J. Tallal's research while affiliated with French National Centre for Scientific Research and other places

Publications (23)

Article
Precise localization of nanoparticles is often required to fully exploit the intrinsic physical properties as well as to develop methodologies for large-scale integration of nanodevice building-blocks with the macroscopic world. In this work, a simple technique, based on control of capillary forces at the triple contact line during evaporation, was...
Article
Resist pull-off during mold-substrate separation is one of the major limiting factor for high resolution replication using nanoimprint lithography (NIL). Adhesion properties of anti-sticking layers (ASLs) are generally obtained using contact angle measurements; however, this technique does not take into account mold penetration into the polymer and...
Article
We present the development of a reliable 4 in. lift-off process based on trilayer nanoimprint lithography (NIL). At first, an inductively coupled plasma etching step of the imprinted resist is used to remove the residual resist thickness after NIL for different pattern geometry and density, while maintaining the critical dimensions of the studied p...
Article
We present the replication of sub-40nm nanoelectrodes over an 8-in. silicon wafer using nanoimprint lithography (NIL). Three different NIL polymers (NEB22A2, PMMA and Polycarbonate) are investigated as potential replication candidates. For each polymer resist, we study the single step imprint of both micrometric contact pads and nanoelectrodes. Flo...
Article
Uniformity of the printing process is one of the key parameters of nanoimprint lithography. This technique has to be extended to large size wafers to be useful for several industrial applications, and the uniformity of micro and nanostructures has to be guaranteed on large surfaces. This paper presents results of printing on 200 mm diameter wafers....
Article
Nanoimprint lithography is a promising technique which should allow good lithography to be achieved on a large surface in a short time and by a relatively simple process. Printing processes have been already demonstrated on 6-in. wafers with a few patterns distributed across the surface. In this paper, results of fully printed 8-in. wafers are pres...

Citations

... Additional challenges in implementing our system are: (1) possibility of reduced spatial resolution due to deformation of the nanoaperture structure from photothermal annealing [43], and (2) possibility of reduced performance in near-fields due to difficulty in fabrication of uniform and reproducible nanoaperture [34]. In the near future, we expect the short time of the near-field localization and novel lithographic techniques will overcome these challenges [44]. As a next step, we will implement the proposed SR-PAM system and experiment with single cell membrane structure. ...
... Metal nanoelectrodes with less than 100 nm in lateral side and a few microns of longitudinal size have attracted a great deal of attention in recent years because of the advantages they present, such as higher current density and higher signal-to-noise ratio compared to conventional microelectrodes [1]. Electrodes with nanometrical width and inter-electrode spacing have been fabricated by nanoimprint lithography (NIL)234 or focused-ion-beam lithography (FIB) [5] and have been used in a large variety of applications, e.g. for contacting single molecules678, for impedimetrical biosensing91011 or for conducting nanoelectrochemical tests [12, 13]. Regarding biodetection purposes, interdigitated nanoelectrode devices (INDs) combine the aforementioned confinement effects with large areas, enabling one to combine sensitivity and fast response time. ...
... Based on this analysis it can be concluded that at low liquid elevation, the submerged particles experience strong lateral and vertical capillary forces due to a large 'capillary charge' that causes strong interaction. Similar conclusion was reported by Peyrade et al. [19]. Using the current expressions for calculating the VCF and LCF via the macroscopic parameters, the conversion time with the necessary numerical calculations can delay the simulation significantly . ...
... The structure of a trilayer stack consists of a bottom polymer, a middle layer and a top polymer layer. The bottom polymer is usually PMMA followed by the middle layer made of titanium or germanium [25]. The top layer is photosensitive resist, acrylate oligomers or polyester amide depending on the manufacturing technology [22,26]. ...
... In this work, microelectronic fabrication technology is applied for the development of the nanoelectrode based biosensor. Processes such as photolithography and thermal processes like oxidation and deposition are used to make dedicated design on top of silicon wafer surface [5][6][7]. This paper is mainly focused on the thermal processes and thickness inspection on certain layers. ...
... Tackling these problems is accelerated by application of the atomic force microscopy (AFM) [7]. AFM enables relatively fast testing of interfacial properties between pairs of materials. ...
... With optical lithography, these windows result in a straightforward way by complete removal of the photoresist in exposed regions during development. However, with NIL, this is not naturally the case due to the residual layer, typically remaining with T-NIL (thermal NIL [1,10,[20][21][22][23]) and with UV-NIL (ultraviolet-assisted NIL [2,3,[24][25][26][27]) as well. Without specific precautions, a certain amount of imprint material always remains below the elevated stamp structures (see Figure 1a). ...
... This method has similar throughput to the P2P method, however, it can reduce the total required force by changing the surface contact to a line contact. P2P based 8 inch wafers can take 20,000 N of imprint force [157], however, the R2P method only needs 200 N for a 300 mm width imprint. Flexible polymer film based R2P methods were also introduced as shown in Figure 8b [158,159]. ...