Naoya Suzuki's research while affiliated with Tokyo University of Science and other places
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Publications (6)
Anatase TiO2−δ thin film was prepared by RF magnetron sputtering using oxygen radical and Ti-metal target. Degrees of the TiO2−δ crystal orientation in the thin film depends of the oxygen gas pressure () in the radical gun. The (004)- and (112)-oriented TiO2−δ thin films crystallized without postannealing have the mixed valence Ti4+/Ti3+ state. The...
We have prepared c-axis controlled α-Fe2O3 thin films on Al2O3 substrates by RF magnetron sputtering and studied their electronic structure by soft-X-ray spectroscopy. The lattice constant of c-axis increases with increasing film thickness due to the relaxation of lattice mismatch between α-Fe2O3 and Al2O3 and formation of oxygen vacancies. The ele...
The a- and c-axes-oriented BaCe0.85Ru0.05Y0.10O3−δ (BCRY) thin films have been deposited on Nb-SrTiO3(100) substrates by radio frequency (RF) magnetron sputtering. Such BCRY thin films have mixed valence states of Ce4+ and Ce3+. The activation energies (E
A) for the conductivity of films thicker than 200 nm are 0.23–0.26 eV, which corresponds to ha...
The structural and electrical properties of a c-axis-oriented BaCe0.85Ru0.05Y0.10O3-delta (BCRY) thin film on an Al2O3(0001) substrate depending on film thickness have been studied. The lattice constant of the c-axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The a...
An in-plane-oriented BaPrO3-δ thin film with mixed valence states has been prepared on an Al2O3(0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (Tsub), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above Tsub = 800 °C exhibits a higher proton...
The physical properties and electronic structure of c-axis-oriented Ti1−xFexO2−δ thin films have been studied by soft X-ray spectroscopy. The c-axis lattice constant increases with increasing Fe concentration. Fe ions have mixed valence states of Fe2+ and Fe3+ with a high-spin configuration. The intensity of the unoccupied Ti 3d state decreases and...
Citations
... Thus, the slope value of the conductivity against P O2 reflects electron or hole conduction or electronion mixed conduction. [32][33][34] The slope value in this study is estimated to be −0.004, which indicates the ion conduction at 300 K. 34) Figure 3 shows the O 1s core level PES spectrum of the BaTiO 3À thin film. ...
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... However, the small peak at around 9 eV in the BPY XPS spectrum is not present in the calculated DOS. This peak is unlikely to be the Pr-4f peak since photoelectron spectroscopy data of BaPrO 3 from literature 11,12 reported Pr states to be located near the top of the O states in the valence band. This discrepancy may have been due to XPS being a surface sensitive technique (∼5 nm), whereas the calculated DOS was for the bulk. ...
... Conduction properties of undoped TiO 2 thin film with anatase or rutile structure can be controlled from an insulator phase to semiconductor or metal phase by substitution of different ion on the Ti 4+ site. [1][2][3][4][5][6][7][8][9][10] Typical materials are Nb 5+ -doped TiO 2 (Ti 1Àx Nb x O 2 ), [2][3][4][5] Ta 5+ -doped TiO 2 (Ti 1Àx -Ta x O 2 ) 6) and Co-doped TiO 2 (Ti 1Àx Co x O 2À ). 7,8) Hitosugi et al. has reported that the anatase-type Ti 0.95 Ta 0.05 O 2 epitaxial thin film prepared by pulsed laser deposition exhibits a low resistivity of 2:5 Â 10 À4 Ω cm, carrier density of 1:4 Â 10 21 cm −3 and high internal transmittance of 95% in the visible light region at room temperature (R.T.). ...
