M. Th. Litz's research while affiliated with University of Wuerzburg and other places

Publications (4)

Article
We report on the molecular beam epitaxy and the properties of Be-chalcogenides. Especially the interface between ZnSe and BeTe and superlattices have been studied by means of HRXRD (high resolution X-ray diffraction), HRTEM (high resolution transmission-electron-microscopy), RHEED (reflection-high-energy-electron-diffraction), photo-electron-spectr...
Article
A giant blue shift (≈0.5 eV) and a large decrease in the emission time of a spectral band corresponding to radiative recombination of spatially separated electrons and holes are observed in ZnSe/BeTe superlattices at high laser excitation levels. On the basis of numerical calculations, the observed defects are attributed to band bending arising in...
Article
We have investigated optical properties of ZnTe epilayers, Zn1−xMgxSeyTe1−y epilayers, and ZnTe/Zn1−xMgxSeyTe1−y quantum wells (QWs) grown on (100)-InAs substrates by molecular beam epitaxy. We observed several sharp photoluminescence lines close to the excitonic position and no detectable luminescence from deep levels in ZnTe epilayers. Bright lum...
Article
ZnTe and CdSe with lattice constants of 6.10 and 6.09 Å are nearly lattice matched to InAs with a lattice parameter of 6.06 Å. InAs is available as a high quality substrate material for molecular beam epitaxy (MBE). Reflection high energy electron diffraction (RHEED) and X-ray diffraction studies have been performed to investigate the nature of the...

Citations

... In addition, the lattice parameters of zinc-blende MgSe [29,30] and MgTe [24,31] as well as rock-salt MgSe [17] and MgTe [18] were investigated. Experimental studies on their electronic properties indicate that ZnSe and ZnTe as well as MgSe and MgTe are wide direct fundamental band gap (Γ-Γ) semiconductors in their B3 phase [31,32]. ...
... The potential of such materials for use in different application areas has been established based on experimental studies of the electronic structure [22][23][24][25], optical properties [26,27], and elastic properties [28,29] of bulk CdSe, CdTe, ZnSe, and ZnTe. Experimentally, growth and optical characterization of CdSe thin films [30], characterization of the photosensitivity of CdSe thin films [31], photovoltaic applications of CdTe thin films [32], optical characterization of nanocrystalline CdTe thin films for solar cell applications [33], optical characterization of ZnSe thin films [34], deposition as well as structural and electrical characterization of ZnTe thin films [35], photoluminescence study of ZnTe thin films [36], structural and optical characterization of ZnTe epilayers [37], etc. have been performed for use in different potential applications. ...
... An interesting property of type-II quantum wells is the spatial separation of electrons and holes, which, in the case of ZnSe/BeTe structures, can strongly modify the confinement potentials, resulting in a change of the spectral properties of spatially direct and indirect emissions (see Fig. 1), and of their recombination dynamics [17,18]. ZnSe and BeTe have no common ions, thus enhancing the anisotropy effects caused by the layer interfaces. ...