Mengjiao Pei's research while affiliated with Nanjing University and other places

... Biological synapses are mainly composed of presynaptic membrane, synaptic cleft, and postsynaptic membrane. [30] The synaptic cleft contains a substantial amount of neurotransmitters. Upon stimulation of the presynaptic membrane, the neurotransmitter in the synaptic cleft is released and diffuses to the postsynaptic membrane, completing the information transmission. ...

... Photo-excited electron-hole pairs can significantly impact the conductivity of devices by altering carrier concentration at the semiconductor and interface, which can in turn affect the contact barrier [115][116][117][118][119]. Among the mechanisms of the optical modulation barrier, the metal-semiconductor interface contact barrier is the most common. ...

... [16][17][18][19][20][21][22][23][24][25] Despite the rapid progress in the development of photoelectric synaptic devices, most of them have been applied in neuromorphic applications triggered by optical signals predominantly confined to specific wavelengths [26][27][28][29][30][31][32] or a limited wide spectral range from ultraviolet (UV) to visible (vis) light. [33][34][35][36][37][38] Recently, several advancements have been reported to implement the photoelectric synaptic devices induced by optical signals with the spectral range from UV to near-infrared (NIR), [39][40][41][42] while their short-term plasticity restricts the further application in neuromorphic computing. To utilize the superiority of high bandwidth of optical modulation for neuromorphic computing and promote the interconnection efficiency of neuromorphic computing using optical communication, 43,44 it is essential to develop photoelectric synaptic devices with the characteristics of broad photoresponse ranging from UV to NIR and long-term plasticity. ...

... Ferroelectric material is a dielectric material with large application potential because its polarization intensity can be precisely regulated by drain. Take P(VDF-TrFE) as an example [112]. The ferroelectric properties of P(VDF-TrFE) are comparable to those of chalcogenide oxide ferroelectric materials. ...

... To reduce the energy consumption of optoelectrical synapses, Zou et al. [160] fabricated a zero-power optoelectrical synapse based on the ultrathin organic dioctylbenzothien-obenzothiophene (C 8 -BTBT) film in 2021. The organic optoelectronic synapse can be self-driven using the photovoltaic effect induced by asymmetric electrode geometry contact [161,162]. ...

... Hydrogen-bonded ferroelectrics (HBF) are an integral group of ferroelectric materials which play a leading role in modern technology because of their smart properties that enable the electric switching of spontaneously generated polarizations. It is not hard to find the presence of ferroelectrics around us in memories [14], transistors [15], capacitors [16], transducers [17], sensors [18], energy storage [19], etc. Potassium dihydrogen phosphate (KDP) and triglycine sulfate (TGS) are two remarkable candidates of HBF with a great contribution to optical devices [20,21], laser [22] and infrared detectors [23,24]. These are two classical ferroelectrics that have been studied considerably thoroughly and therefore their inherent forms are no longer of interest. ...

... Positive photoresponse were observed with the obvious response discrimination at each illumination intensity. More importantly, the fabricated devices could even detect the UV light intensity as low as 31 nW cm −2 , which was the lowest detectable intensity in organic UV-sensitive phototransistors (Fig. 1f, Table S1) 29,[32][33][34][35][36][37][38][39][40][41][42][43] . By calculating the P based on the ratio of photogenerated current to the dark current under a certain light intensity 44 , the maximum value of P could reach 1.2 × 10 4 under 370 nm wavelength illumination at 1600 nW cm −2 light intensity (Fig. S1a). ...

... TPU insulating polymer was selected as the gate dielectric due to its solution processability, low cost, good storage stability in ambient air, relatively high dielectric constant and large ionization potential compared to P3HT [11][12][13]. As a charge carrier transporting channel is formed at the interface between the P3HT layer and TPU gate dielectric [14], it is important to optimize OFET preparation conditions in order to improve the ordering in P3HT molecules arrangement in an active layer. ...

... Organic Nonvolatile Memory Transistors memory candidates owing nonvolatile data retention capability, a 1-T memory element, easy readout, low programming time, very low energy consumption, and excellent performances [9], [10], [11], [12], [13]. In OFET-NVMs, the drain current depends on the polarization of gate dielectric layer after initiating programming and erasing voltage [14], [15]. ...