET have been reported (Fig. 10b). ...
... Typically, silicon-based biologically sensitive FEDs (BioFEDs) consist of an electrolyte-insulator-semiconductor (EIS) structure modified with receptors, which serves as basic transducer architecture for constructing a wide variety of chemical sensors and biosensors (see, e.g., recent reviews [1][2][3][4][5][6][7][8][9]). For instance, BioFEDs were developed for the analysis of metabolites [10][11][12][13], antibiotics [13,14], and for the label-free detection of charged molecules (nucleic acids [15][16][17][18], protein biomarkers [19][20][21][22][23], polyelectrolytes [24,25]) and charged nano-objects (e.g., ligandstabilized gold nanoparticles (AuNP)) [26,27], nanoparticle/molecule hybrids [28], virus particles [5,[29][30][31]). The concept also enabled us to design enzyme-based logic gates, which mimic the functioning of electronic logic gates [32,33]. ...
... 102 Thus, special signal processing algorithms should be often used to split noise and useful signal. 103 but several enzymes were also tested. For example, GOx was immobilized on the surface of FET based on In 2 O 3 nanoribbons. ...
... Considering a typical lower range of N ot = 10 8 cm −2 for the state-of-the-art devices, we see that N ot A = 1 corresponds to A = 1µm 2 as a lower boundary [13][14][15] , and therefore, one can wonder what is the optimal design rule when A < 1µm 2 . Even more interestingly, nanoscale devices can offer unique opportunities for noise suppression due to the absence of traps 10 , correlation effects 19,20 , and single-trap phenomena [21][22][23] . Here, we address both questions and show in particular that, by analogy with the stochastic resonance (SR) noise suppression approach found in biological systems, the exploitation of single-trap phenomena in nanoscale devices can be quantitatively described and used for noise suppression, even beyond the thermal noise limit 2,24 . ...