M. Armstrong’s research while affiliated with Intel and other places

... In the last decade, nanotechnology has continued its relentless progress leading to transistor scaling towards the sub-nm regime [9], outstanding achievements in CMOS-RF circuits towards true terahertz support [10], silicon photonics and other fully integrable photonic technologies [11], and energy harvesting and power transfer means enabling perpetual operation of devices [12], to name a few. Transversal to them all, the last decade has also seen tremendous advances in the synthesis and application of graphene, which in turn heralded the arrival of a new breed of two-dimensional nanomaterials with outstanding opto-electromechanical properties [13], [14]. ...

Reference:

Electromagnetic Nanonetworks Beyond 6G: From Wearable and Implantable Networks to On-Chip and Quantum Communication

... Additional technology considerations for the element optimization including fin geometry and gate flow are detailed in [4] and summarized further in Fig. 11. With the voltage across the element lowered to the nominal voltage of the process, the limit on the number of sense cycles is virtually eliminated and RAM-like on-demand sensing is enabled. ...

Reference:

A 5V-Program 1V-Sense Anti-fuse Technology featuring On-Demand Sense and Integrated Power Delivery in a 22nm Ultra Low Power FinFET Process

... Cost-effective CMOS technology with high transistor density is suitable for beamforming applications of mobile devices. FinFETs have a better maximum oscillation frequency (fMAX) than the planar MOSFET [4,5]. However, the cut-off frequency (fT) of FinFET cannot outperform planar MOSFET [4,6] due to the low electron mobility of its (110) sidewalls. ...

Reference:

RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs

... Although nowadays some manufacturers (e.g. Intel [6], [7]) use significantly reduced channel doping to suppress RD induced fluctuations of device parameters, some other leading companies (such as IBM [8] and TSMC [9]) still employ FinFETs with "conventional" channel doping and therefore RD related variability still remains an issue. ...

Reference:

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs