Ivan Vlassiouk’s research while affiliated with Oak Ridge National Laboratory and other places

What is this page?


This page lists works of an author who doesn't have a ResearchGate profile or hasn't added the works to their profile yet. It is automatically generated from public (personal) data to further our legitimate goal of comprehensive and accurate scientific recordkeeping. If you are this author and want this page removed, please let us know.

Publications (131)


Si‐Gr tunneling junction schematic, fabrication, and images a) Optical image of a Si‐Gr tunneling junction device, showing a circular Si‐Gr contact (grey), the insulating SiO2 layer (purple), and the two arc‐shaped gold contacts (pink). The edge of the graphene disk is indicated by a dotted circle. b) Schematic cross‐section of the Si–Gr tunneling junction. c) Workflow of device fabrication, from left to right: Si/SiO2 substrate with a circular region of removed SiO2; graphene transferred on top of the substrate; graphene patterned into a disc slightly larger than silicon opening; two gold contacts deposited at the edges of the graphene disk. d) AFM image shows a clean flat surface of the graphene layer.
Charge carrier momentum distributions in n‐Si‐Gr and p‐Si‐Gr junctions, and their effects on quantum tunneling. a) The transverse momentum distributions in n‐Si‐Gr (left) and p‐Si‐Gr (right) tunneling junctions. The Fermi surface of n‐type is labeled in red and the p‐type is in blue. These two types of silicon wafers have different transverse momentum components projected on the tunneling junction interfaces (shown as the light blue surface), leading to different momentum mismatch with the K/K’ valleys (the Fermi rings) of graphene. b) Band alignment of n–Si–Gr (left) and p–Si–Gr (right) junctions. c) Temperature‐dependent tunneling current measured at the bias of 0.6 V. Red: n‐Si‐Gr device. Blue: p—Si–Gr device. d) IV curves of p‐type and n‐type silicon devices measured at 5 K (magnified IV curve of p‐type device in inset). e) First‐order tunneling spectra of the n–Si–Gr and p–Si–Gr junctions. f) Energy level diagram of the p‐Si‐Gr junction showing phonon‐assisted inelastic tunneling.
Interfacial conditioning with gold nanoparticles for momentum mismatch compensation and establishment of ohmic‐like contacts. a) Schematic of device with gold nanoparticle decoration at the silicon‐graphene interface. SiO2 (blue) isolates silicon from graphene everywhere except for the opening (grey). Gold nanoparticles (yellow) are deposited on silicon surface then covered by graphene layer. b) The Fermi surfaces of p‐type silicon and gold, and the projection of their transverse momentum components. The purple arrow denotes the momentum compensation provided by elastic scattering on the gold Fermi surface, while the red arrow represents phonon‐assisted inelastic scattering providing momentum compensation. c) IV curves of p–Si–Gr junctions without gold conditioning (blue curve) and with gold nanoparticles at the Si–Gr interface (red curve) (inset shows the magnified IV curve of device without Au.). d) First order tunneling spectrum of p–Si–Gr junction with gold nanoparticles at the interface. The dashed lines indicate the pseudo‐gap associated with phonon‐assisted inelastic tunneling. e) Histogram of current at 0.5 V bias for different thicknesses of gold. f) First order tunneling spectra of p–Si–Gr junctions for different thickness of gold between silicon and graphene (blue curve without gold, red curve with 0.2 nm of gold, green curve with 2 nm of gold and purple curve with 10 nm of gold).
Scattering via external interface decoration. a) Illustration of a device with metal nanoparticle decoration outside surface of the graphene. b) IV curves of the device with 2 nm gold on top (blue curve) and 2 nm platinum on top (red curve) (inset shows the magnified IV curve of device with 2 nm gold on top). c) First order tunneling spectrum of p‐Si‐Gr junction with 2 nm of gold nanoparticles outside the interface. d) The Fermi surfaces of p‐type silicon, graphene and gold showing two‐step electron transfer process. e) The Fermi surfaces of p‐type silicon, graphene and platinum showing two‐step electron transfer process. f) First order tunneling spectrum of p–Si–Gr junction with 2 nm of platinum nanoparticles outside the interface. The dashed lines indicate the pseudo‐gap associated with phonon‐assisted inelastic tunneling.
Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction
  • Article
  • Full-text available

November 2024

·

42 Reads

·

·

·

[...]

·

Sidong Lei

The difficulty of achieving ohmic contacts is a long‐standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their electronic properties and those of both traditional metal‐based and van der Waals (vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene‐silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the electronic properties of vdWs contacts. By judiciously introducing scattering centers at the interface that provide additional momentum to compensate the momentum mismatch, the junction conductivity is enhanced by more than three orders of magnitude, enabling the formation of high‐quality ohmic contacts. The study establishes the framework for the design of high‐performance ohmic vdWs contacts based on both energy and momentum matching, which can facilitate efficient heterogeneous integration of 2D–3D systems and the development of post‐CMOS architectures.

Download





Armor for Steel: Facile Synthesis of Hexagonal Boron Nitride Films on Various Substrates

October 2023

·

36 Reads

·

4 Citations

While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N 2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.



A More Controllable Laser Reduction of Graphene Oxide Membrane for Electrode Applications

August 2023

·

4 Reads

ECS Meeting Abstracts

Reduced graphene oxide (rGO) has attracted significant attention as an active electrode material for sensors and flexible energy devices due to its high electric conductivity and large surface area. rGO is usually obtained from graphene oxide(GO) through a thermal, chemical, photochemical, and electrochemical reduction process. Compared to the other reduction strategy, laser reduction is a single-step, precise, low cost, and chemical-free processing that can be directly applied on the GO membrane at room temperature in an ambient condition.The laser irradiation parameter, such as laser source, power, speed, and frequency, plays an important role in reduction optimization. In general, the quality of the rGO is not as high as that of pristine graphene because of incomplete reduction, and oxygenated defects involved in the reduction process.The not fully removed oxygenated function group not only influence the sensitivity and selectivity of the electrode, but also influences response time and recovery time during sensing and the electrochemical window of the supercapacitor made with those rGO electrode. This study aims to develop reduced graphene oxide (rGO) through laser irradiation for application in supercapacitors and electrochemical sensors as electrodes. GO membranes were fabricated with a layer-by-layer assembly process first then further reduced through conventional CO2 laser reduction. The laser irradiation parameters including intensity, frequency, and scan speed will be optimized to achieve the reduction up to maximi, C/O ratio. The effects of the reduction will be characterized and evaluated using scanning electron microscope (SEM), Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy, X-ray diffraction (XRD)spectroscopy, and four-point probe station. The influence of the humidity on the impedance of the rGO electrode and the capacitance of the planar supercapacitor made with rGO electrode will also be analyzed for potential application of as-prepared rGO electrodes in supercapacitors and humidity sensors.


SEM image of (A) as synthesized graphene on Cu foil, and (B) etch pits on graphene|Cu after 5 s acid etch test with 0.1 M FeCl3. (C) Raman spectrum of graphene transferred onto 300 nm SiO2/Si substrate and (D) schematic of graphene transfer process to Nafion (N211)
Optical images of graphene transferred to Nafion (N211) via hot-press (∼140 °C,∼200 psi) for (A) 120 s, and (B) 45 s. Blue arrows indicate spot like defects that correspond to damages in graphene via oxidation of Cu. Hot-press for longer duration leads to line like larger features (A and Table 1) corresponding to Cu oxidation and damage to graphene. (C) Comparison of % defect area for different hot-press times
SEM images of graphene transferred to Nafion 211 at (A) 140 °C (>Topt), (B) 115 °C (∼ Topt) and (C) 110 °C (<Topt). At higher temperatures, spot like features similar to damage to graphene on Cu foil via oxidation of Cu underneath defects in graphene are observed (orange arrows in A). At lower temperatures, ruptured regions where graphene did not adhere to Nafion well are seen from the flipped over regions near edges (purple arrows). (D) Analysis of defective area attributed to oxidation (orange bars) and ruptures (purple bars) shows a trade-off in defect types with a minima ∼115 °C. Inset shows the DSC plots for as received and hot-pressed N211-H⁺ form membrane. A dotted line shows the Topt ∼115 °C which is near the end of the glass transition region of N211 polymer. Schematics of the graphene|Nafion interface (E) T > Topt, (F) T ∼ Topt and (G) T < Topt, where Topt is the optimum temperature of hot-press. When T > Topt, the Nafion conformally contacts the graphene surface. However, the high temperature tends to oxidize the Cu foil underneath defects in graphene (orange circles). At T < Topt, the Nafion does not make conformal contact (white patches) resulting in regions of patchy graphene transfer. Upon etching the Cu foil, these poorly-adhered regions tend to delaminate from the Nafion and are seen as a patch next to the ruptured area, as shown in (C)
Graphene transfer on Nafion at 115 °C, hot-pressed at pressures (A) 200 psi, (B) 1000 psi for 45 s. (C) and (D) At higher pressure the ruptures in the transferred graphene increase due to increase in metal deformation of the Cu foil (note Cu is a soft and malleable metal which is subject to deformation/elongation under pressure). Such metal deformation results in ruptures to the graphene on Cu (see schematics)
Gas phase proton transport measurements for PEM membrane-electrode assembly (MEAs) prepared via hot-press at 115 °C, 200 psi and 45 s. (A) Custom-built experimental set-up, (B) schematic of the MEA, (C) I–V plots with symmetric gas feed i.e. H2 gas on both sides of the MEA, (D) I–V plots exhibiting the hydrogen crossover current segment measured with H2 on one side and N2 gas feed on the other. (E) Area specific resistance (ASR) and areal conductance extracted from (C). (F) Crossover current density extracted from (D) at 0.4 V for N211||N211 control and N211|G|N211 membranes
The parameter space for scalable integration of atomically thin graphene with Nafion for proton exchange membrane (PEM) applications

July 2023

·

121 Reads

·

5 Citations

Selective proton permeation through atomically thin graphene while maintaining impermeability to even small gas atoms i.e. He or hydrated ions, presents potential for advancing proton exchange membranes (PEMs) across a range of energy conversion and storage applications. The incorporation of graphene into state-of-the-art proton conducting polymers e.g. Nafion can enable improvements in PEM selectivity as well as mitigate reactant crossover. The development of facile integration approaches are hence imperative. Here, we systematically study the parameters influencing the integration of monolayer graphene synthesized via scalable chemical vapor deposition (CVD) on polycrystalline Cu foils with a model proton conducting polymer (Nafion) via a facile hot-press process. The hot-press time (t), temperature (T) and pressure (P) are found to not only influence the quality of graphene transfer but can also introduce additional defects in the CVD graphene. Graphene transfers to Nafion performed below the optimum temperature (Topt ∼ 115 °C) remain patchy with ruptures, while transfers above Topt showed defect features, and transfers near Topt show minimal ruptures and defect features. We demonstrate Nafion|graphene|Nafion sandwich membranes using the optimal transfer conditions that allow for ∼50% reduction in hydrogen crossover (∼0.17 mA cm⁻²) in comparison to Nafion control membranes (∼0.33 mA cm⁻²) while maintaining comparable proton area specific resistance < 0.25 Ω cm² (areal conductance ∼ 4–5 S cm⁻²), that are adequate to enable practical PEM applications such as fuel cells, redox flow batteries, and beyond.


Experimental Studies of Graphene-Coated Polymer Electrolyte Membranes for Direct Methanol Fuel Cells

November 2022

·

10 Reads

·

5 Citations

Journal of Electrochemical Energy Conversion and Storage

The two main technical limitations of direct methanol fuel cells (DMFCs) are the slow kinetic reactions of the methanol oxidation reaction (MOR) in the anode and the crossing over of unreacted methanol through the proton exchange membrane (PEM). It is common practice to use Nafion membranes as PEMs, which have high ion exchange capacity. However, Nafion-based membranes also have high fuel permeability, decreasing fuel utilization and reducing the potential power density. This manuscript focuses on using graphene-coated (Gr-coated) PEMs to reduce fuel crossover. Protons can permeate across graphene and thus it can be employed in various devices as a proton conductive membrane. Here we report efficiency of Gr-coated Nafions. We tested performance and crossover at three different temperatures with four different fuel concentrations and compared to a Nafion PEM that underwent that same test conditions. We found that the adhesion of Gr on to PEMs is not sufficient for prolong fuel cell operation resulting in Gr delamination at high temperatures leading to a higher fuel crossover values compared to lower temperature testing. The results for 7.5M methanol fuel show a reduction of up to 25% in methanol crossover, translating to a peak power density that increases from 3.9 to 9.5 mW/cm2 when using a Gr-Coated PEM compared to a Nafion PEM at 30°C.


Citations (73)


... The SHG light was collected in backscattering configuration using the same objective and was directed to a monochromator (Spectra Pro 2300i, Acton, f = 0.3 m) that was coupled to the microscope and equipped with a 150 grooves per millimetre grating and a charge-couple device (CCD) camera (Pixis 256BR, Princeton Instruments). Before entering the monochromator, the SHG light was passed through a short-pass cut-off filter (650 nm) to filter out the fundamental excitation light at 800 nm and a polarizer to select SHG polarization colinear or cross relative to the polarization of the excitation light 48 . A motorized computer-controlled XY microscope stage (Marzhauser) with minimum scanning steps of 100 nm was used to perform SHG mapping. ...

Reference:

On-demand nanoengineering of in-plane ferroelectric topologies
Armor for Steel: Facile Synthesis of Hexagonal Boron Nitride Films on Various Substrates
  • Citing Article
  • October 2023

... 18,21 It was shown that the hydrogen crossover could be reduced 8-fold by introducing SLG between Nafion membranes. Chaturvedi et al. 17 deployed a similar transfer of SLG from a copper substrate and studied the effect of hot-pressing parameters on the transfer process. They also reported a reduction of hydrogen crossover by around 50% in a custom-built experimental setup at room temperature. ...

The parameter space for scalable integration of atomically thin graphene with Nafion for proton exchange membrane (PEM) applications

... Free-standing GO membranes [12] with varying thicknesses between 10 and 16 µm were adhered on flexible substrates with GO solution and left to dry overnight. The GO membrane was reduced using a conventional CO 2 laser engraver (Epilog Fusion Pro, wavelength: 1065 nm) under ambient conditions (21 • C, 30% RH). ...

Using Al3+ to Tailor Graphene Oxide Nanochannels: Impact on Membrane Stability and Permeability

Membranes

... Atmospheric pressure chemical vapor deposition (AP-CVD) grown graphene 48 was transferred to a Protochips heater chip using the graphene-water membrane transfer technique. 49 Prior to loading, the sample, cartridge, and microscope magazine were baked under vacuum at 160 °C for eight hours. A Nion UltraSTEM U200 was used for imaging, operating at an accelerating voltage of 100 kV, a nominal beam current of 66 pA, and a convergence angle of 30 mrad. ...

Discovery of Graphene‐Water Membrane Structure: Toward High‐Quality Graphene Process

... When the full coverage is achieved, the growth rate can be expressed as v = 1/t. To the best of our knowledge, the graphene growth rate obtained in this work is much higher than that in reported literature for graphene grown on nonmetallic substrates, even on metal substrates such as Ni and Ni−Cu alloy 21,25,[39][40][41][42][43][44] , as summarized in Fig. 2c. For different growing conditions, such as hydrogen-to-dichloromethane (H 2 /CH 2 Cl 2 ) or hydrogento-methane (H 2 /CH 4 ) ratios of 5, 8, 16, 20, and 25, the growth rates of graphene on GFF in the dichloromethane system also kept at~3 orders of magnitude higher that of methane ( Supplementary Fig. 8), verifying the effectiveness of dichloromethane precursor for accelerating graphene growth. ...

Combinatorial Cu-Ni Alloy Thin-Film Catalysts for Layer Number Control in Chemical Vapor-Deposited Graphene

... We previously reported that surface tension measurements of GO sheets at the airwater interface are indicative of the extent of sheet hydrophobicity and how the addition of Al 3+ affects the assembly of the GO sheets as the membrane dries [22,23]. Previous studies have also shown that the interfacial activity of GO sheets is highly dependent on the solution pH, and that the surface tension of a GO sheet solution decreases with decreasing pH [28][29][30]. ...

In-plane and Through-plane Dielectric Properties of Graphene Oxide Membrane: Effect of Al3+ Modification
  • Citing Article
  • April 2022

Materialia

... Protons, as one form of hydrons 9 , can translocate through graphene and other 2D materials such as hexagonal boron nitride (h-BN) 10 and 2D mica 11 at room temperature, making two-dimensional (2D) materials promising candidates for proton-exchange membrane applications 12 . Beyond monolayer 2D materials, proton transport has also been demonstrated using 2D laminates (i.e., 2D crystals assembled in a layered structure, made from graphene akes 13 , and other 2D nanosheets 14,15 , and covalent organic frameworks 16 ), making them suitable for membrane-based applications. ...

Deconstructing Proton Transport Through Atomically Thin Monolayer CVD Graphene Membranes
  • Citing Article
  • January 2022

Journal of Materials Chemistry A

... On the other hand, Ni and Co have higher carbon solubility, which facilitates a surface segregation growth mechanism, and are endowed with the capacity to modulate the dissolved carbon content to manage the layer number of GRs. For a typical evidence, the crucial species on the CuNi are C dimers, which are more stable at the bordering region between first-layer graphene and CuNi catalyst [26] as well as more mobile on metal catalyst, [27] thereby facilitating to growth of the uniform bilayer graphene. Therefore, the Cu ribbon with the underlying Ni adhesion layer would be a promising metal substrate for fabricating the bilayer GRs. ...

Unique Role of Dimeric Carbon Precursors in Graphene Growth by Chemical Vapor Deposition

Carbon Trends

... Chlorins show inherent higher absorption intensities than porphyrins. [21][22][23][24] Chlorophyll based chlorins like chlorin e 6 trimethylester 3 possess already an acceptor substituent with the carboxylate function in position 13. The vinyl group of 3 opens the possibility to introduce a donor moiety strictly opposite to the already existing acceptor group. ...

Symmetry Effects in Photoinduced Electron Transfer in Chlorin‐Quinone Dyads: Adiabatic Suppression in the Marcus Inverted Region

... It should be pointed out that the EDL model assumes that (1) ions are point charges and only interact through Coulombic interactions; (2) there are no ion-ion correlations; (3) water is a homogeneous dielectric continuum [4]. Therefore, the EDL model is only suitable for aqueous solutions at relatively low concentrations, while it does not match numerous experiments at relatively high concentrations [26][27][28][29]. ...

Nanoscale Mapping of the Double Layer Potential at the Graphene-Electrolyte Interface

Nano Letters