John Robertson's research while affiliated with University of Cambridge and other places

Publications (8)

Article
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Outstanding photovoltaic (PV) materials combine a set of advantageous properties including large optical absorption and high charge carrier mobility, facilitated by small effective masses. Halide perovskites (ABX3, where X = I, Br, or Cl) are among the most promising PV materials. Their optoelectronic properties are governed by the BX bond, which...
Preprint
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Third-generation photovoltaic (PV) materials combine many advantageous properties, including a high optical absorption together with a large charge carrier mobility, facilitated by small effective masses. Halide perovskites (ABX3, where X is I, Br or Cl) appear to be the most promising third-generation PV materials at present. Their opto-electronic...
Article
Full-text available
GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which all...
Article
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A long-standing question for avant-grade data storage technology concerns the nature of the ultrafast photoinduced phase transformations in the wide class of chalcogenide phase-change materials (PCMs). Overall, a comprehensive understanding of the microstructural evolution and the relevant kinetics mechanisms accompanying the out-of-equilibrium pha...
Article
Full-text available
The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-chan...
Article
Full-text available
We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov sta...

Citations

... Others have noted the absence of deep level defects. 13,14 Wuttig et al. 15 recently noted that the p-p transition between an unusual B-X multi-centered bonding contributes 92% of their optical absorption below 4 eV while the s-p transition contributes only 8%. They also showed that the p-p transition is mainly responsible for small effective masses of electrons and holes at the R point based on a simple tight-binding model. ...
... This is consistent with the reported total energy of the odd layers of a GeTe block in a GeTe/Sb 2 Te 3 SL structure. [28] These observations strongly indicated that previously proposed switching models for iPCM should be revised with consideration to the Teterminated GeTe block and Ge/Sb intermixing. ...
... When studying time-resolved PCM crystallization and amorphization there is a limit of the fluence, known as threshold fluence [44], over which the processed spot shows Reflective pixel [38] an irreversible change after the preceding pump pulse, thus, each measurement needs to be performed on a fresh region of sample or the sample has to be moved between single measurements and has to be homogeneous over the investigated area [45]. Non optical methods such as time-resolved X-ray absorption [46,47], time-resolved X-ray diffraction [48,49] and time-resolved electron diffraction [44] has been applied to the study of PCM. Similarly, time resolved optical methods have been applied to study both phenomena, the ones happening above (single shot approach) and the ones below the fluence threshold in the reversible state of the system. ...
... Recently, transmission electron microscopy (TEM) experiments and density functional theory (DFT) calculations demonstrated that the atomic structures of the iPCM differed from those of the existing models in explaining low-(LRS) and high-resistance (HRS) states. [11,[17][18][19][20][21][22] iPCM determined that Ge and Sb atoms inevitably intermixed [11,17] and that Ge atoms were predominantly located near the GeSbTe (GST) block core in the GeTe/ Sb 2 Te 3 SL. [11,18,19] Additionally, randomly distributed vacancies in GST building units were transformed into ordered vacancy layers. ...
... Because these four phases exhibit distinct abc-atomic site occupancies and exclude tetrahedral local environments, the reported phase-change mechanisms in their structure models inevitably include the gliding of the atomic plane rather than a transition in the local environment of elements. 31,37,38 However, because gliding is a collective motion of atoms considered as the origin of the second-order transition, it contradicts the superior cyclability (~10 9 ) and ...