H. Fujioka’s research while affiliated with Fukui University of Technology and other places

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Publications (58)


Computer-assisted lesion detection system for stomach screening using stomach shape and appearance models
  • Article

March 2007

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13 Reads

Proceedings of SPIE - The International Society for Optical Engineering

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M. Nakamura

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M. Takashima

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[...]

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H. Fujioka

In Japan, stomach cancer is one of the three most common causes of death from cancer. Since periodic health checks of stomach X-rays have become more widely carried out, the physicians' burdens have been increasing in the mass screening to detect initial symptoms of a disease. For the purpose of automatic diagnosis, we try to develop a computer-assisted lesion detection system for stomach screening. The proposed system has two databases. One is the stomach shape database that consists of the computer graphics stomach 3D models based on biomechanics simulation and their projected 2D images. The other is the normal appearance database that is constructed by learning patterns in a normal patient training set. The stomach contour is extracted from an X-ray image including a barium filled region by the following steps. Firstly, the approximated stomach region is obtained by nonrigid registration based on mutual information. We define nonrigid transformation as one that includes translations, rotations, scaling, air-barium interface and weights of eigenvectors determined by principal components analysis in the stomach shape database. Secondly, the accurate stomach contour is extracted from the gradient of an image by using the Dynamic Programming. After then, stomach lesions are detected by inspecting whether the Mahalanobis distance from the mean in the normal appearance database is longer than a suitable value on the extracted stomach contour. We applied our system to 75 X-ray images of barium-filled stomach to show its validity.


Pattern matching between a scanning electron microscopy exposed pattern image of large-scale integrated fine structures and computer-aided design layout data by using the relaxation method

December 2005

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31 Reads

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2 Citations

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

A pattern matching technique between a scanning electron microscopy (SEM) exposed pattern image of large-scale integrated fine structures and computer-aided design (CAD) layout data based on the relaxation method is proposed wherein circular arc components are utilized. Edges are extracted from the SEM image and corners in the CAD layout are rounded. The edges in the SEM and CAD layout images are divided into three components: horizontal and vertical straight-line segments, and circular arcs. These components are expressed by bounding boxes; the optimal combination between the SEM and CAD components is then searched by using the probabilistic relaxation method. The mean vector among the obtained shift vectors shows the matching point. We applied our method to SEM exposed pattern images and compared the results with those of the conventional cross-correlation method. The results showed that our method has good robustness against change in shape of exposed pattern. The computation time of our method was comparable to the cross-correlation method.


Electron-beam direct writing system employing character projection exposure with production dispatching rule

November 2005

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11 Reads

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1 Citation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

An electron-beam direct writing (EBDW) system with a character projection (CP) aperture is a promising candidate as an effective maskless lithography tool to realize a system on a chip fabrication process at low cost with quick turn-around time. We have proposed an approach to enhance the throughput of an EBDW system by using a production dispatching rule. Through an event-driven simulation analysis in the backend of the line, the effect of production dispatching rules on the throughput and the cost in an EBDW system is evaluated. We considered four kinds of dispatching rules, FIFO, APA, LWKR, and SLACK. FIFO is a usually used dispatching rule and gives the highest priority to the waiting lot that came in first at the EB lithography process. In APA, the highest priority is given to the waiting lot that does not require the CP aperture exchange. In LWKR, the highest priority is given to the waiting lot associated with the job having the least amount of total processing time remaining to be done. In SLACK, the highest priority is given to the waiting lot with the shortest slack. Simulated result shows that the EBDW system with APA enhances the throughput more than 1.2 times as compared to that with FIFO, LWKR, or SLACK, and has a throughput of 5 wafers/h or more. Furthermore, compared with the cost per chip for FIFO, the APA rule reduces the cost/chip by more than 30% at the cost minimum lot arrival rate point.


Robustness evaluation of cost-optimum sampling plan for in-line wafer inspection by using Taguchi methods

October 2005

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14 Reads

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2 Citations

The robustness of the cost-optimum sampling plan is evaluated by using the robustness evaluation procedure based on Taguchi methods. The procedure is a four-step approach: (1) design, (2) measurement, (3)SN analysis, and (4) analysis of variance (ANOVA) as to the result with the highest SN ratio. The contribution of each factor and the interaction between various factors of an experiment can be quantitatively determined by using ANOVA. Simulation study shows that the cost optimum combination of sampling plan and threshold gives the maximum robustness against many process fluctuations. When improving the noise factor with high contribution, the profit is increased by about 20%.


Operator headcount optimization through VLSI test process simulator with human factor

June 2004

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22 Reads

We have tried to optimize operator headcounts in the final test process of a one-chip microcomputer using a VLSI test process simulator with human factor to reply to an employment issue of how many new workers should be hired. The assumed final test process of a one-chip micro-computer has nine test flows that consists of fourteen stages at most. We select tasks for change kit exchanges and machine troubles as those required for a learning process. We simulate the work performance of newly hired workers by using the hyperbolic function with three parameters as a functional model of individual learning. According to the work performance value, we divide the learning process into three stages. The learning process for each stage differs according to relationships with expert workers. Our implemented event-driven simulator includes both processing-related and cost-related parameters. Simulations for two years were carried out for about total 2,400 lots/month. Result suggests that the manufacturing manager should hire new workers so that the ratio between newly hired and expert workers is about 1:2.


Three-dimensional eye movement simulator extracting instantaneous eye movement rotation axes, the plane formed by rotation axes, and innervations for eye muscles

November 2003

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86 Reads

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28 Citations

IEICE Transactions on Information and Systems

We have developed a three-dimensional eye movement simulator that simulates eye movement. The simulator allows us to extract the instantaneous eye movement rotation axes from clinical data sequences. It calculates the plane formed by rotation axes and displays it on an eyeball with rotation axes. It also extracts the innervations for eye muscles. The developed simulator is mainly programmed by a CG programming language, OpenGL. First, the simulator was applied to saccadic eye movement data in order to show the so-called Listing's plane on which all hypothetical rotation axes lie. Next, it was applied to clinical data sequences of two patients with benign paroxysmal positional vertigo (BPPV). Instantaneous actual rotation axes and innervations for eye muscle extracted from data sequences have special characteristics. These results are useful for the elucidation of the mechanism of vestibular symptoms, particularly vertigo.


Cost optimum embedded DRAM design by yield analysis

August 2003

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13 Reads

We study on cost optimum embedded DRAM interconnect technologies by using a simple VLSI particle-induced fault simulator modified for the embedded DRAM macro. The fault simulator is applied to an assumed 4-Mbit DRAM macro production process with DRAM interconnect technologies of DRAM 1/2 pitch 115 nm and ASIC 1/2 pitch of from 115 nm to 500 nm (peripheral circuits). The DRAM macro is included in a SoC chip that has area of 1 cm2 and is manufactured on the wafer with size of 8 inches. Result shows that the wider pitch decreases the count of manufactured chips but increases the yield. ASIC 1/2 pitch of 0.4 μm achieved maximum count of good chips per wafer under the assumed conditions. There exists the cost optimum embedded DRAM design.


Automatic LSI package lead inspection system with CCD camera for backside lead specification

April 2003

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5 Reads

An automatic LSI package lead inspection system for backside lead specification is proposed. The proposed system inspects not only lead backside contamination but also the mechanical lead specification such as lead pitch, lead offset and lead overhangs (variations in lead lengths). The total inspection time of a UQFP package with a lead count of 256 is less than the required time of 1 second. Our proposed method is superior to the threshold method used usually, especially for the defect between leads.


Table 3. 
Table 4 Minimum cost per chip for each available memory LSI test system I Name I # oftest I TAT I Cost/chip I 
Evaluation of final test process in 64-Mbit DRAM manufacturing system through simulation analysis
  • Conference Paper
  • Full-text available

January 2003

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392 Reads

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4 Citations

We have evaluated the final test process in a 64-Mbit DRAM manufacturing system through an event-driven simulation analysis concerning the number of chips simultaneously tested by a memory test system. Four test flows for DRAMS and SDRAMs are considered. The overall number of planned production chips during a month is 3 million. The number of chips simultaneously tested is 32, 64, 128, and 256. Simulations for six months were carried out as a function of number of memory test systems by using parameter values extracted from a real final test facility in Japan. From the overall assessments as to the average TAT and the cost per chip, the final test facility should have 14 memory test systems for this production plan where 128 chips are simultaneously tested.

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Maskless lithography using low-energy electron beam: Recent results for proof-of-concept system

November 2002

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10 Reads

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8 Citations

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

In order to realize a system on a chip fabrication at low cost with quick turn-around-time, we have proposed a maskless lithography strategy, a low-energy electron-beam direct writing (LEEBDW) system with a common character projection (CP) aperture. This article presents a status report on our proof-of-concept (POC) system. We have developed a compact EB column consisting of small electrostatic lenses and deflectors. The experimental results for our POC system indicated that the patterns corresponding to 50-nm-node logic devices can be obtained with CP exposure at the incident energy of 5 keV. The technique to reduce the raw process time using a scanning electron microscope function of LEEBDW system is also reported. © 2002 American Vacuum Society.


Citations (21)


... Details of the method of three-dimensional analysis of eye movements are given in Appendix 2. The axis angle of eye velocity around the X-, Y-, and Z-axes was calculated [17,18]. Then, the slowphase eye velocity (SPEV) of the nystagmus was extracted using a fuzzy set-based approach [19,20] and the MSPEV of positional nystagmus was determined [9]. ...

Reference:

Difference in the immediate effect on positional nystagmus for head positions with interval time during Epley maneuver: a randomized trial
Three-dimensional eye movement simulator extracting instantaneous eye movement rotation axes, the plane formed by rotation axes, and innervations for eye muscles
  • Citing Article
  • November 2003

IEICE Transactions on Information and Systems

... In postfabrication process of the semiconductor manufacturing, the probe test is performed on individual die (chip) of wafers to identify defect of dies and classify dies by the level of its quality. Then, the only "good" dies (i.e., conforming chips) are assembled and packaged in the assembly step in back-end production [18,19]. After the test, a robot arm repeatedly picks up a good die in a wafer and places it on a lead frame in a strip until every good die is transferred in the die attach process. ...

Fail pattern classification and analysis system of memory fail bit maps
  • Citing Article
  • January 2001

... On the other side, the charging effects due to the space charge have brought about some interesting phenomena especially for the SEM observation of surface and buried structures of insulating specimens [9][10][11][12][13][14]. Moreover, the negative charging effects of widely used insulating thin films caused by a keV low-energy e-beam are of great practical significance [15][16][17][18][19]. Therefore, it is important to understand the space charge characteristics in order to minimize and even utilize the charging effects. ...

Electron Beam Testing
  • Citing Article
  • December 1989

... In [13], the E1 transition in the 237 Np nucleus was studied ( = 1.9 keV), vacancies in the K-shell of neptunium were created by 57 Co γ-quanta, and = (2.1 ± 0.6) × 10 -4 was obtained. In [14], the M1 transition in the 197 Au = Δ + 2 NEET NEET,0 2 2 NEET,0 e , nucleus ( = 48 eV) was studied, vacancies in the K-shell of gold were created by a beam of electrons with an energy of 100 keV, and the probability = (2.2 ± 1.8) × 10 −4 was obtained. This experiment also revealed that the probability of excitation of a nucleus via inelastic electron scattering is much lower than via NEET. ...

Observation of nuclear excitation by electron transition (NEET) in 197 Au
  • Citing Article
  • February 1984

Zeitschrift für Physik A Hadrons and Nuclei

... These phenomena can be explained by a local field effect (Type II). [28][29][30] Nakamae et al. had reported that the local field effect arises from a non-uniform potential distribution on the sample surface, and affects the electron trajectories of SE. [28][29][30] And the Type II arises from non-zero potential at the neighboring electrode. 28) In order to analyze the image degradation quantitatively, the intensity profile at the central part of the L/S patterns (indicated as an area between two dashed lines in Fig. 8) were fitted by a summation of four Gaussian distributions as shown in Fig. 9. Three Gaussians correspond to the three lines of pattern, and the fourth one corresponds to the background noise. ...

Hemispherical retarding-field energy analyser with a microchannel plate detector and a high extraction field for voltage measurement in the scanning electron microscope
  • Citing Article
  • November 2000

Journal of Physics E Scientific Instruments

... The latter parameters are of great importance since many types of MEMS are capable to receive signals (like antennas) and operate within RF bands [117][118][119][120][121]. Therefore, stroboscopic microscopy at various modulation rates and probing ranges is, within the framework of this logic, a useful tool not only for the sample registration, but also for the sample probing / excitation, selective in activation of the specific functional elements of MEMS. When implementing progressive methods for analyzing and correcting waveform distortion and analyzing the regularity of physical processes (developed since the 1980s [122][123][124][125]), it is possible to reconstruct in details the dynamics of the individual structures (filaments, cantilevers, etc.), moving directly under the beam of the electron microscope which provides registration of their vibrations / oscillations [126]. ...

Analysis of waveform distortion due to the transit time effect in stroboscopic scanning electron microscopy
  • Citing Article
  • January 1999

Measurement Science and Technology

... Furthermore, a limited transmission grid is another cause of noise. Partition noise is the word for it [31]. Moreover, another kind of noise that arises in light-sensitive detectors, like photomultipliers, is called the Dark Current [32]. ...

Signal-to-noise ratio in the stroboscopic scanning electron microscope
  • Citing Article
  • November 2000

Journal of Physics E Scientific Instruments

... As a consequence, this can result in irregular deflection of a primary beam. Numerous studies have been indicated that charging occur at practically all used modesand any real currents of a probe [1][2][3][4]. The electron charging effects in dielectrics caused by electron injection have been investigated intensively with focus on the experimental methods [1, 2,[5][6][7], as well as theoretical ones [3, 4,[9][10][11]. ...

A new method for measuring charging characteristics of an electrically floating target under electron beam irradiation
  • Citing Article
  • November 2000

Journal of Physics E Scientific Instruments

... The contrast due to the deflection of SEs in the electric field on this surface is called 'Voltage type III contrast'. Nakamae et al [18] have reported the voltage measurement accuracy when this type of contrast was used in three types of detectors: a conventional SEM detector system, a retarding field energy analysis system, and a high-resolution energy analysis system. ...

Local field effect on voltage contrast in the scanning electron microscope
  • Citing Article
  • November 2000

... This anisotropy can not be explained by conventional, established EBIE theory which is based on the mechanistic framework shown schematically in Figure 2(a), where the key role of energetic electrons is to dissociate surface-adsorbed precursor molecules. In the case of H 2 O EBIE of diamond, a possible pathway in this framework is the following [4,5]: [5,8,[11][12][13][14][15][16][17][18][19][20][21]. However, the model can not explain the etch rate anisotropy seen in Figure 1, unless different crystal planes give rise to significant variations in the electron dissociation cross-section of H 2 O adsorbates, the secondary electron emission yield, or the local coverage of precursor molecule adsorbates. ...

Measurements of the energy dependence of electron beam assisted etching of, and deposition on, silica
  • Citing Article
  • November 2000