L. Rebohle's research while affiliated with Helmholtz-Zentrum Dresden-Rossendorf and other places
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Publications (219)
Flash lamp annealing (FLA) is a non-equilibrium annealing method on the sub-second time scale which excellently meets the requirements of thin-film processing. FLA has already been used in microelectronics, mostly after ion implantation, to activate dopants, to recrystallize amorphous semiconductor layers, and to anneal out defects. Another field o...
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as wel...
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By contr...
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By contr...
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature. In this work, we grow MnSi films on Si(100) and Si(111) substrates with a broad variation in their structures. By contr...
For millennia, ceramics have been densified via sintering in a furnace, a time-consuming and energy-intensive process. The need to minimize environmental impact calls for new physical concepts beyond large kilns relying on thermal radiation and insulation. Here, we realize ultrarapid heating with intense blue and UV-light. Thermal management is qua...
Silicon oxide films are widely applied for their superior dielectric, chemical and mechanic properties as well as for their resistance against reactive chemicals. Simultaneously, there is an increasing number of applications which demand a low deposition temperature. In this work, we compare the material properties of SiOx layers deposited on silic...
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as f...
The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching....
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for unders...
Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, whic...
Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, whic...
Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 °C is employed to obtain metallic n ⁺⁺-GaAs layers. The electron concentration in annealed GaAs is as high as 5 × 10¹⁹ cm⁻³, which is several times higher than the doping level achievable by alternative methods. We found that heavily doped n ⁺⁺...
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for unders...
B20‐type transition‐metal silicides or germanides are noncentrosymmetric materials hosting magnetic skyrmions, which are promising information carriers in spintronic devices. The prerequisite is to prepare thin films on technology‐relevant substrates with magnetic skyrmions stabilized at a broad temperature and magnetic‐field working window. A cano...
Using two different types of impedance biochips (PS5 and BS5) with ring top electrodes, a distinct change of measured impedance has been detected after adding 1–5 µL (with dead or live Gram-positive Lysinibacillus sphaericus JG-A12 cells to 20 µL DI water inside the ring top electrode. We relate observed change of measured impedance to change of me...
Silicon substrates with stripe-patterned surface-near electrostatic forces (SNEF) were prepared by local implantation of boron ions into n-type silicon wafers and of phosphorus ions into p-type silicon wafers in a stripe pattern of 12 μm periodicity. The dependence of SNEF on the concentration of implanted ions, post-annealing conditions, and gener...
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (D n V with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P...
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic ban...
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4...
We counted bacterial cells of E. coli strain K12 in several-microliter DI water or in several-microliter PBS in the low optical density (OD) range (OD = 0.05–1.08) in contact with the surface of Si-based impedance biochips with ring electrodes by impedance measurements. The multiparameter fit of the impedance data allowed calibration of the impedan...
The nickel monogermanide (NiGe) phase is known for its electrical properties such as low ohmic and low contact resistance in group-IV-based electronics. In this work, thin films of nickel germanides (Ni–Ge) were formed by magnetron sputtering followed by flash lamp annealing (FLA). The formation of NiGe was investigated on three types of substrates...
Hafnium oxide was deposited from tetrakis(dimethylamino)hafnium (TDMAHf) and water by atomic layer deposition (ALD) on heated 4″ Si wafers covered with native oxide in the temperature range from 100°C to 350°C. Optimized self-limiting ALD reaction and smallest hydrogen impurity level have been realized for a substrate temperature of 300°C. The stoi...
This chapter gives an overview where flash lamp annealing is used in semiconductor applications. After a short introduction to defect engineering several use cases in the field of doping are discussed including ultra-shallow junctions and hyperdoping in silicon, doping and superconductivity in germanium, silicon carbide, III–V semiconductors, and d...
This chapter discusses a couple of issues which are relevant for process management. Thereby, the main focus is on temperature measurement and temperature simulation. The first section deals with pyrometry as the dominating temperature measurement technique in short time annealing, and it addresses the various challenges that come with optical temp...
This chapter gives a brief overview about flash lamp annealing of non-semiconductor materials, although the line to semiconductors is flexible. The first section is devoted to dielectric thin films with the focus on high-k materials and rare earth doping of silicon dioxide. The next section discusses the use of flash lamp annealing for monocrystall...
This chapter addresses various technical aspects of FLA and starts with the individual FLA tool and flash lamp components, followed by a description of the plasma properties during operation. The section about the electric operation of flash lamps deals with IV characteristics of flash lamps and the corresponding circuitries, namely the type of tri...
The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy. The n-typ...
![FIG. 10. (a)-(r) The angular scans about the 100 [(a)-(f)], 110...](profile/Shengqiang-Zhou/publication/333101691/figure/fig3/AS:783431747256325@1563796092966/a-r-The-angular-scans-about-the-100-a-f-110-g-l-and-111-m-r-axes_Q320.jpg)
n-type doping in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we demonstrate that doping Si with the deep chalcogen donor Te by nonequilibrium processing can exceed this limit and yield higher electron concentrations. In contrast...
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron-doped diamond and Si, superconductivity has been observed in gallium-doped Ge; however, the obtained specimen is in polycrystalline form [Phys. Rev. Lett. 102, 217003 (2009)]. Here we present super...
Si hyperdoped with chalcogens (S,Se,Te) is well known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-band-gap absorption. These properties are expected to be sensitive to a postsynthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fa...
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsd\"orfer et al., Phys. Rev. Lett. 102, 217003 (2009...
Crystalline β-Ga 2 O 3 thin films on (100)- and (111)-oriented Si substrates are produced by pulsed laser deposition. The as-deposited thin films are demonstrated to be polycrystalline and contain a slight deficit of oxygen atoms as measured by x-ray diffraction spectroscopy and Rutherford backscattering spectrometry, respectively. The crystallogra...
Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-...
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge−Sn alloys. The heavily doped n-type Ge−Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type G...
Flash lamp annealing (FLA) is a modern annealing technique which, starting from microelectronics, has spread over new application areas like flexible electronics, photovoltaics or thin film deposition. Because of the short annealing time in the range of milliseconds and below, FLA allows the suppression of unwanted processes like diffusion, the ann...
A 200 mm millisecond flash lamp annealing (FLA) prototype was developed beside the EU project DOTSEVEN, named after the target for the maximum oscillation frequency (f max) of 0.7 THz of a SiGe-HBT (Hetero Bipolar Transistor) [1]. The substitution of the final spike annealing (SPA) by FLA reduces the thermal budget despite higher peak temperatures....
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the self-compensation via defect complexes at high impurity concentration. Here we demonstrate that doping with the chalcogen Te, a deep double donor, can break this limit and yield higher electron concentration in Si. Contrary to general expectation...
A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp anneal...
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially re...
A 200 mm flash lamp annealing (FLA) prototype was developed beside the EU project DOTSEVEN, named after the f max target of 0.7 THz. Among different experiments n-type Si (100) wafers (8-12 Ωcm) were implanted with Germanium (5*10 14 /cm²; 15 keV) followed by Boron (B) (2*10 15 /cm²; 1 keV) [1]. FLA with 20 J/cm² results in a suppressed B diffusion...
We report on the hyperdoping of silicon with selenium obtained by ion implantation followed by flash lamp annealing. It is shown that the degree of crystalline lattice recovery of the implanted layers and the Se sub-stitutional fraction depend on the pulse duration and energy density of the flash. While the annealing at low energy densities leads t...
Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural...
Hyperdoped silicon with deep level impurities has attracted much research interest due to its promising optical and electrical properties. In this work, single crystalline silicon supersaturated with titanium is fabricated by ion implantation followed by both pulsed laser melting and flash lamp annealing. The decrease of sheet resistance with incre...
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands. Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an...
Ge was deposited on silicon as a superlattice with 10 layers of Ge embedded in Si3N4 or ZrO2 matrices via plasma enhanced chemical vapor deposition or RF-sputtering, respectively. Raman spectroscopy, transmission electron microscopy and capacitance-voltage (CV) measurements were performed in order to investigate the structural and electrical proper...
The integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this work, we investigate the possibilities to form InAs nanocrystals in a thin Si layer at laterally defined positions with the help of masked ion beam implantation and flash lamp...
Highly scaled nanoelectronics requires effective channel doping above 5 × 10¹⁹ cm⁻³ together with ohmic contacts with extremely low specific contact resistivity. Nowadays, Ge becomes very attractive for modern optoelectronics due to the high carrier mobility and the quasi-direct bandgap, but n-type Ge doped above 5 × 10¹⁹ cm⁻³ is metastable and thu...
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentra...
A controlled manipulation of defects in zinc oxide (ZnO) and the understanding of their electronic structure can be a key issue towards the fabrication of p-type ZnO. Zn vacancy (VZn), Zn interstitials (IZn), and O vacancy (VO) are mainly native point defects, determining the optoelectronic properties of ZnO. The electronic structure of these defec...
The integration of high-mobility III-V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate In x Ga1-xAs nanocrystals and to s...
Logarithmic spirals are found on different length scales in nature, e.g., in nautilus shells, cyclones, and galaxies. The underlying formation laws can be related to different growth mechanisms, pressure gradients, and density waves. Here, we report on the self-organized formation of symmetric logarithmic crystallization spirals in a solid material...
The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap energies pass through Si unabsorbed. This fundamental shortco...
After a short introduction we will highlight processing issues (setup, comparison of annealing methods, relevant requirements for annealing due to doping, diffusion, activation, recrystallization, defect engineering), as well as doping issues for group IV-semiconductors (shallow junctions, hyperdoping, solar cells, superconductivity) and other semi...
Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to th...
Thermal processing in the millisecond range provides advanced, non-equilibrium annealing techniques which allow dedicated material modifications at the surface without affecting the substrate volume below. The process called flash lamp annealing (FLA) is one of the most diverse methods of short time annealing with applications ranging from the clas...
A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation foll...
A combined experimental and theoretical study on the electroluminescent excitation mechanism for trivalent erbium (Er3+) ions in a silicon-rich nitride (SiNx ) host is presented. Direct impact by hot electrons is demonstrated to be the fundamental excitation mechanism. The Er3+ excitation by energy transfer from silicon nanostructures and/or defect...
The electronic band structure of the (Ga,Mn)As system has been one of the
most intriguing problems in solid state physics over the past two decades.
Determination of the band structure evolution with increasing Mn concentration
is a key issue to understand the origin of ferromagnetism. Here we present room
temperature photoluminescence and ellipsom...
Gold surfaces functionalized with nickel-nitrilotriacetic acid (Ni2 +-NTA) as self-assembled monolayers (SAM) to immobilize histidine (His)-tagged biomolecules are broadly reported in the literature. However, the increasing demand of using microfluidic systems and biosensors takes more and more advantage on silicon technology which provides dedicat...
A combination of n-type III-V compound semiconductors and p-type Ge for future CMOS device technology is a possible way to satisfy the demand for higher device performance. In this work, an alternative method to integrate III-V's into Ge is achieved by using a combination of ion implantation and short-time flash lamp annealing. With this process In...
The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs,
GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO2/Si/SiO2 layer stack on Si...
Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films...
Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanc...
