E. Leobandung’s research while affiliated with IBM Research - Thomas J. Watson Research Center and other places

... Setting the threshold voltage for FinFETs and GAA FETs. To set the proper threshold voltage for the lowest operation voltage and off-state current at cryogenic temperature, approaches adopted in advanced technologies, including selection of metal work functions, dipole formation and bandgap engineering of channels, are still valid at cryogenic temperature 4,89 (Fig. 2i). Dipoles can be formed either before (dipole-first) or after (dipole-last) high-k dielectric deposition. ...

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Ultra-low-power cryogenic complementary metal oxide semiconductor technology

... Strong p-type MOSFETs based on III-V material is essential for future logic implementation and their integration with state-ofthe-art n-type RF transistors. Combinations of more conventional p-type SiGe channel devices integrated with ntype III-V InGaAs based devices has been proposed [9], [10]. However, material selectivity during processing may limit this type of material integration, which motivates further studies and development of III-V based p-type transistors. ...

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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si

... At such narrow WFIN, the carrier transport is influenced by the quantum confinement as well as the mobility degradation along the transport direction. The p-type devices have reported to have reduced mobility possibly due to these reasons [21]. Although transport along (110)/<110> are preferred for superior hole mobility [22], it still reduces for the p-FinFETs as compared to n-FinFETs at high inversion charge densities with reduced WFIN [23]. ...

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Cryogenic Performance and Modeling of Sub-5nm Fin-Width Bulk FinFETs for Quantum Computing Applications

... However, the NWs are encapsulated heavily with parasitic components [8]. Also, the reduced silicon area reduces the effective drive current (I eff ) at any given fin height [9], [10]. In contrast, the GAA nanosheet (NS) has increased silicon area and can provide increased currents, however, once again, consumes more silicon footprint and loses the subthreshold control [11]. ...

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In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

... However, due to the nature of RPU-based stochastic multiplication, this type of training algorithm is mainly relevant for clocked spiking systems where voltage pulses can align in time for predictable periods of time (i.e. a clock cycle). This is the case because we are using an RPU-based approach which requires pulse co-incidence to update the weights and is a common assumption for RPUcapable memories proposed as synapses, including analog memories [31], [23], [47], [48], [49]. As such, pulse-extender circuits, such as ones described in works such as [37], [50], [51] would be required to interface data from asynchronous AER sensors with our RPU-based SNN learning system Several device-level implementations of stochastic neurons using resistive memories like phase change memories [52], bulk switching PCMO RRAMs [53] and nanomagnets [54] have been proposed. ...

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A temporally and spatially local spike-based backpropagation algorithm to enable training in hardware

... Another advantage of VLS grown NWs is, that they allow for crystal phase tuning [55,56] with the principal growth direction along [111]zincblende (ZB) or [0001] wurtzite (WZ), which is not generally the case in TASE and ART. ...

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Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

... To achieve this, the ideal analog resistive device should exhibit bidirectional, linear, and symmetric conductance updates in response to an open-loop programming pulse scheme (i.e., without the need for verification following each pulse) [4,14]. Promising technologies include redox-based resistive switching memory (ReRAM) [15,16], electro-chemical random access memory (ECRAM) [17], and capacitive weight elements [18]. Addressing the various non-idealities of these technologies [19] requires the co-optimization of technology and designated training algorithms. ...

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All-in-One Analog AI Accelerator: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

... The data shown in Fig. 4 were measured on an FET with a channel width of 100 µm, and gate length of 10 µm at low V DS = 50 mV to keep the oxide field constant along the channel. The performance of an as-fabricated transistor is compared to an annealed transistor using an optimized high pressure deuterium anneal discussed in more detail in [10]. The pulsed method reveals several characteristics not seen with commercial equipment like SMUs with time resolution in the ms range. ...

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Pulse-Train Method to Measure Transient Response of Field-Effect Transistors

... Confined geometry transistors ensure excellent electrostatics, only at the expense of increased R TH very close to the heat source. Furthermore, new high-mobility channels (i.e., SiGe, Ge) [13][14][15][16] and high-K gate dielectrics (i.e., HfO 2 ) [17,18] have been developed to increase on-current at lower voltage and to reduce gate leakage, respectively. Unfortunately, high mobility and high-K materials have lower thermal conductivities (κ), which further increase channel R TH (∼κ − 1 ). ...

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Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

... In this paper, we reported a fabrication and electrical characterization of a GAA In0.53Ga0. Figure 6a-c, respectively, benchmark g m_max vs. minimum dimension, I ON vs. L g and g m_max vs. S, in comparison to those of previously reported non-planar In x Ga 1-x As Fin or NW MOSFETs [5,14,15,[17][18][19][20][21][22][23][24][25]. Q was defined as g m_max /S, which integrates carrier transport property and electrostatic integrity, as proposed is in [26]. ...

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Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts