Hong Siang Tan’s scientific contributions

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Publications (1)

Fig. 6. EDX (a) spectrum and (b) mapping of the copper pillar bump.
Fig. 7. C-SAM anomaly was detected at the die edge.
Fig. 8. 3D X-ray image at the C-SAM anomaly location.
Fig. 10. Active damage was observed on the die.
Fig. 12. Optical image of the unit at the AOI after MIP etching with slight discoloration of the die metal observed at the C-SAM anomaly location.

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Oxygen-Based Microwave Induced Plasma Etching for Epoxy Molding Compound Removal in Advanced Semiconductor Devices
  • Conference Paper
  • Full-text available

July 2023

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295 Reads

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1 Citation

Hong Siang Tan

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Bernice Zee

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Mark McKinnon

Heterogenous integration has led to the development of advanced semiconductor packages with better performance and smaller form factor. Such packages usually comprise of multiple dies and embedded components which are encapsulated with epoxy molding compounds (EMCs) to improve the reliability performance and to protect the die from external impact. However, this increases the difficulty of failure analysis (FA) as the defects may manifest in the embedded components that are covered by EMCs. Suitable sample preparation techniques and workflows are required to remove EMCs to reveal the defects to determine the root cause of failure. This paper explores the use of microwave induced plasma (MIP) etcher to remove EMCs. Tool parameters are varied to understand their effects on the removal rate of EMCs such as underfill.

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