B. Bigwood’s scientific contributions

... In response to market demands, the transistor dimensions have been scaled down proportionally according to Moore's Law. As an alternative to planar metal-oxide-semiconductor field-effect transistors (MOSFETs), fin field-effect transistors (FinFETs), which utilize a three-dimensional architecture with the gate wrapping around vertical fins on top and sides, have been developed and commercialized in 22 nm CMOS technology [1][2][3]. During the past decades, FinFET technology has been successfully applied to 5 nm and even 3 nm technology nodes through higher aspect ratio and layout optimization [4][5][6][7][8]. ...

Reference:

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network