Katsuya Usui's research while affiliated with Tokyo University of Science and other places
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Publications (2)
The physical properties and electronic structure of c-axis-oriented Ti1−xFexO2−δ thin films have been studied by soft X-ray spectroscopy. The c-axis lattice constant increases with increasing Fe concentration. Fe ions have mixed valence states of Fe2+ and Fe3+ with a high-spin configuration. The intensity of the unoccupied Ti 3d state decreases and...
Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub = 300 ~ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spec...
Citations
... Conduction properties of undoped TiO 2 thin film with anatase or rutile structure can be controlled from an insulator phase to semiconductor or metal phase by substitution of different ion on the Ti 4+ site. [1][2][3][4][5][6][7][8][9][10] Typical materials are Nb 5+ -doped TiO 2 (Ti 1Àx Nb x O 2 ), [2][3][4][5] Ta 5+ -doped TiO 2 (Ti 1Àx -Ta x O 2 ) 6) and Co-doped TiO 2 (Ti 1Àx Co x O 2À ). 7,8) Hitosugi et al. has reported that the anatase-type Ti 0.95 Ta 0.05 O 2 epitaxial thin film prepared by pulsed laser deposition exhibits a low resistivity of 2:5 Â 10 À4 Ω cm, carrier density of 1:4 Â 10 21 cm −3 and high internal transmittance of 95% in the visible light region at room temperature (R.T.). ...
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