Gregor Lasser’s research while affiliated with Chalmers University of Technology and other places

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Publications (84)


Deliberate Source/Load Mismatch for Linearity and Efficiency of Discrete Supply Modulated GaN PAs
  • Article

December 2024

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8 Reads

IEEE Transactions on Microwave Theory and Techniques

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Paul Flaten

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[...]

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Gregor Lasser

The effect of source (gate-side) and load (drain-side) impedance match on the linearity and efficiency of an envelope-tracked power amplifier (PA) is investigated. Conventionally designed GaN PAs exhibit an increasing gain magnitude and phase with increasing drain supply voltage. When this supply voltage is dynamically modulated in discrete levels for efficiency enhancement, the changing gain distorts the output signal and degrades linearity. The dependency of the PA gain on drain supply voltage can be minimized, however, through proper selection of the source and load impedances. This is illustrated through source/load pull simulations of a 8×1008\times 100 μ\mu m GaN HEMT, which reveal impedances that result in low gain magnitude and phase variation. Three PA design (matching) cases are then chosen and their performances are evaluated with an ideal dynamically changing supply. For the comparison, envelope simulations with a 67.5-MHz 64-QAM signal are performed and show that dynamic supply modulation of the mismatched PA design improves linearity and efficiency over a conventional PA designed for maximum efficiency/gain. The simulation results are validated through measurements of a deliberately mismatched, 6.2–12.6-GHz, 5-W GaN MMIC PA envelope-tracked with a GaN MMIC four-level supply modulator. Compared with a static supply, the dynamic results show improvement in average efficiency and a small penalty in linearity without using DPD.









Gate Pulsing as a Transient Ringing Reduction Method for Multi-Level Supply Modulators

August 2023

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14 Reads

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1 Citation

IEEE Transactions on Power Electronics

This letter demonstrates a gate pulsing technique to reduce the ringing in multilevel dynamic voltage supplies used for modulating the drain bias of GaN radio-frequency power amplifiers (RFPAs). Supply modulation can improve overall average efficiency when the RFPA is amplifying signals with varying envelopes. Multilevel discrete supply modulators (SMs) are used for high instantaneous bandwidth signals when continuous modulators become inefficient. These SMs provide several voltage levels to the RFPA using transistor switches. By pulsing the gate drive of switches on and off quickly before ultimately turning them on , the switches undergo an intermediate lossy state, which reduces the ringing. The pulse settings can be individually adjusted for different voltage level transitions and loads. Gate pulsing is compared to conventional ringing reduction techniques such as varying the fixed series gate resistance, and deadtime optimization. Gate pulsing experimental results with a 4-level SM and 8 MHz 64-QAM signal show a significant improvement in ringing over deadtime optimization with only a 0.9% point drop in efficiency.


(a) Labelled block diagram of an AISC. (b) Photograph of the printed circuit boards showing surface mount reflectionless 3‐dB couplers, the uniform delay line GaN MMIC in Path 1, and fixed delay lines (total delay of 433 ps) and attenuator (1.28 dB) in Path 2. A similar board is fabricated for the tapered delay line MMIC, with a different delay (463 ps) and attenuation (1.35 dB) in Path 2. The size of the board is 8.5 cm by 5 cm. AISC, analogue interference cancelation circuit. MMIC, monolithic microwave integrated circuit.
(a) Circuit schematic of a tunable true‐time artificial transmission‐line delay, consisting of inductors and variable capacitors. (b and c) Photographs of the uniform and tapered delay lines, respectively. Note the different sizes of transistors in (c). The chips are 1.6 mm × 3.0 mm in area.
(a) Circuit schematic of the variable capacitor showing the gate bias and drain control bias circuits. (b) Photograph of a single 12 × 120‐μm device used to extract the capacitance from a one‐port measurement calibrated to the reference plane shown in a dashed line.
A comparison of measured (black line with symbols) and simulated (red dashed lines) tunable capacitor extracted from one‐port measured and simulated data. Both are performed from 1 to 5 GHz, showing little frequency variation in the measured data.
Characteristic impedance of each line segment of the simulated uniform and tapered artificial transmission lines at 3 GHz plotted for control voltages of −20 to +40 V with steps of 10 V.

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Linear broadband interference suppression circuit based on GaN monolithic microwave integrated circuits
  • Article
  • Full-text available

July 2023

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98 Reads

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2 Citations

This paper presents simulation and measurement results of a 2–4 GHz octave bandwidth interference suppression circuit. The circuit accomplishes the function of a tunable frequency notch through an interferometer architecture. The relative delay in the interferometer paths is varied with GaN monolithic microwave integrated circuit tunable delay lines. The delay is adjusted by varying the drain voltage of cold‐FET connected high electron mobility transistors acting as varactors. Two types of periodically‐loaded delay lines are compared: a uniform and a tapered design. A simple theoretical study, relating the delays and amplitudes in the interferometer circuit branches, is developed to inform the design. Two interference suppression hybrid circuits are implemented, and measurements demonstrate a 25–40 dB notch across the 2.24–4 GHz range for the uniform delay line, and 2.32–4.13 GHz for the tapered design. The return loss for both designs remains below 10 dB. Measurements with two tones spaced 0.5 and 1 GHz for varying tone power are performed to quantify suppression. The circuit can handle an input power of 37 dBm and maintains performance with two simultaneous 25 dBm tones spaced 0.5 GHz apart. Linearity is characterised with 10 MHz two‐tone measurements, and the circuit demonstrates a 3rd‐order intercept input power larger than 30 dBm for control biases above −12 V.

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Citations (52)


... Graphene-based RIS [36] is commonly used in the photonics field, which provides a unique proponent to control signals. Finally, diode-based [37,38] can use the propensities of diodes to switch elements on and off, effectively controlling the surface. Following this analysis and comparison, we use diodes as a control mechanism for mm-wave phase control in our RIS. ...

Reference:

A Dumbbell Shape Reconfigurable Intelligent Surface for mm-wave 5G Application
A Varactor-Based Reconfigurable Intelligent Surface Concept for 5G/6G mm-Wave Applications
  • Citing Conference Paper
  • March 2024

... The ocean is a treasury of resources vital to human survival and the second most significant strategic space after land. The progress of intelligent control [1], numerical simulation [2], information fusion [3], data mining [4], parameter optimization [5], virtual reality [6], artificial intelligence [7], high-end chips [8] and large-scale integrated circuits [9] has also brought about remarkable breakthroughs in the technologies of intelligent underwater vehicles. Intelligent underwater vehicles are applicable to operations in harsh environments which divers and equipment have difficulty accessing, such as during deep-sea resource exploration [10], submarine oil and gas pipeline inspection [11], dam exploration [12], aircraft or shipwreck salvage [13], submarine cable maintenance [14] and submarine cable laying [15], etc. ...

Linear broadband interference suppression circuit based on GaN monolithic microwave integrated circuits

... Behavior of the 3rd order intermodulation prducts (IM3) has been analyzed in radiation [16], but the effect of load-pull has been ignored. Beam-steering is usually not performed in simulations which take load-pull into account [17]. ...

Nonlinear and Load-Pulling Effects in an Octave-Bandwidth Transmit Array
  • Citing Article
  • January 2022

IEEE Transactions on Microwave Theory and Techniques

... The implemented tunable notch hybrid circuit does not have any gain and would thus increase the noise figure of the receiver as with any lossy filter. However, since the delay lines are implemented in a MMIC, gain stages can easily be integrated as demonstrated in a GaAs MMIC at X-band in Ref. [37], which improves noise in the figure. This X-band GaAs MMIC is fully integrated with Lange couplers used for the input power divider and output power combiner on chip. ...

GaAs MMIC Interferometer for Broadband Interference Suppression
  • Citing Conference Paper
  • September 2022

... However, the absence of a standardized NPR measurement methodology [11], coupled with insufficient details in existing characterizations, complicates the critical task of comparing linearity performance among DPAs designed for satellite applications. Many studies in the field present NPR results without explicitly specifying all crucial test conditions such as signal statistics, instantaneous bandwidth (IBM) of the test signals, and the waveform characteristics of the baseband signal [8], [12], [13], [14], [15]. This lack of specificity undermines the ability to confidently define and achieve target NPR performance levels, as these results are significantly influenced by the test conditions themselves [16]. ...

A 10-W6-12GHz GaN MMIC Supply Modulated Power Amplifier
  • Citing Conference Paper
  • September 2022

... For frequencies above 1 MHz, diplexer JAWS circuits are used to better match the output impedance to 50 X. 30 Diplexers terminate the low-impedance of a long JJ array, thereby reducing on-chip signal reflections and standing waves when transmitting higher-frequency waveforms from the cryogenic JAWS to a room-temperature device under test (DUT). An integrated superconducting diplexer is implemented at the JJ array output of the Very-High-Frequency-band JAWS (VHF-JAWS), which NIST is developing as a quantum-based source for RF power calibrations. ...

RF Josephson Arbitrary Waveform Synthesizer With Integrated Superconducting Diplexers
  • Citing Article
  • November 2022

IEEE Transactions on Applied Superconductivity

... Instead, we measure the magnitude of the desired waveform and the integrated in-band noise power. 39,40 A consistently missing or extra pulse in the pattern is equivalent to adding a frequency comb to the spectrum of the calculated pattern, with the phase of the comb frequencies determined by the location of the missing or extra pulse in the pattern. The effect on the magnitude of a single-frequency waveform, therefore, depends on the phase of that comb line, but the appearance of comb frequencies in the surrounding bandwidth will increase the total in-band noise power. ...

A Microwave Quantum-Defined Millivolt Source
  • Citing Article
  • November 2021

IEEE Transactions on Microwave Theory and Techniques

... The proposed technique is related to our previous frequency-reconfigurable PA architecture in [21], but uses fixed matching networks instead of switch-reconfigurable networks in order to avoid the insertion losses and complexity associated with switches. The theory discussion in this paper addresses the conditions under which the switch-less approach is possible. ...

A S-C- / K-band Reconfigurable GaAs MMIC Power Amplifier for 5G Applications
  • Citing Conference Paper
  • June 2021

... To evaluate the stability of the proposed LNA, the standard strategy including the Barkhausen criterion and stable factors k and µ should be simulated [32], [53], and [54]. The loop gain simulation is used for the input nodes of the first and second stages [32]. ...

0.01-22-GHz Feedback-Stabilized Single-Supply GaAs Cascode Distributed Amplifiers
  • Citing Article
  • September 2021

IEEE Microwave and Wireless Components Letters

... Due to the large footprint of the ferrite-based non-reciprocal components, miniaturization concepts that eliminate the need for magnetic biasing using: 1) transistors [30], [31], [32], [33], [34], [35], [36]; 2) self-biased materials [37], [38], [39]; or 3) spatiotemporal modulation (STM) [40], [41], [42], [43], [44], [45], [46] are increasingly being explored. Integrated transistor-based designs [33], [34] are among the most popular design approaches. ...

MMIC GaAs X-Band Isolator with Enhanced Power Transmission Response
  • Citing Conference Paper
  • January 2021