М.А. Рябова’s scientific contributions

Local resistive switching in the contact of an atomic force microscope (AFM) probe to ZrO2(Y) films (including those with a Ta2O5 sublayer) on conducting substrates was studied. Switching was performed by triangular voltage pulses with the imposition of a high-frequency sinusoidal signal. The dependence of the difference in the current strength through the AFM probe in the low-and high-resistance States of dielectric films on the frequency of the high-frequency sinusoidal signal was observed at frequencies corresponding to the characteristic frequency of jumps of O2 ions - for oxygen vacancies in ZrO2 (Y) and Ta2O5 at 300K. The effect is associated with resonant activation of O2 ion migration along with oxygen vacancies by an external high-frequency electric field.

The features of resistive switching in the yttria stabilized zirconia films on the conductive substrates by triangle pulses with superimposed high-frequency sinusoidal signal has been studied using Conductive Atomic Force Microscopy. The improvement of the ratio of the values of the electric current through the contact of the probe to the surface of the dielectric film in the low resistant state and in the high resistant one as well as of the long-time scale stability of the values of the electric current through the contact in the respective states when applying the sinusoidal sighnal as compared to the switching by the triangle pulses has been observed. The effect was attributed to the resonant activation of the oxygen ion migration via the oxygen vacancies by the alternating external electric field.