March 2024
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50 Reads
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2 Citations
Physica B Condensed Matter
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Publications (3)
April 2020
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594 Reads
Indonesian Journal of Chemistry
The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.
![Fig 4. (left) Spin texture of SnTe for energy 0.4 eV around Γ-point, (right) Spin texture of SnSe for energy 1.15 eV around M-point. Both have zero z-component of spin. A similar form also occurred in other MX the i-direction of spin component. This spin polarization is calculated in k-space around Γ point by using the spin density matrix of the spinor wave functions obtained from the DFT calculation [21-23]. The calculation result is shown in Fig. 4. It is revealed that constant-energy surface shows the inner and outer circles with counterclockwise and clockwise rotation of spin direction with no z-component of spin. This feature is consistent with the characteristic of the Rashba effect splitting. The observed spin texture can be explained based on our derived SOC Hamiltonian given in Eq. (1). The expectation value of the spin polarization can be calculated from this to get ⟨S x ⟩ ± = ±Yℏ �(X 2 +Y 2 ) , ⟨S y ⟩ ± =](https://www.researchgate.net/profile/Ibnu-Jihad/publication/341524937/figure/fig2/AS:893321044049926@1589995742720/left-Spin-texture-of-SnTe-for-energy-04-eV-around-G-point-right-Spin-texture-of_Q320.jpg)
January 2020
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860 Reads
Citations (1)
... For the graphene-containing composites, the band offset is determined as ∆E v = 1.09 eV for reduced GO, and ∆E v = 1.17 eV for the nitrogen-doped graphene, respectively. These values indicate a very small change of the band In case of nitrogen-doped graphene, it is generally accepted [41] that nitrogen doping is opening the bands and is creating a bandgap near Dirac point while shifting the Fermi level up to the type of nitrogen atoms (n-or p-type). In the present study, nitrogen-doped graphene shows similar band alignment properties as reduced GO, but less charge transfer of the photogenerated electrons. ...
- Citing Article
March 2024
Physica B Condensed Matter