April 2020
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18 Reads
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Publications (3)
December 2019
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226 Reads
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20 Citations
March 2018
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72 Reads
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11 Citations
Citations (2)
... Cost-effective CMOS technology with high transistor density is suitable for beamforming applications of mobile devices. FinFETs have a better maximum oscillation frequency (fMAX) than the planar MOSFET [4,5]. However, the cut-off frequency (fT) of FinFET cannot outperform planar MOSFET [4,6] due to the low electron mobility of its (110) sidewalls. ...
- Citing Conference Paper
- Full-text available
December 2019
... Although nowadays some manufacturers (e.g. Intel [6], [7]) use significantly reduced channel doping to suppress RD induced fluctuations of device parameters, some other leading companies (such as IBM [8] and TSMC [9]) still employ FinFETs with "conventional" channel doping and therefore RD related variability still remains an issue. ...
- Citing Conference Paper
March 2018