March 2025
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7 Reads
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Publications (24)
January 2025
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10 Reads
December 2024
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1 Read
September 2024
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7 Reads
September 2024
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4 Reads
September 2024
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8 Reads
September 2024
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7 Reads
August 2024
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183 Reads
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2 Citations
In this work, we demonstrate SiC/high-κ MOS capacitors with low leakage density of 10⁻⁸ Acm⁻², good device uniformity, good thermal stability (> 800 °C), and longer oxide lifetime > 104 s simultaneously. This is enabled by using atomic layer deposition (ALD) processed- HfAlO as the gate dielectric with a thickness of 35 nm, smooth surface (RMS roughness =0.70 nm), and high-quality SiC/ HfAlO interface with interface density (Dit) of 8×1010 eV⁻¹cm⁻².
March 2024
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40 Reads
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3 Citations
January 2024
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126 Reads
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8 Citations
In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al0.7Sc0.3N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm² and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of <2%. Additionally, the devices demonstrate stable multistate memory characteristics with a dedicated operation scheme. The back-end-of-line (BEOL)-compatible fabrication process, along with all these device performances, shows the potential of AlScN-based capacitors for the implementation of the high-density selector-free memory array.
Citations (9)
... A narrower hysteresis loop reflects minimal charge trapping within the TiO 2 films and at the TiO 2 /Si interface. 21,62 The interface trap density (D it ) was evaluated using the Terman method 63 and the results are presented in Table V. The as-deposited sample exhibits the highest D it value of 22 × 10 12 cm −2 eV −1 , which significantly decreased to 5.5 × 10 12 cm −2 eV −1 after annealing at 525°C. ...
- Citing Article
- Full-text available
August 2024
... The survey of k 2 eff from published SAWRs and FBARs, while all f r are above 1 GHz. 7,12,21,[24][25][26][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] ...
- Citing Conference Paper
December 2023
... These results suggest a minimal "size effect" on the P r value of (Al,Sc)N films. 92,93) ...
- Citing Article
- Full-text available
January 2024
... However, precise determination of the saturated polarization remained challenging due to the high leakage observed in the ultra-thin film. [54][55][56] Next, quasi-DC I-V measurements were conducted to investigate switching performance under slow sweeping conditions. A DC I-V hysteresis measurement was performed on the capacitor, sweeping from 5.2 V to -5.2 V with a 0.025 V step size. ...
- Citing Conference Paper
July 2023
... Various growth processes and parameters significantly impact the lattice polarity and crystalline quality of FE AlScN thin films, which in turn affect their overall properties. For example, factors such as sputtering power, gas ratio, and substrate choice directly influence key characteristics of the films, including current leakage and P r [55,56]. Early sputtering methods produced FE AlScN thin films with poor quality and little control over lattice polarity, highlighting the need for improved techniques [57]. ...
- Citing Article
July 2023
Applied Surface Science
... Diffraction analyses from bulk regions (Regions 2 and 3, R2 & R3) reveal almost uniform crystalline throughout the film, even at grain boundaries where nitrogen vacancies are prone to accumulate. These optimized fabrication measures effectively suppress oxidation at the interface and nitrogen vacancy formation within the bulk, ensuring superior crystalline and enhanced breakdown characteristics [9], [10]. ...
- Citing Conference Paper
October 2022
... This is because the Sc element has a higher O affinity than the Al element. [43] However, there is no obvious enrichment of the O element at the interface. Therefore, the polarity reversal and the formation of the buffer layer are not the effects of O element. ...
- Citing Article
September 2022
... 30 However, sputtered films are typically polycrystalline, with broad x-ray diffraction (XRD) peaks. [31][32][33] Epitaxial growth of wurtzite ScAlN via MBE and MOCVD offers superior control over phase purity, composition, crystallinity, defect density, doping concentration, unintentional impurity incorporation, bandgap engineering, polarization, and lattice polarity compared to sputtering. 17,[34][35][36][37] In 2017, Hardy et al. reported the first MBE-grown ScAlN on GaN and SiC substrates. ...
- Citing Conference Paper
June 2022
... The diameter of the columnar grains ranges from 30 to 50 nm, which is comparable to our previous data on Al0.85Sc0.15N film [10]. Due to remarkable image contrast difference, a thin layer was noticed on the AlScN film surface. ...
- Citing Conference Paper
September 2021