Minghua Li’s research while affiliated with Agency for Science, Technology and Research (A*STAR) and other places

... CIM has been recognized as a promising approach for accelerating core operations, such as vector-matrix multiplication (VMM), which are central to DNN computations. Various non-volatile memory devices, including resistive random-access memory (ReRAM) [13][14][15][16][17][18][19][20][21][22][23][24][25][26], phase-change memory (PCM) [27][28][29][30][31][32][33][34][35][36], and ferroelectric devices [37][38][39][40][41][42][43][44][45][46], have been investigated for CIM applications due to their distinctive properties. Among them, flash memory has gained significant attention in the CIM application [47][48][49][50][51][52][53][54][55][56]. ...

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Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash

... These results suggest a minimal "size effect" on the P r value of (Al,Sc)N films. 92,93) ...

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Advances and challenges in novel non-perovskite-based ferroelectrics film for memory device applications

... Many recent reviews have thoroughly discussed the key advantages and future directions of AlScN as an FE material, emphasizing its growing importance in high-performance devices [9][10][11][12]. However, a comprehensive understanding of how different deposition techniques and conditions influence their structural, electrical, and [36] FE properties is still lacking. Such knowledge is crucial for optimizing fabrication processes and enhancing device performance to meet the stringent requirements of modern electronic applications. ...

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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

... 10,11 The incorporation of scandium (Sc) into AlN has shown significant potential to enhance its piezo performance and electromechanical coupling coefficient and reduce leakage current. [12][13][14] In our previous work, 15 we have deposited RF sputtered AlN thin films at low sputtering power. In the present work, we have further increased the sputtering power to improve crystallinity in the grown films. ...

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Impact of Sc-doping on structural, phase purity, and dielectric properties of AlN thin films

... However, precise determination of the saturated polarization remained challenging due to the high leakage observed in the ultra-thin film. [54][55][56] Next, quasi-DC I-V measurements were conducted to investigate switching performance under slow sweeping conditions. A DC I-V hysteresis measurement was performed on the capacitor, sweeping from 5.2 V to -5.2 V with a 0.025 V step size. ...

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Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode

... This suggests that Mo is a promising top electrode material for FE AlScN thin films, particularly when grown on ultrathin electrodes. Further exploration of the effects of stress on leakage in these films, particularly in 100-nm FE AlScN films sputtered on 50-nm Mo on an 8-inch wafer, demonstrated a direct correlation between in-plane stress and increased leakage, as manifested in Fig. 6f [62]. ...

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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

... Various growth processes and parameters significantly impact the lattice polarity and crystalline quality of FE AlScN thin films, which in turn affect their overall properties. For example, factors such as sputtering power, gas ratio, and substrate choice directly influence key characteristics of the films, including current leakage and P r [55,56]. Early sputtering methods produced FE AlScN thin films with poor quality and little control over lattice polarity, highlighting the need for improved techniques [57]. ...

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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

... The wurtzite materials have served as a type of mature piezoelectric material for a long time due to their promising acoustic application in the microelectromechanical systems (MEMS). 11,12 The discovery of ferroelectricity in the Sc-doped AlN has opened a broad avenue for the study of wurtzite ferroelectrics. 13 In recent several years, the wurtzite ferroelectrics have been intensively studied due to their compatibility with the CMOS technology, and the atomic-scale polarization switching mechanism has also been clarified by the scanning transmission electron microscopy (STEM) approach. ...

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Improving the polarization switching properties of wurtzite AlN by introducing IV–IV/AlN superlattice and P-doping

... 5,15,16 This points to the possibility that leakage currentsespecially at low thicknessmay not be tied intimately to structural defects. 17,18 ...

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Ferroelectric Al$_{1-x}$B$_x$N sputtered thin films on n-type Si bottom electrodes

... Diffraction analyses from bulk regions (Regions 2 and 3, R2 & R3) reveal almost uniform crystalline throughout the film, even at grain boundaries where nitrogen vacancies are prone to accumulate. These optimized fabrication measures effectively suppress oxidation at the interface and nitrogen vacancy formation within the bulk, ensuring superior crystalline and enhanced breakdown characteristics [9], [10]. ...

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Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics