Chin-Wei Sher’s research while affiliated with Foxconn Electronics and other places

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Publications (36)


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Optimization of dispersion angle in resonant cavity micro-light-emitting diode using multilayer DBR and microlens structures
  • Preprint
  • File available

October 2024

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33 Reads

Tzu-Yi Lee

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Chien-Chi Huang

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Fu-He Hsiao

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[...]

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Hao-Chung Kuo

In this paper, the fabrication and the corresponding performance characteristics of resonant cavity micro-light-emitting diodes (RC-µ-LEDs) are examined, with particular emphasis placed on reducing the light emission angle to enhance their application efficiency. A stepped quantum well structure and a multilayer aperture distributed Bragg reflector (DBR) are used to reduce the light emission angle, and two different approaches are investigated: one is by adding a multilayer DBR structure, and the other is by incorporating a microlens (ML) structure. The experimental results show that both adjusting the DBR cycles and adding microlenses can effectively reduce the dispersion angle of light emission, and thus improving the directionality of light, wavelength stability, and the overall device performance. Such highly directional light sources offer great solutions for optical communications, micro-LEDs, and augmented reality (AR) applications.

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Figure 1. Schematic process flow of 3D core-shell nanorod LED. (a) The epitaxial structure; (b) deposit Si 3 N 4 on the n-GaN as passivation layer; (c) nanoimprint lithography process to produce a nanorod array; (d,e) transfer the pattern by SiO 2 hard mask deposition; (f) deposit SiO 2 and a thicker photoresist (PR) layer; (g) expose the SiO 2 on the sidewalls of the nanorod; (h) selective removal of SiO 2 on the sidewalls of the nanorod; (i) completed device.
Study of High Polarized Nanostructure Light-Emitting Diode

April 2022

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131 Reads

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3 Citations

In this study, we investigated the characteristic difference between the two different configurations of the three-dimensional shell–core nanorod LED. We achieve a degree of polarization of 0.545 for tip-free core–shell nanorod LED and 0.188 for tip core–shell nanorod LED by combining the three-dimensional (3D) structure LED with photonic crystal. The ability of low symmetric modes generated by photonic crystals to enhance degree of polarization has been demonstrated through simulations of photonic crystals. In addition, light confinement in GaN-based nanorod structures is induced by total internal reflection at the GaN/air interface. The combination of 3D core–shell nanorod LED and photonic crystals cannot only produce a light source with a high degree of polarization, but also a narrow divergence angle up to 56°. These 3D LEDs may pave the way for future novel optoelectronic components.



High Stability of Liquid-Typed White Light-Emitting Diode with Zn0.8Cd0.2S White Quantum Dots

April 2021

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52 Reads

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3 Citations

In this study, we demonstrate a new design of white light-emitting diode (WLED) with high stability and luminous efficiency as well as positive aging. Colloidal ternary Zn0.8Cd0.2S (named Zn0.8) white quantum dots (WQDs) were prepared by chemical route and dispersed in xylene, integrating them into an ultraviolet light-emitting diode (UV-LED) to form WQD-white light emitting diode (WQD-WLED). High efficiency, high color quality and excellent reliability of WQD-WLED with neutral white correlated color temperature (CCT) can be obtained. The experimental results indicate that the stability of relative luminous efficiency and color rendering index (CRI) of the WQD-WLED can reach up to 160 and 82%, respectively. Moreover, the WQD-WLED can operate more than 1000 h under 100 mA, and the quantity of WQDs in the glass package can be reduced.


P‐12.2: Inkjet‐printed Quantum‐dots Photopolymers for Full‐color Micro‐LED Displays

February 2021

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39 Reads

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3 Citations

SID Symposium Digest of Technical Papers

Quantum dots (QDs)‐based color‐conversion micro‐LED displays require simple and cost‐effective technology to remove blue excitation light. We demonstrate a simple process to remove the residual blue light from the color conversion layer by using QDs inkjet printing. It is found that the printed QDs films with the thickness of a few μm can effectively remove the blue excitation light as well as working as the color‐conversion layer.


P‐108: Stable Thermal Distribution of Flexible Transparent InGaN/GaN Multiple Quantum Wells Micro‐LED Arrays

August 2020

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27 Reads

SID Symposium Digest of Technical Papers

We study the thermal distribution of a flexible/transparent unpackaged 32×32 micro‐LED array on PET substrate up to a brightness rating of 5,000 nits at room temperature. The temperature variation of single pixel is 3‐4 °C. The average temperatures of the array range from 30°C to 41 °C, showing stable performance.


P‐109: Temperature‐dependent Forward Voltage of AlGaInP‐based Red Micro‐LEDs

August 2020

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16 Reads

SID Symposium Digest of Technical Papers

Temperature‐dependent electrical characteristics and voltages (dVf/dT) of AlGaInP Micro‐LEDs were investigated. The J‐V curves of the Micro‐LEDs indicate the existence of a big resistance. The measured (dVf/dT) was ‐3 mV/K, which is higher than the expected value in Shockley model. This was attributed to a resistance, leading to higher temperature sensitivity.


Micro-light-emitting diodes with quantum dots in display technology

May 2020

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8,765 Reads

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551 Citations

Light Science & Applications

Micro-light-emitting diodes (μ-LEDs) are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications, such as mobile phones, wearable watches, virtual/augmented reality, micro-projectors and ultrahigh-definition TVs. However, as the LED chip size shrinks to below 20 μm, conventional phosphor colour conversion cannot present sufficient luminance and yield to support high-resolution displays due to the low absorption cross-section. The emergence of quantum dot (QD) materials is expected to fill this gap due to their remarkable photoluminescence, narrow bandwidth emission, colour tuneability, high quantum yield and nanoscale size, providing a powerful full-colour solution for μ-LED displays. Here, we comprehensively review the latest progress concerning the implementation of μ-LEDs and QDs in display technology, including μ-LED design and fabrication, large-scale μ-LED transfer and QD full-colour strategy. Outlooks on QD stability, patterning and deposition and challenges of μ-LED displays are also provided. Finally, we discuss the advanced applications of QD-based μ-LED displays, showing the bright future of this technology.


Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display

April 2020

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489 Reads

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266 Citations

Progress in Quantum Electronics

Micro light-emitting diode (micro-LED) display, mainly based on inorganic GaN-based LED, is an emerging technique with high contrast, low power consumption, long lifetime and fast response time compared to liquid crystal display (LCD) and organic light-emitting diode (OLED) display. Therefore, many research institutes and companies have conducted in-depth research on micro-LED in the full-colour display, gradually realizing the commercialization of micro-LED. And the current research results of micro-LED indicate that it can be widely used in display, visible light communication (VLC), biomedicine and other fields. Although micro-LED has broad commercial prospects, it still faces great challenges, such as the effect of size reduction on performance, the realization of high-density integration on a single wafer for independent addressing of full-colour micro-LED display, the improvement of repair technique and yield, et al. This paper reviews the key solutions to the technical difficulties of the full-colour micro-LED display. Specifically, this review analyzes and discusses a variety of advanced full-colour micro-LED display techniques with a focus on three aspects: growth technique, transfer printing technique and colour conversion technique. This review demonstrates the opportunities, progress and challenges of these techniques, aiming to guide the development of full-colour micro-LED display.


Fabrication and morphology of inkjet‐printed perovskite NW arrays. a) The fabrication process of printed perovskite NW arrays. b) Schematics of perovskite NW arrays within the AAO nanopores. c) Cross‐sectional SEM observation of the perovskite NWs within the AAO nanostructure.
Device design and optical properties of perovskite NW arrays. a) Schematics of the through‐plane optical device setup using GaN LED, perovskite NW/AAO, and DBR layer. b) XRD measurement of CH3NH3PbBr3 perovskite NW arrays. c) PL and UV–vis absorption spectra of perovskite NW/AAO samples.
PL characterization of the perovskite NW/AAO device pumped by GaN blue LED. a) Optical images showing the device turned on and off. The length of the scale bars is 5 mm. b) PL spectra of perovskite NW arrays as the LED drive current changes from 10 to 100 mA. c) PL intensity of perovskite NW arrays as a function of drive current. d) PL EQE of the perovskite NW/AAO device as a function of drive current.
Polarization measurement of perovskite NW arrays. a) Schematic of the polarization experimental setup. b) Polarized emission property of perovskite NW arrays. The inset illustrates the polarization measurement when the angle of polarizer located at 60° and 150°.
Giant Optical Anisotropy of Perovskite Nanowire Array Films

February 2020

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232 Reads

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107 Citations

Polarizers play a key role in generating polarized light for display, imaging, and data communication, but adoption often suffers from high optical loss. Recently, due to superior optoelectronic properties, halide perovskites have been widely developed for lighting applications; however, highly polarized emission (polarization degree >0.8) has not yet been realized with perovskites. Herein, by incorporating inkjet printing and an anodic aluminum oxide (AAO) confinement strategy, highly ordered perovskite nanowire (NW) arrays are demonstrated for anisotropic optical applications. The optical device based on perovskite NW arrays reveals a high photoluminescence external quantum efficiency of 21.6% and emits highly polarized light with polarization degree up to 0.84. The highly polarized emission from perovskite NW arrays has potential to considerably reduce the optical loss of polarizers, which may attract great interest in developing polarized light sources for next‐generation optoelectronic applications.


Citations (27)


... Therefore, as shown in Figure 5, all samples' conduction bands in the EBL region tilt obviously. It is well known that the tilted energy band in the barrier layer actually increases the potential barrier height and enhances the blocking effect on carrier transport [25,26]. To be convenient, the energy difference ∆E between the highest point of conduction band in EBL region and the electron quasi-Fermi level is defined as the EBL's effective barrier height for electrons. ...

Reference:

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different in Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
Study of High Polarized Nanostructure Light-Emitting Diode

... The color-conversion efficiency of phosphor can also be improved by structural engineering. The optical path of the excitation light propagating through the medium can be extended by introducing a scatterer [23][24][25] or photonic crystal (PhC) [26][27][28][29][30][31][32][33] structure within the phosphor. As the optical path of the photons extends, the number of excited photons absorbed by the medium increases. ...

Dual Role of Quantum Dots as Color Conversion Layer and Suppression of Input Light for Full-Color Micro-LED Displays
  • Citing Article
  • July 2021

The Journal of Physical Chemistry Letters

... Quantum dots can also be used as color-conversion layers in display technologies. Lin et al. [194] effectively suppressed the blue residual light by inkjet-printing QD inks. Hu et al. [195] fabricated a 6.6-in QLED display with a QD layer printed to eliminate the blue residual emissions. ...

P‐12.2: Inkjet‐printed Quantum‐dots Photopolymers for Full‐color Micro‐LED Displays
  • Citing Article
  • February 2021

SID Symposium Digest of Technical Papers

... PQDs have made significant strides toward commercialization in the LED industry, particularly in display and lighting applications [127]. Companies like Samsung and TCL have explored PQD-enhanced displays, with Samsung's QLED TVs using QD technology that includes PQDs for enhanced color purity and efficiency. ...

Micro-light-emitting diodes with quantum dots in display technology

Light Science & Applications

... MLO involves physically detaching the LED layers, potentially offering faster processing but necessitating careful control to avoid damaging the delicate structures. The transfer stage integrates the lifted micro-LEDs onto flexible substrates using methods like pick-and-place, transfer printing, roll-to-roll, or self-assembly [41][42][43][44]. Pick-and-place offers high precision but can be e-skins (ix), and epidermal micro-LED arrays (x), highlighting the adaptability of this technology. ...

Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display
  • Citing Article
  • April 2020

Progress in Quantum Electronics

... Due to their anisotropic geometry and quantum confinement effects, ultrathin MHP NWs also exhibit unique polarized optical and optoelectronic properties [49,137,138]. When excited with linearly polarized light, NW solutions usually display a polarized PL behavior [131,[139][140][141]. Leveraging this property, Wang et al. fabricated a linearly polarized light detector using ultrathin CsPbBr3 NWs through a brushing-assembled film method (Figure 7c) [49]. ...

Giant Optical Anisotropy of Perovskite Nanowire Array Films

... To enhance the recombination characteristics ofn LEDs, the sidewall damage can be improved through sidewall passivation treatments. For this purpose, the PE-CVD technique is commonly used due to its high deposition rate; however, it generates plasma-induced sidewall damage and, thus, contributes to the leakage current [35], [41]. These challenges can be overcome by using the ALD technique, which can effectively suppress the leakage current caused by sidewall defects through highly precise control of the layer thickness [32], [36]. ...

White Light‐Emitting Diodes: Highly Efficient and Stable White Light‐Emitting Diodes Using Perovskite Quantum Dot Paper (Adv. Sci. 24/2019)

... Perovskite quantum dots (PQDs) have received great attention in recent years as semiconducting material for optoelectronic applications with promising performance in solar cells [1,2], lasers [3,4], photodetectors [5,6], and field-effect transistors [7,8]. The intrinsic physical properties of leadhalide PQDs such as pronounced narrow photoluminescence (PL) with high color purity and low temperature solution processing explain why these materials have become attractive candidates for applications in light-emitting diodes (LEDs) [9,10] and backlighting systems [11,12]. ...

Highly Efficient and Stable White Light‐Emitting Diodes Using Perovskite Quantum Dot Paper

... When solid lipid nanoparticles are used as shell materials for CsPbX3 QDs, the water stability of QDs is significantly improved, which can subsequently prevent the homogenization of components to a certain degree [40]. Semiconductors, such as metal sulfide ZnS, can also be used to encapsulate CsPbX3 nanocrystals, but materials of this kind are often amorphous and cannot completely cover the nanocrystals [41,42]. This could be the result of nanocrystalline hydrophobic, together with the former intense interaction among the Pb and chalcogenide anions. ...

Ultrawide Color Gamut Perovskite and CdSe/ZnS Quantum-Dots-Based White Light-Emitting Diode with High Luminous Efficiency

... Hence, various focused studies were reported on the fabrication of quantum dots from diverse sources and their modification with multi-component systems to enhance the stability properties, elimination efficiency and minimization of toxicity in water remediation [14][15][16][17][18][19]. ...

A Critical Review on Two-Dimensional Quantum Dots (2D QDs): From Synthesis Toward Applications in Energy and Optoelectronics
  • Citing Article
  • July 2019

Progress in Quantum Electronics